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公开(公告)号：KR1020120034146A
公开(公告)日：2012-04-10
申请号：KR1020100083058
申请日：2010-08-26
Applicant: 한국전자통신연구원
IPC: H01L51/52
CPC classification number: H05B33/14 , H01L25/048 , H01L51/5265 , H01L2251/308 , H01L2251/5323 , H01L2924/0002 , H01L51/50 , H01L2924/00
Abstract: PURPOSE: An organic electro luminescence device is provided to supply a white organic electro luminescence device having the stable high brightness and high external quantum efficiency by adopting a resonance structure to one device from bonded two devices. CONSTITUTION: A first device(110) comprises a first substrate(112), a first electrode(114) successively laminated on the first substrate, a first organic light emitting layer(116), and a second electrode(118). A second device(120) faces the first device while be separated each other. The second device comprises a second substrate(122), a third electrode(124) successively laminated on the second substrate, a second organic light emitting layer(126), and a fourth electrode(128). An adhesive layer(130) sticks the first device and the second device. One of light emitted from the first and the second organic light emitting layers resonates in either the first device or the second device.
Abstract translation: 目的：提供一种有机电致发光器件，通过从结合的两个器件中的一个器件采用谐振结构来提供具有稳定的高亮度和高外部量子效率的白色有机电致发光器件。 构成：第一装置（110）包括第一衬底（112），连续层压在第一衬底上的第一电极（114），第一有机发光层（116）和第二电极（118）。 第二装置（120）面向第一装置同时彼此分离。 第二器件包括第二衬底（122），连续层压在第二衬底上的第三电极（124），第二有机发光层（126）和第四电极（128）。 粘合剂层（130）粘附第一装置和第二装置。 从第一和第二有机发光层发射的光中的一种在第一装置或第二装置中共振。
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公开(公告)号：KR1020120001998A
公开(公告)日：2012-01-05
申请号：KR1020100062659
申请日：2010-06-30
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A light emitting device is provided to prevent problems due to an uneven shape by controlling a shape, a size, and an interval of unevenness. CONSTITUTION: A substrate(100) comprises a first surface and a second surface. The first surface faces the second surface. An unevenness(102) is formed on the upper side of the substrate. A first electrode(104) is formed on the unevenness of the substrate. An organic light emitting layer(106) is formed on the first electrode. A second electrode(108) is formed on the organic light emitting layer.
Abstract translation: 目的：提供一种发光装置，通过控制形状，尺寸和不均匀间隔来防止由于不均匀形状引起的问题。 构成：衬底（100）包括第一表面和第二表面。 第一表面面向第二表面。 在基板的上侧形成有凹凸（102）。 第一电极（104）形成在基板的不平坦部分上。 在第一电极上形成有机发光层（106）。 第二电极（108）形成在有机发光层上。
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公开(公告)号：KR1020110062236A
公开(公告)日：2011-06-10
申请号：KR1020090118895
申请日：2009-12-03
Applicant: 한국전자통신연구원
CPC classification number: H01L51/5275 , H01L51/5253 , H01L51/5268
Abstract: PURPOSE: An organic electroluminescence device and manufacturing method thereof are provided to increase light extraction efficiency by including porous light scattering layer. CONSTITUTION: A porous light scattering layer(530) comprises a plurality of pores and a medium. The porous light scattering layer is formed on a transparent substrate. An anode(540) is formed on the porous light scattering layer. An organic light emitting layer comprises at least one light emitting layer. The organic light emitting layer is formed on the anode. A cathode(560) is formed on the organic light emitting layer. A first light route adjusting layer is formed between the porous light scattering layer and the transparent substrate. A second light route adjusting layer is formed between the porous light scattering layer and the anode.
Abstract translation: 目的：提供一种有机电致发光器件及其制造方法，以通过包括多孔光散射层来提高光提取效率。 构成：多孔光散射层（530）包括多个孔和介质。 多孔光散射层形成在透明基板上。 阳极（540）形成在多孔光散射层上。 有机发光层包括至少一个发光层。 有机发光层形成在阳极上。 在有机发光层上形成阴极（560）。 在多孔光散射层和透明基板之间形成第一光路调整层。 在多孔光散射层和阳极之间形成第二光路调整层。
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公开(公告)号：KR100996644B1
公开(公告)日：2010-11-25
申请号：KR1020080024208
申请日：2008-03-17
Applicant: 한국전자통신연구원
IPC: H01L29/786
Abstract: 본 발명은 ZnO TFT의 제조방법에 관한 것이다. 본 발명에 따른 ZnO TFT의 제조방법은 최적의 공정 조건하에서 아연 전구체와 산소 전구체를 이용하여 원자층 증착법을 통해 이상적인 조성의 ZnO 반도체막을 형성하는 단계를 포함하며, 또한 원자층 증착법을 이용하여 플라즈마 발생을 포함하는 공정을 사용하지 않는 공정으로 일차 절연막을 형성함에 따라 소자의 성능, 특히 이동도와 신뢰성을 개선시킬 수 있다.
