公开(公告)号：EP1617451A2

公开(公告)日：2006-01-18

申请号：EP05254406.1

申请日：2005-07-14

Applicant: NGK INSULATORS, LTD.

Inventor： Nanataki, Tsutomu, c/o Legal Affairs and I P Dept. ,  Yamaguchi, Hirofumi, Legal Affairs and I P Dept. ,  Kobayashi, Nobuyuki, Legal Affairs and I P Dept.

IPC: H01J1/304

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J9/025 ,  H01J2201/306 ,  H01J2201/3125 ,  H01J2329/00

Abstract: A dielectric device of higher performance is provided. An electron emitter (10A) to which the dielectric device of the present invention is applied includes an emitter (12) formed by a dielectric, and an upper electrode (14) and a lower electrode (16) to which a drive voltage is applied for the purpose of electron emission. The emitter includes an upper layer (12c) formed from plural dielectric particles (12e), and a lower layer (12d) formed from plural dielectric particles, below the upper layer. The upper layer and/or lower layer are formed by aerosol deposition.

Abstract translation: 提供更高性能的介电器件。 应用了本发明的电介质器件的电子发射器（10A）包括由电介质形成的发射极（12）和施加有驱动电压的上电极（14）和下电极（16） 电子发射的目的。 发射器包括由多个电介质颗粒（12e）形成的上层（12c）和在上层下面的由多个电介质颗粒形成的下层（12d）。 上层和/或下层通过气溶胶沉积形成。

公开(公告)号：EP0989577B1

公开(公告)日：2004-02-04

申请号：EP99118925.9

申请日：1999-09-25

Applicant: Matsushita Electric Works, Ltd.

Inventor： Komoda, Takuya ,  Ichihara, Tsutomu ,  Aizawa, Koichi ,  Koshida, Nobuyoshi

IPC: H01J1/30 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/025 ,  H01J2201/3125 ,  Y10S977/939

公开(公告)号：EP1320116A1

公开(公告)日：2003-06-18

申请号：EP02722726.3

申请日：2002-04-24

Applicant: Matsushita Electric Works, Ltd.

Inventor： KOMODA, Takuya, MATSUSHITA ELECTRIC WORKS, LTD. ,  AIZAWA, Koichi, MATSUSHITA ELECTRIC WORKS, LTD. ,  HONDA, Yoshiaki, MATSUSHITA ELECTRIC WORKS, LTD. ,  ICHIHARA, Tsutomu, MATSUSHITA ELECTRIC WORKS, LTD. ,  WATABE, Yoshifumi, MATSUSHITA ELECTRIC WORKS, LTD. ,  HATAI, Takashi, MATSUSHITA ELECTRIC WORKS, LTD. ,  BABA, Toru, MATSUSHITA ELECTRIC WORKS, LTD. ,  TAKEGAWA, Yoshiyuki, MATSUSHITA ELECT. WORKS, LTD.

IPC: H01J1/312 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/3125

Abstract: In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to an extent such that an electron tunneling phenomenon occurs.

Abstract translation: 在场致发射型电子源（10）中，在n型硅衬底（1）上设置强电场漂移层（6）和由金薄膜构成的表面电极（7）。 在n型硅衬底（1）的背面设有欧姆电极（2）。 施加直流电压，使得表面电极（7）在与欧姆电极（2）相关的电位变为正。 以这种方式，经由n型硅衬底（6）从欧姆电极（2）注入强场漂移层（6）的电子在强场漂移层（6）中漂移，并经由 表面电极（7）。 强场漂移层（6）具有：部分地由构成强场漂移层（6）的半导体层形成的多个纳米级的半导体纳米晶体（63）; 以及多个绝缘膜（64），其各自形成在每个半导体纳米晶体（63）的表面上并且各自具有使得发生电子隧道现象的程度的膜厚度。

公开(公告)号：EP1220278A2

公开(公告)日：2002-07-03

申请号：EP01130624.8

申请日：2001-12-27

Applicant: Pioneer Corporation

Inventor： Chuman, Takashi, Pioneer Corporation ,  Yoshikawa,Takamasa, Pioneer Corporation ,  Hata, Takuya, Pioneer Corporation ,  Sakemura,Kazuto, Pioneer Corporation ,  Yamada, Takashi, Pioneer Corporation ,  Negishi, Nobuyasu, Pioneer Corporation ,  Iwasaki, Shingo, Pioneer Corporation ,  Satoh, Hideo, Pioneer Corporation ,  Yoshizawa, Atsushi, Pioneer Corporation ,  Ogasawara, Kiyohide, Pioneer Corporation

