Abstract:
본 발명은 화합물 반도체의 제조장치 및 이를 이용한 화합물 반도체의 제조방법에 관한 것으로, 상세하게는 증발원이 가열되지 않는 가열 대기영역 및 증발원이 가열될 수 있는 가열영역을 포함하는 반응 챔버; 상기 반응 챔버 내에 구비되되, 1종 이상의 VIA족 원소를 포함하는 증발원이 담지되는 증발원 담지부; 상기 반응 챔버 내에서 상기 증발원 담지부와 이격되어 구비되되, IB, IIB, IIIA, VA 및 IVA족 원소로 이루어진 군으로부터 선택되는 1종 이상의 원소를 포함하는 시편이 표면에 형성된 기판; 상기 증발원 담지부와 이격되어 구비되되, 상기 대기영역은 가열하지 않고, 상기 기판을 가열할 수 있도록 상기 가열영역으로 구비되는 가열부; 상기 증발원 담지부에 연결되어 상기 증발원 담지부를 상기 대기영역에서 상기 가열영역으로 이송할 수 있는 이송장치; 상기 반응 챔버 내로 이송가스를 공급하는 이송가스 공급부; 및 상기 반응 챔버 내의 이송가스를 배출하는 이송가스 배출부;를 포함하는 화합물 반도체의 제조장치를 제공한다. 본 발명에 따른 화합물 반도체의 제조장치는 과량의 증발원을 시편과 함께 열처리하는 기존의 방법과 달리, VIA족 원소를 열처리 장치 내부에 순차적으로 그리고 지속적으로 공급함으로써 VIA족 원소의 기화 정도를 일정하게 제어할 수 있으며, 이에 따라 전구체의 균일한 반응을 유도할 수 있는 효과가 있다.
Abstract:
The present invention relates to a method for manufacturing an optical absorption layer for a solar cell. More particularly, the present invention relates to a method for manufacturing an optical absorption layer for a solar cell which can fabricate a high quality optical absorption layer by forming a protection layer on a substrate, forming a middle layer on the protection layer, forming an electric bulb layer on the middle layer, and performing a thermal process on the middle layer. [Reference numerals] (AA) Precursor layer; (BB) VIA layer lay; (CC) Protection layer; (DD) Substrate
Abstract:
PURPOSE: A photosensitized solar cell and a manufacturing method thereof are provided to reduce manufacturing processes by forming a complex catalyst layer which functions as a reflection layer and a catalyst layer. CONSTITUTION: A photoelectrode part includes a transparent supporter (21), a transparent oxide electrode film (22), semiconductor oxide (25), and a photosensitized dye (26). The photosensitized dye generates electrons by directly absorbing light. A counter electrode part faces the photoelectrode part. The counter electrode is composed of a supporter (23), a conductive metal layer (24) for an electrode, and a complex catalyst layer (28). The complex catalyst layer is made of a mixture of a catalyst for catalyzing an oxidation-reduction reaction of an electrolyte (27) in a solar cell and metal oxide for reflecting and scattering light. The electrolyte is located between the photoelectrode part and the counter electrode part.
Abstract:
PURPOSE: A non-volatility resistance memory device is provided to secure the stable property of a thin film by using oxide semiconductor including four elements. CONSTITUTION: A lower electrode(120) is formed on a substrate. An oxide semiconductor thin film(130) including four elements is formed on the lower electrode. The oxide semiconductor thin film includes at least one metal selected among tantalum, hafnium, zirconium, titanium, vanadium, and yttrium. The oxide semiconductor thin film further includes a metal additive for electric conduction. An upper electrode(140) is formed on the oxide semiconductor thin film.
Abstract:
PURPOSE: An organic-inorganic hybrid solar cell and a manufacturing method thereof including a compound for electron transfer are provided to improve light conversion efficiency by using a functional group reacting with a hydroxyl group. CONSTITUTION: A functional group is combined with the surface of an inorganic semiconductor layer. A compound is introduced to the surface of the inorganic semiconductor layer. The compound includes the hydroxyl group and the functional group. The inorganic semiconductor layer is formed on a substrate having an electrode(S220). A dye is introduced to the inorganic semiconductor layer(S230). [Reference numerals] (S200) Form a first electrode on a first substrate; (S210) Form an inorganic semiconductor thin film; (S220) Put perylene derivative; (S230) Put dye; (S240) Form an opposite electrode on a second substrate; (S250) Inject and seal electrolyte
Abstract:
PURPOSE: A solar cell with an optical sensor to track the sun, a manufacturing method thereof, and a photovoltaic power generating system are provided to reduce manufacturing costs by including an optical sensor in a solar cell module. CONSTITUTION: A first electrode(200) is formed on a substrate. A light absorption layer(300) is formed on the first electrode. The light absorption layer and the first electrode are etched by an etching process. An etched part is formed by etching the first electrode and the light absorption layer to expose a part of the substrate. A buffer layer(400) is formed by a vacuum process and a solution process after the etching process. An optical sensor active layer(410) is formed on the etched part. An optical sensor electrode(510) is formed on the optical sensor active layer.
Abstract:
본 발명은 기판 위에 형성된 전극층 상에 용액공정을 이용하여 IB, IIB, IIIB, 또는 IVA 중 적어도 하나를 포함하는 전구체층을 증착하는 단계, 상기 전극체층 상에 VIA족 층을 증착하는 단계 및 커버플레이트를 상기 VIA족 층의 상부에 배치한 후 열처리를 통하여 I-III-VI계 또는 I-II-IV-VI계 광흡수층을 형성하는 단계를 포함한다.
Abstract:
PURPOSE: An organic dye is provided to improve flowability of an electron by accepting a functional group for preventing re-combination with other electrolyte in one electron donor and to maximize photoelectric conversion efficiency of high Jsc(short circuit photocurrent density). CONSTITUTION: An organic dye for a dye-sensitized solar cell comprises a material selected from a group consisting of a compound indicated in chemical formula 1 or 2. In chemical formula 1 and, x is a substituted or unsubstituted aromatic hydrocarbon group, Z is a substituted or unsubstituted heterocyclic group, A is a group comprising hydrogen-combinable acidic group(-COOH) as a linear or heterocyclic group. A dye-sensitized solar cell device comprises the organic dye.
Abstract:
I족 원료, II족 원료, IV족 원료, VI족 원료를 용매와 함께 혼합하여 혼합 용액을 제조하는 단계, 상기 혼합 용액을 승온 및 초음파 처리하는 단계, 및 상기 초음파 처리 단계로부터 얻어진 결과물을 건조하여 나노입자를 획득하는 단계를 포함하는 I-II-IV-VI계 반도체 나노입자의 제조방법이 제공된다.