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公开(公告)号：KR1020050060308A
公开(公告)日：2005-06-22
申请号：KR1020030091895
申请日：2003-12-16
Applicant: 한국전자통신연구원
Abstract: 탄소나노튜브를 이용한 전계 방출 소자 및 그 제조 방법을 제공한다. 본 발명의 일 관점에 따른 전계 방출 소자는, 하부전극과 측방향으로 일정 간극 이격된 하부전극연결선, 하부전극 상에 탄소나노튜브 및 도전성 접착물의 혼합물로 구성되되 도전성 접착물에 의해 하부전극 상에 부착되는 탄소나노튜브로서의 전계방출팁, 및 탄소나노튜브 및 상기 도전성 접착물의 혼합물로 구성되되 하부전극과 하부전극연결선 사이의 간극을 메우는 혼합물 부분으로서의 저항부를 포함하여 구성될 수 있다.
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公开(公告)号：KR100480310B1
公开(公告)日：2005-04-07
申请号：KR1020020057829
申请日：2002-09-24
Applicant: 한국전자통신연구원
IPC: H01L29/786
Abstract: 본 발명은 2 층 충전기를 갖는 디스플레이 픽셀 및 그 제조방법에 관한 것으로, 박막 트랜지스터 및 충전기를 갖는 디스플레이 픽셀의 제조방법에 있어서, 기판 상부에 활성층을 형성하는 단계와 활성층 상부에 게이트 산화막, 게이트 층 및 캡핑 층을 순차적으로 증착하는 단계와 게이트 층 및 캡핑 층을 식각하여 게이트를 형성하는 단계와 게이트의 측면에 스페이서를 형성하고, 전체 상부에 이온 주입을 실시하는 단계 및 전체 상부에 도전층을 증착하여 게이트와 도전층 및 게이트와 활성층 사이에 충전기를 형성하는 단계를 포함한다. 따라서, 충전기가 화소에서 차지하는 면적을 1/2 이하로 줄일 수 있는 효과가 있다.
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公开(公告)号：KR1020050022580A
公开(公告)日：2005-03-08
申请号：KR1020030059401
申请日：2003-08-27
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A field emission device is provided to prevent a current leakage from flowing into a gate serving as an electron emitting electrode, and allow for ease of control of electron emission. CONSTITUTION: A field emission device comprises a cathode unit(100), a field emission suppression-gate unit(200), a field emission induction-gate unit(300), and an anode unit(400). The cathode unit includes a substrate(110), a cathode electrode(120) formed on the substrate, and a field emitter(130) formed on a part of the cathode electrode. The field emission suppression-gate unit is formed such that the field emitter is surrounded by the field emission suppression-gate unit. The field emission induction-gate unit is formed on the field emission suppression-gate unit. The anode unit is opposed to the field emitter, and has an anode electrode for receiving electrons emitted from the field emitter. The field emission suppression-gate unit suppresses emission of electrons from the field emitter. The field emission induction-gate unit induces emission of electrons from the field emitter.
Abstract translation: 目的：提供场致发射器件以防止电流泄漏流入用作电子发射电极的栅极，并且易于控制电子发射。 构成：场致发射器件包括阴极单元（100），场致发射抑制门单元（200），场发射感应门单元（300）和阳极单元（400）。 阴极单元包括基板（110），形成在基板上的阴极电极（120）和形成在阴极电极的一部分上的场致发射体（130）。 场致发射抑制栅单元形成为场致发射体被场发射抑制栅单元包围。 场致发射感应门单元形成在场致发射抑制门单元上。 阳极单元与场发射体相对，并且具有用于接收从场发射器发射的电子的阳极电极。 场发射抑制栅单元抑制从场发射器发射的电子。 场致发射感应门单元引起来自场致发射体的电子的发射。
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公开(公告)号：KR100436774B1
公开(公告)日：2004-06-23
申请号：KR1020010073394
申请日：2001-11-23
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A method of fabricating a field emission display is provided to heighten the emission efficiency of the emitter by forming the carbon nanotube in the emitter vertical to the substrate. CONSTITUTION: In a method of fabricating a field emission display, an anode electrode(8) and a phosphor layer(7) are sequentially formed on the entire surface of a front substrate(2). A cathode electrode(3) is formed on the surface of a rear substrate(1). A carbon nanotube resin is coated onto the cathode electrode, and heat-treated to form an emitter(10). The front and the rear substrates are sealed to each other. After the formation of the cathode electrode, an insulating layer(5) is formed on the cathode electrode, and a gate electrode(6) is formed on the insulating layer. The carbon nanotube resin contains binder, conductive powder, and carbon nanotube.
