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公开(公告)号：KR1019900003928B1
公开(公告)日：1990-06-04
申请号：KR1019870002867
申请日：1987-03-27
Applicant: 한국과학기술연구원
IPC: G01N27/12
Abstract: A semiconductor gas sensor comprises 20-30 wt.% In2O3, 19-29 wt.% SnO2, and 50 wt.% Al2O3. The gas sensor can be used for detecting methane, propane and butane gas, etc.
Abstract translation: 半导体气体传感器包括20-30重量％的In2O3，19-29重量％的SnO2和50重量％的Al2O3。 气体传感器可用于检测甲烷，丙烷和丁烷气等
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公开(公告)号：KR100445105B1
公开(公告)日：2004-08-21
申请号：KR1020010066053
申请日：2001-10-25
Applicant: 한국과학기술연구원 , 주식회사 다산 씨.앤드.아이
IPC: C23C14/46
CPC classification number: H01J37/317 , H01J2237/0812 , H01J2237/316
Abstract: A surface smoothing device and method thereof which flattens a surface of a sample by irradiating ionized gas of cluster state comprises: an operating gas supplying device for supplying operating gas; a diffusion chamber connected to a convergent and divergent nozzle which changes the operating gas supplied from the operating gas supplying device into cluster state; a source chamber including a skimmer connected to the diffusion chamber for extracting a part of the operating gas in cluster state, and an ionizing device for ionizing the operating gas of cluster state selected by the skimmer; an acceleration chamber including a lens for increasing a density of the cluster ion beam current, and an accelerating device for accelerating the cluster ion; and a process chamber in which the accelerated cluster ion is irradiated on a sample of ITO thin film to flatten the surface of the sample.
Abstract translation: 一种表面平滑装置及其方法，其通过照射簇状态的离子化气体来使试样表面平坦化，所述表面平滑装置及其方法包括：用于供应工作气体的工作气体供应装置; 扩散室，其连接到将从工作气体供给装置供给的工作气体变为团簇状态的会聚和发散喷嘴; 源腔室，其包括连接到扩散腔室以用于提取处于集群状态的部分工作气体的撇渣器和用于电离由撇渣器选择的集群状态的工作气体的电离装置; 加速室，其包括用于增加所述簇离子束电流的密度的透镜以及用于加速所述簇离子的加速装置; 以及处理室，其中加速的簇离子照射在ITO薄膜的样本上以使样本的表面平坦化。
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公开(公告)号：KR100421800B1
公开(公告)日：2004-03-10
申请号：KR1020010017301
申请日：2001-04-02
IPC: H01L21/324
Abstract: PURPOSE: A method for fabricating a zinc oxide semiconductor is provided to improve an electric characteristic by activating a dopant included in a zinc oxide layer. CONSTITUTION: A zinc oxide layer including a dopant is deposited on a silicon substrate or a sapphire substrate. In order to from an n type zinc oxide semiconductor, the dopant selected from a group of Al, In, Ga, and B or an oxide including Al, In, Ga, and B is added to the zinc oxide layer. In order to from a p type zinc oxide semiconductor, the dopant selected from a group of Li, Na, K, N, P, As, and Ni or an oxide including Li, Na, K, N, P, As, and Ni is added to the zinc oxide. The substrate including the zinc oxide layer is loaded into a thermal processing reactor. The dopant of the zinc oxide layer is activated by performing the thermal process for the zincs oxide layer under atmosphere of one element selected from H, O, N, Ar, NO, N2O, and NO2 gas.
