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    Infrared detectors
    121.
    发明授权
    Infrared detectors 有权
    红外探测器

    公开(公告)号：US09121761B2

    公开(公告)日：2015-09-01

    申请号：US13670892

    申请日：2012-11-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-hyun Nam ,  Hae-seok Park

    IPC: G01J5/20 ,  G01J5/12 ,  G01J5/04 ,  G01J5/02 ,  G01J5/06 ,  G01J5/08

    CPC classification number: G01J5/12 ,  B81B2201/0207 ,  G01J5/024 ,  G01J5/0285 ,  G01J5/045 ,  G01J5/046 ,  G01J5/06 ,  G01J5/0853

    Abstract: In some example embodiments, an infrared detector may comprise a substrate; a resonator spaced apart from the substrate, the resonator absorbing incident infrared light; a thermoelectric material layer contacting the resonator and having a variable resistance according to temperature variation due to the absorbed incident infrared light; a lead wire electrically connecting the thermoelectric material layer and the substrate; a heat separation layer between the substrate and the thermoelectric material layer, the heat separation layer preventing heat from being transferred from the thermoelectric material layer to the substrate; and/or a ground plane layer preventing the incident infrared light from proceeding toward the substrate. The heat separation layer may at least reduce heat transfer from the thermoelectric material layer to the substrate. The ground plane layer may at least reduce an amount of the incident infrared light that reaches the substrate.

    Abstract translation: 在一些示例性实施例中，红外检测器可以包括基底; 谐振器，其与所述衬底间隔开，所述谐振器吸收入射的红外光; 接触谐振器的热电材料层，并且由于吸收的入射红外光而具有根据温度变化的可变电阻; 电连接所述热电材料层和所述基板的引线; 在所述基板和所述热电材料层之间的热分离层，所述热分离层防止热量从所述热电材料层转移到所述基板; 和/或防止入射的红外光向衬底延伸的接地层。 热分离层可以至少减少从热电材料层到基底的热传递。 接地层可以至少减少到达基板的入射红外光的量。

    MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
    123.
    发明申请
    MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 有权
    半导体基板上的单片集成多传感器器件及其方法

    公开(公告)号：US20140264657A1

    公开(公告)日：2014-09-18

    申请号：US14207419

    申请日：2014-03-12

    Applicant: BISHNU PRASANNA GOGOI

    Inventor： BISHNU PRASANNA GOGOI

    IPC: H01L27/02 ,  H01L29/66 ,  H01L43/12 ,  H01L27/22 ,  H01L27/14 ,  H01L31/18

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

    Abstract translation: 公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。 直接传感器需要测量的参数直接应用于直接传感器。 相反，间接传感器可以将被测量的参数间接地应用于间接传感器。 由直接传感器测量的参数与由间接传感器测量的参数不同。 换句话说，直接传感器和间接传感器是不同的类型。 直接传感器的一个例子是压力传感器。 由压力传感器测量的压力必须应用于压力传感器。 间接传感器的一个例子是加速度计。 速度变化率不必直接应用于加速度计。 在一个实施例中，使用光刻技术形成直接和间接传感器。

    MICROBOLOMETER WITH IMPROVED MECHANICAL STABILITY AND METHOD OF MANUFACTURING THE SAME
    125.
    发明申请
    MICROBOLOMETER WITH IMPROVED MECHANICAL STABILITY AND METHOD OF MANUFACTURING THE SAME 失效
    具有改进的机械稳定性的微型测量仪及其制造方法

    公开(公告)号：US20090152466A1

    公开(公告)日：2009-06-18

    申请号：US12181871

    申请日：2008-07-29

    Applicant: Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    Inventor： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC: H01L27/14

    CPC classification number: G01J5/20 ,  B81B3/007 ,  B81B2201/0207 ,  B81B2203/0118 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024

    Abstract: Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.

    Abstract translation: 本发明提供一种具有悬臂结构的微电热计及其制造方法，特别是具有三维悬臂结构的微电热计，其从传统的二维悬臂结构得到改进，及其制造方法。 该方法包括提供包括读出集成电路和用于形成吸收结构的反射层的衬底，在衬底上形成牺牲层，在牺牲层中形成具有不均匀横截面的悬臂结构，形成传感器部分 通过悬臂结构从衬底隔离，并去除牺牲层。

    Process for fabricating three-dimensional, free-standing microstructures
    126.
    发明授权
    Process for fabricating three-dimensional, free-standing microstructures 失效
    制造三维，独立微结构的工艺

    公开(公告)号：US4849070A

    公开(公告)日：1989-07-18

    申请号：US243750

    申请日：1988-09-14

    Applicant: Vincent T. Bly ,  Alan P. Bradford ,  J. Thomas Cox

    Inventor： Vincent T. Bly ,  Alan P. Bradford ,  J. Thomas Cox

    IPC: G01L9/00 ,  H01L27/16

    CPC classification number: B81C1/00476 ,  G01L9/0042 ,  H01L27/16 ,  B81B2201/0207 ,  B81B2201/042

    Abstract: A sublimable layer is deposited on a substrate, holes are etched through sublimable layer, a thin-layer structure is deposited on portions of the remaining sublimable layer, and a thick structural support material is deposited to cover the sides and bottoms of the holes and portions of the thin-layer structure. When the sublimable layer is sublimed with the heat, photon enhancement (ultraviolet light) and oxygen purging, a structure is left which consists of a thin layer or layers supported by posts above a substrate.

    Abstract translation: 将升华层沉积在基材上，通过可升华层蚀刻孔，在剩余的可升华层的部分上沉积薄层结构，沉积厚的结构载体材料以覆盖孔的侧面和底部， 部分薄层结构。 当升华层用热，光子增强（紫外光）和氧气吹扫升华时，留下由薄层或由基板上方的柱支撑的薄层组成的结构。

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