公开(公告)号：JPH11183518A

公开(公告)日：1999-07-09

申请号：JP21582598

申请日：1998-07-30

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  MONTANINI PIETRO ,  FERRERA MARCO

IPC: G01P9/04 ,  B81B3/00 ,  G01C19/56 ,  G01P15/08 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L41/08

Abstract: PROBLEM TO BE SOLVED: To enhance the sensitivity of a sensor furthermore by providing a weighted region containing tungsten in a movable mass. SOLUTION: A sacrifice region whose both sides and lower side are surrounded by a buried conductive region 3 is etched and removed, and an air gap 38 is formed in a semiconductor substrate 1. In its bottom part, a movable mass 40 is separated from the other parts of the substrate 1, and supported only by a fixed zone 42. This movable mass 40 is H-shaped, and a cross wall partitioning a movable electrode is inserted like a comb into the cross wall of a stationary mass 41 partitioning a stationary electrode. Since the movable and stationary electrodes are polarized through a contact region and buried conductive regions, the change of the distance between the movable electrode and the stationary electrode to be produced when the movable mass 40 is accelerated, is detected as a capacity change. Since tungsten is deposited on the movable mass 40 in a manufacturing stage to a thickness of about 1 μm for example, to form a tungsten weighted region 26C, the sensitivity of detection of the sensor increases furthermore.

公开(公告)号：JP2000233400A

公开(公告)日：2000-08-29

申请号：JP2000031704

申请日：2000-02-09

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  MONTANINI PIETRO ,  LORA CASTOLDI ,  MARCO FERUREA

IPC: B81B3/00 ,  G01P15/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an microminiature integrated structural body capable of removing or reducing residual stress considerably. SOLUTION: A sacrifice region 21 is formed on a substrate 20 of a semiconductor material, an epitaxial layer 25 grows, then a stress release groove 31 is formed by surrounding a region 33 of the epitaxial layer 25 in which an electromechanical microminiature integrated structural body is formed, and then a wafer 28 is heat-treated to release residual stress. In succession, a seal region of a dielectric material is filled in the stress release groove 31 to form an integrated microminiature constituting element. Finally, a groove defining the ultra-micro structural body is formed on an inner side of a region surrounded by the seal region, then the sacrifice region is removed, and the microminiature integrated structual body without residual stress is formed.

公开(公告)号：JPH11102893A

公开(公告)日：1999-04-13

申请号：JP21667698

申请日：1998-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： MURARI BRUNO ,  FERRARI PAOLO ,  VIGNA BENEDETTO

IPC: H01L21/306 ,  B81B3/00 ,  B81C1/00 ,  G01L1/18 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  H01L21/3063 ,  H01L21/764 ,  H01L29/84

Abstract: PROBLEM TO BE SOLVED: To reduce the cost of manufacturing without the possibility of breaking an erected structure by a method, wherein a sacrificial region of porous material is formed in the main body of single-crystal semiconductor material, and the sacrificial region is removed through the aperture of the main body. SOLUTION: A part of a substrate 2 on the lower part of the aperture of a mask is converted into porous silicon from single-crystal silicon when anodic oxidation treatment is performed, and a porous sacrificial region is formed. subsequently, the mask is removed, and a P-type epitaxial layer 7 is formed on a wafer. The epitaxial layer 7 is plasma etched using a carbide mask 25 having the aperture which is slightly larger than the resist mask, and a groove 27 extending to the porous sacrificial region from the surface of the epitaxial layer 7 is formed. At this time, etching is on the porous sacrificial region stopped automatically. The silicon porous sacrificial region is oxidized through the groove 27, and the first oxidative sacrificial region 28 is formed. Lastly, the oxidative sacrificial region 28 is removed in hydrofluoric acid, and after the mask 25 has been removed, a erected structure 30 is obtained on a gap 31 and is separated by groove 32.

