公开(公告)号：USB517762I5

公开(公告)日：1976-03-16

申请号：US51776274

申请日：1974-10-24

IPC: H01J1/32 ,  H01J1/34

CPC classification number: H01J1/34 ,  H01J1/32 ,  H01J2201/3423

公开(公告)号：US3894295A

公开(公告)日：1975-07-08

申请号：US39848073

申请日：1973-09-18

Applicant: PHILIPS CORP

Inventor： SHANNON JOHN MARTIN ,  RALPH JOHN ERNEST

IPC: H04N5/335 ,  H01J1/34 ,  H01L21/00 ,  H01L27/144 ,  H01L27/146 ,  H01L31/112 ,  H01L31/14 ,  H01L31/153 ,  H01L15/00

CPC classification number: H01L31/153 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/00 ,  H01L27/1446 ,  H01L27/14679 ,  H01L27/14681 ,  H01L31/1123 ,  H01L31/1126

Abstract: An image intensifier or converter is described comprising an array of JFETs having separate gates which when pulsed block the channel of the associated JFET. Each JFET is connected in series with a display element, such as an electroluminescent diode. Incident imaging photons absorbed in the channel regions unblock the associated FET causing radiation emission from the associated display element.

Abstract translation: 描述了一种图像增强器或转换器，其包括具有分离的栅极的JFET阵列，当脉冲阻挡相关JFET的沟道时。 每个JFET与诸如电致发光二极管的显示元件串联连接。 在通道区域中吸收的入射成像光子解除阻塞相关联的FET，从而引起来自相关显示元件的辐射。

公开(公告)号：US3809941A

公开(公告)日：1974-05-07

申请号：US27077472

申请日：1972-07-11

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： BOURG H ,  CROMWELL R ,  BURNIE G ,  NICHOLSON J

IPC: H01J1/34

CPC classification number: H01J1/34 ,  H01J2201/3423 ,  H01J2201/3425

Abstract: A photoemitter of improved quantum efficiency is formed by smoke or low density deposition of photoemissive materials on a substrate. Significantly, the photoemissive layer is deposited in the presence of a low pressure gas to form a layer whose density is not greater than 20% and preferably not greater than 5% of the photoemissive material in its bulk form. Individual particle size is controlled and deposited particles are isolated, affording greater surface contact area with the subsequently deposited constituent materials of the photoemissive surface, thereby enhancing interaction and increasing the photoelectron emission. The low density, randomly oriented smoke deposits provide a photosensitive surface characterized by high absorption, low reflective losses, and low transmissive losses. The spectral response curve of smoke photoemitters peaks further into the red or near infrared region than prior art devices, rendering the smoke photoemitters of the invention ideally suited for use as near infrared sensors in low light level imaging system.

Abstract translation: 通过烟雾或光致发光材料在衬底上的低密度沉积形成提高量子效率的光电发生器。 重要的是，在低压气体的存在下沉积光发射层以形成密度不大于散装形式的光发射材料的20％，优选不大于5％的层。 单独的粒度被控制，并且沉积的颗粒被分离，与随后沉积的光发射表面的构成材料提供更大的表面接触面积，从而增强相互作用并增加光电子发射。 低密度，随机取向的烟雾沉积物提供了以高吸收，低反射损失和低透射损耗为特征的感光表面。 烟雾光谱仪的光谱响应曲线比现有技术的装置进一步高于红色或近红外区域，使得本发明的烟雾发光体理想地适合用作低光级成像系统中的近红外传感器。

公开(公告)号：US3699401A

公开(公告)日：1972-10-17

申请号：US3699401D

申请日：1971-05-11

Applicant: RCA CORP

Inventor： TIETJFN JAMES JOSEPH ,  WILLIAMS BROWN F ,  WANG CHIN CHUN

IPC: H01J1/34 ,  H01J29/38 ,  H01L21/205 ,  H01L15/00

CPC classification number: H01J29/38 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/007 ,  Y10S148/056 ,  Y10S148/059 ,  Y10S148/064 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/115 ,  Y10S148/119 ,  Y10S148/12 ,  Y10S148/15

Abstract: A transmissive semiconductor photocathode structure comprising a first monocrystalline epitaxial layer of silicon or germanium about 200 to 300 nanometers thick on a major surface of a transparent monocrystalline dielectric substrate. On the silicon or germanium layer is a second monocrystalline epitaxial layer of a III-V or II-VI semiconductor compound having a thickness of at least about three microns. On the second layer is a third monocrystalline epitaxial layer of a III-V semiconductor compound having an energy bandgap smaller than the second layer compound and having a thickness on the order of from about one micron to about five microns. Also disclosed is a photoemissive electron tube utilizing the transmissive photocathode structure, with a work function reducing material deposited on the emissive surface of the third layer.

Abstract translation: 一种透射半导体光电阴极结构，其包括在透明单晶电介质基底的主表面上的约200至300纳米厚的硅或锗的第一单晶外延层。 硅或锗层是具有至少约三微米厚度的III-V或II-VI半导体化合物的第二单晶外延层。 在第二层上是III-V半导体化合物的第三单晶外延层，其具有小于第二层化合物的能带隙，并且具有约1微米至约5微米的厚度。

公开(公告)号：US3478213A

公开(公告)日：1969-11-11

申请号：US3478213D

申请日：1967-09-05

Applicant: RCA CORP

Inventor： SIMON RALPH E ,  WILLIAMS BROWN F ,  WASSERMAN RALPH

IPC: H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J39/12

CPC classification number: H01J1/34 ,  H01J1/308 ,  H01J1/32 ,  H01J2201/3423 ,  Y10S148/051 ,  Y10S148/12

公开(公告)号：US20120103825A1

公开(公告)日：2012-05-03

申请号：US13284861

申请日：2011-10-28

Applicant: Jihun OH ,  Howard Branz

Inventor： Jihun OH ,  Howard Branz

IPC: H01J40/06 ,  C25B1/04 ,  B82Y20/00

CPC classification number: H01J40/06 ,  B82Y20/00 ,  C25B1/003 ,  C25B11/04 ,  H01J2201/3423 ,  Y02E60/368 ,  Y02P20/134 ,  Y02P20/135

Abstract: Exemplary embodiments are disclosed of anti-reflective nanoporous silicon for efficient hydrogen production by photoelectrolysis of water. A nanoporous black Si is disclosed as an efficient photocathode for H2 production from water splitting half-reaction.

