公开(公告)号：KR101334182B1

公开(公告)日：2013-11-28

申请号：KR1020070051560

申请日：2007-05-28

Applicant: 삼성전자주식회사

Inventor： 손경석 ,  이상윤 ,  류명관 ,  김태상 ,  권장연 ,  박경배 ,  정지심

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: ZnO 계 박막 트랜지스터의 제조방법에 관해 개시된다. ZnO 계 박막 트랜지스터는 채널 층의 산소함량에 매우 민감한 특성 변화를 보인다. 바텀 게이트 방식의 박막 트랜지스터의 제조에서 불가피한 채널 층의 손상과 이에 따른 깊은 음의 문턱 전압을 보상시키기 위하여 불안정한 상태의 산소를 다량 함유하는 저온 패시베이션 층이나 식각 저지층 등의 산화물 층을 이용하여 열처리(annealing)시 산화물 층과 채널 층과의 계면 반응에 의해 캐리어의 농도를 감소시킨다.

公开(公告)号：KR101270168B1

公开(公告)日：2013-05-31

申请号：KR1020060090467

申请日：2006-09-19

Applicant: 삼성전자주식회사

Inventor： 정지심 ,  김종만 ,  권장연 ,  박경배

IPC: H05B33/00 ,  H05B33/02 ,  H05B33/10

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/3244

Abstract: 디스플레이는 OLED를구동하는드라이빙트랜지스터와상기드라이빙트랜지스터의동작을제어하는스위칭트랜지스터를구비하고, 상기드라이빙트랜지스터및스위칭트랜지스터는서로다른결정립크기를가지도록실리사이드에의한차등적결정화과정을거쳐얻어진다. 유기전자발광디스플레이를설계함에있어서스위칭트랜지스터와드라이빙트랜지스터의요구조건에부응할수 있으므로저이동도의스위칭트랜지스터와고이동도드라이빙트랜지스터를효율적으로제조할수 있다.

公开(公告)号：KR1020130050082A

公开(公告)日：2013-05-15

申请号：KR1020110115236

申请日：2011-11-07

Applicant: 삼성전자주식회사

Inventor： 이광희 ,  김규식 ,  박경배 ,  임동석 ,  임선정

IPC: H01L51/46 ,  C07D471/04 ,  C07D409/14 ,  H01L27/146

CPC classification number: H01L51/0072 ,  H01L51/0068 ,  H01L51/0074 ,  H01L51/4253 ,  Y10S428/917

Abstract: PURPOSE: An organic photoelectric device and an image sensor are provided to implement a high integration by efficiently absorbing light of a green wavelength range. CONSTITUTION: An anode faces a cathode. An active layer is located between the anode and the cathode. The active layer includes a quinacridone derivative and a thiophene derivative. The thiophene derivative includes a cyanovinyl group.

Abstract translation: 目的：提供有机光电装置和图像传感器，以通过有效吸收绿色波长范围的光来实现高集成度。 构成：阳极面向阴极。 有源层位于阳极和阴极之间。 活性层包括喹吖啶酮衍生物和噻吩衍生物。 噻吩衍生物包括氰基乙烯基。

公开(公告)号：KR1020130040439A

公开(公告)日：2013-04-24

申请号：KR1020110105205

申请日：2011-10-14

Applicant: 삼성전자주식회사

Inventor： 추교진 ,  히로시게고토 ,  김규식 ,  서진호 ,  설상철 ,  이광희 ,  박경배 ,  이경호 ,  김윤경

IPC: H01L51/42 ,  H01L27/30 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/369

CPC classification number: H01L27/307 ,  H01L51/424 ,  H04N5/3698 ,  H04N5/37452 ,  H04N5/378

Abstract: PURPOSE: An organic pixel including organic photodiode, a manufacturing method thereof, and an apparatuses including the same are provided to respectively operate charge accumulation and charge transmission according to the voltage of a transmission control signal. CONSTITUTION: An interconnection layer(30) is formed on a semiconductor substrate(20). The interconnection layer includes a first contact(31a), a first electrode(35), and a metal line(37). The first electrode receives a transmission control signal(TG) through the metal line. An organic photodiode(40) is formed on the interconnection layer. The organic photodiode includes an insulating layer(41), a second electrode(49), and a photoelectric conversion region(43). The photoelectric conversion region includes an electron donation organic material and an electron acceptation organic material.

