公开(公告)号：US11320745B2

公开(公告)日：2022-05-03

申请号：US17012705

申请日：2020-09-04

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Omer Abubaker Omer Adam ,  Te-Chih Huang ,  Youping Zhang

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/47 ,  G01N21/88

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

公开(公告)号：US20220066330A1

公开(公告)日：2022-03-03

申请号：US17497087

申请日：2021-10-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Anagnostis TSIATMAS ,  Paul Christiaan Hinnen ,  Elliott Gerard Mc Namara ,  Thomas Theeuwes ,  Maria Isabel De La Fuente Valentin ,  Mir Homayoun Shahrjerdy ,  Arie Jeffrey Den Boef ,  Shu-jin Wang

IPC: G03F7/20 ,  G06T7/00 ,  G06K9/46

Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

公开(公告)号：US20210349403A1

公开(公告)日：2021-11-11

申请号：US17383086

申请日：2021-07-22

Applicant: ASML Netherlands B.V.

Inventor： Johannes Fitzgerald De Boer ,  Vasco Tomas Tenner ,  Arie Jeffrey Den Boef ,  Christos Messinis

IPC: G03F7/20 ,  G01N21/88

Abstract: Methods and apparatus are disclosed for determining a characteristic of a structure. In one arrangement, the structure is illuminated with first illumination radiation to generate first scattered radiation. A first interference pattern is formed by interference between a portion of the first scattered radiation reaching a sensor and first reference radiation. The structure is also illuminated with second illumination radiation from a different direction. A second interference pattern is formed using second reference radiation. The first and second interference patterns are used to determine the characteristic of the structure. Azimuthal angles of the first and second reference radiations onto the sensor are different.

公开(公告)号：US11119415B2

公开(公告)日：2021-09-14

申请号：US16376639

申请日：2019-04-05

Applicant: ASML Netherlands B.V.

Inventor： Johannes Fitzgerald De Boer ,  Vasco Tomas Tenner ,  Arie Jeffrey Den Boef ,  Christos Messinis

IPC: G03F7/20 ,  G01N21/88

Abstract: Methods and apparatus are disclosed for determining a characteristic of a structure. In one arrangement, the structure is illuminated with first illumination radiation to generate first scattered radiation. A first interference pattern is formed by interference between a portion of the first scattered radiation reaching a sensor and first reference radiation. The structure is also illuminated with second illumination radiation from a different direction. A second interference pattern is formed using second reference radiation. The first and second interference patterns are used to determine the characteristic of the structure. Azimuthal angles of the first and second reference radiations onto the sensor are different.

公开(公告)号：US10996571B2

公开(公告)日：2021-05-04

申请号：US16856128

申请日：2020-04-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Robert John Socha ,  Arie Jeffrey Den Boef ,  Nitesh Pandey

IPC: G03F7/20 ,  G01N21/956 ,  G01B11/27 ,  G01N21/88

Abstract: A method of adjusting a metrology apparatus, the method including: spatially dividing an intensity distribution of a pupil plane of the metrology apparatus into a plurality of pixels; and reducing an effect of a structural asymmetry in a target on a measurement by the metrology apparatus on the target, by adjusting intensities of the plurality of pixels.

公开(公告)号：US20210123724A1

公开(公告)日：2021-04-29

申请号：US17141698

申请日：2021-01-05

Applicant: ASML Netherlands B.V.

Inventor： Marinus Johannes Maria VAN DAM ,  Arie Jeffrey Den Boef ,  Nitesh Pandey

IPC: G01B11/25 ,  G02F1/01 ,  G02F1/33

Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the apparatus comprising: a radiation source configured to generate illumination radiation; at least two illumination branches comprising at least one optical fiber and configured to illuminate a structure on a substrate from different angles; and a radiation switch configured to receive the illumination radiation and transfer at least part of the radiation to a selectable one of the at least two illumination branches.

公开(公告)号：US10816909B2

公开(公告)日：2020-10-27

申请号：US16150879

申请日：2018-10-03

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Arie Jeffrey Den Boef ,  Armand Eugene Albert Koolen ,  Nitesh Pandey ,  Vasco Tomas Tenner ,  Willem Marie Julia Marcel Coene ,  Patrick Warnaar

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/47 ,  G01N21/95 ,  G01B11/06 ,  G01B11/02

Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

公开(公告)号：US10718604B2

公开(公告)日：2020-07-21

申请号：US16507297

申请日：2019-07-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

IPC: G01B11/26 ,  G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US10678139B2

公开(公告)日：2020-06-09

申请号：US16245400

申请日：2019-01-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Joeri Lof ,  Hans Butler ,  Sjoerd Nicolaas Lambertus Donders ,  Aleksey Yurievich Kolesnychenko ,  Erik Roelof Loopstra ,  Hendricus Johannes Maria Meijer ,  Johannes Catherinus Hubertus Mulkens ,  Roelof Aeilko Siebrand Ritsema ,  Frank Van Schaik ,  Timotheus Franciscus Sengers ,  Klaus Simon ,  Joannes Theodoor De Smit ,  Alexander Straaijer ,  Bob Streefkerk ,  Erik Theodorus Maria Bijlaart ,  Christiaan Alexander Hoogendam ,  Helmar Van Santen ,  Marcus Adrianus Van De Kerkhof ,  Mark Kroon ,  Arie Jeffrey Den Boef ,  Joost Jeroen Ottens ,  Jeroen Johannes Sophia Maria Mertens

IPC: G03F7/20

Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.

公开(公告)号：US10585363B2

公开(公告)日：2020-03-10

申请号：US15575069

申请日：2016-03-14

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Arie Jeffrey Den Boef ,  Alessandro Polo ,  Patricius Aloysius Jacobus Tinnemans ,  Adrianus Johannes Hendrikus Schellekens ,  Elahe Yeganegi Dastgerdi ,  Willem Marie Julia Marcel Coene ,  Erik Willem Bogaart ,  Simon Reinald Huisman

IPC: G03B27/52 ,  G03B27/68 ,  G03F9/00 ,  G03F7/20

Abstract: An alignment system, method and lithographic apparatus are provided for determining the position of an alignment mark, the alignment system comprising a first system configured to produce two overlapping images of the alignment mark that are rotated by around 180 degrees with respect to one another, and a second system configured to determine the position of the alignment mark from a spatial distribution of an intensity of the two overlapping images.