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    MEMS ANTI-PHASE VIBRATORY GYROSCOPE
    105.
    发明申请
    MEMS ANTI-PHASE VIBRATORY GYROSCOPE 有权
    MEMS抗相振动陀螺仪

    公开(公告)号：US20160238390A1

    公开(公告)日：2016-08-18

    申请号：US14270596

    申请日：2014-05-06

    Applicant: Chinese Academy of Sciences Institute of Geology and Geophysics

    Inventor： Lian Zhong Yu ,  Chen Sun

    IPC: G01C19/5747 ,  G01C19/5769

    CPC classification number: G01C19/5769 ,  B81B3/0048 ,  B81B2201/0242 ,  B81B2203/0118 ,  B81B2203/0136 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0159 ,  B81C2201/0176 ,  B81C2203/0118 ,  G01C19/574 ,  G01C19/5747

    Abstract: A MEMS anti-phase vibratory gyroscope includes two measurement masses with a top cap and a bottom cap each coupled with a respective measurement mass. The measurement masses are oppositely coupled with each other in the vertical direction. Each measurement mass includes an outer frame, an inner frame located within the outer frame, and a mass located within the inner frame. The two measurement masses are coupled with each other through the outer frame. The inner frame is coupled with the outer frame by a plurality of first elastic beams. The mass is coupled with the inner frame by a plurality of second elastic beams. A comb coupling structure is provided along opposite sides of the outer frame and the inner frame. The two masses vibrate toward the opposite direction, and the comb coupling structure measures the angular velocity of rotation.

    Abstract translation: MEMS反相振动陀螺仪包括两个测量质量，其具有顶盖和底盖，每个与相应的测量质量耦合。 测量质量在垂直方向上相互耦合。 每个测量质量包括外框架，位于外框架内的内框架和位于内框架内的质量。 两个测量质量通过外框架相互耦合。 内框架通过多个第一弹性梁与外框架联接。 质量通过多个第二弹性梁与内框架联接。 梳齿联接结构沿着外框架和内框架的相对侧设置。 两个质量体向相反方向振动，梳齿联结结构测量旋转角速度。

    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL
    106.
    发明申请
    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL 有权
    在电介质和有机材料之间实现良好粘合的方法

    公开(公告)号：US20160221823A1

    公开(公告)日：2016-08-04

    申请号：US15024942

    申请日：2014-09-15

    Applicant: CAVENDISH KINETICS, INC

    Inventor： Mickael RENAULT

    IPC: B81C1/00

    CPC classification number: B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

    Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

    Abstract translation: 本发明一般涉及用于形成MEMS器件的方法和通过该方法形成的MEMS器件。 当形成MEMS器件时，牺牲材料沉积在腔体内的开关元件周围。 牺牲材料最终被去除以释放空腔中的开关元件。 开关元件在其上具有薄的电介质层，以防止蚀刻剂与开关元件的导电材料的相互作用。 在制造期间，介电层沉积在牺牲材料上。 为了确保电介质层和牺牲材料之间的良好粘合性，在沉积其上的电介质层之前，将富硅氧化硅层沉积到牺牲材料上。

    Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed and methods for fabricating same
    109.
    发明授权
    Microelectromechanical device including an encapsulation layer of which a portion is removed to expose a substantially planar surface having a portion that is disposed outside and above a chamber and including a field region on which integrated circuits are formed and methods for fabricating same 有权
    微机电装置包括一个封装层，一个部分被去除以暴露一个基本上平坦的表面，该表面具有设置在室外的部分并且包括形成有集成电路的场区域和用于制造其的方法

    公开(公告)号：US07859067B2

    公开(公告)日：2010-12-28

    申请号：US11901826

    申请日：2007-09-18

    Applicant: Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    IPC: H01L21/00

    CPC classification number: B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

    Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

    NON-VOLATILE MEMORY DEVICE
    110.
    发明申请
    NON-VOLATILE MEMORY DEVICE 审中-公开
    非易失性存储器件

    公开(公告)号：US20100038731A1

    公开(公告)日：2010-02-18

    申请号：US12441254

    申请日：2006-11-02

    Applicant: Robertus P. Van Kampen ,  Robert Kazinczi

    Inventor： Robertus P. Van Kampen ,  Robert Kazinczi

    IPC: H01L29/84 ,  H01L21/3205

    CPC classification number: H01H59/0009 ,  B81C1/0015 ,  B81C2201/014 ,  B81C2201/0176 ,  G11C23/00 ,  H01H51/12

    Abstract: A non-volatile memory device and method of manufacturing a non-volatile micro-electromechanical memory cell. The method comprises the first step of depositing a first layer of sacrificial material on a substrate by use of Atomic Layer Deposition The second step of the method is providing a cantilever (101) over at least a portion of the first layer of sacrificial material. The third step is depositing, by use of Atomic Layer Deposition, a second layer of sacrificial material over the first layer of sacrificial material and over a portion of the cantilever such that a portion of the cantilever is surrounded by sacrificial material. The fourth step is providing a further layer material (107) which covers at least a portion of the second layer of sacrificial material. Finally, the last step is etching away the sacrificial material surrounding the cantilever, thereby defining a cavity (102) in which the cantilever is suspended.

    Abstract translation: 一种非易失性存储器件和制造非易失性微机电存储单元的方法。 该方法包括通过使用原子层沉积在衬底上沉积第一层牺牲材料的第一步骤。该方法的第二步是在第一层牺牲材料的至少一部分上提供悬臂（101）。 第三步骤是通过使用原子层沉积在第一层牺牲材料上并在悬臂的一部分上沉积第二层牺牲材料，使得悬臂的一部分被牺牲材料包围。 第四步是提供覆盖牺牲材料的第二层的至少一部分的另外的层材料（107）。 最后，最后一步是蚀刻掉围绕悬臂的牺牲材料，由此限定悬臂悬挂在其中的空腔（102）。

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