公开(公告)号：CA1328242C

公开(公告)日：1994-04-05

申请号：CA567014

申请日：1988-05-17

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： FUJITA NOBUHIKO ,  ITOZAKI HIDEO ,  TANAKA SABURO ,  FUJIMORI NAOJI ,  IMAI TAKAHIRO ,  HARADA KEIZO ,  YOSHIDA NORIYUKI ,  TAKANO SATOSHI ,  MIYAZAKI KENJI ,  HAYASHI NORIKI ,  YAZU SHUJI ,  JODAI TETSUJI

IPC: C23C14/22 ,  C01B13/14 ,  C01G1/00 ,  C04B41/80 ,  C23C14/58 ,  H01B12/00 ,  H01B13/00 ,  H01L21/3205 ,  H01L23/52 ,  H01L39/24

Abstract: A method for producing a superconducting circuit pattern involves depositing onto a substrate, a thin film layer of a compound oxide which does not initially exhibit satisfactory superconducting properties at 77.degree. K., but which can be changed to become superconducting at that temperature by oxygen ion beam irradiation. A focused oxygen ion beam is directed onto predetermined areas in the form of a circuit pattern on the thin film layer to convert the predetermined areas to a superconducting compound oxide.

公开(公告)号：EP2226413A4

公开(公告)日：2011-05-11

申请号：EP07860225

申请日：2007-12-26

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： UEDA AKIHIKO ,  MEGURO KIICHI ,  YAMAMOTO YOSHIYUKI ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO

IPC: C30B29/04 ,  C30B25/18 ,  C30B25/20

CPC classification number: C30B29/04 ,  C30B25/02 ,  C30B25/105 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/24355 ,  Y10T428/30

公开(公告)号：EP2034504A4

公开(公告)日：2010-08-18

申请号：EP07767687

申请日：2007-06-27

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAMOTO YOSHIYUKI ,  UEDA AKIHIKO ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO

IPC: H01J1/304 ,  H01J37/073 ,  H01L21/027

CPC classification number: H01J1/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26

公开(公告)号：EP1892740A4

公开(公告)日：2010-05-26

申请号：EP06757402

申请日：2006-06-19

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： UEDA AKIHIKO ,  YAMAMOTO YOSHIYUKI ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO

IPC: H01J1/15 ,  H01J37/06 ,  H01J37/305

CPC classification number: H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

公开(公告)号：EP1670018A4

公开(公告)日：2010-01-06

申请号：EP04788446

申请日：2004-09-29

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TATSUMI NATSUO ,  NAMBA AKIHIKO ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO

IPC: H01J9/02 ,  H01J1/304 ,  H01J29/04

CPC classification number: H01J1/3044 ,  H01J1/304 ,  H01J9/025 ,  H01J29/04 ,  H01J2201/30457

公开(公告)号：EP1649955A4

公开(公告)日：2009-10-21

申请号：EP03772725

申请日：2003-11-12

Applicant: ALMT CORP ,  SUMITOMO ELECTRIC INDUSTRIES

Inventor： KAZAHAYA KATSUO ,  KAWAI SHIGETAKA ,  MATSUMOTO YASUSHI ,  ISHIBASHI KEIJI ,  IMAI TAKAHIRO

IPC: B23B27/14 ,  B23B27/20 ,  B23C5/16 ,  B23G5/06 ,  B23P15/28 ,  C23C16/02 ,  C23C16/27

CPC classification number: C23C16/27 ,  B23G5/06 ,  B23G2200/26 ,  B23G2225/08 ,  B23G2225/16 ,  B23G2225/28 ,  C23C16/0218 ,  Y10T428/30

公开(公告)号：EP1577425A4

公开(公告)日：2007-02-28

申请号：EP03781010

申请日：2003-12-22

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAMBA AKIHIKO ,  IMAI TAKAHIRO ,  TAKEUCHI HISAO

IPC: C30B29/04 ,  C23C16/27 ,  C23C16/448 ,  C23C16/48 ,  C30B25/10 ,  H01L21/205 ,  H01L21/22

CPC classification number: C23C16/448 ,  C23C16/27 ,  C23C16/278 ,  C23C16/482 ,  C30B25/105 ,  C30B29/04 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02634

Abstract: Concerns lithium-doped diamond: Low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and a method of manufacturing such diamond are provided. Low-resistivity n-type semiconductor diamond containing 10 17 cm -3 or more of lithium atoms and nitrogen atoms together, in which are respectively doped lithium atoms into carbon-atom interstitial lattice sites, and nitrogen atoms into carbon-atom substitutional sites, with the lithium and the nitrogen holding arrangements that neighbor each other. To obtain low-resistivity n-type semiconductor diamond, in a method for the vapor synthesis of diamond, photodissociating source materials by photoexcitation utilizing vacuum ultraviolet light and irradiating a lithium source material with an excimer laser to scatter and supply lithium atoms enables the diamond to be produced.

公开(公告)号：EP1603242A4

公开(公告)日：2006-04-19

申请号：EP04717761

申请日：2004-03-05

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TATSUMI NATSUO ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO ,  NAKAHARA TSUNEO

IPC: H01J19/24 ,  H01J21/20 ,  H03K19/06 ,  H03K19/08 ,  H03K19/20 ,  H01J21/10

CPC classification number: H03K19/06 ,  H01J19/24 ,  H01J21/20 ,  H03K19/08

Abstract: A logical operation element operative at high speed and integratable at a high degree of integration. A logical operation circuit is also disclosed. The logical operation circuit comprises a NOR element and a NAND element as logical operation elements. The Nor element has a structure in which the anodes of first and second field-emission micro electron emitters are brought to the same potential, and signal voltages of two or more systems are inputted into the gates electrodes corresponding to the emitters and in which when an input signal of high potential is inputted into either of the two systems, electrons are emitted from the emitter, and the potential of the anode is lowered. The NAND element has a structure in which the cathodes of first and second field-emission micro electron emitters are connected in series, signal voltages of two systems are applied to the gate electrodes corresponding to the first and second emitters, and the anode potential of the second emitter is lowered when both input signals are at high potentials.

公开(公告)号：EP2266633A4

公开(公告)日：2011-10-05

申请号：EP09730990

申请日：2009-04-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MAJIMA MASATOSHI ,  INAZAWA SHINJI ,  NITTA KOJI ,  YAMAKAWA MASAHIRO ,  SUGIHARA TAKAYASU ,  TAKEDA YASUHIRO ,  AKAHANE YOSHIHIRO ,  IMAI TAKAHIRO

IPC: A61L9/00

CPC classification number: B01D53/326 ,  A61L9/012 ,  A61L9/014 ,  A61L9/16 ,  A61L2209/213 ,  A61L2209/22 ,  B01D53/32 ,  B01D53/8668 ,  B01D53/88 ,  B01D61/422 ,  B01D69/10 ,  B01D69/12 ,  B01D69/145 ,  B01D71/36 ,  B01D2251/11 ,  B01D2255/102 ,  B01D2255/9202 ,  B01D2257/7027 ,  B01D2257/90 ,  B01J35/0033

公开(公告)号：EP1930747A4

公开(公告)日：2010-11-17

申请号：EP06783038

申请日：2006-08-25

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： AKAHANE YOSHIHIRO ,  ODA KAZUHIKO ,  MATSUURA TAKASHI ,  USHIRO TOSHIHIKO ,  IMAI TAKAHIRO

IPC: G02B5/18 ,  G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G03F7/00

CPC classification number: G02B1/00 ,  G02B5/1857 ,  G02B6/1221 ,  Y10T428/24942