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    METHOD OF FABRICATING THREE-DIMENSIONAL PATTERNED STRUCTURE USING IMPRINTING LITHOGRAPHY PROCESS AND PHOTO LITHOGRAPHY PROCESS
    131.
    发明申请
    METHOD OF FABRICATING THREE-DIMENSIONAL PATTERNED STRUCTURE USING IMPRINTING LITHOGRAPHY PROCESS AND PHOTO LITHOGRAPHY PROCESS 审中-公开
    使用印刷光刻工艺制作三维图案结构的方法和照片平版印刷方法

    公开(公告)号：WO2009069858A1

    公开(公告)日：2009-06-04

    申请号：PCT/KR2008/001138

    申请日：2008-02-27

    Applicant: INHA-INDUSTRY PARTNERSHIP INSTITUTE ,  PARK, Se Geun ,  KIM, Han Hyoung

    Inventor： PARK, Se Geun ,  KIM, Han Hyoung

    IPC: H01L21/00 ,  H01L21/027

    CPC classification number: H01L21/0273 ,  B81C1/00031 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    Abstract: Disclosed herein is a method of fabricating a three-dimensional patterned structure using an imprint lithography process and a photolithography process, in which the height of a residual photoresist layer, which is problematic to control, is controlled by controlling only a process time in an imprint lithography process, and then a photolithography process is additionally performed, thus fabricating a new three-dimensional patterned structure without performing an additional process for removing the residual photoresist layer. The method of fabricating a three-dimensional patterned structure includes: (a) depositing a photoresist on a substrate through spin coating; (b) imprinting the deposited photoresist using a mold having a predetermined pattern at a predetermined temperature and pressure to fabricated a structure; and (c) providing a photo mask having a predetermined pattern on the fabricated structure and then exposing and developing the structure to form a three-dimensional patterned structure having a specific pattern.

    Abstract translation: 本文公开了使用压印光刻工艺和光刻工艺制造三维图案化结构的方法，其中通过仅控制压印中的处理时间来控制对控制有问题的残留光致抗蚀剂层的高度 然后再进行光刻工艺，由此制造新的三维图案结构，而不需要额外的去除残余光致抗蚀剂层的工艺。 制造三维图案结构的方法包括：（a）通过旋涂在衬底上沉积光致抗蚀剂; （b）使用具有预定图案的模具在预定温度和压力下印刷沉积的光致抗蚀剂以制造结构; 和（c）在所制造的结构上提供具有预定图案的光掩模，然后曝光和显影该结构以形成具有特定图案的三维图案结构。

    METHODS FOR PATTERNING ELECTRONIC ELEMENTS AND FABRICATING MOLDS
    132.
    发明申请
    METHODS FOR PATTERNING ELECTRONIC ELEMENTS AND FABRICATING MOLDS 审中-公开
    用于绘制电子元件和制作商品的方法

    公开(公告)号：WO2009039174A1

    公开(公告)日：2009-03-26

    申请号：PCT/US2008/076678

    申请日：2008-09-17

    Applicant: ENDOTRONIX, INC. ,  ROWLAND, Harry D.

    Inventor： ROWLAND, Harry D.

    IPC: B05C5/00 ,  H01L51/40

    CPC classification number: G03F7/0002 ,  B81C1/00031 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00

    Abstract: A method for patterning a surface includes providing a first layer of mechanically deformable material having a first surface. A second layer of mechanically deformable material is placed on the first surface. At least a portion of the second layer is controllably displaced to form at least one patterned void through the second layer.

    Abstract translation: 用于图案化表面的方法包括提供具有第一表面的可机械可变形材料的第一层。 第二层机械可变形材料放置在第一表面上。 可控地移位第二层的至少一部分以通过第二层形成至少一个图案化的空隙。

    REDUCTION OF A FEATURE DIMENSION IN A NANO-SCALE DEVICE
    133.
    发明申请
    REDUCTION OF A FEATURE DIMENSION IN A NANO-SCALE DEVICE 审中-公开
    减少纳米尺度设备中的特征尺寸

    公开(公告)号：WO2006137860A3

    公开(公告)日：2007-04-19

    申请号：PCT/US2005032910

    申请日：2005-09-13

    Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  SHARMA SHASHANK

    Inventor： SHARMA SHASHANK

    IPC: B81C1/00 ,  G03F7/00

    CPC classification number: G03F7/0002 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/31612

    Abstract: Nano-scale devices (200', 300) and methods (100) provide reduced feature dimensions of features on the devices. A surface of a device substrate (202, 202', 302, 302a) having a pattern of spaced apart first nanowires (202, 202', 304) is consumed (110), such that a dimension of the first nanowires (202', 304) is reduced (100). A second nanowire (224, 324) is formed in a trench or gap (306) between adjacent ones of the first nanowires (202, 202', 304), such that the nano-scale device includes a set of features that includes the first nanowires (202', 304) with the reduced dimension and the second nanowire (224, 324) spaced from the adjacent first nanowires by sub-trenches (226, 326).