公开(公告)号：JP2000024964A

公开(公告)日：2000-01-25

申请号：JP30722498

申请日：1998-10-28

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO

IPC: B62D57/00 ,  B81B5/00 ,  B81C3/00 ,  H02N1/00 ,  B25J7/00 ,  B25J19/00

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor material integrated micro-actuator as well as to provide electrostatic force having sufficient rigidity in the vertical direction to a disk and having sufficient acceleration to a head in a microactuator. SOLUTION: This micro-actuator has an inside rotor 4 and an outside stator 3 having the circular extension part for accompanying a radial directional arm for supporting electrodes sandwiching each other by extending in the almost circumferential direction. For manufacture, first of all, a sacrificial area is formed on a base board, an epitaxial layer is grown in the next place, an electronic part and a bias conductive area are formed, a part of a lower side base board of the sacrificial area is removed thereafter, an aperture extending through the whole base board is formed, and the epitaxial layer is drilled to constitute the inside rotor 4 and the outside stator 3. These are mutually separated, the sacrificial area is finally removed, and a movable structure is released from the residual part of a chip.

公开(公告)号：JPH11150278A

公开(公告)日：1999-06-02

申请号：JP19549898

申请日：1998-07-10

Applicant: ST MICROELECTRONICS SRL

Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  FERRERA MARCO ,  MONTANINI PIETRO

IPC: B81B3/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84 ,  G01P9/04

Abstract: PROBLEM TO BE SOLVED: To provide a high-sensitivity integrated sensor which is manufactured by the surface micromachining technique, and a manufacture thereof. SOLUTION: This manufacturing method comprises the steps of forming a silicon oxide sacrificial layer 21, polycrystalline Si layer 24, W layer 26 and Si carbide layer 28 on a single-crystal S main body 1, selectively removing the Si carbide layer 28, W layer 26 and Si layer 24 to form an outline of a suspension structure 40, forming Si carbide spacers 30' covering the exposed ends of the W layer 26, and removing the sacrificial layer 21.

公开(公告)号：JPH1183418A

公开(公告)日：1999-03-26

申请号：JP14780098

申请日：1998-05-28

Applicant: ST MICROELECTRONICS SRL

Inventor： SAX HERBERT ,  MURARI BRUNO ,  VILLA FLAVIO ,  VIGNA BENEDETTO ,  FERRARI PAOLO

IPC: G01B7/00 ,  B60R16/02 ,  G01D5/14 ,  G01V3/08 ,  H01H36/00

Abstract: PROBLEM TO BE SOLVED: To provide a two dimensional sensor particularly for car, which comprises a permanent magnet moving while facing plural sensor elements to detect a magnetic field. SOLUTION: A permanent magnet 3 is freely movable on a plane along the first and second directions, which do not coincide with each other, and is fixed to a control lever so as to freely rotate around the third direction perpendicular to the plane as the center. The permanent magnet 3 is freely movable relative to an accumulation device 2 composed of the first group partitioned along the first direction, the second group partitioned along the second direction and a sensor element 10 of the third group to detect an angle position of the permanent magnet 3. An electronic equipment integrated with the sensor unit 10 produces a code relative to a position movement of the permanent magnet 3, and generates a control signal corresponding to a required function.

公开(公告)号：JPH1173613A

公开(公告)日：1999-03-16

申请号：JP19083098

申请日：1998-07-06

Applicant: ST MICROELECTRONICS SRL

Inventor： MURARI BRUNO ,  VIGNA BENEDETTO ,  FERRARI PAOLO

IPC: G11B5/31 ,  G11B5/39

Abstract: PROBLEM TO BE SOLVED: To provide an electromagnetic head formed by using a magnetoresistance element having a relatively simple structure in which a magnetic flux change is sufficiently interlinked with the magnetoresistance element and having high sensitivity. SOLUTION: This electromagnetic head has a magnetic core 205 constituting a magnetic circuit shielded by a first gap 230 for magnetical coupling to the memory cell of a memory device and a second gap 235 for separating the first and second magnetic poles 240, 245 of the magnetic core 205 and a magnetoresistance means 250 arranged in the region of the second gap 235 for the purpose of reading the memory cell. The magnetic reluctance means 250 is connected to the magnetic core 205 corresponding to the first magnetic pole 240 and the second magnetic pole 245 so as to be connected into the magnetic circuit.

