METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER
    174.
    发明申请
    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER 审中-公开
    腐蚀氧化硅层的方法

    公开(公告)号:WO2008015434A1

    公开(公告)日:2008-02-07

    申请号:PCT/GB2007/002932

    申请日:2007-08-02

    Inventor: O'HARA, Anthony

    CPC classification number: B81C1/00476 B81C2201/0133

    Abstract: A controlled method of releasing a microstructure comprising a silicon oxide layer located between a substrate layer and a layer to be released from the silicon oxide layer is described. The method comprises the step of exposing the silicon oxide layer to a hydrogen fluoride vapour in a process chamber having controlled temperature and pressure conditions. A by- product of this reaction is water which also acts as a catalyst for the etching process. It is controlled employment of this inherent water source that results in a condensed fluid layer forming, and hence etching taking place, only on the exposed surfaces of the oxide layer. The described method therefore reduces the risk of the effects of capillary induced stiction within the etched microstructure and/or corrosion within the microstructure and the process chamber itself.

    Abstract translation: 描述了释放包括位于衬底层和要从氧化硅层释放的层之间的氧化硅层的微结构的控制方法。 该方法包括在具有受控温度和压力条件的处理室中将氧化硅层暴露于氟化氢蒸汽的步骤。 该反应的副产物是还用作蚀刻工艺的催化剂的水。 控制这种固有水源的使用,导致仅在氧化物层的暴露表面上形成冷凝的流体层,并且因此进行蚀刻。 因此,所描述的方法降低了在微结构和处理室本身内的蚀刻微结构内的毛细管诱导静电和/或腐蚀的影响的风险。

    METHOD FOR IMPROVING THE POLYSILICON STRUCTURES OF A MEMS DEVICE BY MASKING TO INHIBIT ANODIC ETCHING OF THE MEMS POLYSILICON STRUCTURES
    175.
    发明申请
    METHOD FOR IMPROVING THE POLYSILICON STRUCTURES OF A MEMS DEVICE BY MASKING TO INHIBIT ANODIC ETCHING OF THE MEMS POLYSILICON STRUCTURES 审中-公开
    通过掩蔽抑制MEMS多晶硅结构的阳极蚀刻来改善MEMS器件的多晶硅结构的方法

    公开(公告)号:WO0248023A3

    公开(公告)日:2003-08-21

    申请号:PCT/US0151334

    申请日:2001-10-25

    Applicant: OMM INC

    CPC classification number: B81C1/00801 B81C2201/0133 B81C2201/016

    Abstract: A method is provided for fabricating a MEMS device on a workpiece by forming a mercaptain mask (306) on a gold structure (309). The mask (306) is used to inhibit anodic etching of polysilicon structures (303) during the acid etch process that is used to remove the oxide dielectric layer from the workpiece to expose the polysilicon structures of the MEMS device (303) to allow their movement. The mercaptain can be utilised to adhere to the exposed gold surface (309) to form a self-mask (306) on the gold surface (309). As such, a workpiece having numerous gold surfaces, such as numerous optomechanical switches, each having various types of gold structures, can be placed in a mercaptain solution. The mercaptain selectively coats the gold surfaces to form self-adhering mercaptain masks on all the exposed gold surfaces.

    Abstract translation: 提供了一种通过在金结构(309)上形成巯基掩模(306)来在工件上制造MEMS器件的方法。 掩模(306)用于在酸蚀刻工艺期间抑制多晶硅结构(303)的阳极蚀刻,所述酸蚀刻工艺用于从工件去除氧化物介电层以暴露MEMS器件(303)的多晶硅结构以允许其移动 。 可以使用巯基粘附到暴露的金表面(309)以在金表面(309)上形成自掩模(306)。 因此,可以将具有多个金表面的工件,例如各种具有各种类型的金结构的多个光学机械开关放置在巯基溶液中。 巯基选择性地涂覆金表面以在所有暴露的金表面上形成自粘的巯基掩模。

    A METHOD FOR MAKING A MICROMECHANICAL DEVICE BY REMOVING A SACRIFICIAL LAYER WITH MULTIPLE SEQUENTIAL ETCHANTS
    176.
    发明申请
    A METHOD FOR MAKING A MICROMECHANICAL DEVICE BY REMOVING A SACRIFICIAL LAYER WITH MULTIPLE SEQUENTIAL ETCHANTS 审中-公开
    一种通过多个顺序蚀刻去除真菌层制备微生物器件的方法

    公开(公告)号:WO02095800A3

    公开(公告)日:2003-02-13

    申请号:PCT/US0216224

    申请日:2002-05-22

    Abstract: An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate (10); providing a sacrificial layer (20) directly or indirectly on the substrate; providing one or more micromechanical structural layers (30) on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer (20), the first etch comprising providing an etchant gas and energizing (42) the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material.

    Abstract translation: 公开了一种诸如用于形成微机械装置的蚀刻方法。 该方法的一个实施例是用于释放微机械结构,包括提供衬底(10); 在衬底上直接或间接提供牺牲层(20); 在牺牲层上提供一个或多个微机械结构层(30); 执行第一蚀刻以去除牺牲层(20)的一部分,所述第一蚀刻包括提供蚀刻剂气体并激发(42)蚀刻剂气体,以便使蚀刻剂气体在物理或化学和物理上移除部分 的牺牲层; 执行第二蚀刻以去除牺牲层中的附加牺牲材料,第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。

    A METHOD FOR MAKING A MICROMECHANICAL DEVICE BY REMOVING A SACRIFICIAL LAYER WITH MULTIPLE SEQUENTIAL ETCHANTS
    177.
    发明申请
    A METHOD FOR MAKING A MICROMECHANICAL DEVICE BY REMOVING A SACRIFICIAL LAYER WITH MULTIPLE SEQUENTIAL ETCHANTS 审中-公开
    一种通过多个顺序蚀刻去除真菌层制备微生物器件的方法

    公开(公告)号:WO2002095800A2

    公开(公告)日:2002-11-28

    申请号:PCT/US2002/016224

    申请日:2002-05-22

    IPC: H01L

    Abstract: An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.