    Abstract translation: 纳米级设备（200'，300）和方法（100）提供了设备上特征的减小的特征尺寸。 具有间隔开的第一纳米线（202,202'，304）的图案的器件衬底（202,202'，302,302a）的表面被消耗（110），使得第一纳米线（202'，302） 304）减少（100）。 第二纳米线（224,324）形成在相邻的第一纳米线（202,202'，304）之间的沟槽或间隙（306）中，使得纳米级器件包括一组特征，其包括第一纳米线 具有减小的尺寸的纳米线（202'，304）和通过子沟槽（226,326）与相邻的第一纳米线间隔开的第二纳米线（224,324）。

    REDUCTION OF A FEATURE DIMENSION IN A NANO-SCALE DEVICE
    134.
    发明申请
    REDUCTION OF A FEATURE DIMENSION IN A NANO-SCALE DEVICE 审中-公开
    减少纳米尺度设备中的特征尺寸

    公开(公告)号：WO2006137860A2

    公开(公告)日：2006-12-28

    申请号：PCT/US2005/032910

    申请日：2005-09-13

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  SHARMA, Shashank

    Inventor： SHARMA, Shashank

    IPC: B81C1/00

    CPC classification number: G03F7/0002 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/31612

    Abstract: Nano-scale devices (200', 300) and methods (100) provide reduced feature dimensions of features on the devices. A surface of a device substrate (202, 202', 302, 302a) having a pattern of spaced apart first nanowires (202, 202', 304) is consumed (110), such that a dimension of the first nanowires (202', 304) is reduced (100). A second nanowire (224, 324) is formed in a trench or gap (306) between adjacent ones of the first nanowires (202, 202', 304), such that the nano-scale device includes a set of features that includes the first nanowires (202', 304) with the reduced dimension and the second nanowire (224, 324) spaced from the adjacent first nanowires by sub-trenches (226, 326).

    Abstract translation: 纳米级设备（200'，300）和方法（100）提供了设备上特征的减小的特征尺寸。 具有间隔开的第一纳米线（202,202'，304）的图案的器件衬底（202,202'，302,302a）的表面被消耗（110），使得第一纳米线（202'，302） 304）减少（100）。 第二纳米线（224,324）形成在相邻的第一纳米线（202,202'，304）之间的沟槽或间隙（306）中，使得纳米级器件包括一组特征，其包括第一纳米线 具有减小的尺寸的纳米线（202'，304）和通过子沟槽（226,326）与相邻的第一纳米线间隔开的第二纳米线（224,324）。

    THIN CAPPING FOR MEMS DEVICES
    136.
    发明申请
    THIN CAPPING FOR MEMS DEVICES 审中-公开
    薄膜封装用于MEMS器件

    公开(公告)号：WO2015030657A1

    公开(公告)日：2015-03-05

    申请号：PCT/SE2014/050973

    申请日：2014-08-26

    Applicant: SILEX MICROSYSTEMS AB

    Inventor： KÄLVESTEN, Edvard ,  EBEFORS, Thorbjörn ,  SVEDIN, Niklas

    IPC: B81B7/00 ,  B81C1/00 ,  H01L21/50 ,  H01L23/48

    CPC classification number: B81B7/007 ,  B81B2201/01 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/0153 ,  B81C2201/036 ,  B81C2203/0109 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/08 ,  H01L24/94 ,  H01L2924/16235

    Abstract: The invention relates to a device comprising a base substrate(700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from said component (702). It also comprises spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via said spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) comprises vias (710) comprising metal for providing electrical connection through said capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

    Abstract translation: 本发明涉及一种包括具有附着到其上的微型部件（702）的基底（700）的装置。 适当地，它设置有用于向所述部件（702）传导信号和从所述部件（702）传导信号的路由元件（704）。 它还包括间隔件（706），其也可以用作垂直路线信号的导电结构。 优选通过共晶接合，通过所述间隔件（706），在基底基板（700）上方设有玻璃材料的封盖结构（708），其中封盖结构（708）包括通孔（710），其包括金属 用于通过所述封盖结构提供电连接。 通孔可以通过冲压/压制方法制成，在加热下需要加压针，使玻璃软化并施加压力至玻璃中预定的深度。 然而，其他方法是可行的，例如钻孔，蚀刻，爆破。

    METHOD AND COMPOSITION FOR ADHERING MATERIALS TOGETHER
    139.
    发明申请
    METHOD AND COMPOSITION FOR ADHERING MATERIALS TOGETHER 审中-公开
    将材料混合在一起的方法和组合物

    公开(公告)号：WO2007050133A2

    公开(公告)日：2007-05-03

    申请号：PCT/US2006/021948

    申请日：2006-06-05

    Applicant: MOLECULAR IMPRINTS, INC.

