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公开(公告)号：KR1020130125612A
公开(公告)日：2013-11-19
申请号：KR1020120049269
申请日：2012-05-09
IPC: H01L27/115 , H01L21/8247
CPC classification number: G11C11/21 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2213/15 , G11C2213/31 , G11C2213/32 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/145
Abstract: A hybrid resistive memory device, an operating method and a manufacturing thereof are disclosed. The hybrid resistive memory device includes at least two resistive memory part. At least one among the resistive memory parts has a long-term plasticity property. Therefore, the hybrid resistive memory device obtains a short-term plasticity property and the long-term plasticity property.
Abstract translation: 公开了一种混合电阻式存储器件，其操作方法和制造方法。 混合电阻性存储器件包括至少两个电阻存储器部分。 电阻式存储器部件中的至少一个具有长期可塑性。 因此，混合电阻式存储器件获得短期可塑性和长期可塑性。
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公开(公告)号：KR1020130079891A
公开(公告)日：2013-07-11
申请号：KR1020120000647
申请日：2012-01-03
Applicant: 삼성전자주식회사
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/42384 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: PURPOSE: A high voltage oxide transistor and a manufacturing method thereof are provided to reduce manufacturing costs and to simplify manufacturing processes by directly forming the high voltage oxide transistor on a copper substrate. CONSTITUTION: A channel layer (36) is formed on a substrate (30). A gate electrode (32) corresponding to the channel layer is formed on the substrate. A source (38) is formed in contact with one side of the channel layer. A drain (40) is formed in contact with the other side of the channel layer. The channel layer includes a plurality of oxide layers (36a,36b) without silicon.
Abstract translation: 目的：提供一种高电压氧化物晶体管及其制造方法，以通过在铜基板上直接形成高电压氧化物晶体管来降低制造成本并简化制造工艺。 构成：在衬底（30）上形成通道层（36）。 在衬底上形成对应于沟道层的栅电极（32）。 源极（38）形成为与沟道层的一侧接触。 漏极（40）形成为与沟道层的另一侧接触。 沟道层包括多个没有硅的氧化物层（36a，36b）。
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公开(公告)号：KR1020130066288A
公开(公告)日：2013-06-20
申请号：KR1020110133053
申请日：2011-12-12
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L45/08 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/165 , H01L45/1675 , H01L45/04 , G11C13/0004
Abstract: PURPOSE: A resistive memory device and a manufacturing method thereof are provided to decrease a reset voltage of the resistive memory device, by including a predetermined impurity in a metal oxide layer of a storage node. CONSTITUTION: A resistive memory device includes a switching device and a storage node connected to the switching device. The storage node includes a first electrode(50), a buffer layer(52), a metal oxide layer and a second electrode(58) which are stacked in sequence. The metal oxide layer includes a semiconductor material factor influencing on resistance of the storage node. The metal oxide layer includes a base layer and an oxygen exchange layer which are stacked in sequence.
Abstract translation: 目的：提供电阻式存储器件及其制造方法，通过在存储节点的金属氧化物层中包含预定杂质来降低电阻式存储器件的复位电压。 构成：电阻式存储器件包括连接到开关器件的开关器件和存储节点。 存储节点包括顺序堆叠的第一电极（50），缓冲层（52），金属氧化物层和第二电极（58）。 金属氧化物层包括影响存储节点的电阻的半导体材料因素。 金属氧化物层包括依次层叠的基底层和氧交换层。
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公开(公告)号：KR1020130023641A
公开(公告)日：2013-03-08
申请号：KR1020110086562
申请日：2011-08-29
Applicant: 삼성전자주식회사
CPC classification number: G06F3/042 , G06F3/0386 , H01L27/14679 , G06F3/0412 , G06F3/0421
Abstract: PURPOSE: A light touch screen device capable of supporting remote sensing and touch sensing is provided to use an oxide semiconductor transistor of which the photosensitive property is excellent as a light sensing device, thereby easily manufacturing a large size light touch screen device. CONSTITUTION: Sensing pixels are arranged in rows and columns. The sensing pixels include a light sensing pixel(210p) and a touch sensing pixel(210t). The light sensing pixel senses the light of an external light source. The touch sensing pixel senses reflected display light when a screen is touched. The light sensing pixel includes a first light sensor transistor(112) and a first switch transistor(111), which are serially connected. The touch sensing pixel includes a second light sensor transistor and a second switch transistor, which are serially connected. The light sensing pixel and the touch sensing pixel are alternately arranged in a row.