公开(公告)号：JP2001009799A

公开(公告)日：2001-01-16

申请号：JP2000123335

申请日：2000-03-22

Applicant: ST MICROELECTRONICS SRL

Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO

IPC: B81C1/00 ,  B81B3/00 ,  G11B5/55 ,  G11B5/596 ,  G11B21/10 ,  G11B21/21 ,  H02N1/00

Abstract: PROBLEM TO BE SOLVED: To increase a practical bias voltage value. SOLUTION: This method is to manufacture a fine integrated structure, generally a micro actuator for a hard disc drive unit and includes steps to form inside connecting regions 32a, 32b in a substrate 31 of a semiconductor material, to form a monocrystal epitaxial region 33, to form downward biting regions 35a, 35b to directly make contact with an inside connecting region in the monocrystal epitaxial region 33, to form an insulating material region 41 in a constitutional part of the monocrystal epitaxial region 33 and to form upward biting regions 46, 47 to directly make contact with the downward biting regions in a poly-crystalline part by growing a pseudo epitaxial region formed of a poly-crystalline part 45' above the constitutional part of the monocrystal epitaxial region 33 and a monocrystal part 45" at the other place. Consequently, PN connection does not exist in the inside of the poly-crystalline part 45' of the pseudo epitaxial region, and the structure has high breakdown voltage.

公开(公告)号：JPH11325916A

公开(公告)日：1999-11-26

申请号：JP30241798

申请日：1998-10-23

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  FORONI MARIO ,  FERRERA MARCO ,  MONTANINI PIETRO

IPC: G01C19/56 ,  G01C19/574 ,  G01C19/5769 ,  G01P15/08 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84 ,  G01P9/04

Abstract: PROBLEM TO BE SOLVED: To realize a vibration type integrated angular velocity sensor having high level performance and reliability at a low cost and its manufacturing method. SOLUTION: This angular velocity sensor device comprises a pair of mobile masses 2a, 2b which are formed in the epitaxial layer and are anchored to one another and to remainder of the device by anchorage elements. The mobile masses 2a, 2b are symmetrical with one another, and have mobile excitation electrodes 6a which are intercalated with respective fixed excitation electrodes 7a1 , 7a2 and mobile detection electrodes 6b which are intercalated with fixed detection electrodes 7b1 , 7b2 . The mobile and fixed excitation electrodes extend in a first direction, and the mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

公开(公告)号：JPH11204730A

公开(公告)日：1999-07-30

申请号：JP30102998

申请日：1998-10-22

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  MANFREDI ARMANDO ,  VIGNA BENEDETTO

IPC: H01L21/822 ,  H01L21/02 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/06

Abstract: PROBLEM TO BE SOLVED: To provide an integrated inductor with high selectivity Q, and a method for manufacturing this. SOLUTION: An integrated inductor 40 is constituted of a coil 21b formed in a second metallic level 21. The coil 21b is supported by a bracket 20a isolated from a semiconductor material substrate 3 by an area gap 28 obtained by removing a sacrifice area formed in a first metal level 16, and extended at the upper part of the semiconductor material substrate 3. The bracket 20a is carried through a supporting area 20b, and the supporting area 20b is arranged in the periphery of the bracket 20a, and they are mutually isolated by an opening 36 connected with the air gap 28. A thick oxide area 4 is extended at the upper part of the semiconductor material substrate 3 and at the lower part of the air gap 28, so that electrostatic connection between the inductor and the semiconductor material substrate 3 can be reduced. Therefore, the inductor with high selectivity can be manufactured by a process having interchangeability with an existing minimum electronic technique process.