公开(公告)号：JP2004210922A

公开(公告)日：2004-07-29

申请号：JP2002381072

申请日：2002-12-27

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： CHIBA TAKASHI ,  HAYASHI AKIHIRO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08G77/24 ,  C08G77/48 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a new polysiloxane having high transparency at ≤193 nm wave length, and excellent resistance to dry-etching, especially excellent resistance to the environment; to provide a method for producing the polysiloxane; and to provide a radiation-sensitive resin composition containing the polysiloxane. SOLUTION: The polysiloxane has a structural unit represented by formula (I), and a structural unit represented by formulas (II) and/or (III). (In the formulas, Y is a divalent hydrocarbon group having a cyclic skeleton, or a substituted derivative thereof; R 1 is a monovalent organic group having an acid dissociable group; R 2 is -H, -OH, a halogen atom or an alkoxy group). The polysiloxane is obtained by co-polycondensing silane compounds corresponding to each structural unit. The radiation-sensitive resin composition contains the polysiloxane and a radiation sensitive acid generator. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004210917A

公开(公告)日：2004-07-29

申请号：JP2002380902

申请日：2002-12-27

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA ISAO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F20/28 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a (meth)acrylic polymer high in transparency to radiation, excellent in basic properties as a resist such as sensitivity, resolution, dry etching resistance, pattern form, etc. especially excellent in the solubility to a resist solvent, and suitable for a radiation-sensitive resin compound which reduces the roughness on a pattern side wall after developing.
SOLUTION: This (meth)acrylic polymer contains the repeating unit represented by formula (1) wherein R represents hydrogen or a methyl group, A is represented as -(-(1-12C alkylene group)-O-)
m - , m represents an integer of 1-3, and an oxygen atom bonded to an alkylene group is bonded to a norbornane ring derivative.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004157469A

公开(公告)日：2004-06-03

申请号：JP2002325403

申请日：2002-11-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO KEIJI ,  SUGITA HIKARI ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  C08G77/02 ,  C08G77/18 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist lower layer film excellent in storage stability for obtaining a resist lower layer film which suppresses resist peeling, improves reproducibility of a pattern, and has alkali resistance and resistance to oxygen ashing in resist removal, by disposal under a resist. SOLUTION: The composition for a resist lower layer film comprises (A) a hydrolysis condensation product of an alkoxysilane including a compound of the formula Si(OR 2 ) 4 , wherein four symbols R 2 may be the same or different and are each a monovalent organic group, and (B) a hydrolysis condensation product of an alkoxysilane including at least a compound of the formula R 1 n Si(OR 2 ) 4-n , wherein a plurality of symbols R 1 may be the same or different and are each a monovalent organic group or H; a plurality of symbols R 2 may be the same or different and are each a monovalent organic group; and n is an integer of 1-2. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004054209A

公开(公告)日：2004-02-19

申请号：JP2003002477

申请日：2003-01-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHIMIZU DAISUKE ,  YOSHIDA KOICHIRO ,  NEMOTO HIROAKI ,  NAGAI TOMOKI ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method for reducing play of a standing wave and influence of film thickness variation on line width by suppressing reflection on a high-reflection substrate without spoiling basic properties as resist, such as a pattern shape, dry etching resistance and heat resistance. SOLUTION: The pattern forming method includes a process of forming a film of 30 to 50 % in radiation transmissivity at an exposure wavelength by coating a substrate with a composition and a process of exposure and development. To form a resist pattern, the exposing/developing process is carried out after the substrate is coated in advance with the radiation-sensitive resin composition to form a resist film and an upper-layer antireflective film is formed thereon. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003316006A

公开(公告)日：2003-11-06

申请号：JP2002124644

申请日：2002-04-25

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA ISAO ,  NISHIMURA YUKIO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition having high transparency to a radiation, satisfying basic properties required by a resist, such as sensitivity, resolution, dry etching resistance and pattern shape, and ensuring good adhesiveness to a substrate and few development defects. SOLUTION: The radiation sensitive resin composition comprises an acid- dissociating group-containing resin which is alkali-insoluble or slightly alkali- soluble and becomes readily alkali-soluble by the action of an acid and a radiation sensitive acid generator, wherein the acid-dissociating group-containing resin contains an acid-dissociating group represented by formula (1). COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种对辐射具有高透明度的辐射敏感性树脂组合物，满足抗蚀剂所要求的基本性能，例如灵敏度，分辨率，耐干蚀刻性和图案形状，并且确保与基材的良好粘附性 几乎没有发展缺陷。 解决方案：辐射敏感性树脂组合物包含碱解不溶性或略微碱溶性的酸解离基团的树脂，并且通过酸和辐射敏感性酸产生剂的作用变得容易碱溶，其中 含酸解离基团的树脂含有由式（1）表示的酸解离基团。 版权所有（C）2004，JPO

