公开(公告)号：JP2005056667A

公开(公告)日：2005-03-03

申请号：JP2003285874

申请日：2003-08-04

Applicant: Futaba Corp ,  双葉電子工業株式会社

Inventor： TANIGUCHI MASATERU ,  KITADA MANABU ,  NAKAMURA KAZUHITO ,  KAWADA SATORU

IPC: H01J29/04 ,  H01J1/02 ,  H01J1/304 ,  H01J1/62 ,  H01J31/12 ,  H01J63/04

CPC classification number: H01J1/3046 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/30423

Abstract: PROBLEM TO BE SOLVED: To improve focusing nature of emitted electrons of an edge emitter type FED. SOLUTION: This edge emitter type FED has a 3-electrode structure composed of a gate electrode laminated on the substrate and an anode electrode installed on the substrate facing an emitter electrode via an insulating interlayer on this gate electrode, and is provided with an anode pixel formed from the anode electrode and a phosphor, and provided with a well formed by a slender opening hole formed by the emitter electrode and the insulating interlayer. The longitudinal direction of the well is formed perpendicular to the longitudinal direction of a rectangular shaped subpixel of the anode pixel. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：改善边缘发射器型FED的发射电子的聚焦性质。 解决方案：该边缘发射器型FED具有由在该基板上层叠的栅极电极和在该栅电极上经由绝缘夹层安装在面向发射极的基板上的阳极电极构成的3电极结构， 由阳极电极和荧光体形成的阳极像素，并且具有由发射电极和绝缘中间层形成的细长的开孔形成的阱。 阱的纵向方向垂直于阳极像素的矩形子像素的纵向方向形成。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2012003939A

公开(公告)日：2012-01-05

申请号：JP2010137888

申请日：2010-06-17

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： TSUTSUI AKIRA ,  SUMIYA TOSHIJI ,  HACHISU TAKAHIRO

IPC: H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/3046 ,  H01J9/025 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

Abstract: PROBLEM TO BE SOLVED: To provide an electron emission element which includes: a gate 5 provided on an upper surface of a step forming member 2; a recess 7 formed directly under the gate 5 on a side surface 20 of the step forming member 2; and a cathode 6 which is provided on the side surface 20 of the step forming member 2 and has a projection 6a projecting toward an upper edge from a lower edge of the recess 7 at the upper end, where electron emission efficiency is improved, and at the same time, a resistance layer for current limitation for suppressing variations in current flowing through the element is incorporated as a part of a constituent member of the element.SOLUTION: In the electron emission element, on the side surface 20 of the step forming member 2, an inclination angle θ2 of a lower stage 22 covering from an intermediate part 30 in a height direction to the lower end is larger than the inclination angle θ1 of an upper stage 21 covering from the lower edge of the recess 7 to the intermediate part 30 in the height direction. Besides, an electrical resistance value of a lower stage cathode portion 6c forming a portion of the lower stage 22 of a cathode 6 is larger than that of an upper stage cathode portion 6b forming a portion of the upper stage 21 of the cathode 6.

Abstract translation: 要解决的问题：提供一种电子发射元件，其包括：设置在台阶形成构件2的上表面上的栅极5; 在台阶形成构件2的侧面20上形成在门5正下方的凹部7; 以及阴极6，其设置在台阶形成构件2的侧面20上，具有从上端部的凹部7的下边缘朝向上边缘突出的突起6a，电子发射效率提高， 同时，作为元件的构成部件的一部分，并入用于抑制流过该元件的电流的变化的电流限制的电阻层。 解决方案：在电子发射元件中，在台阶形成构件2的侧面20上，从中间部30在高度方向向下端覆盖的下层22的倾斜角度θ2大于 从凹部7的下缘到高度方向的中间部30覆盖的上层21的倾斜角度θ1。 此外，形成阴极6的下级22的一部分的下级阴极部6c的电阻值大于形成阴极6的上级21的一部分的上级阴极部6b的电阻值。 P>版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011082094A