Abstract translation: 目的：提供一种用于制造氧化锌半导体的方法，以通过激活包含在氧化锌层中的掺杂剂来改善电特性。 构成：包括掺杂剂的氧化锌层沉积在硅衬底或蓝宝石衬底上。 为了从n型氧化锌半导体中将选自Al，In，Ga和B的组中的掺杂剂或包含Al，In，Ga和B的氧化物添加到氧化锌层中。 为了从p型氧化锌半导体中选择Li，Na，K，N，P，As，Ni或包含Li，Na，K，N，P，As和Ni的氧化物的掺杂剂， 添加到氧化锌中。 将包含氧化锌层的基材装载到热处理反应器中。 通过在选自H，O，N，Ar，NO，N 2 O和NO 2气体中的一种元素的气氛下对锌氧化物层执行热处理来活化氧化锌层的掺杂剂。
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公开(公告)号：KR100329810B1
公开(公告)日：2002-03-25
申请号：KR1020007005975
申请日：1998-12-04
Applicant: 한국과학기술연구원
IPC: C23C14/46
Abstract: 이온빔 (IB)을 이용한 고분자, 금속 및 세라믹 재료의 표면처리장치가 개시되어 있는데, 표면처리되는 재료에 인가되는 전압 (22)을 공급하고 제어함으로써 재료에 조사되는 이온빔 (IB) 에너지를 조절할 수 있고, 이온빔이 조사되는 진공조 영역에서의 반응성 가스 진공도를 이온빔이 발생되는 영역에서의 것과 다르게 하고, 또한 양면 조사 처리 및 연속 처리를 적용할 수 있다.
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Patent Agency Ranking
公开(公告)号：KR100329806B1
公开(公告)日：2002-03-25
申请号：KR1019990032788
申请日：1999-08-10
Applicant: 한국과학기술연구원
IPC: G01N27/407
Abstract: 본발명은가스센서에관한것으로서, 더욱상세하게는가스의농도에따라전기전도도의변화를감지하도록박·후막형으로제조한 WO₃및 p형반도성물질의고용체감지막(3)을가지는가스센서에관한것이다. 본발명은종래의가스센서의응답특성및 회복속도를증진시키는데목적이있다. 본발명은기판(1)과, 상기기판상면에소정의패턴으로형성되는전극(2)과, 상기전극이형성된기판의상면에형성되는 WO₃및 p형반도성물질의고용체박·후막형감지막(3)과, 상기기판하면에형성되는히터(4)와, 상기히터가형성된기판의하면에형성되는절연재(5)로이루어지는가스센서를제공하여 NO와같은자동차배기가스, 기타연소장치의배기가스이외에도암모니아등과같은감지가능한가스를감지한다. n형반도성을갖는 WO에 p형반도성물질을첨가하여막(3)의소결성을높임과동시에전기적으로막 내에존재하는전도성캐리어의양을조절하여산화성가스, 예컨대 NO와의반응성을증진시킨다. 상기감지막은 CuO, NiO, CoO, CrO, CuO, MoO, BiO, MnO및 PrO으로이루어지는 p형반도성물질군 중에서어느하나이상이첨가된고용체로이루어진다. 여기서, 상기 p형반도성물질의첨가량은 0.1 - 90 wt%일수 있고, 상기감지막은 0.1 - 5 ㎛의박막또는 5 - 100㎛의후막일수 있다.
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公开(公告)号：KR100319496B1
公开(公告)日：2002-01-05
申请号：KR1019990039968
申请日：1999-09-17
Applicant: 한국과학기술연구원
IPC: C04B35/622
Abstract: 본발명은블레이드를통과한세라믹스후막의건조시이 후막을용매세척법에따라세척하기위한유기용매를담을수 있는용매세척조를본체에구비한수계테이프캐스팅장치에관한것이다. 이와같은장치를사용함으로써, 산업현장의연속공정에적용가능한용매세척법을수계테이프의제조에효과적으로적용할수 있다. 블레이드를통과한성형된후막이건조되기전에용매세척법에의해물을유기용매로치환하여세라믹스후막공정의건조속도가향상되고후막이갈라지는현상이현격히줄어들기때문에, 산업현장에서다양한테이프캐스팅법이물을사용하는수계로전환가능하게될 것이며, 이에따라유기용매에의한환경문제가해결되고작업환경개선에도움을줄 것이다.
