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    EPI-POLY ETCH STOP FOR OUT OF PLANE SPACER DEFINED ELECTRODE
    104.
    发明公开
    EPI-POLY ETCH STOP FOR OUT OF PLANE SPACER DEFINED ELECTRODE 审中-公开
    EPI聚头部停止层，用于由外部间隔物定义的电极

    公开(公告)号：EP2973665A4

    公开(公告)日：2016-11-16

    申请号：EP14770043

    申请日：2014-03-08

    Applicant: BOSCH GMBH ROBERT

    Inventor： GRAHAM ANDREW ,  YAMA GARY ,  O'BRIEN GARY

    IPC: H01L21/28

    CPC classification number: B81B3/0021 ,  B81B2201/0271 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00095 ,  B81C1/00166 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2201/0177 ,  B81C2203/0136

    Abstract: In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.

    Abstract translation: 在一个实施例中，形成平面外电极的方法包括在器件层的上表面上形成氧化物层，蚀刻限定延伸穿过氧化物层的沟槽的蚀刻停止周界，在第一帽层部分上形成 氧化层的上表面和蚀刻停止周界界定沟槽内，蚀刻延伸穿过第一覆盖层部分并停止在氧化物层处的第一电极周界，限定沟槽，在第一电极周界界定槽内沉积第一材料部分，沉积 在沉积的第一材料部分上方的第二盖层部分，以及用蚀刻停止部分提供横向蚀刻停止的部分氧化物层的蒸气。

    HERSTELLUNGSVERFAHREN FÜR EIN MIKROMECHANISCHES BAUELEMENT UND ENTSPRECHENDES MIKROMECHANISCHES BAUELEMENT
    105.
    发明公开
    HERSTELLUNGSVERFAHREN FÜR EIN MIKROMECHANISCHES BAUELEMENT UND ENTSPRECHENDES MIKROMECHANISCHES BAUELEMENT 有权
    用于微机械结构及相应的微机械部件

    公开(公告)号：EP2969913A1

    公开(公告)日：2016-01-20

    申请号：EP14710849.2

    申请日：2014-03-12

    Applicant: Robert Bosch GmbH

    Inventor： HEUCK, Friedjof ,  SCHELLING, Christoph

    IPC: B81C1/00

    CPC classification number: B81C1/00619 ,  B81C1/00412 ,  B81C2201/0177 ,  B81C2201/0188

    Abstract: The invention relates to a method for producing a micromechanical component and to a corresponding micromechanical component. The production method comprises the following steps: providing a substrate (1) with a monocrystalline starting layer (1c) which is exposed in structured regions (3a-3e), said structured regions (3a-3e) having an upper face (O) and lateral flanks (F), wherein a catalyst layer (2), which is suitable for promoting a silicon epitaxial growth of the exposed upper face (O) of the structured monocrystalline starting layer (1c), is provided on the upper face (O), and no catalyst layers (2) are provided on the flanks (F); and carrying out a selective epitaxial growth process on the upper face (O) of the monocrystalline starting layer (1c) using the catalyst layer (2) in a reactive gas atmosphere in order to form a micromechanical functional layer (3').

    VERFAHREN ZUR HERSTELLUNG VON MEMS-STRUKTUREN
    108.
    发明公开
    VERFAHREN ZUR HERSTELLUNG VON MEMS-STRUKTUREN 审中-公开
    用于生产MEMS结构

    公开(公告)号：EP2051929A1

    公开(公告)日：2009-04-29

    申请号：EP07729426.2

    申请日：2007-05-23

    Applicant: Robert Bosch GmbH

    Inventor： SCHEURLE, Andreas

    IPC: B81C1/00

    CPC classification number: B81C1/00714 ,  B81C2201/0109 ,  B81C2201/0177

    Abstract: The invention relates to a method for the production of MEMS structures with at least one functional layer of silicon that contains structures that are released by the removal of a sacrificial layer, with at least one sacrificial layer and at least one functional layer, precipitated in such a way that they grow monocrystalline, and with the sacrificial layer consisting of a mixed silicon-germanium layer.

    Epitaxial seal (episeal) pressure sensor
    110.
    发明公开
    Epitaxial seal (episeal) pressure sensor 有权
    Drucksensor mit epitaktischer Dichtung（episeal）

    公开(公告)号：EP1452844A1

    公开(公告)日：2004-09-01

    申请号：EP03029915.0

    申请日：2003-12-29

    Applicant: ROBERT BOSCH GMBH

    Inventor： Lutz, Markus ,  Partridge, Aaron

    IPC: G01L9/00 ,  H01L21/00 ,  B81C1/00

    CPC classification number: B81C1/00047 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0109 ,  B81C2201/0177 ,  B81C2203/0145 ,  G01L9/0045 ,  G01L9/0054 ,  G01L9/0073

    Abstract: A silicon pressure sensor (10) shows an epitaxial layer (epilayer) (21,20) wrapped up around the edge of a cavity (15), which may be defined by an oxide layer etched away. The epitaxial layer (21,20) forms a membrane (19) with a piezoresistor (18). Alternatively a capacitance sensor may be used. Vent holes (14) are shown as vertical slots. Epitaxial silicon layer (17) grows as a single crystal on the side walls of the vent holes (14) and pinch them off by forming plugs (17) as an epitaxial seal (episeal).

    Abstract translation: 硅压力传感器（10）示出了围绕空腔（15）的边缘缠绕的外延层（外延层）（21,20），其可以被蚀刻掉的氧化物层限定。 外延层（21,20）形成具有压敏电阻（18）的膜（19）。 或者，可以使用电容传感器。 排气孔（14）显示为垂直槽。 外延硅层（17）在通气孔（14）的侧壁上以单晶生长，并通过形成插塞（17）作为外延密封件（episeal）将其挤压。

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