公开(公告)号：EP2068345A1

公开(公告)日：2009-06-10

申请号：EP07023587.4

申请日：2007-12-05

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： Banzhof, Helmut ,  Frosien, Jürgen ,  Winkler, Dieter

IPC: H01J37/28 ,  H01J37/26 ,  H01J37/08

CPC classification number: H01J37/04 ,  H01J37/28 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0492 ,  H01J2237/08 ,  H01J2237/0807

Abstract: A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method being adapted for high imaging resolutions below 1 nm includes emitting an ion beam from a gas field ion source, providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.

Abstract translation: 描述了一种操作具有气体场离子源的聚焦离子束装置的方法。 根据一些实施例，适用于低于1nm的高成像分辨率的方法包括从气体场离子源发射离子束，在离子束冲击1keV至4keV的样品上提供最终的束能，以及 成像样本。

公开(公告)号：EP1719147A2

公开(公告)日：2006-11-08

申请号：EP05738849.8

申请日：2005-02-22

Applicant: VEECO INSTRUMENTS INC.

Inventor： BURTNER, David, Matthew ,  TOWNSEND, Scott, A. ,  SIEGFRIED, Daniel, E. ,  ZHURIN, Viacheslav, V.

IPC: H01J7/24

CPC classification number: H01J27/04 ,  H01J2237/002 ,  H01J2237/08

Abstract: An ion source (400) is cooled using a cooling plate (412) that is separate and independent of the anode (408). The coolin plate (412) forms a coolant cavity (414) through which a fluid coolant (e.g., liquid or gas) can flow to cool the anode. In such configurations, a magnet may be thermally protected by the cooling plate. A thermally conductive material in a thermal transfer interface component can enhance the cooling capacity of the cooling plate. Combining these structures into an anode subassembly and magnet subassembly can also facilitate assembly and maintenance of the ion source.

公开(公告)号：EP1105908B1

公开(公告)日：2005-03-02

申请号：EP99928079.5

申请日：1999-06-23

Applicant: Applied Materials, Inc.

Inventor： MURRELL, Adrian, John ,  COLLART, Erik, Jan, Hilda ,  HARRISON, Bernard, Francis ,  AL-BAYATI, Amir ,  BURGESS, Chris James Sydney ,  ARMOUR, David ,  HOLMES, Andrew ,  POVALL, Simon ,  ARNOLD, Drew ,  BURFIELD, Paul Anthony

IPC: H01J27/02 ,  H01J37/08

CPC classification number: H01J27/022 ,  H01J2237/08 ,  H01J2237/31701

Abstract: An ion beam generation apparatus comprising an ion source (20) for generating ions, and a tetrode extraction assembly (11) comprising four electrodes for extracting and accelerating ions from the ion source. The extraction assembly comprises a source electrode (22) at the potential of the ion source, an extraction electrode (23) adjacent to the source electrode to extract ions from the ion source (20), a ground electrode (25), and a suppression electrode (24) between the extraction electrode and the ground electrode. Each electrode has an aperture to allow the ion beam to pass therethrough. The gap between the extraction (23) and suppression (24) electrodes is variable in the direction of ion beam travel.

公开(公告)号：EP1506559A1

公开(公告)日：2005-02-16

申请号：EP03755430.0

申请日：2003-05-22

Applicant: Varian Semiconductor Equipment Associates Inc.

Inventor： MACIEJOWSKI, Peter, E. ,  OLSON, Joseph, C. ,  CHANG, Shengwu ,  PEDERSEN, Bjorn, O. ,  KLOS, Leo, V., Jr. ,  DISTASO, Daniel ,  BERGERON, Curt, D.

IPC: H01J1/26 ,  H01J27/08 ,  H01J1/20 ,  H01J27/02

CPC classification number: H01J27/08 ,  H01J27/022 ,  H01J2237/08 ,  H01J2237/31701

Abstract: An indirectly heated cathode ion source includes an arc chamber housing that defines an arc chamber, an indirectly heated cathode and a filament for heating the cathode. The cathode may include an emitting portion having a front surface, a rear surface and a periphery, a support rod attached to the rear surface of the emitting portion, and a skirt extending from the periphery of the emitting portion. A cathode assembly may include the cathode, a filament and a clamp assembly for mounting the cathode and the filament in a fixed spatial relationship and for conducting electrical energy to the cathode and the filament. The filament is positioned in a cavity defined by the emitting portion and the skirt of the cathode. The ion source may include a shield for inhibiting escape of electrons and plasma from a region outside the arc hamber in proximity to the filament and the cathode.