Abstract translation: 公开了抗反射纳米多孔硅的示例性实施例，用于通过光电解水来有效地生产氢。 公开了一种纳米多孔黑色Si作为从分水半反应生产H 2的有效光电阴极。

公开(公告)号：US06642657B2

公开(公告)日：2003-11-04

申请号：US09992694

申请日：2001-11-20

Applicant: Frederick M. Mako ,  Amnon Fisher

Inventor： Frederick M. Mako ,  Amnon Fisher

IPC: H01J2306

CPC classification number: H01J3/023 ,  H01J23/06 ,  H01J2201/3423

Abstract: An electron gun that generate an electron flow and the application of this gun to produce rf energy or for injectors. The electron gun includes an electrostatic cavity having a first stage with emitting faces and multiple stages with emitting sections. The gun also includes a mechanism for producing an electrostatic force which encompasses the emitting faces and the multiple emitting sections so electrons are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons and to further contact other emitting sections to generate additional electrons and so on then finally to escape the end of the cavity. A method for producing a flow of electrons.

Abstract translation: 产生电子流的电子枪以及该枪用于产生射流能量或喷射器的应用。 电子枪包括具有发射面的第一级和具有发射部的多级的静电腔。 枪还包括用于产生静电力的机构，其包围发射面和多个发射部分，使得电子从发射面朝向发射部分引导以接触发射部分并产生附加电子并且进一步接触其它发射部分 产生额外的电子等等，然后最终逃离空腔的末端。 一种产生电子流的方法。

公开(公告)号：US6146229A

公开(公告)日：2000-11-14

申请号：US080424

申请日：1998-05-18

Applicant: Arlynn W. Smith ,  Warren David Vrescak

Inventor： Arlynn W. Smith ,  Warren David Vrescak

IPC: H01J1/34 ,  H01J9/12 ,  H01J9/02

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/5001

Abstract: A photocathode device for use in an image intensifier, fabricated with a photoemissive semiconductor wafer having an active cathode layer which includes a central region of a first predetermined height surrounded by a peripheral region of a second predetermined height. The first predetermined height of the central region is configured to be greater than the second predetermined height of the peripheral region in order to create a recessed contact structure which is less likely to have unwanted emission points. A layer of conductive material covers the peripheral region to provide an electrical contact to the photocathode device. A layer of insulating material covers the layer of conductive material in order to protect the contact layer from being damage during handling operations.

Abstract translation: 一种用于图像增强器的光电阴极器件，其由具有活性阴极层的发光半导体晶片制造，所述活性阴极层包括由第二预定高度的周边区域包围的第一预定高度的中心区域。 中心区域的第一预定高度被配置为大于周边区域的第二预定高度，以便产生不太可能具有不需要的发射点的凹陷接触结构。 一层导电材料覆盖周边区域以提供与光电阴极器件的电接触。 一层绝缘材料覆盖导电材料层，以保护接触层在操作过程中不被损坏。

公开(公告)号：US6005257A

公开(公告)日：1999-12-21

申请号：US527688

申请日：1995-09-13

Applicant: Joseph P. Estrera ,  Keith T. Passmore ,  Timothy W. Sinor

Inventor： Joseph P. Estrera ,  Keith T. Passmore ,  Timothy W. Sinor

IPC: H01J1/34 ,  H01L3/0304 ,  H01J31/26 ,  H01J40/06

CPC classification number: H01J9/233 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50015

Abstract: An improved photocathode and image intensifier tube are disclosed along with a method for making both the tube and photocathode. The disclosed photocathode and image intensifier tube have an active layer comprising two or more sublayers. The first sublayer has a first concentration of a group III-V semiconductor compound while the second sublayer has a second concentration of the group III-V semiconductor compound. The multilayer active layer is coupled to a window layer.

公开(公告)号：US5726076A

公开(公告)日：1998-03-10

申请号：US365242

申请日：1994-12-28

Applicant: G. William Tasker ,  Jerry Randall Horton

Inventor： G. William Tasker ,  Jerry Randall Horton

IPC: H01J9/12 ,  H01J43/24 ,  H01J49/02 ,  H01J41/00

CPC classification number: H01J43/246 ,  H01J49/025 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3423

Abstract: The invention is directed to continuous dynodes formed by thin-film processing techniques. According to one embodiment of the invention, a continuous dynode is formed by reacting a chemical vapor in the presence of a substrate at a temperature and pressure sufficient to result in chemical vapor deposition. In another embodiment, the layer is formed by liquid phase deposition and in another embodiment, the layer is formed by nitriding or oxidizing a substrate.

Abstract translation: 本发明涉及通过薄膜加工技术形成的连续倍增极。 根据本发明的一个实施方案，通过在足以导致化学气相沉积的温度和压力下在基板存在下使化学气相反应形成连续的倍增极。 在另一个实施方案中，该层通过液相沉积形成，并且在另一个实施方案中，该层通过氮化或氧化底物而形成。