Abstract translation: 目的：提供一种制造场致发射显示器的方法，以通过在垂直于衬底的发射体中形成碳纳米管来提高发射体的发射效率。 构成：在制造场致发射显示器的方法中，在前基板（2）的整个表面上依次形成阳极电极（8）和荧光体层（7）。 阴极电极（3）形成在后基板（1）的表面上。 将碳纳米管树脂涂布在阴极上，并进行热处理以形成发射体（10）。 前基板和后基板相互密封。 在形成阴极之后，在阴极上形成绝缘层（5），并在绝缘层上形成栅电极（6）。 碳纳米管树脂含有粘合剂，导电粉末和碳纳米管。
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公开(公告)号：KR1020040012106A
公开(公告)日：2004-02-11
申请号：KR1020020045477
申请日：2002-08-01
Applicant: 한국전자통신연구원
IPC: H01L29/786
Abstract: PURPOSE: A high voltage TFT(Thin Film Transistor) having offset in verticle direction is provided to be capable of stabilizing the characteristics of the high voltage TFT and securing low process cost. CONSTITUTION: A high voltage TFT is provided with a gate electrode(202), a gate isolating layer(203) formed at the upper portion of the gate electrode, and an amorphous silicon active layer(204) formed at the predetermined upper portion of the gate isolating layer. The high voltage TFT further includes an N+ type amorphous silicon layer(205) formed at the upper portion of the amorphous silicon active layer for improving the contact characteristic with a source/drain electrode. Preferably, the TFT has amorphous silicon layer off-set vertically formed between the edge portion of the active layer and the source/drain electrode.
Abstract translation: 目的：提供在垂直方向上具有偏移的高压TFT（薄膜晶体管），以便能够稳定高压TFT的特性并确保低的工艺成本。 构成：高压TFT设置有栅电极（202），形成在栅电极的上部的栅绝缘层（203）和形成在栅电极的预定上部的非晶硅有源层（204） 栅极隔离层。 高压TFT还包括形成在非晶硅有源层的上部的N +型非晶硅层（205），用于改善与源/漏电极的接触特性。 优选地，TFT具有垂直形成在有源层的边缘部分和源极/漏极之间的非晶硅层。
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Patent Agency Ranking
公开(公告)号：KR1020020058450A
公开(公告)日：2002-07-12
申请号：KR1020000086556
申请日：2000-12-30
Applicant: 한국전자통신연구원
IPC: H01L21/3063
Abstract: PURPOSE: A selective etch method of silicon is provided to perform a wet etch having a good etch selectivity between a doped silicon thin film and an undoped silicon thin film. CONSTITUTION: An undoped silicon thin film(22) and a doped silicon thin film(23) are stacked on a defined process completed structure(21). Then, a mask pattern(24) is formed by selectively etching a photoresist or a metal having a wet etch selectivity with a polysilicon. Then, the doped silicon thin film(23) is selectively removed by a wet etching using the mask pattern(24). At this time, the wet etching is performed using a mixed solution made of HF, a nitric acid and an acetic acid or another mixed solution made of the HF, the nit acid and water. The mixed solution oxidizes a silicon thin film using the nitric acid and simultaneously etches an oxide using the HF.
Abstract translation: 目的：提供硅的选择性蚀刻方法来执行在掺杂的硅薄膜和未掺杂的硅薄膜之间具有良好蚀刻选择性的湿蚀刻。 构成：将未掺杂的硅薄膜（22）和掺杂的硅薄膜（23）堆叠在限定的工艺完成结构（21）上。 然后，通过用多晶硅选择性地蚀刻具有湿蚀刻选择性的光致抗蚀剂或金属来形成掩模图案（24）。 然后，通过使用掩模图案（24）的湿蚀刻选择性地去除掺杂硅薄膜（23）。 此时，使用由HF，硝酸和乙酸制成的混合溶液或由HF，硝酸和水制成的其它混合溶液进行湿式蚀刻。 混合溶液使用硝酸氧化硅薄膜，并使用HF同时蚀刻氧化物。
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公开(公告)号：KR1020020051214A
公开(公告)日：2002-06-28
申请号：KR1020000080802
申请日：2000-12-22
Applicant: 한국전자통신연구원
CPC classification number: H01J31/127 , H01J1/30 , C01B32/05
Abstract: PURPOSE: A high resolution field emission display is provided to accomplish large scale, suppress light leakage current of a thin film transistor, and obtain focus effect of an emitted electron beam. CONSTITUTION: A high resolution field emission display comprises an upper plate and a lower plate sealed in vacuum. Dot pixel of the lower plate includes a high voltage noncrystalline silicon thin film transistor, a bipolar field emission film(409) on a part of the drain of the thin film transistor, an interlayer insulating film(410) on the thin film transistor and the side of the bipolar field emission film(409), and an electron beam focus electrode/shading film(411) on a part of the interlayer insulating film(410) and the side of the bipolar field emission film(409). The thin film transistor is vertically overlapped with the electron beam focus electrode/shading film(411). Dot pixel of the upper plate includes a transparent electrode(422), and R, G, B phosphor(423).
