公开(公告)号：DE10329365A1

公开(公告)日：2005-02-03

申请号：DE10329365

申请日：2003-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

Abstract: Radiation-emitting semiconductor chip (1) comprises a brightness adjusting layer arranged between a connecting region (4) and an active layer and consists of an electrically insulating current blocking region (62) and an electrically conducting current passage region (61) via which the connecting region is electrically connected to a semiconductor layer sequence. A part of the electromagnetic radiation produced in the chip is produced below the connecting region and is absorbed by it. An independent claim is also included for a process for the production of a radiation-emitting semiconductor chip.

公开(公告)号：DE10261675A1

公开(公告)日：2004-07-22

申请号：DE10261675

申请日：2002-12-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  WIRTH RALPH ,  ALBRECHT TONY

IPC: H01L33/44 ,  H01L33/00

Abstract: An optoelectronic structural element has an epitaxial semiconductor layer sequence (6) with an electromagnetic radiation emitting zone and at least one electrical contact region (10) with at least one radiation permeable zinc oxide (ZnO) containing electrical contact layer (ECL), connected electrically to the outer semiconductor layer (5), where the ECL contains a waterproof material (8) for protection against moisture.

公开(公告)号：DE10224219A1

公开(公告)日：2003-12-18

申请号：DE10224219

申请日：2002-05-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH

IPC: H01L33/08 ,  H01L33/22 ,  H01L33/00

Abstract: The thin film stack (30) includes a region (50) generating light by recombination of charge carriers, producing photons. A further region (54) couples light out from the component. These regions are separated at least partially, in the plane of the stack.

公开(公告)号：DE10031821A1

公开(公告)日：2002-01-17

申请号：DE10031821

申请日：2000-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  ZULL HERIBERT ,  LINDER NORBERT

IPC: H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/00

Abstract: According to the invention, a textured coupling-out layer (6) with flanks (16) is located on an upper surface. Said flanks are aligned at an angle of between 60 DEG and 88 DEG in relation to the layer plane and form the boundaries of the coupling-out regions that are offset in relation to one another and are provided for emitting the radiation. The portions of the coupling-out layer that are located in the coupling-out regions can take the form of flat truncated cones and their flanks can be fluted or serrated, in order to increase the probability that the generated radiation strikes the external limiting surface of the coupling-out layer at a steeper angle than the critical angle of the total internal reflection.