公开(公告)日：2011-04-21

申请号：JP2009235082

申请日：2009-10-09

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： HASHIZUME YOHEI

IPC: H01J1/304 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/3046 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

Abstract: PROBLEM TO BE SOLVED: To provide an electron emission element aligned in high definition and reducing static capacity and to provide an electron beam device as well as an image display device using the element. SOLUTION: The electron emission element is provided with an insulating member fitted on the surface of a base plate and having side faces erected from the surface of the base plate and a top face, a gate fitted on the top face of the insulating member, and cathodes fitted to the side faces of the insulating member in opposition to the gate, as well as a part, on the side faces of the insulating member where the cathodes are fitted, protruded from a straight line connecting a site where a part of each cathode at the side faces opposed to the gate is located and a site erected from the surface of the base plate. The electron beam device and the image display device use the above electron emission element. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供以高清晰度排列并降低静电容量的电子发射元件，并提供电子束装置以及使用该元件的图像显示装置。 解决方案：电子发射元件设置有绝缘构件，该绝缘构件安装在基板的表面上并且具有从基板的表面竖立的侧面和顶面，安装在绝缘体的顶面上的栅极 构件和阴极，其安装在与栅极相对的绝缘构件的侧面上，以及在阴极被安装的绝缘构件的侧面上的一部分，从连接一部分的部位的直线突出 位于与栅极相对的侧面处的每个阴极的位置和从基板的表面竖立的位​​置。 电子束装置和图像显示装置使用上述电子发射元件。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011082071A

公开(公告)日：2011-04-21

申请号：JP2009234523

申请日：2009-10-08

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： TASHIRO HIDEYASU ,  HASHIZUME YOHEI ,  HIROIKE TARO ,  KOBAYASHI FUMIKAZU

IPC: H01J1/304 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/3046 ,  H01J3/021 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2203/02 ,  H01J2329/0423

Abstract: PROBLEM TO BE SOLVED: To provide an electron-emitting device capable of restraining reduction in an amount of electron emission and reducing electrostatic capacity, to provide an electron beam apparatus having the electron-emitting device, and to provide an image display apparatus. SOLUTION: In the electron-emitting device including an insulating member having an upper surface, a side surface, and a recessed section formed between the upper surface and the side surface, a cathode electrode having an electron emission section arranged on the side surface and located at a boundary section between the side surface and the recessed section, and a gate electrode arranged on the upper surface and making an end opposite to the electron emission section, the boundary section where the electron emission section is located has unevenness in a direction parallel to the upper surface. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供能够抑制电子发射量减少和降低静电电容的电子发射器件，以提供具有电子发射器件的电子束装置，并提供一种图像显示装置 。 解决方案：在包括形成在上表面和侧表面之间的具有上表面，侧表面和凹陷部分的绝缘构件的电子发射器件中，具有布置在侧面上的电子发射部分的阴极 表面并且位于侧表面和凹陷部分之间的边界部分处，并且栅电极设置在上表面上并且形成与电子发射部分相对的端部，电子发射部分所在的边界部分具有不均匀性 方向平行于上表面。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010157489A

公开(公告)日：2010-07-15

申请号：JP2009217330

申请日：2009-09-18

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： AOKI NAOFUMI ,  NISHIDA AKIYUKI

IPC: H01J9/02 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of easily manufacturing an electron emitting element coated with a low work function material and having a favorable electron emitting characteristic to suppress a variation in electron emitting characteristic among the elements with high reproducibility. SOLUTION: In the method of manufacturing the electron emitting element, a metal oxide layer is formed on a surface of a structure before coating the underlying structure with the low work function material. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种容易地制造涂覆有低功函数材料并具有良好的电子发射特性的电子发射元件的制造方法，以抑制重复性高的元件之间的电子发射特性的变化。 解决方案：在制造电子发射元件的方法中，在用低功函数材料涂覆下面的结构之前，在结构的表面上形成金属氧化物层。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010092843A

