Abstract:
A portable housing capable of being carried by a certain person includes a circuit. The circuit includes a memory for storing private data concerning that certain person, a circuit operable to effectuate storage of the private data in the memory in a secure manner, and a processing unit operable to control access to the memory for purposes of reading private data concerning the certain person from the memory and storing private data concerning the certain person to the memory. The conditions under which access to the memory for read and write operations with respect to the private data is permitted are governed by parameters that are specified by the certain person to whom the stored private data concerns. A biometric sensor may also be included to capture identification information useful in implementing the operations for controlling access to the memory.
Abstract:
The thin film transistor formed of polycrystalline silicon is positioned adjacent a heat reaction chamber. The gate electrode for the transistor is formed within a silicon substrate and a gate dielectric is positioned over the gate electrode. A pass transistor is coupled to the gate electrode, the pass transistor having a source/drain region in the same semiconductor substrate and positioned adjacent to the gate electrode of the thin film heating transistor. When the pass transistor is enabled, a voltage is applied to the gate electrode which causes the current to flow from the drain to the source of the thin film transistor. The current flow passes through a highly resistive region which generates heat that is transmitted to the heat reaction chamber.
Abstract:
A microfabricated structure and method of making that includes forming a first layer of material on a substrate, forming patterned sacrificial material having a predetermined shape on the first layer of material, and forming a second layer of material over the first layer and the patterned sacrificial material, which is then removed to form an encapsulated cavity. Ideally, the first and second layers are formed of the same type material. A structural support layer can be added to the second layer. Openings can be formed in the cavity, and the cavities can be layered side by side, vertically stacked with interconnections via the openings, and a combination of both can be used to construct stacked arrays with interconnections throughout.
Abstract:
The thin film transistor formed of polycrystalline silicon is positioned adjacent a heat reaction chamber. The gate electrode for the transistor is formed within a silicon substrate and a gate dielectric is positioned over the gate electrode. A pass transistor is coupled to the gate electrode, the pass transistor having a source/drain region in the same semiconductor substrate and positioned adjacent to the gate electrode of the thin film heating transistor. When the pass transistor is enabled, a voltage is applied to the gate electrode which causes the current to flow from the drain to the source of the thin film transistor. The current flow passes through a highly resistive region which generates heat that is transmitted to the heat reaction chamber.
Abstract:
An electronic system coupled to a memory, comprising: a core logic chipset having access to the memory; a decoder having access to the memory; a memory interface coupled to the core logic chipset and the decoder, the memory interface having an arbiter coupled to a core logic chipset direct memory access engine and a decoder direct memory access engine, the arbiter for selectively providing access for the core logic chipset and the decoder to the memory; and a bus coupled to the memory, the first device and the decoder, wherein the decoder and the core logic chipset are coupled to the memory through the bus, the bus having a bandwidth providing access to the memory sufficient to maintain real-time operation of the decoder and to allow the core logic chipset to access the memory thereby enabling the decoder and the core logic chipset to share the memory; wherein said memory interface is operable to provide memory access to the core logic chipset through said bus when the decoder is not operating.