公开(公告)号：JP2001188346A

公开(公告)日：2001-07-10

申请号：JP2000089903

申请日：2000-03-28

Applicant: JSR CORP

Inventor： DOUKI KATSUJI ,  IWAZAWA HARUO ,  SOYANO AKIMASA ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F20/28 ,  C08F32/02 ,  C08F32/08 ,  C08K5/00 ,  C08L101/06 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition having high transparency to radiation as a chemical amplification type resist, excellent in basic physical properties as a resist such as dry etching resistance, sensitivity, resolution and pattern shape, not causing development defects in microfabrication and capable of producing a semiconductor device in a high yield. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or slightly alkali-soluble acid-dissociable group-containing resin having a skeleton of formula 1 preferably as a group of formula 2-1 or 2-2 and convertible to an alkali-soluble resin when the acid-dissociable group is dissociated and (B) a radiation sensitive acid generating agent. The component A is typified by a copolymer comprising repeating units of formula 3.

公开(公告)号：JPH11265067A

公开(公告)日：1999-09-28

申请号：JP27068598

申请日：1998-09-25

Applicant: JSR CORP

Inventor： SUWA MITSUFUMI ,  IWAZAWA HARUO ,  YAMAMOTO MASASHI ,  KAJITA TORU

IPC: G03F7/004 ,  C08L35/00 ,  C08L45/00 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain a radiation sensitive resin composition having high transparency to radiation and sufficient dry etching resistance and superior resolution and superior balance of characteristics by incorporating a specified copolymer and a radiation sensitive acid generator. SOLUTION: The radiation sensitive resin composition contains a radiation sensitive acid generator and a copolymer having (a) repeating units I each represented by formula I, or the repeating units I represented by formula I and repeating units II each represented by formula II, and (b) a copolymer having repeating units III represented by formula III obtained by cleaving the C=C double bonds of a monomer having >=2 polymerizable C=C double bonds, and a divalent group to be decomposed by action of an acid and having a structure of the double bonds combined with each other through the divalent group. In formula I, each of A and B is an H atom or a and R is a 1-5C alkyl group.

公开(公告)号：JPH11249310A

公开(公告)日：1999-09-17

申请号：JP6607498

申请日：1998-03-03

Applicant: JSR CORP

Inventor： SUWA MITSUFUMI ,  IWAZAWA HARUO ,  YAMAMOTO MASASHI ,  KAJITA TORU

IPC: H01L21/027 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To obtain a radiation sensitive resin compsn. excellent particularly in shelf stability, transparency to radiation, resolution and dry etching resistance as a chemical amplification type resist and excellent also in sensitivity, developability, pattern shape, etc. SOLUTION: The radiation sensitive resin compsn. contains an alkali-insoluble or slightly alkali-soluble resin having functional, groups represented by the formula and a radiation sensitive acid generating agent. In the formula, R -R are each H, 1-6C linear or branched alkyl or 5- to 8-membered cycloalkyl, R and R may bond to each other to form 5- to 8-membered cycloalkyl or R and R may bond to each other to form 5- to 8-membered cycloalkyl and (n) is an integer of 0-3.

公开(公告)号：JPH11218924A

公开(公告)日：1999-08-10

申请号：JP3241298

申请日：1998-01-30

Applicant: JSR CORP

Inventor： SUWA MITSUFUMI ,  YAMAMOTO MASASHI ,  KAJITA TORU ,  IWAZAWA HARUO

IPC: G03F7/039

Abstract: PROBLEM TO BE SOLVED: To provide the radiation sensitive resin composition superior in storage stability and high in transmittance to radiation as a chemically amplifiable resist, nevertheless, superior in dry etching resistance, sensitivity, resolution, and pattern profiles. SOLUTION: This radiation sensitive resin composition contains (A) an alkali- insoluble or hardly soluble resin having an acid-dissociable group represented by the formula, and (B) a radiation sensitive acid generator. In the formula, each of R and R is, independently, an H atom or a1-6C straight or branched or cyclic alkyl group, or may combine with each other to form a 3- or 6-membered cyclic alkyl group; and R is a 1-6C straight or branched or cyclic alkyl group.

公开(公告)号：JPH10254140A

公开(公告)日：1998-09-25

申请号：JP7471897

申请日：1997-03-12

Applicant: JSR CORP

Inventor： SUWA MITSUFUMI ,  IWAZAWA HARUO ,  KAJITA TORU ,  IWANAGA SHINICHIRO

IPC: G03F7/039 ,  C08L35/00 ,  C08L45/00 ,  C08L65/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain a radiation sensitive resin compsn. excellent especially in contact hole resolution as a chemical amplification type resist and excellent also in radiation transmitting property, dry etching resistance, pattern shape, sensitivity, resolution, etc. SOLUTION: This radiation sensitive resin compsn. contains a resin (A) having an alicyclic skeleton in the principal chain and/or a side chain, a resin (B1) having >=60%/μm transmissivity to radiation of 100-300nm wavelength or a compd. (B2) having a mol.wt. of and R is H or an acid-cleavable group, Z is a group having a cyclic hydrocarbon structure in which the total number of ring forming carbon atoms is 7-25, 0 =1.