公开(公告)号：EP0851453B1

公开(公告)日：2003-08-06

申请号：EP97310255.1

申请日：1997-12-16

Applicant: Axcelis Technologies, Inc.

Inventor： Horsky, Thomas Neil ,  Reynolds, William Edward ,  Cloutier, Richard Maurice

IPC: H01J27/14 ,  H01J37/08 ,  H01J37/317 ,  H01J1/20 ,  H01J27/20

CPC classification number: H01J27/08 ,  H01J2237/08 ,  H01J2237/31701

公开(公告)号：EP0956375A1

公开(公告)日：1999-11-17

申请号：EP96918398.0

申请日：1996-06-10

Applicant: Corning Oca Corporation

Inventor： SCOBEY, Michael, A.

IPC: C23C14 ,  H01J37

CPC classification number: C23C14/0052 ,  C23C14/0063 ,  H01J2237/08

Abstract: A method and apparatus for producing optical films on substrates having extremely high packing densities of the same quality as those films produced by ion beam sputtering including a vacuum chamber with a conventional magnetron sputtering system and unusually high speed vaccum pump means. The low pressure of inert gas created by said high speed vacuum pump means being in the range of 5 x 10-5 Torr to 2.0 x 10-4 Torr and the magnetron sputtering system being at least 20'' from said substrates. A gas manifold around the magnetron and target material confines the inert working gas in the vicinity of the magnetron and as the gas diffuses and expands into the chamber the high speed vacuum pump means removes the expanded gas from the chamber at the high speed. An ion gun directs ionized reactant gas toward the substrates which has the effect of improving film stoichiometry as well as reducing reactant gas at the magnetron. Multiple magnetron assemblies, multiple target materials and compound target materials may be used.

Abstract translation: 一种在衬底上制造光学薄膜的方法和设备，该方法和设备具有与通过离子束溅射生产的薄膜具有相同质量的极高填充密度，该薄膜包括具有常规磁控溅射系统的真空室和非常高速的真空泵装置。 由所述高速真空泵装置产生的惰性气体低压在5×10-5乇至2.0×10-4乇的范围内，而磁控溅射系统距离所述基片至少20“。 围绕磁控管和目标材料的气体歧管将惰性工作气体限制在磁控管附近，并且随着气体扩散并扩展到腔室中，高速真空泵装置以高速从腔室中去除膨胀的气体。 离子枪将离子化的反应物气体导向衬底，这具有改善膜化学计量学的作用并减少磁控管处的反应物气体。 可以使用多个磁控管组件，多种靶材料和复合靶材料。

公开(公告)号：EP0751972A4

公开(公告)日：1999-06-16

申请号：EP96910295

申请日：1996-01-23

Applicant: SANDIA CORP

Inventor： STINNETT REGAN W ,  VANDEVENDER J PACE

IPC: C08J3/28 ,  B05D3/06 ,  B29C35/08 ,  B29C59/16 ,  B44C1/22 ,  C08F2/46 ,  C08J7/12 ,  G21K5/00 ,  H01J27/14 ,  H01J37/317

CPC classification number: C08J7/123 ,  B29C59/16 ,  B29C2035/0872 ,  H01J27/14 ,  H01J37/317 ,  H01J2237/08 ,  H01J2237/3165 ,  H01J2237/31701

Abstract: A polymer surface and near surface treatment process produced by irradiation with high energy particle beams. The process is preferably implemented with pulsed ion beams. The process alters the chemical and mechanical properties of the polymer surface in a manner useful for a wide range of commercial applications.

公开(公告)号：EP0890657A1

公开(公告)日：1999-01-13

申请号：EP98305259.8

申请日：1998-07-02

Applicant: EATON CORPORATION

Inventor： Gwinn, Matthew Charles

IPC: C23C14/48 ,  H01J37/30

CPC classification number: C23C14/48 ,  H01J37/3171 ,  H01J2237/08

Abstract: The present invention provides for an ion implantation system that employs an ion source (12) for ionizing and implanting into a substrate (S) a noble diluent gas and a particular dopant gas. The noble diluent gas of the present invention preferably does not react with the dopant gas, or with dopant residue which coats the walls of the ionization chamber (24) of the ion source (12), thus allowing the ion source to be used for accurate, stable low dose implants. Additionally, the noble diluent gas does not introduce conductivity altering ions, or impurities, into the substrate (S). Consequently, the dosage of the dopant ions implanted into the substrate can be precisely controlled, especially in low dose applications.

