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    Oxygen doping of silicon oxyfluoride glass
    122.
    发明授权
    Oxygen doping of silicon oxyfluoride glass 失效
    氟氧化硅玻璃的氧掺杂

    公开(公告)号：US06502426B2

    公开(公告)日：2003-01-07

    申请号：US09997782

    申请日：2001-11-28

    Applicant: Lisa A. Moore ,  Charlene M. Smith

    Inventor： Lisa A. Moore ,  Charlene M. Smith

    IPC: C03B3200

    CPC classification number: G03F7/70958 ,  C03B19/1423 ,  C03B19/1453 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/21 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/21 ,  C03C2203/54 ,  G03F1/60

    Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which contains doped O2 molecules and which exhibits very high transmittance and laser transmission durability in the vacuum ultraviolet (VUV) wavelength region. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm contains intersticial O2 molecules which provide improved endurance to laser exposure. Preferably the O2 doped silicon oxyfluoride glass is characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

    Abstract translation: 公开了适用于在低于190nm的VUV波长区域中用于光刻应用的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的，使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模衬底是含有掺杂的O 2分子并且在真空紫外（VUV）波长区域中显示非常高的透射率和激光透射耐久性的“干式”氟氧化硅玻璃。 除了含氟并且具有很少或不具有OH含量之外，本发明的适用于157nm的光掩模衬底的氟氧化硅玻璃含有间隔的O 2分子，其提供了对激光曝光的改善的耐久性。 优选地，掺杂氧的氟氧化硅玻璃的特征在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。

    Nonlinear optical silica material and nonlinear optical device
    124.
    发明授权
    Nonlinear optical silica material and nonlinear optical device 有权
    非线性光学二氧化硅材料和非线性光学器件

    公开(公告)号：US06376086B1

    公开(公告)日：2002-04-23

    申请号：US09362547

    申请日：1999-07-28

    Applicant: Tomonori Nagashima ,  Naoki Nakamura

    Inventor： Tomonori Nagashima ,  Naoki Nakamura

    IPC: B32B900

    CPC classification number: G02F1/3555 ,  C03C3/06 ,  C03C3/076 ,  C03C3/11 ,  C03C2201/08 ,  C03C2201/12 ,  C03C2201/21

    Abstract: A nonlinear optical silica material mainly consisting of SiO2—GeO2 to which hydrogen or halogen element X is added. Oxygen bonded to Ge contained in the nonlinear optical silica material is replaced by H or X, and one Ge has two Ge—O bonds and one Ge—H (or Ge—X) bond at Ge· points where nonlinearity is exhibited in the silica material. The Ge—H (or Ge—X) bond does not relate to a crystal network, so that when the polarity is oriented in order to exhibit nonlinearity at Ge·, an electric field to be applied can be lowered, and when a optical semiconductor hybrid element or the like is produced, other portions of the semiconductor elements can be prevented from being broken or degraded in performance. An insulating film can be interposed between the semiconductor substrate and the nonlinear optical silica film to prevent undesired impurities from dispersing into the semiconductor substrate and other elements and preventing a defect from being caused in the crystal of the substrate due to the silica film.

    Abstract translation: 主要由添加有氢或卤素元素X的SiO 2 -GOO组成的非线性光学二氧化硅材料。 在非线性光学二氧化硅材料中包含的与Ge结合的氧被H或X替代，并且一个Ge在Ge处具有两个Ge-O键和一个Ge-H（或Ge-X）键。 在二氧化硅材料中显示出非线性的点。 Ge-H（或Ge-X）键与晶体网络无关，因此当极性取向为在Ge表现出非线性时，可以降低要施加的电场，而当光半导体 制造混合元件等，可以防止半导体元件的其他部分的性能破坏或劣化。 可以在半导体衬底和非线性光学二氧化硅膜之间插入绝缘膜，以防止不期望的杂质分散到半导体衬底和其它元件中，并防止由于二氧化硅膜而在衬底的晶体中引起缺陷。

    Projection lithography photomask blanks, preforms and methods of making
    125.
    发明授权
    Projection lithography photomask blanks, preforms and methods of making 失效
    投影光刻光掩模坯料，预成型件和制造方法

