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    엘리먼트를 감지하기 위한 웨이퍼 레벨 칩 스케일 패키지를 갖는 방법 및 장치
    161.
    发明公开
    엘리먼트를 감지하기 위한 웨이퍼 레벨 칩 스케일 패키지를 갖는 방법 및 장치 有权
    具有传感元件的水平流片尺寸包装的方法和装置

    公开(公告)号：KR1020070095959A

    公开(公告)日：2007-10-01

    申请号：KR1020077016574

    申请日：2005-12-14

    Applicant: 엔엑스피 유에스에이, 인코포레이티드

    Inventor： 맥도날드,윌리엄,지. ,  후퍼,스티븐,알. ,  세일리언,아르빈드,에스.

    IPC: H01L21/00

    CPC classification number: B81C1/00309 ,  B81C2201/053

    Abstract: Methods are provided for manufacturing a sensor (100). The method comprises depositing a sacrificial material (330) at a first predetermined thickness onto a wafer having at least one sense element mounted thereon, the sacrificial material deposited at least partially onto the at least one sense element, forming an encapsulating layer (332) at a second predetermined thickness less than the first predetermined thickness over the wafer and around the deposited sacrificial material, and removing the sacrificial material. Apparatus for a sensor manufactured by the aforementioned method are also provided.

    Abstract translation: 提供用于制造传感器（100）的方法。 该方法包括将第一预定厚度的牺牲材料（330）沉积到具有安装在其上的至少一个感测元件的晶片上，所述牺牲材料至少部分地沉积在至少一个感测元件上，形成封装层（332） 第二预定厚度小于晶片上方的第一预定厚度并且围绕沉积的牺牲材料，以及去除牺牲材料。 还提供了通过上述方法制造的传感器的装置。

    電子装置
    166.
    发明专利
    電子装置 审中-公开
    电子设备

    公开(公告)号：JP2015056620A

    公开(公告)日：2015-03-23

    申请号：JP2013190905

    申请日：2013-09-13

    Applicant: 株式会社東芝 ,  Toshiba Corp

    Inventor： NAKAMURA NAOFUMI

    IPC: H01G5/16 ,  B81B3/00 ,  B81C1/00

    CPC classification number: B81C1/00793 ,  B81B3/0021 ,  B81B3/0089 ,  B81B2201/0221 ,  B81B2203/0118 ,  B81B2203/053 ,  B81C1/00293 ,  B81C2201/053 ,  B81C2203/0145 ,  H01G5/16 ,  H01G5/18

    Abstract: 【課題】電極表面の酸化を抑制することが可能な可変キャパシタを備えた電子装置を提供する。【解決手段】実施形態に係る電子装置は、基板11と、基板の上方に設けられ、可変キャパシタに用いられる固定された第1の電極13aと、第1の電極の上方に設けられ、可変キャパシタに用いられる可動な第2の電極17aと、第1の電極の第2の電極に対向する第1の表面上に設けられた第1の保護絶縁膜14と、第2の電極の第1の電極に対向する第2の表面上に設けられた第2の保護絶縁膜16とを備える。【選択図】図8

    Abstract translation: 要解决的问题：提供一种包括能够抑制电极表面的氧化的可变电容器的电子设备。解决方案：根据实施例的电子设备包括：基板11; 设置在基板上方并用于可变电容器的固定第一电极13a; 设置在第一电极上方并用于可变电容器的可动第二电极17a; 设置在第一电极的面对第二电极的第一表面上的第一保护绝缘膜14; 以及设置在第二电极的面对第一电极的第二表面上的第二保护绝缘膜16。

    Base material surface treatment method
    167.
    发明专利
    Base material surface treatment method 审中-公开
    基材表面处理方法