Abstract translation: 目的：提供一种能够支持遥感和触摸感测的轻触摸屏设备，以使用感光性能优异的氧化物半导体晶体管作为光感测装置，从而容易地制造大尺寸的轻触摸屏装置。 构成：传感像素以行和列排列。 感测像素包括感光像素（210p）和触摸感测像素（210t）。 光感测像素感测外部光源的光。 当触摸屏幕时，触摸感测像素感测反射的显示光。 感光像素包括串联连接的第一光传感器晶体管（112）和第一开关晶体管（111）。 触摸感测像素包括串联连接的第二光传感器晶体管和第二开关晶体管。 光感测像素和触摸感测像素交替排列成一行。
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公开(公告)号：KR1020130014200A
公开(公告)日：2013-02-07
申请号：KR1020110076166
申请日：2011-07-29
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L29/66621 , H01L29/66545 , H01L29/66969 , H01L29/685 , H01L29/78618 , H01L29/7869 , H01L29/78696 , G11C13/0007 , H01L29/221 , H01L29/66742 , H01L29/786 , H01L45/04
Abstract: PURPOSE: A semiconductor device and a manufacturing method thereof are provided to implement high driving speed by arranging a resistance variable material between a source and a drain. CONSTITUTION: A channel layer(105) is arranged on an insulating substrate(101). A gate is extended from the upper surface of the channel layer to the inner part of the channel layer. A source and a drain are arranged at both sides of the gate on the channel layer. A gate insulating layer(104) surrounds the gate and electrically insulates the gate from the channel layer, the source and the drain. A resistance variable material layer(102) is arranged between the insulating substrate and the gate.
Abstract translation: 目的：提供半导体器件及其制造方法以通过在源极和漏极之间布置电阻可变材料来实现高驱动速度。 构成：在绝缘基板（101）上设置通道层（105）。 栅极从沟道层的上表面延伸到沟道层的内部。 源极和漏极布置在沟道层上的栅极的两侧。 栅极绝缘层（104）围绕栅极并且使栅极与沟道层，源极和漏极电绝缘。 电阻可变材料层（102）设置在绝缘基板和栅极之间。
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Patent Agency Ranking
公开(公告)号：KR101206033B1
公开(公告)日：2012-11-28
申请号：KR1020060035076
申请日：2006-04-18
Applicant: 삼성전자주식회사
IPC: H01L21/20 , H01L29/786
CPC classification number: H01L29/7869 , H01L21/02381 , H01L21/02422 , H01L21/02554 , H01L21/02631 , H01L29/45 , H01L29/78618
Abstract: ZnO 반도체 박막 및 이를 응용하는 박막 트랜지스터 및 제조에 관한 것이다.
ZnO 반도체 박막 제조방법은: 산소 분위기에서 기판에 ZnO 박막을 형성하는 단계; ZnO 박막 위에 산소 친화적 금속에 의한 산소 확산층을 형성하는 단계; 그리고 상기 ZnO 박막 및 산소 확산층을 열처리하여 ZnO 박막에 포함된 산소를 산소 확산층으로 확산시키는 단계;를 포함한다.
ZnO, TFT, 산소 농도 조절, 확산-
公开(公告)号：KR1020120120707A
公开(公告)日：2012-11-02
申请号：KR1020110038442
申请日：2011-04-25
Applicant: 삼성전자주식회사
IPC: H01L27/14
CPC classification number: H01L27/14632 , H01L27/1446 , H01L27/14603 , H01L27/14623
Abstract: PURPOSE: An optical sensing device and a driving method thereof are provided to improve the operation reliability of the optical sensing device by simply preventing a shift phenomenon of a threshold voltage generated in an oxide semiconductor transistor. CONSTITUTION: A switch transistor(130) and an optical sensor transistor(140) are formed on a substrate(101). The switch transistor and the optical sensor transistor have one common source and drain electrode(109). A first gate electrode(102) and a second gate electrode(103) are partially formed on the substrate. A gate insulation layer(104) is formed on the substrate, the first gate electrode, and the second gate electrode. A first source and drain electrode(108) and a second source and drain electrode(109) are formed on both sides of a first channel layer(106) and a second channel layer(107).