公开(公告)号：JP2003186196A

公开(公告)日：2003-07-03

申请号：JP2001383614

申请日：2001-12-17

Applicant: JSR CORP

Inventor： OKAMOTO KENJI ,  SHIMIZU DAISUKE ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/28 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having a high resolution and a high radiation transmittance as a chemically amplified resist sensitive to an actinic radiation such as KrF excimer laser, ArF excimer laser, F 2 excimer laser or far UV typified by EUV (extreme-ultraviolet radiation). SOLUTION: The radiation-sensitive resin composition is characterized in containing (A) a polymer component comprising a repeating unit derived from a tetrahydrofuranyl-containing (meth)acrylate, a repeating unit derived from a hydroxystyrene or the like and a repeating unit containing an acid-dissociable group and (B) a radiation-sensitive acid generator. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002365804A

公开(公告)日：2002-12-18

申请号：JP2001174849

申请日：2001-06-08

Applicant: JSR CORP

Inventor： NAGAI TOMOKI ,  KOBAYASHI HIDEKAZU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition having high sensitivity, high resolution and high radiation transmittance, excellent in smoothness of a pattern surface in micro dimensions and capable of avoiding partial insolubilization in over-exposure without impairing basic solid state properties as a resist such as pattern shape, dry etching resistance and heat resistance. SOLUTION: The radiation sensitive resin composition is characterized in containing (A) an adamantane derivative typified by a t-butyl adamantanecarboxylate or a di(t-butoxycarbonylmethyl) adamantanedicarboxylate, (B) an alkali-insoluble or slightly alkali-soluble resin having a hydroxystyrene repeating unit and a repeating unit having an acid dissociable group and (C) a radiation sensitive acid generator.

公开(公告)号：JP2002309110A

公开(公告)日：2002-10-23

申请号：JP2001372213

申请日：2001-12-06

Applicant: JSR CORP

Inventor： NISHIMURA ISAO ,  BESSHO NOBUO ,  KUMANO KOJI ,  SHIMOKAWA TSUTOMU ,  YAMADA KENJI

IPC: G03F7/004 ,  C08K5/00 ,  C08L67/00 ,  C08L69/00 ,  C08L71/00 ,  C08L73/00 ,  C08L79/00 ,  C08L81/02 ,  C08L83/04 ,  C08L83/14 ,  C08L85/00 ,  C08L101/00 ,  C09K3/00 ,  G02B1/04 ,  G02B3/00 ,  G02B5/18 ,  G03H1/02

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive composition undergoing a change in refractive index, which can realize a change in the refractive index of a material by a simple method, giving a sufficiently great difference in refractive index due to the change, and can give a refractive index pattern and an optical material that are stable independent of the service conditions thereafter. SOLUTION: The radiation-sensitive composition undergoing a change in refractive index contains (A) a decomposable compound, (B) a nondecomposable compound having a refractive index higher than that of the compound (A), (C) a radiation-sensitive decomposer and (D) a stabilizing agent. The irradiation of the composition with radiations through a pattern mask decomposes the components (C) and (A) at the irradiated part to produce a difference in refractive index between the irradiated part and the unirradiated part, thus forming a pattern different in refractive index.

公开(公告)号：JP2002278073A

公开(公告)日：2002-09-27

申请号：JP2001077042

申请日：2001-03-16

Applicant: JSR CORP

Inventor： IWAZAWA HARUO ,  NISHIYAMA SATORU ,  HAYASHI AKIHIRO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/075 ,  C08K5/00 ,  C08L83/06 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition containing a specified polysiloxane, having high transparency to radiation of and X are each a monovalent organic group which is dissociated by an acid and generates H or H (but the case of X =H is excluded); R" is H, methyl or trifluoromethyl; and (m) and (n) are each an integer of 0-3.

公开(公告)号：JP2002244285A

公开(公告)日：2002-08-30

申请号：JP2001043843

申请日：2001-02-20

Applicant: JSR CORP

Inventor： SANO KIMIYASU ,  MIYAJIMA FUMINAO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/022 ,  C07C303/28 ,  C07C309/71 ,  C08K5/13 ,  C08K5/42 ,  C08L61/06 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition ensuring good resolution and a good pattern section shape and suitable for use as a positive type resist having a good margin for exposure. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- soluble novolak resin, (B) a naphthoquinonediazido compound of a phenol compound of formula (1) (where X1 and X2 are each H or alkyl and (p) and (q) are each 1 or 2) and (C) a low molecular weight compound containing 2 or 3 benzene rings and having at least one hydroxyl group on each of the benzene rings. The margin (Eop/Ec) of the composition for exposure is >=1.20.