    公开(公告)号：JP2012216706A

    公开(公告)日：2012-11-08

    申请号：JP2011081651

    申请日：2011-04-01

    Applicant: Seiko Epson Corp ,  セイコーエプソン株式会社

    Inventor： SAKAMOTO TAKESHI ,  TAKEUCHI JUNICHI

    IPC: H01L21/304 ,  H01L21/306

    CPC classification number: H01L21/304 ,  B81C1/00063 ,  B81C2201/053

    Abstract: PROBLEM TO BE SOLVED: To provide a base material surface treatment method by which grinding scratches caused on a processed surface of a base material formed into a thin plate by grinding are smoothed out in a step where a substrate to be a base material of an MEMS device or the like is ground to a desired thickness suitable for the device to be formed, and in which portions of the base material, excluding the processed surface, are prevented from being melted by etching when grinding chips are melted and removed through the etching.SOLUTION: A base material surface treatment method includes: a protection film formation step where a base material, having a first base material surface and a processed surface for performing the base material surface treatment on the first base material surface, is prepared and a protection film is formed along at least an outer edge of the first base material surface; a thin plate formation step where the base material is formed into a thin plate by grinding the processed surface forming an inner edge of the protection film formed on the first base material surface; and an etching step where the processed surface ground in the thin plate formation step is smoothed out by etching.

    Abstract translation: 要解决的问题：提供一种基材表面处理方法，其中通过研磨将形成在薄板上的基材的加工表面上产生的研磨刮痕在基材作为基材的步骤中被平滑化 将MEMS器件等研磨成适合于要形成的器件的期望厚度，并且其中除了经处理的表面之外的基底材料的部分通过蚀刻被熔化，当研磨芯片被熔化和去除时 蚀刻。 基材表面处理方法包括：保护膜形成步骤，其中制备具有第一基材表面和用于在第一基材表面进行基材表面处理的加工表面的基材， 沿着第一基材表面的至少外边缘形成保护膜; 薄板形成步骤，其中通过研磨形成在第一基材表面上形成的保护膜的内边缘的加工表面，将基材形成为薄板; 以及蚀刻步骤，其中在薄板​​形成步骤中研磨的被处理表面通过蚀刻被平滑化。 版权所有（C）2013，JPO＆INPIT

    Acoustic sensor and method for manufacturing the same
    168.
    发明专利
    Acoustic sensor and method for manufacturing the same 有权
    声学传感器及其制造方法

    公开(公告)号：JP2011239197A

    公开(公告)日：2011-11-24

    申请号：JP2010109164

    申请日：2010-05-11

    Applicant: Omron Corp ,  オムロン株式会社

    Inventor： KASAI TAKASHI ,  IIDA NOBUYUKI ,  NAKAMURA SATOSHI

    IPC: H04R19/00 ,  H04R31/00

    CPC classification number: B81B7/0016 ,  B81B2201/0257 ,  B81B2207/012 ,  B81C2201/053 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/8592 ,  H01L2924/16151 ,  H04R19/005 ,  H04R31/00 ,  H01L2924/00014

    Abstract: PROBLEM TO BE SOLVED: To provide an acoustic sensor having an outer periphery of upper surface of a silicon substrate protected with a protective film using a back plate.SOLUTION: A conductive diaphragm 33 is arranged over a silicon substrate 32 having a back chamber 35 and is supported by an anchor 37. An insulative plate 39 is fixed on an upper surface of the silicon substrate 32 so as to cover the diaphragm 33 at an interval. A conductive fixed electrode film 40 is arranged on an under surface of the plate 39 to constitute a back plate 34. Electric signals showing change in electrostatic capacitance between the fixed electrode film 40 and the diaphragm 33 are sent out from a fixed side electrode pad 45 and a movable side electrode pad 46. A protective film 53 is aligned with the plate 39 on an outer periphery thereof. The protective film 53 coats an outer periphery of an upper surface of the silicon substrate 32, which matches an outer periphery of the protective 53.

    Abstract translation: 要解决的问题：提供一种使用背板由保护膜保护的硅衬底的上表面的外周的声学传感器。 解决方案：导电隔膜33布置在具有后室35并由锚固件37支撑的硅基板32上。绝缘板39固定在硅基板32的上表面上以覆盖隔膜 33间隔。 导电固定电极膜40布置在板39的下表面上以构成背板34.表示固定电极膜40和隔膜33之间的静电电容变化的电信号从固定侧电极焊盘45 和可动侧电极焊盘46.保护膜53在其外周与板39对准。 保护膜53涂覆硅基板32的与保护层53的外周相匹配的上表面的外周。（C）2012，JPO＆INPIT

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