IPC: H01J31/12 ,  H01J1/30

CPC classification number: H01J1/60 ,  B82Y10/00 ,  H01J1/30 ,  H01J11/10 ,  H01J29/92 ,  H01J31/12 ,  H01J31/127 ,  H01J2201/3125 ,  H01J2211/46 ,  H01L27/3288

Abstract: A display device has an emitting region constituted by a plurality of first electrodes provided on a substrate and extending in parallel, a plurality of second electrodes provided on the first electrodes and extending substantially perpendicularly to the first electrodes, and a plurality of emission sites for emitting electrons or light respectively connected to a plurality of intersections between the first and second electrodes and arranged on the substrate and has a peripheral region surrounding the emitting region on the substrate. In this display device, first and second groups of external repeating terminals for the first and second electrodes are collectively provided side by side in a part of the peripheral region.

Abstract translation: 显示装置具有由设置在基板上并且平行延伸的多个第一电极构成的发射区域，设置在第一电极上且大致垂直于第一电极延伸的多个第二电极，以及用于发射的多个发射部位 电子或光分别连接到第一和第二电极之间的多个交叉点并且布置在基板上并且具有围绕基板上的发射区域的周边区域。 在该显示装置中，第一和第二组用于第一和第二电极的外部重复端子组一起并排设置在周边区域的一部分中。

公开(公告)号：EP2006875A4

公开(公告)日：2010-06-09

申请号：EP07739652

申请日：2007-03-26

Applicant: PIONEER CORP

Inventor： TANAKA RYOTA ,  NEGISHI NOBUYASU ,  SAKEMURA KAZUTO ,  OKUDA YOSHIYUKI ,  NAKADA TOMONARI ,  WATANABE ATSUSHI ,  YOSHIKAWA TAKAMASA ,  OGASAWARA KIYOHIDE

IPC: H01J1/312 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J9/022 ,  B82Y10/00 ,  H01J1/312 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/312 ,  H01J2201/3125 ,  H01J2329/0481 ,  H01J2329/0484

公开(公告)号：EP1630842A3

公开(公告)日：2008-05-28

申请号：EP05255199.1

申请日：2005-08-24

Applicant: NGK INSULATORS, LTD.

Inventor： Yamaguchi, Hirofumi, NGK Insulators, Ltd. ,  Sato, Kei, NGK Insulators, Ltd. ,  Kashiwaya, Toshikatsu, NGK Insulators, Ltd.

IPC: H01J1/304 ,  H01J1/312

CPC classification number: H01J1/312 ,  B82Y10/00 ,  C04B35/493 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3227 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/764 ,  C04B2235/765 ,  H01J1/32 ,  H01J2201/306 ,  H01J2201/3125 ,  H01J2329/00

Abstract: Provided is a piezoelectric-film-type electron emitter which enables suppression of reduction of electron emission quantity due to repeated use thereof, and which exhibits high durability. The electron emitter includes a substrate (11); an emitter section (12) formed of a dielectric material; a first electrode (14) formed on the top surface of the emitter section; and a second electrode (16) formed on the bottom surface of the emitter section. The dielectric material forming the emitter section contains a dielectric composition having an electric-field-induced strain (i.e., percent deformation under application of an electric field of 4 kV/mm, as measured in a direction perpendicular to the electric field) of 0.07% or less.

公开(公告)号：EP1617450A3

公开(公告)日：2008-02-13

申请号：EP05254405.3

申请日：2005-07-14

Applicant: NGK INSULATORS, LTD.

Inventor： Nanataki, Tsutomu ,  Yamaguchi, Hirofumi ,  Tanaka, Ritsu

IPC: H01J1/30 ,  H01J1/32 ,  H01J1/312 ,  H01J1/304

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J1/32 ,  H01J2201/306 ,  H01J2201/3125 ,  H01J2329/00

Abstract: A dielectric device of higher performance is provided. An electron emitter (12), to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode (14) and a lower electrode (16) to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method, and the surface roughness of the upper surface thereof is controlled in the range from 0.1 to 3 in Ra.

