-
公开(公告)号：KR1019960002902A
公开(公告)日：1996-01-26
申请号：KR1019940014062
申请日：1994-06-21
IPC: H01L31/00
Abstract: 본 발명은 평면형 광검출기의 제조방법에 관한 것으로서, 종래의 p형 금속전극의 칩의 전면에, n형 전극은 칩의 뒷면에 형성되어서 와이어 본딩에 의한 패키지반을 사용할 수 밖에 없는 문제점을 해결하기 위하여 본 발명에서는 MOCVD에 의한 에피층 성장공정 (a)과, 제l실리콘 질화막(43)을 마스크로 한 아연 확산공정(b)과, 인듐인 표면층(42)의 선택적 습식식각 공정(c)과, 인듐인 표면층(42)의 선택적 습식식각 공정(e)과, p형 및 n형 금속전극(46p, 46n) 형성공정 (f)과, p형 인늄칼륨비소층(41p)의 선택적 습식식각 공정(g)과, 무반사막 및 패시베이션용 제3실리콘 질화막(45) 증착후 플립 칩 본딩영역 식각공정(h)을 제공함으로써 본딩용 와이어가 없는 플립 칩 본딩 패키지에 적용할 수 있어 광검출기 모듈의 특성을 향상시킬 수 있을 뿐 아니라 대량생산에 유리하고, 고속동작에 유리한 특성을 갖는 효과가 있다.
-
公开(公告)号：KR1019950021010A
公开(公告)日：1995-07-26
申请号：KR1019930027620
申请日：1993-12-14
Applicant: 한국전자통신연구원
IPC: H01L21/265
Abstract: 본 발명은 저류주입에 의한 광도파로의 굴절율의 변화를 이용한 내부 전반사형 광스위치에 관한 것으로, 광스위치의 반사영역 부분의 코아층에 도핑을 높게하여 도파로의 손실을 증가시키지 않고 광스위치의 동작속도를 극대화 시키는 광스위치의 제조방법에 관한 것이다. 본 발명은 2회의 에피택시 결정성장과 n형의 이온주입, Zn확산 및 선택식각 등의 공정을 통하여 제조되는 부분 고도핑형 InGaAsP/InP 전류주입에 의한 내부 전반사형 광스위치이며 광스위치의 속도를 고속화하여 광교환 용량을 증가시킨다.
-
公开(公告)号：KR1019940001236B1
公开(公告)日：1994-02-18
申请号：KR1019910012522
申请日：1991-07-22
Applicant: 한국전자통신연구원
IPC: G11B7/00
Abstract: The method arrays a noncrystalized chalcogenide (7) by a constant polarized recording light (8) and for recording the data to the desired location by a lineary polarized recording light (9). The device includes a reading light source (11), a lens (12) for converting the linearly polarized light (10) into the paralleling light, a polarizing beam splitter (15) for reflecting the paralleling light, a quater wave retardation plate (14) for passing the light, a light converging lens (15), an optic recording device (16) for recording the light information, and a photo detector (17) for deciding the axis of light degrees (450).
Abstract translation: 该方法通过恒定的偏振记录光（8）排列非结晶的硫族化物（7），并通过线偏振记录光（9）将数据记录到期望的位置。 该装置包括读取光源（11），用于将线偏振光（10）转换成并列光的透镜（12），用于反射并联光的偏振分束器（15），四分之一波长相位差板（14） ），聚光透镜（15），用于记录光信息的光记录装置（16），以及用于决定光度轴（450）的光检测器（17）。
-
-
-
Patent Agency Ranking
-
-
公开(公告)号：KR100289040B1
公开(公告)日：2001-05-02
申请号：KR1019970071650
申请日：1997-12-22
IPC: G02B6/28
Abstract: PURPOSE: A bidirectional optical communication module is provided to couple a bidirectional optical device and an optical fiber effectively by integrating a receiver in a semiconductor laser for transmission as a single chip. CONSTITUTION: An integrated laser diode(10) is bonded to a substrate(31) made of a diamond or alumina material. An optical fiber core(23) and a waveguide(19) of a laser diode are aligned correspondingly so that the laser diode(10) is electrically driven and optical coupling is made maximumly. An optical fiber(20) is ground so as to be inclined, so that a pointed portion is directed to a receiver. A gap between an optical device and the optical fiber(20) is filled with medium(25) for adjusting a reflective index. A reflection matter(33) is formed perpendicularly to a waveguide direction toward a monitor photo diode(36). A received light from the optical fiber(20) is bent toward a receiver(10a) by a reflective difference between the optical fiber(20) and the optical coupling medium(25), absorbed in an optical absorption layer of the receiver(10a), and converted into a current. The current is detected by an external circuit through a p-type common electrode and an n-electrode of the receiver.