Abstract translation: 目的：提供包括有机光电二极管的有机像素及其制造方法以及包括该有机光电二极管的制造方法的装置，以分别根据传输控制信号的电压来进行电荷累积和电荷传输。 构成：在半导体衬底（20）上形成互连层（30）。 互连层包括第一接触（31a），第一电极（35）和金属线（37）。 第一电极通过金属线接收传输控制信号（TG）。 在互连层上形成有机光电二极管（40）。 有机光电二极管包括绝缘层（41），第二电极（49）和光电转换区域（43）。 光电转换区域包括给电子有机材料和电子接受有机材料。

公开(公告)号：KR1020120077415A

公开(公告)日：2012-07-10

申请号：KR1020100139354

申请日：2010-12-30

Applicant: 삼성전자주식회사 ,  연세대학교 산학협력단

Inventor： 박경배 ,  류명관 ,  이광희 ,  선종백 ,  배중현 ,  정웅희 ,  이상윤 ,  김현재

IPC: H01B5/14 ,  H01L29/786

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

Abstract: PURPOSE: A composition for forming an oxide semiconductor, an inkjet printing process using the same, and an electronic device including the oxide semiconductor thin film are provided to obtain an oxide semiconductor without defects through an inkjet printing process by using a composition containing a fixed quantity of sol stabilizer. CONSTITUTION: A gate electrode(20) and a gate insulation layer(21) covering the gate electrode are formed on a substrate(10). A channel layer(22) corresponding to the gate electrode is formed on the gate insulation layer. A source electrode(24a) and a drain electrode(24b) are formed on both sides of the channel layer. An etch stopper is formed between the source electrode and the drain electrode. The gate electrode controls the current flow between the source electrode and the drain electrode.

Abstract translation: 目的：提供一种用于形成氧化物半导体的组合物，使用其的喷墨印刷方法和包括氧化物半导体薄膜的电子器件，以通过使用含有固定量的组合物通过喷墨印刷方法获得无缺陷的氧化物半导体 的溶胶稳定剂。 构成：在基板（10）上形成覆盖栅电极的栅电极（20）和栅极绝缘层（21）。 在栅绝缘层上形成对应于栅电极的沟道层（22）。 源极电极（24a）和漏电极（24b）形成在沟道层的两侧。 在源电极和漏电极之间形成蚀刻停止层。 栅电极控制源电极和漏电极之间的电流。

公开(公告)号：KR1020110106225A

公开(公告)日：2011-09-28

申请号：KR1020100106851

申请日：2010-10-29

Applicant: 삼성전자주식회사

Inventor： 박경배 ,  류명관 ,  선종백 ,  이상윤 ,  구본원

IPC: H01L29/786 ,  G02F1/136

CPC classification number: H01L29/7869 ,  H01L29/4908 ,  H01L29/66742

Abstract: 게이트 전극, 상기 게이트 전극과 중첩하며 제1 금속 산화물을 포함하는 반도체, 상기 게이트 전극과 상기 반도체 사이에 위치하며 제2 금속 산화물을 포함하는 게이트 절연막, 그리고 상기 반도체와 전기적으로 연결되어 있는 소스 전극 및 드레인 전극을 포함하고, 상기 제1 금속 산화물 및 상기 제2 금속 산화물은 하나 이상의 금속을 공통적으로 포함하는 박막 트랜지스터 및 그 제조 방법과 상기 박막 트랜지스터를 포함하는 표시 장치를 제공한다.

公开(公告)号：KR1020090095315A

公开(公告)日：2009-09-09

申请号：KR1020080020585

申请日：2008-03-05

Applicant: 삼성전자주식회사

Inventor： 박경배 ,  김태상 ,  이상윤 ,  류명관 ,  권장연 ,  유병욱 ,  손경석 ,  정지심

IPC: C09K13/04 ,  H01L21/306 ,  H01L29/786

CPC classification number: C09K13/04 ,  C23F1/16 ,  H01L21/306 ,  H01L29/41733 ,  H01L29/7869

Abstract: An etchant for the source of an oxide semiconductor thin film transistor and a drain electrode, and a method for preparing an oxide semiconductor thin film transistor by using the etchant are provided to prevent the back etching of an oxide semiconductor and the dissolution of an oxide semiconductor and to improve etching rate. An etchant for the source of an oxide semiconductor thin film transistor and a drain electrode comprises hydrogen peroxide, ammonium hydroxide, and water. A manufacturing method of an oxide semiconductor thin film transistor comprises the steps of forming a gate on a substrate(110), and forming a gate insulating layer(114) on the substrate so as to cover the gate; forming a channel layer(116) comprising an oxide semiconductor on the gate insulating layer; and forming a metal layer for the formation of a source and a drain electrode at on both surfaces of the channel layer, and pattering it by using the etchant to form a source and drain electrodes(118a,118b).

Abstract translation: 提供了用于氧化物半导体薄膜晶体管和漏极的源的蚀刻剂，以及通过使用蚀刻剂制备氧化物半导体薄膜晶体管的方法，以防止氧化物半导体的反向蚀刻和氧化物半导体的溶解 并提高蚀刻速率。 用于氧化物半导体薄膜晶体管和漏电极源的蚀刻剂包括过氧化氢，氢氧化铵和水。 氧化物半导体薄膜晶体管的制造方法包括以下步骤：在衬底（110）上形成栅极，并在衬底上形成栅极绝缘层（114）以覆盖栅极; 在所述栅极绝缘层上形成包含氧化物半导体的沟道层（116）; 以及在沟道层的两个表面上形成用于形成源极和漏极的金属层，并且通过使用蚀刻剂来形成源极和漏极以形成源极和漏极（118a，118b）。

