Abstract:
The present invention relates to a microelectronic device and a method of manufacturing the microelectronic device. The microelectronic device includes: semiconductor substrates (1; 1a), each of the semiconductor substrates having a top surface (O) and a rear surface (R); a mass unit (M) being elastically displaced on the top surface (O) of the substrate (1); at least one source area (10; 10′) disposed in or on the mass unit (M); at least one drain area (D1-D4; D1′-D10′) disposed in or on the mass unit (M); and a gate area (20; 20′) disposed above the source area (10: 10′) and the drain area (D1-D4; D1′-D10′), the gate area (20; 20′) being suspended by a conductor track assembly (LBA) and being spaced apart from the mass unit (M) through a gap (100). The conductor track assembly (LBA) is fixed to the top surface (O) of the substrate (1) in a periphery (P) of the mass unit (M) so that the gate area (20; 20′) is fixed and maintained when the mass unit (M) is displaced.
Abstract:
PURPOSE: A three-dimensional comb structure is provided to increase an electrostatic force through the increase of the number of combs per a unit area by manufacturing combs in vertical directions on a suspension structure and a substrate. CONSTITUTION: A suspension structure(42) is floated while maintaining a certain gap with a substrate to sense inertia movements and to be oscillated on the substrate. At least one or more elastic members(44) are connected to the suspension structure(42) in order to enable the suspension structure(42) to be oscillated. At least one or more supporters(45) are connected to the substrate to support the elastic members(44). A moving comb structure(43) is connected to the suspending structure(42) and has at least one comb formed to be protruded.
Abstract:
An MEMS component according to the present invention comprises: a membrane; a weight body connected to the membrane; and a support part which is connected to the membrane and supports the weight body in a floating state to be displaced. The membrane has an insulating adhesion layer in the center. An upper electrode and an upper piezoelectric body are arranged on one side of the membrane, and a lower electrode and a lower piezoelectric body are arranged on the other side of the membrane.
Abstract:
집적 전자장치를 갖는 MEMS 디바이스를 제공하기 위한 방법 및 시스템이 개시된다. MEMS 디바이스는 집적 회로 기판 및 집적 회로 기판에 연결된 MEMS 서브어셈블리를 포함한다. 집적 회로 기판은 적어도 하나의 고정 전극에 연결된 적어도 하나의 회로를 포함한다. MEMS 서브어셈블리는 리소그래피 공정에 의해 형성된 적어도 하나의 이격부, 상면과 하면을 구비하는 가요성 평판, 및 상기 가요성 평판에 연결되고 상기 적어도 하나의 이격부에 전기적으로 연결된 MEMS 전극을 포함한다. 상기 가요성 평판 상에서 작용하는 힘이 상기 MEMS 전극과 상기 적어도 하나의 고정 전극 사이의 간격의 변화를 야기한다.
Abstract:
PURPOSE: An inertial sensor manufacturing method is provided to improve the density of a mass object by forming the mass object with metal through a plating process or a filling process. CONSTITUTION: A first mold(120) is placed on a side of a predetermined area in a plate-shaped membrane(110) to expose a border(111) and a central part(113) of a side of the predetermined area. A mass object(130) is formed on the central part of the side of the predetermined area exposed by the first mold through a plating process or a filling process. A post(140) is formed at the border of the side of the predetermined area. The first mold is removed.
Abstract:
PROBLEM TO BE SOLVED: To provide a low-cost dynamic quantity sensor device and a method for manufacturing the same in which a pressure sensor and a high accuracy dynamic quantity sensor are optimally modularized in such a manner that the modularization does not decrease the performance of each dynamic quantity sensor.SOLUTION: In a dynamic quantity sensor device 100, a first dynamic quantity detection part M1 of a first dynamic quantity sensor R1 for detecting a pressure and a second dynamic quantity detection part M2 of a second dynamic quantity sensor R2 are displaceably formed on a first base 10, on which a second base plate 20 is stuck to form a first space K1 and a second space K2 that are not in communication with each other. The first substrate 10 consists of an SOI substrate. The first dynamic quantity detection part M1 and the second dynamic quantity detection part M2 are each arranged on part of a semiconductor region S consisting of an SOI layer 3. The second dynamic quantity detection part M2 measures a change in capacitance of two opposing surfaces in a second movable semiconductor region S2a and a second fixed semiconductor region S2b to detect a second dynamic quantity.
Abstract:
An exposed end o a micromechanical system having at least one beam-shaped element is connected to a further element of the micromechanical system at the other end thereof. To optimize the mechanical properties of the micromechanical system, recesses are provided in the beam-shaped element in such a way that the mass of the beam-shaped elements decreases toward the exposed end.