Abstract:
PURPOSE: A polymer is provided to have a wide energy band gap and high triplet energy level, and to transfer both holes and electrons. CONSTITUTION: A polymer comprises a repeating unit represented by chemical formula 1. In chemical formula 1, X1 is a single bond, -[C(R20)(R21)]a-, -Si(R22)(R23)-, -S-, or -O-; a is an integer from 1-5; each of R1-R14 is hydrogen, deuterium, halogen, hydroxy, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxy group or salts thereof, phosphorous or salts thereof, substituted or unsubstituted C1-60 alkyl, substituted or unsubstituted C2-60 alkenyl, substituted or unsubstituted C2-60 alkynyl, substituted or unsubstituted C1-60 alkoxy, substituted or unsubstituted C3-60 cycloalkyl, substituted or unsubstituted C3-60 cycloalkenyl, substituted or unsubstituted C5-60 aryl, substituted or unsubstituted C5-60 aryloxy, substituted or unsubstituted C5-60 arylthio, substituted or unsubstituted C2-60 heteroaryl, -N(Q1)(Q2), or -Si(Q3)(Q4)(Q5).
Abstract:
PURPOSE: An anti-fuse circuit using a magnetic tunnel junction breakdown and a semiconductor device including the same are provided to reduce a layout size of the anti-fuse circuit by using an MRAM with a small size as a fuse. CONSTITUTION: An anti-fuse array(111) includes a plurality of tunnel magneto-resistance elements and a plurality of transistors. The plurality of transistors are serially connected to the plurality of tunnel magneto-resistance elements, respectively. An anti-fuse array breaks down the magnetic tunnel junction of one or more tunnel magneto-resistance elements and stores fuse information. A sensing circuit(115) senses and amplifies the output signals of the anti-fuse array.
Abstract:
PURPOSE: A layer cell communication system which uses a feedback method according to a class of an access network is provided to use wireless resource for feedback information or use respectively different code books. CONSTITUTION: An object terminal selects a first codebook for a previously stored macro base station and a second codebook for a base station(621). The object terminal assigns feedback resource corresponding to the second code book(622). The object terminal generates feedback information related to the channel of the object terminal by using the object terminal(624). The object terminal transmits the feedback information by using the allocated feedback resources to the small base station(625).
Abstract:
PURPOSE: A cooperative interference control system between multi cells performing JP(Joint Processing) technique without the reduction of the capacity is provided to cooperatively control interference between multi cells by allocating resource. CONSTITUTION: A resource allocation unit(310) allocates a first frequency in the center of a neighbor cell related to the neighboring base center. The resource allocator assigns the second frequency to an edge area of the adjacent cell. In case the terminal is located in the edge region of the adjacent cell, an interference control unit(320) transmits and receives scheduling information and channel information to the terminal through the second frequency.
Abstract:
PURPOSE: An information storing apparatus using the movement of a magnetic domain wall and a method for driving the same are provided to implement random access by storing data with high-capacity and increase operational speed. CONSTITUTION: A memory part(110) includes at least one magnetic track. A row decoder(120) generates word-line signals(WS1-WSn) in order to select magnetic domains for performing a recording-reading operation. A record-read controlling part(130) controls the reading operation which reads data from the selected magnetic domains. A block selection controlling part(140) generates a block selection signal in order to select a pre-set block in the memory part. A domain controlling part(150) controls the movement of the magnetic domains and magnetic domain wall in a selected magnetic track.
Abstract:
PURPOSE: An information storage device using magnetic domain wall movement and an operating method thereof are provided to implement information storage suitable for random access because the movement of the domain of a magnetic track is reduced and peripheral circuits are efficiently arranged. CONSTITUTION: An information storage device using magnetic domain wall movement comprises magnetic tracks(111,112,113), a cell array area(110), a row decoder(120), and a column decoder(130). The magnetic tracks include a plurality of magnetic domains for storing data. A plurality of write/read units corresponding to the magnetic tracks are arranged in the cell array area. The row decoder is provided with a row address and selects one or more magnetic tracks corresponding to the row address. The column decoder is provided with a column address and selects one or more write/read units corresponding to the column address.
Abstract:
PURPOSE: A resistive memory device, a memory system including the same, and a writing method of the same are provided to reduce a writing time and a reading time by wiring data in the first bit of multi-bit cells. CONSTITUTION: A memory cell array(100) includes a plurality of resistive memory cells for storing data. A row selecting circuit(110) includes a row decoder(X-DECODER) responding a row address(ADDX). A control circuit(500) controls the input-output operation of the data in response with a mode signal(MS). A control signal from the control circuit is divided into a timing control signal and a voltage control signal. The timing control signal is applied to the row selecting circuit, a column decoder(120), and an input-output circuit(400).
Abstract:
PURPOSE: A semiconductor device, a semiconductor system thereof, and an error correction code processing method thereof are provided to improve the performance of correcting fail data by improving the reliability of an error correction code. CONSTITUTION: A normal cell area(20) includes a memory cell for saving data bits. An error correction code cell area(30) includes an ECC memory pair which saves an error correction code bit as complementary error correction code bits. A read circuit simultaneously reads the complementary error correction code bits which are written to the ECC memory pair during a read operation. A write circuit sequentially writes the complementary error correction code bits to the ECC memory pair during a write operation.
Abstract:
PURPOSE: A data storage device and a method for operating the same are provided to improve the reliability of the data storage device by confirming the position of data stored in a track. CONSTITUTION: A data storage device comprises a magnetic track(100) and a position detector(300). The magnetic track has a plurality of magnetic domains and magnetic domain walls arranged between the magnetic domains. Actual data and dummy data are saved in the magnetic domains. The position detector detects the position of the dummy data which is prior to the actual data and used for locating the actual data. The dummy data comprises two or more consecutive data groups.