公开(公告)号：ITTO20010519A1

公开(公告)日：2002-12-02

申请号：ITTO20010519

申请日：2001-05-31

Applicant: ST MICROELECTRONICS SRL

Inventor： SASSOLINI SIMONE ,  VIGNA BENEDETTO

IPC: G11B5/55 ,  G11B5/60

Abstract: In an actuator device for hard disks a suspension element carries a slider that is subject to undesired vibrations which give rise to rotations of the slider with respect to a nominal position. An electrostatically controlled position-control structure is arranged between the suspension and the slider and is controlled in an active way so as to generate torsions of the platform that counter the undesired rotations. The position-control structure comprises a platform of conductive material and control electrodes arranged underneath the platform. The platform is connected to a load-bearing structure by spring elements that enable movements of roll and pitch. Four control electrodes are arranged according to the quadrants of a square and can be selectively biased for generating electrical forces acting on the platform.

公开(公告)号：DE69702745T2

公开(公告)日：2000-12-07

申请号：DE69702745

申请日：1997-03-04

Applicant: ST MICROELECTRONICS SRL

Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MONTANINI PIETRO ,  FERRERA MARCO

IPC: G01L9/08 ,  G01L9/00 ,  H01L29/84

Abstract: The method described provides for the formation of a region of silicon dioxide on a substrate (11) of monocrystalline silicon, the epitaxial growth of a silicon layer, the opening of holes (14') in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes (14') until a silicon diaphragm (12'), attached to the substrate (11) along the edges and separated therefrom by a space (15), is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes (14') to have diameters smaller than the thickness of the diaphragm (12') and to be closed by the formation of a silicon dioxide layer (16) by vapour-phase deposition at atmospheric pressure.

公开(公告)号：DE69702745D1

公开(公告)日：2000-09-14

申请号：DE69702745

申请日：1997-03-04

Applicant: ST MICROELECTRONICS SRL

Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MONTANINI PIETRO ,  FERRERA MARCO

IPC: G01L9/08 ,  G01L9/00 ,  H01L29/84

Abstract: The method described provides for the formation of a region of silicon dioxide on a substrate (11) of monocrystalline silicon, the epitaxial growth of a silicon layer, the opening of holes (14') in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes (14') until a silicon diaphragm (12'), attached to the substrate (11) along the edges and separated therefrom by a space (15), is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes (14') to have diameters smaller than the thickness of the diaphragm (12') and to be closed by the formation of a silicon dioxide layer (16) by vapour-phase deposition at atmospheric pressure.