    Inventor： XU, Frank, Y.

    IPC: H05B6/68

    CPC classification number: B32B37/14 ,  B32B38/06 ,  B81C1/0046 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  C08L59/00 ,  C09J5/00 ,  C09J2205/31 ,  C09J2451/00 ,  G03F7/0002 ,  Y10T156/10

    Abstract: The present invention provides a method adhering a layer to a substrate that features defining first and second interfaces by having a composition present between the layer and the substrate that forms covalent bonds to the layer and adheres to the substrate employing one or more of covalent bonds, ionic bonds and Van der Waals forces. In this manner, the strength of the adhering force of the layer to the composition is assured to be stronger than the adhering force of the layer to the composition formed from a predetermined adhering mechanism, i.e., an adhering mechanism that does not include covalent bonding. Additionally, the present invention is directed to a composition of adhering together first and second materials. The composition features a multi-functional reactive compound that includes a backbone group and first and second functional groups; a cross-linker, and a catalyst. The first functional group is responsive to a first actinic energy to form cross-linked molecules and to adhere a subset of the cross-linked molecules to the first material. The second functional group is responsive to a second actinic energy, differing from the first actinic energy to adhere to the second material.

    Abstract translation: 本发明提供了一种将层粘合到基底上的方法，所述基底通过在所述层和所述基底之间存在组合物而形成限定第一和第二界面的特征，所述组合物形成与所述层的共价键并粘附到所述基底 采用一种或多种共价键，离子键和范德华力。 以这种方式，确保该层对组合物的粘合力的强度比该层对由预定粘合机构即不包括共价键合的粘合机构形成的组合物的粘合力强。 此外，本发明涉及将第一和第二材料粘合在一起的组合物。 该组合物的特征在于包含主链基团和第一和第二官能团的多官能反应性化合物; 交联剂和催化剂。 第一官能团响应于第一光化能量以形成交联分子并将交联分子的子集粘附至第一材料。 第二官能团响应于第二光化能，与第一光化能不同，以粘附到第二材料。

    微細パターン形成方法
    140.
    发明申请
    微細パターン形成方法 审中-公开
    形成精细图案的方法

    公开(公告)号：WO2007026605A1

    公开(公告)日：2007-03-08

    申请号：PCT/JP2006/316682

    申请日：2006-08-25

    Applicant: 独立行政法人理化学研究所 ,  沖仲 元毅 ,  塚越 一仁 ,  青柳 克信

    Inventor： 沖仲 元毅 ,  塚越 一仁 ,  青柳 克信

    IPC: B29C59/02 ,  B29C33/38 ,  B82B3/00 ,  H01L21/027 ,  B29K83/00

    CPC classification number: G03F7/0002 ,  B81C1/00031 ,  B81C1/00111 ,  B81C2201/0152 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/31 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76817

    Abstract: A method of fine-pattern formation in which in forming a pattern, a fine pattern formed in a mold can be transferred to a patterning material in a short time at a low temperature and low pressure and, after the transfer of the fine pattern to the patterning material, the fine pattern formed in the patterning material does not readily deform. The method for fine-pattern formation comprises: a first step in which a mold having a fine structure with recesses/protrusions is pressed against a patterning material comprising a polysilane; a second step in which the patterning material is irradiated with ultraviolet to photooxidize the patterning material; a third step in which the pressing of the mold against the patterning material is relieved and the mold is drawn from the patterning material; and a fourth step in which that surface of the patterning material to which the fine pattern has been transferred is irradiated with an oxygen plasma to oxidize the surface.

    Abstract translation: 精细图案形成的方法，其中在形成图案时，在模具中形成的精细图案可以在低温低压下在短时间内转印到图案形成材料上，并且在精细图案转印到 图案形成材料中形成的微细图案不容易变形。 精细图案形成方法包括：第一步骤，其中具有凹陷/突起的精细结构的模具被压在包含聚硅烷的图案材料上; 第二步骤，其中图案形成材料被紫外线照射以对图案材料进行光氧化; 将模具压靠在图案形成材料上的第三步骤被释放并且模具从图形材料中拉出; 以及第四步骤，其中已经转印有精细图案的图案形成材料的表面用氧等离子体照射以氧化该表面。

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