Abstract translation: 目的：提供一种光学感测装置及其驱动方法，通过简单地防止在氧化物半导体晶体管中产生的阈值电压的偏移现象来提高光学传感装置的操作可靠性。 构成：在基板（101）上形成开关晶体管（130）和光学传感器晶体管（140）。 开关晶体管和光学传感器晶体管具有一个公共源极和漏极（109）。 第一栅电极（102）和第二栅电极（103）部分地形成在基板上。 在基板，第一栅电极和第二栅电极上形成栅极绝缘层（104）。 在第一沟道层（106）和第二沟道层（107）的两侧形成有第一源极和漏极（108）和第二源极和漏极（109）。
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公开(公告)号：KR1020120095151A
公开(公告)日：2012-08-28
申请号：KR1020110014649
申请日：2011-02-18
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H01L31/115 , G01T1/24
CPC classification number: H01L27/14659 , H01L27/14632 , H01L27/14676 , G01T1/24 , H01L31/115
Abstract: PURPOSE: An X-ray detector including a diffusion preventing layer is provided to prevent the deterioration of a photo conductor by preventing a contact between a pixel electrode and the photo conductor. CONSTITUTION: A transistor and a signal storage capacitor are serially arranged on a substrate. An insulation layer covers the transistor and the capacitor on the substrate. A pixel electrode(111) is connected to a top electrode of the capacitor on the insulation layer. A first diffusion preventing layer(112) covers the pixel electrode on the insulation layer. A photoconductor(110) is formed on the first diffusion preventing layer. A common electrode is formed on the photo conductor. A signal processing unit(150) is connected to a drain electrode of the transistor.
Abstract translation: 目的：提供包括防扩散层的X射线检测器，通过防止像素电极和光导体之间的接触来防止光导体的劣化。 构成：晶体管和信号存储电容串联设置在基板上。 绝缘层覆盖晶体管和基板上的电容器。 像素电极（111）连接到绝缘层上的电容器的顶部电极。 第一扩散防止层（112）覆盖绝缘层上的像素电极。 在第一扩散防止层上形成光电导体（110）。 在光导体上形成公共电极。 信号处理单元（150）连接到晶体管的漏电极。
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公开(公告)号：KR1020120073086A
公开(公告)日：2012-07-04
申请号：KR1020110110720
申请日：2011-10-27
Applicant: 삼성전자주식회사
CPC classification number: G11C13/0038 , G11C13/004 , G11C2207/2227
Abstract: PURPOSE: A variable resistance device, a semiconductor device including the same, and a method for operating the semiconductor device are provided to enhance the reliability of the semiconductor device by improving a current distribution of the variable resistance device. CONSTITUTION: A set voltage is applied to a variable resistance device(110). A reset voltage is applied to the variable resistance device(120). A reset current flowing in the variable resistance device with the applied reset voltage is sensed(130). It is determined whether the sensed reset current is within a first current range(140). If the sensed reset current is not within the first current range, the reset voltage is applied to the variable resistance device.
Abstract translation: 目的：提供一种可变电阻器件，包括该可变电阻器件的半导体器件和用于操作半导体器件的方法，以通过改善可变电阻器件的电流分布来提高半导体器件的可靠性。 构成：设定电压施加到可变电阻装置（110）。 复位电压被施加到可变电阻装置（120）。 感测在施加的复位电压下在可变电阻装置中流动的复位电流（130）。 确定检测到的复位电流是否在第一电流范围内（140）。 如果检测到的复位电流不在第一电流范围内，则复位电压被施加到可变电阻器件。
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公开(公告)号：KR1020120060602A
公开(公告)日：2012-06-12
申请号：KR1020100122192
申请日：2010-12-02
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
Abstract: PURPOSE: A designing method of transparent conductive material is provided to provide transparent conductive material using for a transparent electrode of an electronic device. CONSTITUTION: A designing method of transparent conductive material comprises: a step of determining A_aB_bO_c, which has the conduction band gap of 1-5 eV, has plasma frequency of conduction electron which is lower than the minimum energy of visible light area, and has optical band gap energy higher than the maximum energy of visible light region, by calculation of energy band; and a step of determining A_aB_(b-x)C_xO_c of which optical band gap energy and conduction band gap is within the range of 80-100% from the optical band gap energy of the A_aB_bO_c, and the 70-100% from the conduction band gap, respectively, and of which Fermi energy is within the conduction band.
Abstract translation: 目的：提供透明导电材料的设计方法，以提供用于电子设备的透明电极的透明导电材料。 构成：透明导电材料的设计方法包括：确定具有1-5eV的导带的A_aB_bO_c的步骤具有低于可见光面积的最小能量的导电电子的等离子体频率，并且具有光学 通过计算能带，带隙能量高于可见光区域的最大能量; 以及确定A_aB_（bx）C_xO_c的步骤，其中光学带隙能量和导带距离A_aB_bO_c的光学带隙能量在80-100％的范围内，并且从导带的70-100％ ，其中费米能量在导带内。
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