Abstract:
본원에 개시된 실시예들은 일반적으로 개별적인 더 큰 MEMS 디바이스 또는 디지털 가변 커패시터의 기능을 대체하기 위하여 다수의 작은 MEMS 디바이스들을 사용하는 것을 포함한다. 다수의 더 작은 MEMS 디바이스들은 더 큰 디바이스와 동일한 기능을 수행하지만, 더 작은 크기 때문에, 이들은 CMOS(complementary metal oxide semiconductor) 호환가능한 프로세스들을 사용하여 캐비티 내에 캡슐화될 수 있다. 다수의 더 작은 디바이스에 걸친 신호 평균화는 더 작은 디바이스들의 어레이의 정확도가 더 큰 디바이스와 등가로 되는 것을 허용한다. 프로세스는 관성 응답의 통합된 아날로그 대 디지털 변환을 갖는 MEMS 기반 가속도계 스위치 어레이의 이용을 고려하는 것에 의해 예시된다. 또한, 프로세스는 MEMS 디바이스들이 디지털 가변 커패시터로서 병렬로 동작하는 MEMS 기반 디바이스 구조물의 이용을 고려하는 것에 의해 예시된다.
Abstract:
MEMS 디바이스는 백플레이트 전극 및 백플레이트 전극으로부터 이격하여 배치된 멤브레인을 포함한다. 멤브레인은 이동부와 고정부를 포함한다. 백플레이트 전극과 멤브레인은, 백플레이트 전극과 멤브레인의 고정부의 중첩 영역이 최대 중첩보다 작게 되도록 배치된다.
Abstract:
절연층의평탄성의변동에의해생긴절연파괴강도의변동을저감한전기기계변환장치의제조방법을제공한다. 전기기계변환장치의제조방법에있어서, 제1 기판위에제1 절연층을형성하고, 제1 절연층의일부를제거해서차단벽을형성하고, 제1 절연층의일부가제거된제1 기판의영역위에제2 절연층을형성한다. 다음에, 제2 기판을차단벽위에접합해서틈을형성하고, 제2 기판으로부터, 틈을거쳐서제2 절연층과대향하는진동막을형성한다. 차단벽을형성하는공정에서는, 제1 기판에수직한방향에있어서틈측의높이가중앙부의높이보다도낮아진다.
Abstract:
PURPOSE: A manufacturing method of an electronic machine converting device is provided to reduce a change of the flatness of an insulating layer in the bottom of a gap without a process for removing a protrusion on a blocking wall. CONSTITUTION: A first insulating layer(2) is formed on a first substrate and a part of the first insulating layer is removed to form a blocking wall(3). A second insulating layer(10) is formed on an area of the first substrate. The second substrate is adhered to the blocking wall to form a gap. A vibration film facing the second insulating layer is formed from the second substrate. The height of the gap of the blocking wall is lower than the height of a central part.
Abstract:
The present subject matter relates to devices, systems, and methods for isolation of electrostatic actuators in MEMS devices to reduce or minimize dielectric charging. A tunable component can include a fixed actuator electrode positioned on a substrate, a movable actuator electrode carried on a movable component that is suspended over the substrate, one or more isolation bumps positioned between the fixed actuator electrode and the movable actuator electrode, and a fixed isolation landing that is isolated within a portion of the fixed actuator electrode that is at, near, and/or substantially aligned with each of the one or more isolation bumps. In this arrangement, the movable actuator electrode can be selectively movable toward the fixed actuator electrode, but the one or more isolation bumps can prevent contact between the fixed and movable actuator electrodes, and the fixed isolation landing can inhibit the development of an electric field in the isolation bump.
Abstract:
The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.
Abstract:
The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.
Abstract:
There are included a semiconductor substrate (10), a redistribution layer (50) provided on a main surface of the semiconductor substrate (10), and a plurality of terminal electrodes (PE) including a first input/output terminal, a second input/output terminal, a ground terminal and a control voltage application terminal, where a variable capacitance element section (VC) that is a ferroelectric thin film is formed to the redistribution layer (50), the variable capacitance element section (VC) being formed from a pair of capacitor electrodes connected to the first input/output terminal and the second input/output terminal, respectively, and a ferroelectric thin film disposed between the pair of capacitor electrodes, and where an ESD protection element (ESDP1, ESDP2) connected between the first input/output terminal or the second input/output terminal and the ground terminal (GND) is formed on the main surface of the semiconductor substrate (10).
Abstract:
The present subject matter relates to devices, systems, and methods for isolation of electrostatic actuators in MEMS devices to reduce or minimize dielectric charging. A tunable component can include a fixed actuator electrode positioned on a substrate, a movable actuator electrode carried on a movable component that is suspended over the substrate, one or more isolation bumps positioned between the fixed actuator electrode and the movable actuator electrode, and a fixed isolation landing that is isolated within a portion of the fixed actuator electrode that is at, near, and/or substantially aligned with each of the one or more isolation bumps. In this arrangement, the movable actuator electrode can be selectively movable toward the fixed actuator electrode, but the one or more isolation bumps can prevent contact between the fixed and movable actuator electrodes, and the fixed isolation landing can inhibit the development of an electric field in the isolation bump.
Abstract:
Devices and methods of operating partitioned actuator plates to obtain a desirable shape of a movable component of a micro-electro-mechanical system (MEMS) device. The subject matter described herein can in some embodiments include a micro-electro-mechanical system (MEMS) device including a plurality of actuation electrodes attached to a first surface, where each of the one or more actuation electrode being independently controllable, and a movable component spaced apart from the first surface and movable with respect to the first surface. Where the movable component further includes one or more movable actuation electrodes spaced apart from the plurality of fixed actuation electrodes.