公开(公告)号：EP1493712A2

公开(公告)日：2005-01-05

申请号：EP04102666.7

申请日：2004-06-11

Applicant: Dalsa Semiconductor Inc.

Inventor： Ouellet, Luc ,  Antaki, Robert

IPC: B81B3/00

CPC classification number: B81C1/00666 ,  B81B2207/015 ,  B81C2201/0167

Abstract: A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/= 100Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/= 100Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/= 100Mpa.

公开(公告)号：EP1012890A1

公开(公告)日：2000-06-28

申请号：EP98915245.9

申请日：1998-04-01

Applicant: Xros, Inc.

Inventor： NEUKERMANS, Armand, P. ,  SLATER, Timothy, G. ,  DOWNING, Philip

IPC: H01L41/08

CPC classification number: B81B3/0078 ,  B81B2203/0109 ,  B81C2201/0167 ,  G02B26/0841 ,  G02B26/085 ,  G02B26/0858 ,  G02B26/0866 ,  G02B26/101 ,  H02K33/18

Abstract: An improved micromachined structure used for beam scanners, gyroscopes, etc. includes a reference member (154, 54) from which project a first pair of axially aligned torsion bars (156, 56). A first dynamic member (54 or 52), coupled to and supported from the reference member (154, 54) by the torsion bars (156, 56), oscillates in one-dimension about the torsion bar's axis. A second dynamic member (52) may be supported from the first dynamic member (54) by a second pair of axially aligned torsion bars (56) for two-dimensional oscillation. The dynamic members (54, 52) respectively exhibit a plurality of vibrational modes each having a frequency and a Q. The improvement includes means for altering a characteristic of the dynamic member's frequency and Q. Coupling between dynamic members (54, 52) permits altering the second dynamic member's frequency and Q by techniques applied to the first dynamic member (54). Some techniques disclosed also increase oscillation amplitude or reduce driving voltage, and also increase mechanical ruggedness of the structure.

Abstract translation: 用于束扫描仪，陀螺仪等的改进的微机械结构包括参考构件（154,54），第一对轴向对齐的扭杆（156,56）从该参考构件（154,54）突出。 通过扭杆（156,56）联接到参考构件（154,54）并由参考构件（154,54）支撑的第一动态构件（54或52）围绕扭杆的轴线在一维上振动。 第二动态构件（52）可以由第二对轴向对齐的扭杆（56）从第一动态构件（54）支撑以进行二维摆动。 动态元件（54,52）分别具有多个振动模式，每个振动模式具有一个频率和一个Q.改进包括用于改变动态元件的频率和Q的特性的装置。动态元件（54,52）之间的耦合允许改变 第二动态构件的频率和Q通过应用于第一动态构件（54）的技术。 所公开的一些技术还增加了振幅或降低了驱动电压，并且还增加了结构的机械耐用性。

公开(公告)号：EP0574697A1

公开(公告)日：1993-12-22

申请号：EP93107595.6

申请日：1993-05-10

Applicant: MOTOROLA, INC.

Inventor： Addie, David L. ,  Gutteridge, Ronald J. ,  Ristic, Ljubisa

IPC: G01L1/14 ,  G01L9/00 ,  G01P15/08

CPC classification number: B81B3/0072 ,  B81C2201/0167 ,  G01L1/148 ,  G01P15/0802 ,  G01P15/125

Abstract: A double pinned micromachined sensor (11) which utilizes a laminated film (27) having overall tensile strength formed on top of a silicon substrate (16). The laminated film (27) comprises a layer of silicon nitride (18) encapsulated by two layers of polysilicon (19,21), the silicon nitride (18) providing overall tension for the laminated film. The laminated film (27) is supported above the silicon substrate by support posts (17) and is selectively etched to form a sensor (11,13).