    公开(公告)号：US06265115B1

    公开(公告)日：2001-07-24

    申请号：US09397577

    申请日：1999-09-16

    Applicant: George Edward Berkey ,  Lisa Anne Moore ,  Charles Chunzhe Yu

    Inventor： George Edward Berkey ,  Lisa Anne Moore ,  Charles Chunzhe Yu

    IPC: G03F900

    CPC classification number: C03C4/0085 ,  C03B19/1415 ,  C03B19/1423 ,  C03B19/1453 ,  C03B19/1469 ,  C03B19/1492 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/21 ,  C03B2207/02 ,  C03B2207/06 ,  C03B2207/20 ,  C03B2207/32 ,  C03B2207/52 ,  C03B2207/54 ,  C03B2207/66 ,  C03C3/06 ,  C03C2201/12 ,  C03C2201/21 ,  G03F1/60

    Abstract: The invention includes methods of making lithography photomask blanks. The invention also includes lithography photomask blanks and preforms for producing lithography photomask. The method of making a lithography photomask blank includes providing a soot deposition surface, producing SiO2 soot particles and projecting the SiO2 soot particles toward the soot deposition surface. The method includes successively depositing layers of the SiO2 soot particle on the deposition surface to form a coherent SiO2 porous glass preform body comprised of successive layers of the SiO2 soot particles and dehydrating the coherent SiO2 glass preform body to remove OH from the preform body. The SiO2 is exposed to and reacted with a fluorine containing compound and consolidated into a nonporous silicon oxyfluoride glass body with parallel layers of striae. The method further includes forming the consolidated silicon oxyfluoride glass body into a photomask blank having a planar surface with the orientation of the striae layer parallel to the photomask blank planar surface.

    Abstract translation: 本发明包括制造光刻光掩模坯料的方法。 本发明还包括光刻光掩模坯料和用于生产光刻光掩模的预成型件。 制造光刻光掩模坯料的方法包括提供烟灰沉积表面，产生SiO 2烟灰颗粒并将SiO 2烟灰颗粒投射到烟灰沉积表面。 该方法包括在沉积表面上依次沉积SiO 2烟灰颗粒的层，以形成由SiO 2烟灰颗粒的连续层组成的粘结SiO 2多孔玻璃预制体，并使相干的SiO 2玻璃预制体脱水以从预成型体中去除OH。 将SiO 2暴露于含氟化合物并与其反应，并固化成具有平行的条纹层的无孔氟氧化硅玻璃体。 该方法还包括将固化的氟氧化硅玻璃体形成为具有平坦表面的光掩模坯料，其中条纹层的取向平行于光掩模坯料平面。

    Method of producing synthetic quartz glass
    128.
    再颁专利
    Method of producing synthetic quartz glass 失效
    生产合成石英玻璃的方法

    公开(公告)号：USRE30883E

    公开(公告)日：1982-03-16

    申请号：US121078

    申请日：1980-02-13

    Applicant: Karlheinz Rau ,  Fritz Simmat ,  Albert Muhlich ,  Norbert Treber

    Inventor： Karlheinz Rau ,  Fritz Simmat ,  Albert Muhlich ,  Norbert Treber

    IPC: C03B37/014 ,  C03B37/018 ,  C03C3/06 ,  G02B6/00

    CPC classification number: C03C3/06 ,  C03B37/01413 ,  C03B37/01426 ,  C03B37/01823 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2207/85 ,  C03C2201/12 ,  C03C2203/40

    Abstract: An improvement in a method for producing a synthetic hydroxyl ion-free quartz glass wherein a hydrogen free silicon compound is heated in a hydrogen-free gas stream while the gas stream is passed through an induction coupled plasma burner, the gas stream containing elemental and/or bound oxygen and the oxidation product is deposited on a refractory support as a vitreous mass, the improvement lying in including in the gas stream a gaseous hydrogen-free, thermally decomposable compound which yields fluorine in an amount of at least 500 gms. per kilogram of silica to be produced; an apparatus for producing a synthetic OH ion-free quartz glass comprising an induction coupled plasma burner which burner has disposed thereabout 3 concentric quartz glass tubes disposed in stepped configuration of which the outermost tube is the longest and the innermost tube is the shortest. The apparatus includes means for passing through the innermost tube a hydrogen-free gas stream containing elemental oxygen and/or bound oxygen together with a gaseous hydrogen free thermally decomposable compound which yields fluorine. The apparatus further contains means for passing a separating gas such as oxygen through the space defined by the innermost tube and the middle tube and the middle tube and the outermost tube.

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