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公开(公告)号：JP2004022401A
公开(公告)日：2004-01-22
申请号：JP2002177195
申请日：2002-06-18
Inventor： MEMESAWA SATOHIKO , TANAKA SADAO , NARUI HIRONOBU , YANASHIMA KATSUNORI , SASAKI KOJI
Abstract: PROBLEM TO BE SOLVED: To supply an organic material being set to be a vapor phase state to the entire surface of a substrate whose temperature is controlled.
SOLUTION: The organic material 12 is vaporized or sublimed in a vaporization sublimation chamber 5 to generate a feed gas. A carrier gas is mixed into the feed gas, and is transported to a film formation chamber 4 by a feed gas transportation pipe 6. The feed gas transported by the feed gas transport pipe 6 is discharged from an injector 18 toward the substrate 3. However, a substrate holder 2 rotates the substrate by performing rotary operation to supply the feed gas to the entire surface of the substrate 3. Additionally, a cooling medium is supplied to a substrate holder 2 by pipes 7a, 7b to cool the retained substrate 3, thus forming the organic film whose thickness distribution is uniform and appropriate within the substrate 3.
COPYRIGHT: (C)2004,JPO-
公开(公告)号：JP2004014246A
公开(公告)日：2004-01-15
申请号：JP2002164841
申请日：2002-06-05
Inventor： MEMESAWA SATOHIKO , NARUI HIRONOBU , YANASHIMA KATSUNORI , SASAKI KOJI
Abstract: PROBLEM TO BE SOLVED: To prevent rise in temperature of a base when an organic material in a vapor phase state is transported by using a carrier gas, to be adsorbed on the base.
SOLUTION: A base cooling chamber 6 and a film forming chamber 7 are defined in a chamber 2 while partitioned by a heat insulating wall 5, and the base 3 is moved between the base cooling chamber 6 and the film forming chamber 7 by the rotation of a base holder 8. The base cooling chamber 6 is provided with a cooling gas transport tube 12 for supplying a cooling gas to the base 3. A discharge port 14 of the cooling gas transport tube 12 is mounted oppositely to an organic film deposition face of the base 3. The film deposition chamber 7 is provided with a first material gas transport tube 24a, a second material gas transport tube 24b and a third material gas transport tube 24c, respectively transporting the material gas. The formation of the organic film and the cooling of the base can be achieved by moving the base 3 between the base cooling chamber 6 and the film forming chamber 7.
COPYRIGHT: (C)2004,JPO-
公开(公告)号：JP2004010989A
公开(公告)日：2004-01-15
申请号：JP2002168062
申请日：2002-06-10
Applicant: SONY CORP
Inventor： SASAKI KOJI , NARUI HIRONOBU , YANASHIMA KATSUNORI , MEMESAWA SATOHIKO
Abstract: PROBLEM TO BE SOLVED: To provide a thin-film forming apparatus which efficiently deposits a raw material on the surface of a substrate to form an organic thin-film, and inhibits the raw material from adhering to the inner wall of a vacuum chamber. SOLUTION: The thin-film forming apparatus comprises a vacuum chamber 11, a substrate holder 12 installed in the vacuum chamber 11, and a gas feeding means 13 arranged so as to supply a gas into the vacuum chamber 11, wherein the gas feeding means 13 comprises a source-gas feeding port 21 for supplying the source gas toward the substrate-mounting face 12a of the substrate holder 12, and an inert-gas feeding port 22 for supplying the inert gas for forming a wall with the flowing gas approximately parallel to the flow of the source gas, which is arranged at a position surrounding the source-gas feeding port 21. COPYRIGHT: (C)2004,JPO
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公开(公告)号：JP2003179311A
公开(公告)日：2003-06-27
申请号：JP2001378179
申请日：2001-12-12
Applicant: SONY CORP
Inventor： NAKAJIMA HIROSHI , YAMAGUCHI KYOJI , YANASHIMA KATSUNORI
Abstract: PROBLEM TO BE SOLVED: To provide a GaN semiconductor laser element whose threshold current value and operation voltage are lower than a conventional air-ridge type GaN semiconductor laser element. SOLUTION: The GaN semiconductor laser element 60 has a laminated structure in which an n-AlGaN clad layer 64, an n-GaN guide layer 66, an InGaN quantum well active layer 68, a p-GaN guide layer 70, a p-AlGaN clad layer 72, and a p-GaN contact layer 74 are laminated on an n-type GaN substrate 62 having a ridge structure 61 in ±10° direction, with (11-20) surface as a main surface. An n-clad layer is composed of an upper surface part 64a having (0001) surface, a slope part 64b having a slope of (11-22) surface, and a flat part 64c extending along (11-20) surface from the lower end of the tilted part, with a ridge structure embedded. The n-guide layer, active layer, p-guide layer, and p-clad layer are formed into the same shape along the n-clad layer. A p-side electrode 78 is formed on the p-GaN contact layer. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003017808A
公开(公告)日：2003-01-17
申请号：JP2001203186
申请日：2001-07-04
Inventor： ASAZUMA YASUNORI , YANASHIMA KATSUNORI , NAKAJIMA HIROSHI , YAMAGUCHI KYOJI
Abstract: PROBLEM TO BE SOLVED: To provide a gallium nitride-based semiconductor light-emitting element, composed of a gallium nitride-based multi-beam semiconductor laser element.