-
公开(公告)号：KR100276082B1
公开(公告)日：2001-01-15
申请号：KR1019980011463
申请日：1998-04-01
Applicant: 한국전자통신연구원
IPC: H01S5/30
Abstract: PURPOSE: A structure of a bidirectional optical device operating with a single power supply and a manufacturing method thereof are provided to reduce the number of optical components, simplify optical packing processes, minimize an optical transceiving module, reduce production costs, improve the characteristics, etc. by integrating a semiconductor laser, a photo detector, and a p-n diode vertically on a single substrate. CONSTITUTION: A bidirectional optical device comprises an n-InP semiconductor substrate(4), a plane embedded heterogeneous junction semiconductor laser structure(1) formed on the substrate, and a photo detector(3) integrated vertically in a predetermined region on the semiconductor laser structure. The semiconductor laser structure comprises an active layer(6), current block layers(8,9,10) formed on both sides of the active layer, and a p-clad layer(11) and a p-ohmic contact layer(12) formed on the current block layers. The photo detector comprises an n-InP layer(16), a photo absorbing layer(14), and a p-ohmic contact layer(17). When an electric power is applied to the optical device, p-type layers of the p-clad layer and p-ohmic contact layer and an n-type layer of the n-InP layer are shared between the semiconductor laser structure and the photo detector, so that a p-n diode is formed by which the semiconductor laser structure is forward biased and the photo detector is reverse biased.
Abstract translation: 目的：提供使用单电源工作的双向光学装置的结构及其制造方法，以减少光学部件的数量，简化光学打包过程，使光收发模块最小化，降低生产成本，提高特性等 通过在单个衬底上垂直集成半导体激光器，光电检测器和pn二极管。 构成：双向光学器件包括n-InP半导体衬底（4），形成在衬底上的平面嵌入异质结半导体激光器结构（1）和在半导体激光器上的预定区域中垂直集成的光电检测器（3） 结构体。 半导体激光器结构包括有源层（6），形成在有源层的两侧上的电流阻挡层（8,9,10）和p覆盖层（11）和p-欧姆接触层（12） 形成在当前阻挡层上。 光检测器包括n-InP层（16），光吸收层（14）和p-欧姆接触层（17）。 当向光学器件施加电力时，p型覆盖层和p欧姆接触层的p型层和n-InP层的n型层在半导体激光器结构和光电检测器之间共享 ，从而形成pn二极管，半导体激光器结构被正向偏置并且光电检测器被反向偏置。
-
公开(公告)号：KR100265858B1
公开(公告)日：2000-09-15
申请号：KR1019970064092
申请日：1997-11-28
IPC: H01S5/30
Abstract: PURPOSE: A WDM(Wave Division Multiplexing) device for integrating semiconductor laser and photodetector on a single chip is provided to miniaturize the device and improve the transmittance by integrating on a single semiconductor laser for optical data transmission and a photodetector for optical data receiving. CONSTITUTION: The WDM device includes structures of a semiconductor laser(1) and a photodetector(2) both formed on an n-type lnP substrate(7). The semiconductor laser(1) includes an n-type lnP buffer layer(8), an undoped lnGaAsP active layer(99), a p-type lnP buffer layer(17), a p-type lnP clad layer(10), and a p-type lnGaAsP resistant contact layer(11). The photodetector(2) includes a p-type lnGaAsP resistant contact layer(11), an undoped lnP etching stop layer(12), an undoped lnGaAs photo-absorption layer(13) and an n-type lnGaAsP resistant contact layer(14). Here, the laser(1) and photodetector(2) shares a p-type lnGaAsP resistant layer(11) and forms an NPN structure with the n-type lnGaAsP resistant contact layer(14), the p-type lnGaAsP resistant contact layer(11) and the n-type substrate(7).
Abstract translation: 目的：提供一种用于将半导体激光器和光电检测器集成在单个芯片上的WDM（波分复用）器件，用于通过集成在单个半导体激光器上进行光学数据传输和光学数据接收的光电检测器，使器件小型化并提高透射率。 构成：WDM器件包括形成在n型衬底（7）上的半导体激光器（1）和光电检测器（2）的结构。 半导体激光器（1）包括n型lnP缓冲层（8），未掺杂的lnGaAsP有源层（99），p型lnP缓冲层（17），p型lnP覆盖层（10）和 p型lnGaAsP电阻接触层（11）。 光电检测器（2）包括p型lnGaAsP电阻接触层（11），未掺杂的lnP蚀刻停止层（12），未掺杂的lnGaAs光吸收层（13）和n型lnGaAsP电阻接触层（14） 。 这里，激光器（1）和光电检测器（2）共享p型lnGaAsP电阻层（11）并与n型lnGaAsP电阻接触层（14）形成NPN结构，p型lnGaAsP电阻接触层 11）和n型基板（7）。
-
-
-
-
-
-
-
-
-
Search Results
164
records
(took 0.017 seconds)