Abstract translation: 目的：提供高分辨率场致发射显示器，以实现大规模，抑制薄膜晶体管的漏光电流，并获得发射电子束的聚焦效果。 构成：高分辨率场致发射显示器包括在真空中密封的上板和下板。 下板的点像素包括高压非晶硅薄膜晶体管，在薄膜晶体管的漏极的一部分上的双极场致发射膜（409），薄膜晶体管上的层间绝缘膜（410）和 双极场致发射膜（409）的一侧，以及位于层间绝缘膜（410）的一部分和双极场致发射膜（409）侧的电子束聚焦电极/遮光膜（411）。 薄膜晶体管与电子束聚焦电极/遮光膜垂直重叠（411）。 上板的点像素包括透明电极（422）和R，G，B荧光体（423）。
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公开(公告)号：KR1020010011918A
公开(公告)日：2001-02-15
申请号：KR1019990031512
申请日：1999-07-31
Applicant: 한국전자통신연구원
IPC: H01J1/30
Abstract: PURPOSE: An FED(field emission device) and a producing method thereof are provided to improve stability and uniformity of electron emitting characteristic while repressing damage on device caused by over current. CONSTITUTION: A thin film for a cathode electrode(42) and a first silicon film(45) having relatively low combining density are formed on an insulating substrate(41). A second silicon film(48) having relatively high combing density is formed on the first silicon film. A mask of a disk shape is formed. Second/first silicon films are isotropic/anisotropic etched to form in cut cone/cylinder shapes. The silicon films are isotropic etched to form the second silicon film as a cone shaped tip. A gate insulating film(46) and a gate electrode(47) are formed around the silicon films.
Abstract translation: 目的：提供FED（场致发射器件）及其制造方法，以提高电流发射特性的稳定性和均匀性，同时抑制由过电流引起的器件损坏。 构成：在绝缘基板（41）上形成用于阴极电极（42）的薄膜和具有较低组合密度的第一硅膜（45）。 在第一硅膜上形成具有较高梳理密度的第二硅膜（48）。 形成盘形掩模。 第二/第一硅膜是各向同性/各向异性蚀刻形成切圆锥/圆柱形。 硅膜是各向同性的蚀刻，以形成第二硅膜作为锥形尖端。 在硅膜周围形成栅极绝缘膜（46）和栅电极（47）。
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公开(公告)号：KR1020000034644A
公开(公告)日：2000-06-26
申请号：KR1019980052018
申请日：1998-11-30
Applicant: 한국전자통신연구원
IPC: H01J31/15
CPC classification number: G09G3/22 , G09G2300/0842
Abstract: PURPOSE: A field emission display device is provided to simplify the vacuum packaging, and to produce a large panel in a cheaper way by way of using glass instead of silicon wafer. CONSTITUTION: A field emission display device includes a lower plate, a field emitter array(20), a control thin transistor(30), and an addressing thin transistor(40). The field emission display device includes a vacuum packaged upper and lower plates parallel to each other. The lower plate includes a field emitter array(20) formed on the insulation board(10). A drain of the control thin transistor(30) is coupled with an emitter electrode of the field emitter array(20). A drain of the addressing thin transistor(40) is coupled with the gate electrode of the control thin transistor. Pixels including the array and the transistors are arranged in a matrix form.
Abstract translation: 目的：提供场致发射显示装置，以简化真空包装，并通过使用玻璃代替硅晶片，以较便宜的方式生产大面板。 构成：场致发射显示装置包括下板，场发射极阵列（20），控制薄晶体管（30）和寻址薄晶体管（40）。 场致发射显示装置包括彼此平行的真空封装的上板和下板。 下板包括形成在绝缘板（10）上的场发射极阵列（20）。 控制薄晶体管（30）的漏极与场致发射极阵列（20）的发射极耦合。 寻址薄晶体管（40）的漏极与控制薄晶体管的栅电极耦合。 包括阵列和晶体管的像素以矩阵形式排列。
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公开(公告)号：KR1020000007982A
公开(公告)日：2000-02-07
申请号：KR1019980027617
申请日：1998-07-09
Applicant: 한국전자통신연구원
IPC: H01J1/30
Abstract: PURPOSE: The field emission display is provided to solve a voltage-down problem by supplying voltage to groups of each pixel separately. CONSTITUTION: In the field emission display including a fluorescent plate, a first voltage supplier for driving an electron emission plate and a second voltage supplier for driving the fluorescent plate, the fluorescent plate is comprising; conducting films formed at selected location of a glass-supporter; and a three-primary-colored fluorescent material coated on the top of the each conducting film, in which the fluorescent materials having the same color is connected in series each other, and is arranged in order of red-green-blue-blue-green-red.
Abstract translation: 目的：提供场发射显示，以分别向每个像素的组提供电压来解决电压降低问题。 构成：在包括荧光板的场致发射显示器，用于驱动电子发射板的第一电压供应器和用于驱动荧光板的第二电压供应器中，荧光板包括： 形成在玻璃支撑体的选定位置的导电膜; 并且涂布在每个导电膜的顶部上的三原色荧光材料，其中具有相同颜色的荧光材料彼此串联连接，并且按照红 - 绿 - 蓝 - 蓝 - 绿 -红。
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