公开(公告)号：JPH10147561A

公开(公告)日：1998-06-02

申请号：JP34700597

申请日：1997-12-01

Applicant: JSR CORP

Inventor： KAJITA TORU ,  MIURA TAKAO ,  ISAMOTO YOSHITSUGU ,  OKUDA CHOZO

IPC: G03F7/022 ,  C07C247/14 ,  C07C315/04 ,  C07C317/14

Abstract: PROBLEM TO BE SOLVED: To obtain the subject compound useful as a resist for forming highly integrated circuits by esterifying a specific hydroxy compound with a 1,2- naphthoquinone diazide sulfonyl halide. SOLUTION: The method for producing a compound of formula II useful for radiation-sensitive resin compositions comprises esterifying a hydroxy compound of formula I [R -R are each a (substituted) alkyl, a (substituted) aryl, OH; R , R are each H, a (substituted) alkyl; (a), (b), (d) are each an integer of 0-5; (c) is an integer of 0-4] with a 1,2-naphthoquinone diazide sulfonyl halide in the presence of triethylamine (in an average condensation degree of usually 100%, preferably

公开(公告)号：JP2001290274A

公开(公告)日：2001-10-19

申请号：JP2000107183

申请日：2000-04-07

Applicant: JSR CORP

Inventor： DOUKI KATSUJI ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F32/00 ,  C08F220/00 ,  C08F222/06 ,  C08K5/00 ,  C08K5/092 ,  C08K5/12 ,  C08L33/00 ,  C08L35/00 ,  C08L45/00 ,  C08L101/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition excellent particularly in pattern shape as a chemical amplification type resist and excellent also in balance of characteristics including sensitivity and resolution. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or slightly alkali-soluble acid dissociable group-containing resin which is made alkali-soluble when the acid dissociable group is dissociated, (B) a radiation sensitive acid generating agent and (C) a compound of formula (l) [where R1 and R2 are each H, an optionally substituted 1-20C alkyl or -CH2 COOR3 (R3 is a 1-18C alkyl)].

公开(公告)号：JP2001147531A

公开(公告)日：2001-05-29

申请号：JP32809199

申请日：1999-11-18

Applicant: JSR CORP

Inventor： DOUKI KATSUJI ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU

IPC: H01L21/027 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition excellent in dry etching resistance, sensitivity, resolution, etc., as a chemical amplification type resist, capable of avoiding a change of the line width of a resist pattern due to a change of the time elapsed from exposure to post-exposure heating and having superior process stability. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or slightly alkali-soluble acid dissociable group-containing resin comprising a copolymer of a norbornene derivative typified by 8- hydroxymethyltetracyclo [4.4.0.12,5.17,10]dodec-3-ene, itaconic anhydride and a (meth)acrylic acid derivative typified by a compound of formula 1 or 2 and (B) a radiation sensitive acid generating agent. The resin A is made alkali- soluble when the acid dissociable group is dissociated.

公开(公告)号：JP2001109158A

公开(公告)日：2001-04-20

申请号：JP29150799

申请日：1999-10-13

Applicant: JSR CORP

Inventor： DOUKI KATSUJI ,  MURATA KIYOSHI ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU

IPC: H01L21/027 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To obtain a radiation sensitive resin composition having high transparency to radiation as a chemical amplification type resist, excellent in basic physical properties as a resist such as dry etching resistance, sensitivity, resolution and pattern shape, causing no development defects in microfabrication and capable of producing a semiconductor device in a high yield. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or hardly alkali-soluble acid-dissociable group-containing resin typified by 8-hydroxymethyltetracyclo[4.4.0.12,5.17,10]dodeca-3-ene/maleic anhydride/t-butyl (meth)acrylate copolymer and (B) a radiation sensitive acid generating agent. The resin A is made alkali-soluble when the acid-dissociable group is dissociated.

公开(公告)号：JPH10254139A

公开(公告)日：1998-09-25

申请号：JP7471797

申请日：1997-03-12

Applicant: JSR CORP

Inventor： SUWA MITSUFUMI ,  IWAZAWA HARUO ,  KAJITA TORU ,  IWANAGA SHINICHIRO

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain a resist pattern excellent in radiation transmitting property and dry etching resistance by incorporating a specified resin, a radiation sensitive acid producing agent and a solvent mixture of straight chain ketone with cyclic ketone, etc. SOLUTION: This radiation sensitive resin compsn. contains an alkali-insoluble or slightly alkali-soluble resin having an alicyclic skeleton in the principal chain and/or a side chain, contg. acid-cleavable groups and convertible into an alkali-soluble resin when the groups are cleaved, a radiation sensitive acid generating agent that produces an acid when irradiated and a solvent mixture of straight chain ketone with at least one selected from among cyclic ketone, propylene glycol monoalkyl ether acetate and alkyl 2-hydroxypropionate. A resist pattern excellent in uniformity in film thickness, adhesiveness to the substrate, sensitivity, resolution, etc., can be formed.