산화아연, 원자층 증착법, 반도체막, 일차 절연막-
Patent Agency Ranking
公开(公告)号：KR1020100006519A
公开(公告)日：2010-01-19
申请号：KR1020080071163
申请日：2008-07-22
Applicant: 한국전자통신연구원
IPC: C04B35/00 , H01B1/08 , H01L21/336 , H01L29/78
CPC classification number: C04B35/00 , H01B1/08 , H01L21/02554 , H01L21/02565 , H01L29/78693
Abstract: PURPOSE: An oxide semiconductor thin film composition is provided to obtain stable and transparent oxide semiconductor thin film having high mobility through low temperature process. CONSTITUTION: An oxide semiconductor thin film composition is amorphous state containing aluminum-containing oxide, zinc-containing oxide, indium-containing oxide, and tin-containing oxide. The ratio of the metal components is 30-95at% of zinc, 1-65at% of indium, 1-50at% of tin and remaining amount of aluminum.
Abstract translation: 目的：提供氧化物半导体薄膜组合物以获得通过低温处理具有高迁移率的稳定且透明的氧化物半导体薄膜。 构成：氧化物半导体薄膜组合物是含有含氧氧化物，含锌氧化物，含铟氧化物和含锡氧化物的非晶态。 金属成分的比例为锌的30-95原子％，铟的1-65原子％，锡的1-50原子％和铝的剩余量。
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公开(公告)号：KR1020090099140A
公开(公告)日：2009-09-22
申请号：KR1020080024208
申请日：2008-03-17
Applicant: 한국전자통신연구원
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L21/02554
Abstract: A manufacturing method of a ZnO TFT is provided to reduce a defect inside a semiconductor thin film by controlling a deposition temperature after selecting oxygen plasma or ozone as oxygen precursor. A ZnO semiconductor film(30) is formed on a substrate(10) through an atomic layer deposition method using Zn precursor and ozone at a temperature of 250~350°C or Zn precursor and oxygen plasma at a temperature of 150~250°C. An insulation film(40) is formed on a top part of the ZnO semiconductor film through the atomic layer deposition method using the oxygen precursor selected from ozone or water at a temperature less than 250°C. A gate electrode(50) is formed on a top part of the insulation film. The ZnO semiconductor film has thickness of 5~40nm. The substrate is a substrate in which a source/drain electrode(20) is formed and a substrate in which the gate electrode and the insulation film are formed.
Abstract translation: 提供ZnO薄膜晶体管的制造方法，通过在选择氧等离子体或臭氧作为氧前体后控制沉积温度来减少半导体薄膜内的缺陷。 在250〜350℃的温度下，使用Zn前体和臭氧，在150〜250℃的温度下，通过Zn前体和氧等离子体，通过原子层沉积法在基板（10）上形成ZnO半导体膜（30） 。 通过使用在低于250℃的温度下使用选自臭氧或水的氧前体的原子层沉积方法，在ZnO半导体膜的顶部上形成绝缘膜（40）。 在绝缘膜的顶部形成有栅电极（50）。 ZnO半导体膜的厚度为5〜40nm。 基板是形成源极/漏极（20）的基板和形成有栅电极和绝缘膜的基板。
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公开(公告)号：KR100917598B1
公开(公告)日：2009-09-17
申请号：KR1020060117220
申请日：2006-11-24
Applicant: 한국전자통신연구원
IPC: H01L27/146
Abstract: 본 발명은 밀착형 이미지 센서에 관한 것으로, 자체 발광 기능을 지원하여 센서 표면에 밀착된 물체의 이미지를 보다 높은 해상도와 낮은 신호대 잡음비를 가지며 이미지를 획득할 수 있도록 하기 위하여, 기판과, 상기 기판상에 반도체 제조 공정을 통해 형성되어 광을 발생하는 하나 이상의 광 발생부와, 상기 광 발생부와 동일한 반도체 제조 공정을 통해 상기 기판상에 형성되어 피사체로부터 반사된 광량을 감지하여 광전류 또는 광전압을 발생하는 하나 이상의 광 감지부로 이루어지고, 2차원적 어레이로 배치되어 피사체의 2차원적 이미지를 획득하는 복수개의 이미지 픽셀들을 구비하며, 이에 의하여 별도의 백라이트를 구비하지 않아도 되어 이미지 센서의 크기를 획기적으로 감소시켜 줄 뿐 만 아니라 복수개의 이미지 픽셀들 각각의 동작 신뢰성을 증대시켜 높은 해상도와 낮은 신호대 잡음비를 가지는 이미지를 획득할 수 있도록 한다.
