中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

269 records (took 0.02 seconds)

    Photoemitter, electron tube, and photodetector
    142.
    发明公开
    Photoemitter, electron tube, and photodetector 失效
    Photoemitter，Elektronenröhre，und Photodetektor。

    公开(公告)号：EP0642147A1

    公开(公告)日：1995-03-08

    申请号：EP94306434.5

    申请日：1994-09-01

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Niigaki, Minoru, c/o Hamamatsu Photonics K.K. ,  Hirohata, Toru, c/o Hamamatsu Photonics K.K. ,  Ihara, Tuneo, c/o Hamamatsu Photonics K.K. ,  Yamada, Masami, c/o Hamamatsu Photonics K.K.

    IPC: H01J1/34

    CPC classification number: H01J1/34 ,  H01J2201/3423

    Abstract: The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer (1) for absorbing incident photons to excite photoelectrons, an insulator layer (3) layered on one surface of the photon absorbing layer, a lead electrode (4) layered on the insulator layer, and a contact (2) formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode (4) and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.

    Abstract translation: 本发明提供了光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的发光装置。 本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层（1），层叠在光子吸收层的一个表面上的绝缘体层（3），层叠在光子吸收层 所述绝缘体层和形成在所述光子吸收层的另一个表面上的触点（2），以在所述引线电极（4）与所述光子吸收层的另一表面之间施加预定的极性电压，由此由所述入射激发的所述光电子 进入光子吸收层并向一侧移动的光子通过在引线电极和一个表面之间形成的电场被预定极性电压发射。

    Electron emitter
    144.
    发明公开
    Electron emitter 失效
    电子发射器

    公开(公告)号：EP0329432A3

    公开(公告)日：1990-09-05

    申请号：EP89301475.3

    申请日：1989-02-16

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Eguchi, Ken ,  Kawada, Haruki ,  Sakai, Kunihiro ,  Matsuda, Hiroshi ,  Takimoto, Kiyoshi ,  Kawade, Hisaaki ,  Morikawa, Yuko ,  Yanagisawa, Yoshihiro

    IPC: H01J1/30

    CPC classification number: H01J1/34 ,  H01J1/30 ,  H01J2201/3423

    Abstract: An electron emitting device, comprising; a first electrode (4) provided on a substrate; a first layer (1) provided on said electrode and capable of undergoing transition from an electrically high resistance state to a low resistance state when irradiated by a radiant ray (L); and a conductive layer (3), an insulating layer (2) and further a second electrode (5), laminated on said first layer, and
    an electron generator, comprising the electron emitting device, means for applying an electric field to said device, and means for irradiating a radiant ray on the device, and also
    a method for driving the electron emitting device are provided.

    Photocathode à amplification interne
    145.
    发明公开
    Photocathode à amplification interne 失效
    光阴带内置放大。

    公开(公告)号：EP0230818A1

    公开(公告)日：1987-08-05

    申请号：EP86402820.4

    申请日：1986-12-16

    Applicant: THOMSON-CSF

    Inventor： Weisbuch, Claude ,  Munier, Bernard ,  De Groot, Paul ,  Moiroud, Guy ,  Henry, Yves

    IPC: H01J1/34

    CPC classification number: H01J1/34 ,  H01J2201/3423

    Abstract: L'invention concerne une photocathode pour tubes de prise de vues de télévision ou tubes intensificateurs d'image. Dans un exemple de réalisation cette photocathode comporte :
    - Une couche transparente (1) ;
    - Une couche d'absorption (2) dont la largeur de bande inter­dite est telle qu'elle convertit en paires électron-trou les photons (8) de la lumière à détecter ;
    - Une couche (3) dite de multiplication des électrons, ayant une composition non uniforme procurant une largeur de bande interdite variable qui permet une ionisation par impact, sans bruit ;
    - Une couche (4) dite couche de transport ;
    - Une électrode de polarisation (5), permettant d'accélérer les électrons libérés par les photons, pour les multiplier par ionisation dans la couche de multiplication (4) ;
    - Une couche (6) procurant une affinité électronique négative pour émettre des électrons (7) dans le vide.
    Application aux caméras de télévision et aux tubes intensifica­teurs d'image.