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公开(公告)号：KR100305906B1
公开(公告)日：2001-11-30
申请号：KR1019980054848
申请日：1998-12-14
Applicant: 주식회사 삼양홀딩스 , 한국과학기술연구원
IPC: C08J7/00
Abstract: 본 발명은 이온빔을 이용하여 친수성으로 표면개질된 고분자 콘택트렌즈 및 그 표면개질방법에 관한 것으로, 고분자 콘택트렌즈 표면으로, 반응성 기체를 유입시키면서 2000 eV 이하의 에너지를 가진 이온빔을 조사시킴으로써 상기 이온빔으로 고분자 콘택트렌즈의 표면을 활성화시키면서 활성화된 고분자 콘택트렌즈의 표면과 상기 반응성 기체를 반응시켜 그 표면에 친수성기를 형성시키는 고분자 콘택트렌즈의 표면개질방법과 그에 의해 표면개질된 고분자 콘택트렌즈를 제공한다.
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公开(公告)号：KR1020010027968A
公开(公告)日：2001-04-06
申请号：KR1019990039968
申请日：1999-09-17
Applicant: 한국과학기술연구원
IPC: C04B35/622
CPC classification number: C04B41/53 , C04B2235/6025
Abstract: PURPOSE: An aqueous tape casting line equipped with a solvent washing vessel is provided to transform various tape casting methods into an aqueous tape casting method, thereby solving environmental problems due to organic solvents and improving working environment by substituting organic solvent for water in a solvent washing method before the formed back film is dried so as to improve drying rate of the ceramics back film process and remarkably reduce crack of the back film. CONSTITUTION: The tape casting line is equipped with a solvent washing vessel (2) capable of containing organic solvent for washing the back film in the solvent washing method while a ceramics back film (3) which is passed through a blade (5) is being dried.
Abstract translation: 目的：提供一种装有溶剂洗涤容器的水性胶带铸造线，以将各种胶带铸造方法转变成水性带铸造方法，从而解决有机溶剂中的环境问题，并通过在溶剂洗涤中用有机溶剂代替水来改善工作环境 在形成的背膜干燥之前的方法，以改善陶瓷背膜工艺的干燥速度并显着减少背膜的裂纹。 构成：带状铸造线配备有溶剂洗涤容器（2），其能够在溶剂洗涤方法中含有用于洗涤背膜的有机溶剂，而通过刀片（5）的陶瓷背膜（3）为 干燥。
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公开(公告)号：KR1020000041712A
公开(公告)日：2000-07-15
申请号：KR1019980057666
申请日：1998-12-23
Applicant: 주식회사 삼양홀딩스 , 한국과학기술연구원
IPC: C08J7/00
Abstract: PURPOSE: A hydrophilic polymer membrane the surface of which is modified is provided which has still lower wetting angle compared with common polymer membrane, does not destroy the surface structure of the membrane to preserve the characteristics of the membrane, and has excellent reproducibility, by irradiating ion beam to the membrane. CONSTITUTION: A hydrophilic polymer membrane the surface of which is modified is prepared from a surface-modifying method of the polymer membrane using a vacuum chamber equipped with a gas inlet, an ion source and a substrate holder, characterized in that it comprises a step of fixing a polymer membrane to the substrate holder; a step of introducing a reactive gas into the vacuum chamber through the gas inlet; a step of activating the surface of the polymer membrane by irradiating an ion beam having an energy of 2000 eV or less, generated from the ion source; and a step of reacting the activated surface of the polymer membrane with the reactive gas to form a hydrophilic group on the surface thereof.
Abstract translation: 目的：提供其表面改性的亲水性聚合物膜，其与普通聚合物膜相比具有较低的润湿角度，不破坏膜的表面结构以保持膜的特性，并且通过照射具有优异的再现性 离子束到膜。 构成：使用配备有气体入口，离子源和衬底保持器的真空室的聚合物膜的表面改性方法制备其表面被改性的亲水性聚合物膜，其特征在于它包括以下步骤： 将聚合物膜固定到衬底保持器; 通过气体入口将反应性气体引入真空室的步骤; 通过照射由离子源产生的具有2000eV以下的能量的离子束来活化聚合物膜的表面的工序; 以及使聚合物膜的活化表面与反应性气体反应以在其表面上形成亲水基团的步骤。
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