公开(公告)号：KR1020090079696A

公开(公告)日：2009-07-22

申请号：KR1020080005854

申请日：2008-01-18

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 박경배 ,  김홍범 ,  염근영 ,  이형철 ,  이상윤 ,  류명관 ,  김태상 ,  권장연 ,  손경석 ,  정지심

IPC: H05H1/26 ,  H01L21/205

CPC classification number: H01J37/3211 ,  H01J37/32183 ,  H01J37/32431 ,  H01J37/32715 ,  H01Q1/366 ,  H05H1/46 ,  H05H2001/2412 ,  H05H2001/4667 ,  H05H2001/4682

Abstract: A plasma processing apparatus having linear antennas is provided to improve density uniformity of plasma by changing a thickness of a dielectric for surrounding the linear antenna. A plasma processing apparatus having linear antennas includes a reaction chamber(110), a substrate supporting plate(120), linear antennas(132), an RF power source(138), and a dielectric(142). The substrate supporting plate is installed in a lower side of the inside of the reaction chamber in order to support a substrate to be processed. The linear antennas are used for inducing electric field to generate electric field. The linear antennas are installed in parallel to each other at an upper side of the inside of the reaction chamber. The RF power source is connected to the linear antennas in order to supply RF power to the linear antennas. The dielectric is formed to surround each of the linear antennas. The thickness of the dielectric is gradually reduced from a RF power input terminal of each linear antenna to a grounding terminal(132b).

Abstract translation: 提供具有线性天线的等离子体处理装置，通过改变用于包围线状天线的电介质的厚度来改善等离子体的密度均匀性。 具有线性天线的等离子体处理装置包括反应室（110），基板支撑板（120），线性天线（132），RF电源（138）和电介质（142）。 基板支撑板安装在反应室内侧的下侧，以便支撑待处理的基板。 线性天线用于感应电场以产生电场。 线性天线在反应室内部的上侧彼此平行地安装。 RF电源连接到线性天线，以便向线性天线提供RF功率。 电介质形成为围绕每个线性天线。 电介质的厚度从每个线性天线的RF功率输入端逐渐减小到接地端子（132b）。

公开(公告)号：KR1020090057690A

公开(公告)日：2009-06-08

申请号：KR1020070124383

申请日：2007-12-03

Applicant: 삼성전자주식회사

Inventor： 손경석 ,  이상윤 ,  류명관 ,  김태상 ,  권장연 ,  박경배 ,  정지심

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L21/265

Abstract: A method for manufacturing an oxide semiconductor thin film transistor is provided to improve stability and reliability of the semiconductor thin film transistor by using an oxide semiconductor made of a channel material. A gate insulating layer(114) is formed on a substrate with a gate(112). A channel layer(116) made of the oxide semiconductor is formed on a gate insulating layer. A source electrode(118a) and a drain electrode(118b) are formed in both sides of the channel layer. The plasma process is performed to supply the oxygen to the channel layer. The protection layer covering the source and drain electrodes, and the channel layer is formed. After forming the protection layer, the thermal process is performed.

Abstract translation: 提供一种用于制造氧化物半导体薄膜晶体管的方法，以通过使用由沟道材料制成的氧化物半导体来改善半导体薄膜晶体管的稳定性和可靠性。 在具有栅极（112）的基板上形成栅极绝缘层（114）。 在栅极绝缘层上形成由氧化物半导体构成的沟道层（116）。 源极电极（118a）和漏电极（118b）形成在沟道层的两侧。 执行等离子体处理以将氧气供应至沟道层。 形成覆盖源电极和漏电极的保护层以及沟道层。 形成保护层后，进行热处理。

公开(公告)号：KR1020090010757A

公开(公告)日：2009-01-30

申请号：KR1020070074119

申请日：2007-07-24

Applicant: 삼성전자주식회사

Inventor： 정지심 ,  이상윤 ,  류명관 ,  권장연 ,  박경배

IPC: H01L29/786 ,  H01L21/20

CPC classification number: H01L21/2053 ,  H01L29/6675

Abstract: A polycrystalline silicon thin film and a method of thin film transistor applying the same are provided to obtain medium quality of a poly-crystal silicon and a amorphous silicon in order to be used in a high quality electronic product. A silicon thin film(20) is formed with high density plasma chemical vapor deposition having plasma density more than 2.00E+11cm-3 on a substrate(10). Hydrogen gas is included to reaction gas. The gas forming the silicon thin film comprises one selected from the group of Ar and He. A polycrystalline silicon thin film and a method of thin film transistor applying the same comprises a step for forming a channel region and active layer having a source region and a drain region of the both sides of the channel regions.

Abstract translation: 提供多晶硅薄膜及其应用薄膜晶体管的方法以获得多晶硅和非晶硅的介质质量，以便用于高质量的电子产品中。 在衬底（10）上形成具有大于2.00E + 11cm-3的等离子体密度的高密度等离子体化学气相沉积的硅薄膜（20）。 氢气被包含在反应气体中。 形成硅薄膜的气体包括选自Ar和He的一种。 多晶硅薄膜和施加该多晶硅薄膜的薄膜晶体管的方法包括形成具有沟道区两侧的源极区和漏极区的沟道区和有源层的步骤。