Abstract:
Ein Infrarotlichtsensor für einen Infrarotlichtdetektor (1) weist einen Trägermembranabschnitt (2) sowie mindestens zwei Sensorchips (7 bis 10), die nebeneinanderliegend an dem Trägermembranabschnitt (2) befestigt sind und jeweils ein aus pyroelektrisch sensitivem Material hergestelltes Schichtelement (11) aufweisen, das von einer Basiselektrode (12) und einer Kopfelektrode (13) elektrisch kontaktiert und derart eingerichtet ist, dass zwischen der Kopfelektrode (13) und der Basiselektrode (12) eines jeden Schichtelements (11) jeweils eine Differenzspannung anliegt, wenn die Schichtelemente (11) mit Infrarotlicht bestrahlt sind, und jeweils für zwei benachbart angeordnete Sensorchips (7 bis 10) eine Kopplungsleitung (14 bis 16) auf, mit der die Kopfelektrode (13) des einen Sensorchips (7 bis 9) und die Basiselektrode (12) des anderen Sensorchips (8 bis 10) elektrisch leitend miteinander gekoppelt sind, so dass die Schichtelemente (11) der Sensorchips (7 bis 10) in einer Reihenschaltung geschaltet sind, die an ihrem einen Ende eine der Basiselektroden (17) und an ihrem anderen Ende eine der Kopfelektroden (18) aufweist, an denen eine Gesamtdifferenzspannung der Reihenschaltung als Summe der einzelnen Differenzspannungen der Schichtelemente (11) abgreifbar ist.
Abstract:
In a device for the detection of thermal radiation and a method for production of such a device, a stack is formed with a detector support having a detector element for converting the thermal radiation into an electric signal, a circuit support with a read-out circuit for reading out the electrical signal and a cover to shield the detector element. The detector support and the cover are so arranged that a first stack cavity is formed between the detector element and the cover and a second stack cavity is formed between detector support and the circuit support. The first stack cavity and/or the second stack cavity is evacuated and hermetically sealed. In the manufacturing operation, functionalized silicon-substrates are stacked upon one another, firmly bonded together and subsequently sub-divided. Preferably, the detector elements are pyro-electric detector elements. The device finds application in motion detectors, presence reporters and thermal-image cameras.
Abstract:
The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450°C and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.3, and the deposition rate of lead is selected to be sufficiently low, depending on the substrate temperature and the total deposition rate of lead, zirconium, and titanium, for an X-ray diffractometer graph of the 111-oriented lead zirconate titanate to have a significant peak value (19) in a diffraction angle range from 33 to 35.5°; and completing the thin film.
Abstract:
The invention relates to an infrared light detector having a sensor chip (4), which comprises a thin-film element (5) made from a pyroelectrically sensitive material, having an electrical insulator (27), at least one electronic component (17, 18) having a thin-film design, which forms part of a readout electronics unit, and a thin-film membrane (2), on which the sensor chip (4) and the electronic component (17, 18) are mounted side by side in an integrated manner such that the electronic component (17, 18) is electrically conductively coupled to the thin-film element (5). A signal amplifier (22), with which, in co-operation with the electronic component (17, 18), an electrical signal emitted from the sensor chip (4) can be amplified, can be connected to the electronic component (17, 18).
Abstract:
The invention relates to a device (1) for detecting thermal radiation, comprising at least one stack (10) having at least one detector carrier (11) with at least one thermal detector element (111) for converting the thermal radiation to an electrical signal, at least one circuit carrier (12) having at least one readout circuit (121, 122) for reading out the electrical signal, and at least one cover (13) for covering the detector element. The detector carrier and the cover are arranged on each other in such a manner that at least one first stack cavity (14) of the stack is produced between the detector element of the detector carrier and the cover, said cavity being delimited by the detector carrier and the cover. The circuit carrier and the detector carrier are arranged on each other in such a manner that at least one second stack cavity (15) of the stack is produced between the detector carrier and the circuit carrier, said cavity being delimited by the circuit carrier and the detector carrier. The first stack cavity and/or the second stack cavity are or can be evacuated. The invention also relates to a method for producing said device. The detector carrier, circuit carrier and the cover are preferably produced from silicon. The production is preferably carried out on the wafer level: Functionalized silicon substrates are stacked, firmly interconnected and then subdivided. The detector elements are preferably pyroelectric detector elements. The device according to the invention is used in motion detectors, presence detectors and thermal imaging cameras.
Abstract:
The invention relates to a device for detecting thermal radiation, comprising at least one membrane on which at least one thermal detector element for converting the thermal radiation to an electrical signal is arranged, and at least one circuit carrier for carrying the membrane and for carrying at least one readout circuit for reading out the electrical signal, the detector element and the readout circuit being electrically interconnected through the membrane through an electrical via. The invention also relates to a method for producing said device by way of the following process steps: a) providing the membrane having the detector element and at least one electrical via and providing the circuit carrier, and b) uniting the membrane and the circuit carrier in such a manner that the detector element and the readout circuit are electrically interconnected through the membrane through an electrical via. The production is preferably carried out on the wafer level: Functionalized silicon substrates are stacked, firmly interconnected and then subdivided. The detector elements are preferably pyroelectric detector elements. The device according to the invention is used in motion detectors, presence detectors and thermal imaging cameras.
Abstract:
Die Erfindung betrifft ein Verfahren zum Herstellen eines Mikrosystems, mit den Schritten: Bereitstellen eines Substrats (2) aus Aluminiumoxid; Herstellen einer Dünnschicht (6)auf dem Substrat (2)durch Abscheiden von Bleizirkonattitanat auf das Substrat (2) mit einem thermischen Abscheideverfahren derart, dass das Bleizirkonattitanat in der Dünnschicht (6) selbstpolarisiert ist und vorwiegend in der rhomboedrischen Phase vorliegt; Abkühlen des Substrats (2)mit der Dünnschicht (6).