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公开(公告)号:KR101133181B1
公开(公告)日:2012-04-09
申请号:KR1020100048020
申请日:2010-05-24
Applicant: (재)한국나노기술원
IPC: H01L31/0224
Abstract: PURPOSE: A graphene thin film in which a pattern is formed is provided to improve adhesive force with a high position film by including dangling bond and a chemical functional group in the unevenness part of a graphene layer. CONSTITUTION: A graphene thin film comprises a graphene layer(210) and a chemical functional group(220). Concavo-convex is formed on the surface of the graphene layer. The density of edge part is increased when the concavo-convex is formed on the surface of the graphene layer. The chemical functional group is formed on the surface of the graphene layer. The chemical functional group is more than one among phenol, carbonyl, carboxyl, quinine, and lactone.
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公开(公告)号:KR1020120022207A
公开(公告)日:2012-03-12
申请号:KR1020100085509
申请日:2010-09-01
Applicant: (재)한국나노기술원
IPC: H01L33/22
CPC classification number: H01L33/0079 , H01L21/268 , H01L2933/0083
Abstract: PURPOSE: A semiconductor light emitting device including a patterned semiconductor layer and a manufacturing method thereof are provided to improve the efficiency of the semiconductor light emitting device by decreasing laser to an active layer in a laser lift off. CONSTITUTION: A p type electrode(135) is formed on a conductive substrate. A p type semiconductor layer, an active layer(120), and an n type semiconductor layer are successively laminated on the p type electrode. An n type electrode(145) is formed on an n type semiconductor layer. A concave part of a nano meter photonic crystal pattern is regularly formed on the surface of the n type semiconductor layer.
Abstract translation: 目的:提供包括图案化半导体层的半导体发光器件及其制造方法,以通过在激光剥离中将有源层激光降低而提高半导体发光器件的效率。 构成:在导电性基板上形成p型电极(135)。 在p型电极上依次层叠p型半导体层,有源层(120)和n型半导体层。 n型电极(145)形成在n型半导体层上。 在n型半导体层的表面上规则地形成纳米级光子晶体图案的凹部。
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公开(公告)号:KR1020110136340A
公开(公告)日:2011-12-21
申请号:KR1020100056267
申请日:2010-06-15
Applicant: (재)한국나노기술원
CPC classification number: C01B32/184 , B29C33/38 , B81C1/0046 , B82B3/00 , C01B2204/04 , G03F7/0002
Abstract: PURPOSE: A method for forming a graphene pattern using an imprinting technique is provided to easily adjust the thickness of transferred graphene by adjusting the strength of a voltage if a graphene transferring process is implemented based on an electronic filed. CONSTITUTION: An imprint stamp(210), in which a pattern(205) is formed on a master substrate(200), is prepared. A metal film(220) containing a graphitization catalyst is formed on the imprint stamp. Graphene(230) is formed on the imprint stamp. The graphene is transferred to a substrate(240) for manufacturing devices in order to form a graphene pattern. The graphitization catalyst is one or more selected from Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, and Zr.
Abstract translation: 目的:提供一种使用压印技术形成石墨烯图案的方法,以便通过基于电子场来实现石墨烯转印处理,通过调节电压的强度来容易地调节转印石墨烯的厚度。 构成:准备在母板(200)上形成有图案(205)的压印印模(210)。 在压印印模上形成含有石墨化催化剂的金属膜(220)。 石墨烯(230)形成在印记上。 将石墨烯转移到用于制造器件的衬底(240)以形成石墨烯图案。 石墨化催化剂是选自Ni,Co,Fe,Pt,Au,Al,Cr,Cu,Mg,Mn,Mo,Rh,Si,Ta,Ti,W,U,V和Zr中的一种或多种。
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公开(公告)号:KR1020110054386A
公开(公告)日:2011-05-25
申请号:KR1020090111008
申请日:2009-11-17
Applicant: (재)한국나노기술원
IPC: H01L21/027
CPC classification number: G03F7/0002 , B29C59/022 , H01L21/0332
Abstract: PURPOSE: A method for forming a graphene using an imprint method is provided to prevent metal contamination by omitting a graphite catalyst through an etching process. CONSTITUTION: A patterned imprint stamp(210) is manufactured. The imprint stamp is made of graphite catalyst. A graphene(220) is formed by supplying and processing vapor carbon supply source to the imprint stamp thermally. The graphene formed on the imprint stamp is transferred on the substrate by using the imprint method. A graphene pattern(240) is formed on the substrate for manufacturing a device.
Abstract translation: 目的:提供使用压印方法形成石墨烯的方法,以通过蚀刻工艺省略石墨催化剂来防止金属污染。 构成:制作图案印记印章(210)。 印记邮票由石墨催化剂制成。 石墨烯(220)是通过向压印印模热供应和处理蒸气碳源而形成的。 在压印上形成的石墨烯通过使用压印方法在基板上转印。 在用于制造器件的衬底上形成石墨烯图案(240)。
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