밀착형 이미지 센서, 자체 발광, 백라이트-
公开(公告)号：KR100833517B1
公开(公告)日：2008-05-29
申请号：KR1020070043803
申请日：2007-05-04
Applicant: 한국전자통신연구원
IPC: H01B1/02
CPC classification number: C01B19/002 , C01P2002/72 , C01P2006/60
Abstract: A photoelectric material, a method for preparing the photoelectric material, and a photoelectric device containing the photoelectric material are provided to obtain excellent photoelectric effect without using rare indium or harmful cadmium. A photoelectric material is represented by AXYY', wherein A is an element of the group 11; X is an element of the group 15; and Y and Y' are identical or different each other and are an element of the group 16 in the periodic table. Preferably A is copper(Cu), X is arsenic(As), Y is sulfur(S), and Y' is selenium(Se). The photoelectric material is prepared by depositing a first material represented by X2Y3 on a substrate; depositing a second material represented by AY'2 on the first material; and heat treating the first material and the second material.
Abstract translation: 提供光电材料，光电材料的制备方法和含有光电材料的光电装置，以在不使用稀有铟或有害镉的情况下获得优异的光电效应。 光电材料由AXYY'表示，其中A是组11的元素; X是组15的元素; Y和Y'彼此相同或不同，并且是周期表中第16族的元素。 优选A是铜（Cu），X是砷（As），Y是硫（S），Y'是硒（Se）。 通过将由X2Y3表示的第一材料沉积在基板上来制备光电材料; 将由AY'2表示的第二材料沉积在第一材料上; 并对第一材料和第二材料进行热处理。
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公开(公告)号：KR1020080047189A
公开(公告)日：2008-05-28
申请号：KR1020060117220
申请日：2006-11-24
Applicant: 한국전자통신연구원
IPC: H01L27/146
CPC classification number: H01L31/153 , H01L31/08 , H01L31/102 , H01L31/113 , H01L33/0008
Abstract: A contact image sensor is provided to reduce the size of an image sensor without an additional backlight by making a plurality of image pixels generate light by themselves. A plurality of image pixels are arranged as a two-dimensional array type to obtain a two-dimensional image of an object, including a light generating part(20) for generating light and a light detecting part that generate photoelectric current and photoelectric voltage in response to the incident light reflected from the object. The light generating part can include a substrate, a first transparent electrode(21) formed on the substrate, a first semiconductor thin film(22) of a first conductivity type and a second semiconductor thin film(23) of a second conductivity that are formed on the first transparent electrode, and a light emitting diode formed on the second semiconductor thin film. A voltage is applied to the first transparent electrode. The first and second semiconductor thin films generate light when a difference between the photoelectric voltage and a relative voltage is not less than a threshold voltage. The light emitting diode includes a first upper electrode(24) to which the relative voltage is applied.
Abstract translation: 提供接触图像传感器，以通过使多个图像像素自身产生光来减小图像传感器的尺寸，而不需要额外的背光。 将多个图像像素布置为二维阵列类型以获得物体的二维图像，包括用于产生光的光产生部分（20）和产生光电流的光检测部分和响应中的光电压 对物体反射的入射光。 光产生部分可以包括基板，形成在基板上的第一透明电极（21），形成第一导电类型的第一半导体薄膜（22）和形成第二导电类型的第二半导体薄膜（23） 在第一透明电极上，以及形成在第二半导体薄膜上的发光二极管。 向第一透明电极施加电压。 当光电压和相对电压之间的差不小于阈值电压时，第一和第二半导体薄膜产生光。 发光二极管包括施加相对电压的第一上电极（24）。
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