公开(公告)日：2010-04-22

申请号：JP2009189900

申请日：2009-08-19

Applicant: Canon Inc ,  キヤノン株式会社

Inventor： KUBOTA OICHI ,  SUZUKI TOMOTAKE ,  KAWASAKI HIDEJI ,  KOBAYASHI TAMAKI ,  TAKEDA TOSHIHIKO

IPC: H01J1/304 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/316 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/3165 ,  H01J2329/0423 ,  H01J2329/0489

Abstract: PROBLEM TO BE SOLVED: To attain stable electron emission characteristics and to prevent deterioration or breakage of elements due to overheating from occurring even when excessive heat is generated in an electron beam device employing an electron emitting element which includes a gate 5, a cathode 6a and an insulating member 9 with a recess 7 therebetween and emits electrons that have collided with and been scattered by the gate 5. SOLUTION: The cathode 6a includes a projection 30 disposed being extended over from the outer surface of the insulating member 9 to the inner surface of the recess 7 formed in the insulating member 9. The gate 5 includes a laminated body including at least two of conductive layers 5a and 5b. The coefficient of thermal expansion of the conductive layer 5b which is disposed at a position facing the projection 30 is made larger than the other one of conductive layer 5a. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了获得稳定的电子发射特性，并且即使在使用包括栅极5的电子发射元件的电子束装置中产生过多的热量时，也不会发生由于过热导致的元件的劣化或断裂， 阴极6a和绝缘构件9，其间具有凹部7，并且发射与栅极5相撞并被栅极5散射的电子。解决方案：阴极6a包括突出部30，突出部30从绝缘体的外表面延伸设置 构件9形成在形成在绝缘构件9中的凹部7的内表面。栅极5包括包括导电层5a和5b中的至少两个的层叠体。 布置在与突起30相对的位置处的导电层5b的热膨胀系数比导电层5a中的另一个大。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：KR20180006322A

公开(公告)日：2018-01-17

申请号：KR20170086028

申请日：2017-07-06

Applicant: THALES SA

Inventor： MAZELLIER JEAN PAUL ,  SABAUT LUCIE

IPC: H01J1/304 ,  H01J35/06

CPC classification number: H01J35/065 ,  H01J1/15 ,  H01J1/312 ,  H01J23/04 ,  H01J35/06 ,  H01J2201/30423 ,  H01J2201/30434 ,  H01J2235/068

Abstract: 본발명은진공전자튜브에관한것이며, 이진공전자튜브는진공챔버 (E) 에배열된적어도하나의전자방출캐소드 (C) 및적어도하나의애노드 (A) 를가지며, 상기캐소드는전도성재료를포함하는기판 (Sb), 기판으로부터전기적으로절연되어있는복수의나노튜브또는나노와이어소자들로서, 상기나노튜브또는나노와이어소자들의종축은상기기판의평면에대해실질적으로평행한, 상기복수의나노튜브또는나노와이어소자들, 및나노와이어또는나노튜브소자에제 1 전위 (V1) 를인가가능하도록적어도하나의나노튜브또는나노와이어소자에전기적으로연결된적어도하나의제 1 커넥터 (CE1) 를포함하는평면형구조체를갖는다.

Abstract translation: 真空电子管包括至少一个电子发射阴极和布置在真空室中的至少一个阳极，所述阴极具有平面结构，所述平面结构包括衬底，所述衬底包括导电材料，与所述衬底电绝缘的多个纳米管或纳米线元件， 纳米管或纳米线元件的纵向轴线基本上平行于衬底的平面，并且至少一个第一连接器电连接至至少一个纳米管或纳米线元件，以便能够将第一电势施加至纳米线或纳米管 元件。