    Abstract translation: 公开了一种诸如用于形成微机械装置的蚀刻方法。 该方法的一个实施例是用于释放微机械结构,其包括:在衬底上直接或间接提供牺牲层; 在所述牺牲层上提供一个或多个微机械结构层; 执行第一蚀刻以去除牺牲层的一部分,所述第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体,以允许蚀刻剂气体在物理或化学和物理上去除牺牲层的该部分; 执行第二蚀刻以去除牺牲层中的附加牺牲材料,第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。 该方法的另一实施例是用于在衬底上或衬底内蚀刻硅材料,包括:执行第一蚀刻以去除硅的一部分,第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体以允许蚀刻剂 物理或化学和物理的气体去除硅的部分; 执行第二蚀刻以去除附加的硅,第二蚀刻包括提供蚀刻剂气体,其化学地但不物理地蚀刻附加的硅。

    METHOD FOR TOPOGRAPHICAL PATTERNING OF A DEVICE
    178.
    发明申请
    METHOD FOR TOPOGRAPHICAL PATTERNING OF A DEVICE 审中-公开
    方法用于设备的地形图案

    公开(公告)号:WO02006061A1

    公开(公告)日:2002-01-24

    申请号:PCT/US2001/022037

    申请日:2001-07-13

    Abstract: The device of the present invention facilitates engaging mating elements, such as actuators used in disc drives, with a pattern on the device. The improved device includes arcuate edges between at least one of the sidewalls in the pattern and the surface of the device. The arcuate edges minimize some of the fracturing of the device that typically occurs when a mating element is inserted on or into the device. The present invention also relates to a method of fabricating a device. The method comprises positioning a mask in the form of a pattern relative to the device, and then etching the pattern into a surface on the device to form at least one sidewall and an arcuate edge such that the arcuate edge extends between the surface on the device and one of the sidewalls.

    Abstract translation: 本发明的装置有助于将配合元件(例如在盘驱动器中使用的致动器)与设备上的图案相啮合。 改进的装置包括在图案中的至少一个侧壁和装置的表面之间的弧形边缘。 弧形边缘最小化当将配合元件插入或插入设备时通常发生的装置的一些破裂。 本发明还涉及一种制造装置的方法。 所述方法包括以相对于所述装置的图案的形式定位掩模,然后将所述图案刻蚀到所述装置上的表面中以形成至少一个侧壁和弓形边缘,使得所述弧形边缘在所述装置上的所述表面之间延伸 和一个侧壁。

    PROCÉDÉ DE RÉALISATION DE MOTIFS
    180.
    发明申请
    PROCÉDÉ DE RÉALISATION DE MOTIFS 审中-公开
    生产图案的方法

    公开(公告)号:WO2016102628A1

    公开(公告)日:2016-06-30

    申请号:PCT/EP2015/081090

    申请日:2015-12-22

    Abstract: L'invention concerne notamment un procédé de réalisation de motifs dans une couche à graver (410), à partir d'un empilement comprenant au moins la couche à graver (410) et une couche de masquage(420) surmontant la couche à graver (410), la couche de masquage(420) présentant au moins un motif (421), le procédé comprenant au moins: a) une étape de modification d'au moins une zone (411) de la couche à graver (410) par implantation d'ions (430) au droit de l'au moins un motif (421); b) au moins une séquence d'étapes comprenant: b1) une étape d'élargissement (440) de l'au moins un motif (421) selon un plan dans lequel s'étend principalement la couche à graver (410); b2) une étape de modification d'au moins une zone (411', 411'') de la couche à graver (410) par implantation d'ions (430) au droit de l'au moins un motif (421) élargi, l'implantation étant effectuée sur une profondeur inférieure à la profondeur d'implantation de l'étape précédente de modification; c) une étape de retrait (461, 462) des zones modifiées (411, 411', 411''), le retrait comprenant une étape de gravure des zones modifiées (411, 411', 411'') sélectivement aux zones non modifiées (412) de la couche à graver (410).

    Abstract translation: 本发明特别涉及一种用于从至少要被蚀刻的层(410)和覆盖在待蚀刻层(410)上的一个掩模层(420)至少包括待蚀刻层(410)的叠层(410)中产生图案的方法 410),所述掩模层(420)具有至少一种图案(421),所述方法至少包括:a)通过离子注入(410)修饰待蚀刻层(410)的至少一个区域(411)的步骤 430)与所述至少一个图案(421)一致; b)至少一个步骤序列,其包括:b1)在待蚀刻的层(410)主要延伸的平面中扩大所述至少一个图案(421)的步骤(440) b2)通过与所述至少一个放大图案(421)一致的离子注入(430)修饰待蚀刻层(410)的至少一个区域(411',411“)的步骤,所述注入被携带 在比前述修改步骤的植入深度小的深度处; c)去除改质区域(411,411',411“)的步骤(461,462),该去除步骤包括选择性地将修饰区域(411,411',411”)蚀刻到非修饰区域的步骤, 要蚀刻的层(410)的改性区域(412)。

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