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公开(公告)号：KR1020070072779A
公开(公告)日：2007-07-05
申请号：KR1020060000265
申请日：2006-01-02
Applicant: 삼성전자주식회사
IPC: H01L27/115
CPC classification number: H01L45/06 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1266
Abstract: A phase change memory device including multi-bit cells and a method for programming the same are provided to improve a degree of integration thereof by storing information of two bits and more in unit cells. A phase change material layer(17) is provided as an information storage element. A first electrode(15) comes in contact with a part of a first surface of the phase change material layer in order to obtain first contact resistance. The first electrode is used as a heater to cause a phase change of the phase change material layer adjacent thereto. A second electrode(19) comes in contact with a part of a second surface of the phase change material layer in order to obtain second contact resistance different from the first contact resistance. The second electrode is used as a heater to cause the phase change of the phase change material layer adjacent thereto.
Abstract translation: 提供一种包括多位单元的相变存储器件及其编程方法，通过在单位单元中存储两位以上的信息来提高其积分度。 提供相变材料层（17）作为信息存储元件。 第一电极（15）与相变材料层的第一表面的一部分接触以获得第一接触电阻。 第一电极用作加热器以引起与其相邻的相变材料层的相变。 为了获得与第一接触电阻不同的第二接触电阻，第二电极（19）与相变材料层的第二表面的一部分接触。 第二电极用作加热器以引起与其相邻的相变材料层的相变。
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123.发明授权다수 저항 상태를 갖는 저항 메모리 요소, 저항 메모리 셀및 그 동작 방법 그리고 상기 저항 메모리 요소를 적용한데이터 처리 시스템 有权다수저항상태를갖는저항메모리요소，저항메모리셀및그동작방법그리고상기저항메모리요소를를용한데이터처리시스템
公开(公告)号：KR100684908B1
公开(公告)日：2007-02-22
申请号：KR1020060002300
申请日：2006-01-09
Applicant: 삼성전자주식회사
IPC: G11C11/15
Abstract: A resistive memory element having multi-resistive states, a resistive memory cell and an operation method thereof, and a data processing system using the resistive memory element are provided to simplify a driving circuit of a memory device and to reduce a driving voltage, by making driving signals, such as a reset voltage, a set current and a read voltage, have the same polarity. In a resistive memory element indicating resistive states of numerous levels, the resistive memory element includes two-component metal oxide. The two-component metal oxide is changed to at least one middle resistive state having lower resistance than a high resistive state and a low resistive state having lower resistance than the middle resistive state, from the high resistive state, by applying a current.
Abstract translation: 通过制造具有多电阻状态的电阻存储元件，电阻式存储单元及其操作方法，以及使用该电阻式存储元件的数据处理系统，以简化存储器件的驱动电路并降低驱动电压 诸如复位电压，设定电流和读取电压之类的驱动信号具有相同的极性。 在指示多个电平的电阻状态的电阻存储元件中，电阻存储元件包括双组分金属氧化物。 通过施加电流，双组分金属氧化物从高电阻状态变为具有比高电阻状态低的电阻的至少一个中间电阻状态和具有比中间电阻状态低的电阻的低电阻状态。
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Patent Agency Ranking
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公开(公告)号：KR1020060105893A
公开(公告)日：2006-10-12
申请号：KR1020050027420
申请日：2005-03-31
Applicant: 삼성전자주식회사
Inventor： 김형준
Abstract: 본 발명은 디지털 멀티미디어 방송 수신이 가능한 이동 통신 단말이 표시 장치의 표시화면 크기에 따라 디지털 멀티미디어 방송 영상을 적응적으로 디스플레이하기 위해 표시화면의 가로 길이와 세로 길이 비율에 따라 DMB 영상을 90°회전하여 디스플레이하기 때문에, DMB 영상의 왜곡을 줄일 수 있고, 사용자 또한, 양질이 DMB를 시청할 수 있다.
디지털 멀티미디어 방송 영상, 이동 통신 단말, 표시화면 -
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