SOLUTION: The GaN-based multi-beam semiconductor laser element 10 is provided with a GaN-based laminated structure 14 on a stepped substrate 12. The projecting sections 16A and 16B of the substrate 12 respectively have identical height and widths WA and WB, which are narrower than the width WA. On the substrate 12. In concentration in the sections of a GaInN active layer 22 above the projecting sections 16A and 16B becomes lower in the portions near both end sections of the projecting sections 16A and 16B, as compared with the sections of the layer 22 above the flat surfaces of the substrate 12. Since the projecting section 16A has the broader width WA than the other projecting section 16B has, the influence on In concentration over the whole region of an active region 36A is small, even when the In concentration above both end sections of the projecting section 16A becomes lower, while when the In concentration above both end sections of the projecting section 16B decreases, the influence on In concentration in the whole region of an active region 36B becomes larger and In concentration in the active region 36B becomes lower than that in the active region 36A above the projecting section 16A. Consequently, the laser light B, emitted from the active region 36B, becomes shorter in wavelength than the laser light A emitted from the active region 36A.
COPYRIGHT: (C)2003,JPOAbstract translation: 要解决的问题：提供一种由氮化镓基多光束半导体激光元件组成的氮化镓基半导体发光元件。 解决方案：GaN基多光束半导体激光元件10在阶梯状基板12上设置有GaN基叠层结构14.基板12的突出部分16A和16B分别具有相同的高度和宽度WA和WB，其中 比宽度WA窄。 在基板12上，与突出部分16A和16B的两端部附近的部分相比，突起部分16A和16B上方的GaInN有源层22的部分的浓度比上述第22层的部分 由于突出部分16A具有比另一个突出部分16B具有更宽的宽度WA，因此即使在两者上方的In浓度都在In有源区域36A的整个区域上对In浓度的影响较小 突出部16A的端部变低，而当突出部16B的两端部的In浓度降低时，对有源区域36B的整个区域的In浓度的影响变大，有源区域36B的In浓度 变得低于突出部16A上方的有源区域36A中的位置。 因此，从有源区域36B发射的激光B的波长比从有源区域36A发射的激光A短。
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Patent Agency Ranking
公开(公告)号：JP2002335050A
公开(公告)日：2002-11-22
申请号：JP2001138182
申请日：2001-05-09
Applicant: SONY CORP
Inventor： YANASHIMA KATSUNORI , NAKAJIMA HIROSHI
Abstract: PROBLEM TO BE SOLVED: To improve the yield by preventing the pattern collapse, etc., without complicating the number of process steps. SOLUTION: A nitride semiconductor device has a buffer layer 11, an n-type clad layer 12, an n-type optical guide layer 13, an active layer 14, a p-type GaN optical guide layer 15, a p-type AlGaN clad layer 16, and a p-type GaN contact layer 17 laminated as nitride semiconductor layers and a current restriction layer 21 formed, e.g. on the surface layer of the optical guide layer 15. The current restriction layer 21 is formed by reactive ion etching the surface layer of the optical guide layer 15.