    UV photocathode
    146.
    发明公开
    UV photocathode 失效
    紫外线光刻胶

    公开(公告)号：EP0202637A3

    公开(公告)日：1987-01-21

    申请号：EP86106758

    申请日：1986-05-17

    Applicant: HONEYWELL INC.

    Inventor： Khan, M. Asif ,  Schulze, Richard G.

    IPC: H01J01/34 ,  H01J09/12

    CPC classification number: H01J1/34 ,  H01J2201/3423

    Abstract: A high efficiency UV responsive negative electron affinity photocathode with the long wavelength cutoff tunable over the wavelength from 200 to 300nm is based on Al x Ga 1-x N, Negative electron affinity photocathodes for sharply enhanced photoemission yield can be formed by applying a layer of cesium (15) to the surface of Al x Ga 1-x N (14) for which the Fermi energy level is appropriately positioned (Figure 1).

    Abstract translation: 基于AlxGa1-xN，具有长波长截止频率的高效紫外响应负电子亲和光电阴极可以在从差分200到差分300nm的波长下调谐。 可以通过在适当定位费米能级的Al x Ga 1-x N的表面上施加铯层来形成用于急剧提高的光电转换产率的负电子亲和光电阴极。

    Electron Gun, Electron Beam Applying Device, and Irradiation Position Shifting Method
    148.
    发明公开
    Electron Gun, Electron Beam Applying Device, and Irradiation Position Shifting Method 审中-公开

    公开(公告)号：US20240222062A1

    公开(公告)日：2024-07-04

    申请号：US18556076

    申请日：2022-03-25

    Applicant: Photo electron Soul, Inc.

    Inventor： Tomohiro NISHITANI

    IPC: H01J37/147 ,  H01J1/34 ,  H01J37/073

    CPC classification number: H01J37/1471 ,  H01J1/34 ,  H01J37/073 ,  H01J2201/3423 ,  H01J2237/0203

    Abstract: Provided are an electron gun that can extend the lifetime of a photocathode, an electron beam applicator on which the electron gun is mounted, and an irradiation position moving method. This object can be achieved by an electron gun including: a light source; a photocathode that emits an electron beam in response to receiving light from the light source; an anode; a motion device that moves excitation light irradiating the photocathode; and a control unit, the control unit controls the motion device to move an irradiation position of the excitation light from a position Rn (n is a natural number) on the photocathode to a position Rn+1 outside an excitation light irradiation-caused deteriorated range associated with the position Rn, the excitation light irradiation-caused deteriorated range is a range where the photocathode is deteriorated due to irradiation with the excitation light, and the distance between the center of a spot of the excitation light at the position Rn and the center of a spot of the excitation light at the position Rn+1 is at least three or more times a spot diameter of the excitation light on the photocathode.

    MULTIBAND PHOTOCATHODE AND ASSOCIATED DETECTOR
    150.
    发明申请
    MULTIBAND PHOTOCATHODE AND ASSOCIATED DETECTOR 审中-公开

    公开(公告)号：US20180096829A1

    公开(公告)日：2018-04-05

    申请号：US15564880

    申请日：2016-04-06

    Applicant: Photonis France

    Inventor： Moustapha Conde ,  Justin Foltz

    IPC: H01J40/06 ,  H01J40/16

    CPC classification number: H01J40/06 ,  H01J1/34 ,  H01J40/16 ,  H01J2201/3423

    Abstract: The invention relates to a photocathode including an input window (210) suitable for receiving a flow of incident photons, and an active layer (230), the active layer consisting of a plurality of elementary layers (2301, 2302) made of semiconductor materials having decreasing forbidden bandwidths in the direction of the flow of incident photons. The surface of the photocathode opposite the input window is structured so that each elementary layer of the active layer has its own photoelectric emission surface (2401, 2402). By choosing the semiconductor materials of the elementary layers, it is possible to obtain an image which has high sensitivity in both the visible spectrum and the near infrared.

Patent Agency Ranking