公开(公告)号：KR1020150026363A

公开(公告)日：2015-03-11

申请号：KR1020130105097

申请日：2013-09-02

Applicant: 삼성전자주식회사 ,  금오공과대학교 산학협력단

Inventor： 이동구 ,  박상현 ,  김용철 ,  이창수 ,  김도윤

IPC: H01J1/30

CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J35/065 ,  H01J2201/30423 ,  H01J2201/30461

Abstract: 개시된 전계 방출 소자는, 캐소드 전극과, 상기 캐소드 전극에 지지된 전자 방출원을 포함하는 에미터; 상기 에미터 주위에 마련되고 상기 전자 방출원으로부터 방출된 전자의 통로인 개구를 형성하는 절연 스페이서; 상기 개구를 덮는 그래핀 시트를 구비하는 게이트 전극;을 포함한다.

Abstract translation: 本发明提供能够在低栅极电压下高效率地抽出许多电子的场致发射元件，以及制造场致发射元件的栅电极的方法。 所公开的场发射元件包括：阴极电极; 包括由阴极电极支撑的电子发射源的发射极; 绝缘间隔件，其布置在发射器周围并形成作为从电子发射源发射的电子的路径的开口; 以及栅电极，其包括覆盖所述开口的石墨烯片。

公开(公告)号：KR1020010032492A

公开(公告)日：2001-04-25

申请号：KR1020007005734

申请日：1998-12-11

Applicant: 어드밴스드 비젼 테크놀러지스 인코포레이티드

Inventor： 포터,마이클디.

IPC: H01J1/02

CPC classification number: H01J29/94 ,  H01J2201/30423 ,  H01J2329/00

Abstract: 자체게터링전자필드방사기(30)는전자방사용낮은일함수물질로형성되는제 1 부분(40)과, 저저항전도체및 게터링면으로작용하는일체형제 2 부분(50)을가진다. 기판에평행하게낮은일함수게터링물질의박막을배치함으로서, 그리고낮은일함수물질의박막과접촉하면서기판에평행하게저저항게터링물질의박막을배치함으로서, 자체게터링방사기(30)가형성된다. 자체게터링방사기(30)는횡방향필드방사장치(10)에사용하기에특히좋다. 선호되는방사기구조는가늘어지는변부(60)를가지고, 저저항물질과게터링변부(55) 너머로작은거리만큼연장되는낮은일함수물질의돌출부를가진다. 제작공정(S1-S6)은초소형필드방사장치제작중 자체게터링전자필드방사기의형성을위해특히적합하다.

公开(公告)号：KR1020150026365A

公开(公告)日：2015-03-11

申请号：KR1020130105099

申请日：2013-09-02

Applicant: 삼성전자주식회사 ,  금오공과대학교 산학협력단

Inventor： 이동구 ,  박상현 ,  김용철 ,  김일환 ,  정태원

IPC: H01J1/30

CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J2201/30423 ,  H01J2201/30461

Abstract: 개시된 전계 방출 소자는 캐소드 전극과, 상기 캐소드 전극에 지지된 전자 방출원을 포함하는 에미터; 상기 에미터 주위에 마련되고 상기 전자 방출원으로부터 방출된 전자의 통로인 개구를 형성하는 절연 스페이서; 상기 개구 주위에 배치되는 게이트 전극;을 포함하며, 상기 전자 방출원은 상기 캐소드 전극에 상기 개구를 향하여 세워진 형태로 지지된 다수의 그래핀 박막을 포함한다.

Abstract translation: 本发明提供能够在低栅极电压下高效率地抽出许多电子的场致发射元件，以及制造场致发射元件的发射极的方法。 所公开的场发射元件包括：阴极电极; 包括由阴极电极支撑的电子发射源的发射极; 绝缘间隔件，其布置在发射器周围并形成作为从电子发射源发射的电子的路径的开口; 以及设置在开口周围的栅电极。 电子发射源包括由阴极支撑的多个石墨烯薄膜，其形状朝向开口竖立。