Abstract translation: 本发明提供了一种离子注入系统，其使用离子源（12）将离子化和注入基质（S）稀有稀释气体和特定掺杂气体。 本发明的稀释稀释气体优选不与掺杂剂气体反应，或者与涂覆离子源（12）的电离室（24）的壁的掺杂剂残余物反应，从而允许离子源用于准确 ，稳定的低剂量植入物。 此外，稀有稀释气体不会将导电性改变离子或杂质引入衬底（S）。 因此，可以精确地控制植入衬底中的掺杂剂离子的剂量，特别是在低剂量应用中。

公开(公告)号：EP0729640A4

公开(公告)日：1997-07-16

申请号：EP95901916

申请日：1994-11-16

Applicant: SANDIA CORP

Inventor： BLOOMQUIST DOUGLAS D ,  BUCHHEIT RUDY ,  GREENLY JOHN B ,  MCINTYRE DALE C ,  NEAU EUGENE L ,  STINNETT REGAN W

IPC: B29C35/08 ,  B29C59/16 ,  C23C8/36 ,  C23C14/48 ,  G21K5/04 ,  H01J3/04 ,  H01J27/00 ,  H01J27/08 ,  H01J27/14 ,  H01J37/08 ,  H01L21/48

CPC classification number: C08J7/123 ,  B29C59/16 ,  B29C2035/0872 ,  C23C8/36 ,  C23C14/48 ,  H01J27/14 ,  H01J2237/08 ,  H01J2237/31701

Abstract: A method and apparatus for treating material surfaces (13) using a repetitively pulsed ion beam (11). In particular, the treatment is tailored by adjusting treatment parameters of a pulsed ion beam (11) to a duration less than or equal to 1000 ns and a repetition rate of less than 1 Hz.

公开(公告)号：EP0583473A1

公开(公告)日：1994-02-23

申请号：EP92911913.9

申请日：1992-04-23

Applicant: NAUCHNO-PROIZVODSTVENNOE PREDPRIVATIE "NOVATEKH"

Inventor： SABLEV, Leonid Pavlovich ,  ANDREEV, Anatoly Afanasievich ,  GRIGORIEV, Sergei Nikolaevich ,  METEL, Alexandr Sergeevich

IPC: C23C14/00 ,  C23C14/32 ,  C23C14/40

CPC classification number: H01J37/32055 ,  C23C8/36 ,  C23C14/022 ,  C23C14/325 ,  H01J27/08 ,  H01J37/32623 ,  H01J37/34 ,  H01J2237/08 ,  H01J2237/3387

Abstract: A method for treatment of articles in gas-discharge plasma consists in that between an anode (3) and an integrally cold cathode (2) a two stage vacuum-arc discharge is generated with mutually separated metal-gas and gas stage of the plasma. The gas stage of the plasma is obtained by means of ionization of the working gas with ions separated from the metal-gas stage of the plasma. Then the treated article (5) is heated up to the working temperature and conditioned within that temperature interval. For that purpose the device is provided with a means (13) which is located in the zone of the cathode (2), is impenetrable for the metal ions generated by the cathode (2) and intended for separation of the electrons from the metal-gas stage of the plasma. In a particular case the means (13) consists of a set of V-shaped plates (14).

Abstract translation: 用于处理气体放电等离子体中的制品的方法在于阳极（3）和整体冷阴极（2）之间的两个阶段的真空电弧放电是通过相互分离的等离子体的金属气体和气体阶段产生的。 通过从等离子体的金属 - 气相分离的离子与工作气体的离子化获得等离子体的气相。 然后将经处理的物品（5）加热至工作温度并在该温度间隔内调节。 为此目的，该装置设置有位于阴极（2）的区域中的装置（13），对于由阴极（2）产生的金属离子是不可穿透的，并且用于将电子与金属 - 等离子体的气相。 在特定情况下，装置（13）由一组V形板（14）组成。