公开(公告)号：EP1553616A4

公开(公告)日：2007-10-10

申请号：EP02788578

申请日：2002-10-18

Applicant: HITACHI LTD

Inventor： SAGAWA MASAKAZU ,  KUSUNOKI TOSHIAKI ,  SUZUKI MUTSUMI

IPC: H01J1/312 ,  H01J29/04 ,  H01J29/48 ,  H01J31/12

CPC classification number: H01J29/481 ,  B82Y10/00 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/3125

Abstract: An upper wiring electrode (16) serving as a power feed line to an upper electrode (13) of a thin-film type electron source array is underlaid with a second layer insulation layer (15) to prevent a short circuit. The electron emission part is limited by the second layer insulation layer (15) to cover defects unevenly distributed over the boundary between an electron acceleration layer (12) and a first layer insulation layer (14), so that insulation breakdown with time is prevented.

公开(公告)号：EP1630842A2

公开(公告)日：2006-03-01

申请号：EP05255199.1

申请日：2005-08-24

Applicant: NGK INSULATORS, LTD.

Inventor： Yamaguchi, Hirofumi, NGK Insulators, Ltd. ,  Sato, Kei, NGK Insulators, Ltd. ,  Kashiwaya, Toshikatsu, NGK Insulators, Ltd.

IPC: H01J1/304 ,  H01J1/312

CPC classification number: H01J1/312 ,  B82Y10/00 ,  C04B35/493 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3227 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/764 ,  C04B2235/765 ,  H01J1/32 ,  H01J2201/306 ,  H01J2201/3125 ,  H01J2329/00

Abstract: Provided is a piezoelectric-film-type electron emitter which enables suppression of reduction of electron emission quantity due to repeated use thereof, and which exhibits high durability. The electron emitter includes a substrate (11); an emitter section (12) formed of a dielectric material; a first electrode (14) formed on the top surface of the emitter section; and a second electrode (16) formed on the bottom surface of the emitter section. The dielectric material forming the emitter section contains a dielectric composition having an electric-field-induced strain (i.e., percent deformation under application of an electric field of 4 kV/mm, as measured in a direction perpendicular to the electric field) of 0.07% or less.

Abstract translation: 本发明提供一种压电薄膜型电子发射器，其能够抑制由于重复使用而引起的电子发射量的降低，并且具有高耐久性。 该电子发射器包括衬底（11）; 由电介质材料形成的发射极部分（12） 形成在发射极部分的顶表面上的第一电极（14） 和形成在发射极部分的底表面上的第二电极（16）。 形成发射极部分的电介质材料包含具有电场感应应变（即，在施加4kV / mm的电场下的变形的百分比，在与电场垂直的方向上测量）为0.07％ 或更少。

公开(公告)号：EP1523026A2

公开(公告)日：2005-04-13

申请号：EP04255292.7

申请日：2004-09-01

Applicant: NGK INSULATORS, LTD.

Inventor： Takeuchi, Yukihisa, c/o NGK Insulators, Ltd. ,  Nanataki, Tsutomu, NGK Insulators, Ltd. ,  Ohwada, Iwao, NGK Insulators, Ltd. ,  Akao, Takayoshi, NGK Insulators, Ltd.

IPC: H01J1/312

CPC classification number: B82Y10/00 ,  G09G3/22 ,  H01J1/312 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/3125

Abstract: An electron emitter (10A) has an emitter (12) made of a dielectric material, and an upper electrode (14) and a lower electrode (16) to which a drive voltage (Va) is applied to emit electrons. The upper electrode (14) is formed on a first surface of the emitter (12), and the lower electrode (16) is formed on a second surface of the emitter (12). The upper electrode (14) has a plurality of through regions (20) through which the emitter (12) is exposed. The upper electrode (14) has a surface which faces the emitter (12) in peripheral portions (26) of the through regions (20) and which is spaced from the emitter (12).

Abstract translation: 电子发射体（10A）具有由电介质材料构成的发射极（12）和施加驱动电压（Va）的电极的上部电极（14）和下部电极（16）。 上电极（14）形成在发射极（12）的第一表面上，下电极（16）形成在发射极（12）的第二表面上。 上部电极（14）具有多个通过区域（20），发射器（12）通过该区域露出。 上部电极（14）具有与通孔区域（20）的周边部分（26）中的发射极（12）的表面，并且与发射极（12）间隔开。