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公开(公告)号：JP2001352133A
公开(公告)日：2001-12-21
申请号：JP2000168312
申请日：2000-06-05
Applicant: SONY CORP
Inventor： TAKEYA MOTONOBU , YANASHIMA KATSUNORI , ASANO TAKEHARU , GOTO OSAMU , IKEDA MASAAKI , SHIBUYA KATSUYOSHI , HINO TOMOKIMI , KIJIMA SATORU , IKEDA MASAO
IPC: H01L21/205 , H01L33/32 , H01S5/323 , H01S5/343 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser for obtaining a crystal growth layer with less fluctuation in a crystal axis and for improving the characteristics of a device, a semiconductor device and a nitride-family III-V group compound substrate, and their manufacturing method. SOLUTION: A plurality of seed crystal layers 12 provided separately on one surface side of a substrate 11 for growth, and an n-side contact layer 13 that is grown based on the plurality of seed crystal layers and has a growth region in a crosswise direction, are provided. In the seed crystal layer 12, the product of width w1 (unit: μm) of a boundary surface 12a with the n-side contact layer 13 in its arranged direction A and thickness t1 (unit: μm) in a direction where the n-side contact layer 13 is laminated is set to 15 or less, thus reducing the fluctuation of the crystal axis on the n-side contact layer 13, and hence improving the crystallinity of a semiconductor layer from an n-type clad layer 14 to a p-side contact layer 19 being laminated on the n-side contact layer 13.
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128.发明专利
公开(公告)号：JP2001267257A
公开(公告)日：2001-09-28
申请号：JP2001006518
申请日：2001-01-15
Applicant: SONY CORP
Inventor： YANASHIMA KATSUNORI , TAKEYA MOTONOBU
Abstract: PROBLEM TO BE SOLVED: To reduce surface defect by reducing the density of dislocation of a crystal layer in a process for forming a crystal layer of a nitride semiconductor using a lateral growth technology of seed crystal. SOLUTION: On a buffer layer 100a formed on a substrate 100, GaN:Si is grown to form a seed crystal 105. Since the inside of a reaction tube 1 is brought into pressurized state (1.6 atm), dislocation density of the seed crystal 105 itself is reduced as compared with a conventional method where a semiconductor is produced under reduced pressure. When a nitride semiconductor crystal is grown in the lateral direction from the seed crystal 105, dislocation density is also reduced directly above the seed crystal 105 as well as in a lateral growth region where dislocation is low originally resulting in a crystal layer 107 having reduced surface defect. Consequently, dislocation is also reduced in second nitride semiconductor layers 108-115 formed thereon. When the second nitride semiconductor layers 108-115 are formed under pressure, dislocation density is reduced furthermore and a highly reliable semiconductor laser having reduced defect is fabricated.
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公开(公告)号：JP2000082671A
公开(公告)日：2000-03-21
申请号：JP24870998
申请日：1998-09-02
Applicant: SONY CORP
Inventor： FUNATO KENJI , YANASHIMA KATSUNORI , HASHIMOTO SHIGEKI
IPC: H01L21/205 , H01L21/20 , H01L21/338 , H01L29/778 , H01L29/812 , H01S3/00 , H01S3/02 , H01S5/00 , H01S5/30 , H01S5/323 , H01S5/343
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device where electric characteristic is excellent, the life can be prolonged and the freedom of design can be improved by obtaining a nitride based III-V compound semiconductor layer excellent in crystallinity, in a semiconductor device where the nitride based III-V compound semiconductor layer is formed, and to provide a manufacturing method of the device. SOLUTION: In a nitride based III-V compound semiconductor device where an epitaxial growth semiconductor layer 4 containing a GaN layer is formed on a sapphire substrate 2, lattice constant (a) of the GaN layer is made at least lower than or equal to 0.3183 nm. Thereby a nitride based III-V compound semiconductor layer excellent in crystallinity can be obtained.
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公开(公告)号：JP2000058462A
公开(公告)日：2000-02-25
申请号：JP22910198
申请日：1998-08-13
Applicant: SONY CORP
Inventor： HASHIMOTO SHIGEKI , YANASHIMA KATSUNORI , ASAZUMA YASUNORI , IKEDA MASAO
Abstract: PROBLEM TO BE SOLVED: To manufacture nitride based III-V compound semiconductor in which non-luminescence center is few and crystallinity is superior. SOLUTION: In this method, a nitride based III-V compound semiconductor is manufactured by vapor deposition using material of a group III element, ammonia as material of group V element and hydrogen. Vapor phase mol. ratio (H2/(H2+NH3) of hydrogen to the total amount of hydrogen and ammonia is specified as 0.3
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