Abstract translation: 一种双引脚微加工传感器（11），其利用在硅衬底（16）的顶部上形成总体拉伸强度的层压薄膜（27）。 层压膜（27）包括由两层多晶硅（19,21）封装的氮化硅层（18），氮化硅（18）为叠层膜提供整体张力。 层压膜（27）通过支撑柱（17）支撑在硅衬底上，并且被选择性地蚀刻以形成传感器（11,13）。

公开(公告)号：EP2707953B1

公开(公告)日：2016-04-13

申请号：EP12786090.6

申请日：2012-05-11

Applicant: Teknologian tutkimuskeskus VTT Oy

Inventor： PRUNNILA, Mika ,  JAAKKOLA, Antti ,  PENSALA, Tuomas

IPC: H03H9/02 ,  H03H9/24 ,  B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0177 ,  G06F17/5045 ,  H03H9/02448 ,  H03H9/2447 ,  H03H2009/2442

公开(公告)号：EP2707953A1

公开(公告)日：2014-03-19

申请号：EP12786090.6

申请日：2012-05-11

Applicant: Teknologian tutkimuskeskus VTT

Inventor： PRUNNILA, Mika ,  JAAKKOLA, Antti ,  PENSALA, Tuomas

IPC: H03H9/02 ,  H03H9/24 ,  B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0177 ,  G06F17/5045 ,  H03H9/02448 ,  H03H9/2447 ,  H03H2009/2442

Abstract: The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100°C. The device can be a resonator. Also a method of designing the device is disclosed.

公开(公告)号：EP2019081A3

公开(公告)日：2012-09-19

申请号：EP08160924.0

申请日：2008-07-22

Applicant: Honeywell International Inc.

Inventor： Detry, James F.

IPC: B81C1/00

CPC classification number: B81C1/00595 ,  B81C1/00365 ,  B81C2201/0136 ,  B81C2201/0167 ,  B81C2203/031

Abstract: A wafer for use in a MEMS device having two doped layers surrounding an undoped layer of silicon is described. By providing two doped layers around an undoped core, the stress in the lattice structure of the silicon is reduced as compared to a solidly doped layer. Thus, problems associated with warping and bowing are reduced. The wafer may have a pattered oxide layer to pattern the deep reactive ion etch. A first deep reactive ion etch creates trenches in the layers. The walls of the trenches are doped with boron atoms. A second deep reactive ion etch removes the bottom walls of the trenches. The wafer is separated from the silicon substrate and bonded to at least one glass wafer.

公开(公告)号：EP2157046A3

公开(公告)日：2012-08-22

申请号：EP08153354.9

申请日：2007-05-16

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC

Inventor： Tung, Ming-Hau ,  Kogut, Lior

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

公开(公告)号：EP1826174A3

公开(公告)日：2010-11-10

申请号：EP07100826.2

申请日：2007-01-19

Applicant: OMRON CORPORATION

Inventor： Kasai, Takashi ,  Wakabayashi, Shuichi

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81C2201/0167 ,  C23C16/24 ,  C23C16/56

Abstract: A method for forming a thin film structure, which has small tensile stress due to controlled mechanical stress, and is made to be conductive, is provided. A lower film including polysilicon thin film is formed on a substrate such as Si substrate, then an impurity such as P is doped into the lower film and thermally diffused, thereby the lower film is made conductive. Then, an upper film is deposited on the lower film, the upper film including a polysilicon thin film that is simply deposited and not made to be conductive. The upper film has a tensile stress in an approximately the same level as compressive stress of the lower film, and a thin film structure as a whole, the structure including the lower film and the upper film, is adjusted to have small tensile stress.

公开(公告)号：EP1155442B1

公开(公告)日：2008-12-17

申请号：EP00903763.1

申请日：2000-02-09

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： MORICEAU, Hubert ,  RAYSSAC, Olivier ,  CARTIER, Anne-Marie ,  ASPAR, Bernard

IPC: H01L21/20 ,  H01L21/18 ,  H01L21/762 ,  B81B3/00

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  H01L21/185 ,  H01L21/76254 ,  Y10T428/12528 ,  Y10T428/31678

Abstract: The invention concerns a multilayer structure with controlled internal stresses comprising successively: a first main layer (110a), at least a first stress-adapting layer (130) in contact with the first main layer, at least a second stress-adapting layer (120) placed in contact by adherence with said first stress-adapting layer and a second main layer (110b) in contact with the second stress-adapting layer, the first and second stress-adapting layers having contact stresses with the first and second main layers. The invention is useful for electronic circuits and diaphragm devices.

公开(公告)号：EP1943185A1

公开(公告)日：2008-07-16

申请号：EP07794971.7

申请日：2007-05-16

Applicant: Qualcomm Mems Technologies, Inc.

Inventor： TUNG, Ming-Hau ,  KOGUT, Lior

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.