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公开(公告)号：KR100576703B1
公开(公告)日：2006-05-03
申请号：KR1020030074115
申请日：2003-10-23
Applicant: 한국전자통신연구원
IPC: H01L29/78
CPC classification number: H01L49/003
Abstract: 본 발명은 340 K(68 ℃) 부근에서 절연체로부터 금속으로의 상전이(Metal-Insulator Transition: MIT) 특성을 가지는 VO
2 (Vanadium Dioxide) 박막을 채널 층 재료로 이용한 금속-절연체 상전이 스위칭 소자 제작에 관한 것이다. 이 트랜지스터는 실리콘 기판, 실리콘 기판위에 위치하는 바닥 게이트 방식의 게이트, 게이트 위에 위치하며 일정 전압 인가에 의하여 정공(hole)을 VO
2 박막에 유기시키고 열적으로 안정한 특성을 가지는 게이트 절연막, 게이트 절연막 위에 위치한 VO
2 채널 층, 및 VO
2 채널 층 좌우에 전기적으로 연결된 소스(Source) 및 드레인(Drain)을 포함하고 있다. 그리고, 게이트에 높은 전압을 인가할 경우에 소자 내부에서 발생되는 열에 의하여 소자 특성이 저하되는 것을 방지함으로써, 큰 전류 이득을 얻을 수 있도록 설계된 것이 특징이다. 그리고 상기 구성을 갖는 제작된 트랜지스터의 IV 특성 측정에서 높은 전류 이득이 최초로 관측 되었다.
VO2 채널 층, 모트(mott) 전계효과 트랜지스터, 고 전류 이득형 트랜지스터, 열전도-
公开(公告)号：KR1020050038834A
公开(公告)日：2005-04-29
申请号：KR1020030074115
申请日：2003-10-23
Applicant: 한국전자통신연구원
IPC: H01L29/78
CPC classification number: H01L49/003
Abstract: 본 발명은 340 K(68 ℃) 부근에서 절연체로부터 금속으로의 상전이(Metal-Insulator Transition: MIT) 특성을 가지는 VO
2 (Vanadium Dioxide) 박막을 채널 층 재료로 이용한 금속-절연체 상전이 스위칭 소자 제작에 관한 것이다. 이 트랜지스터는 실리콘 기판, 실리콘 기판위에 위치하는 바닥 게이트 방식의 게이트, 게이트 위에 위치하며 일정 전압 인가에 의하여 정공(hole)을 VO
2 박막에 유기시키고 열적으로 안정한 특성을 가지는 게이트 절연막, 게이트 절연막 위에 위치한 VO
2 채널 층, 및 VO
2 채널 층 좌우에 전기적으로 연결된 소스(Source) 및 드레인(Drain)을 포함하고 있다. 그리고, 게이트에 높은 전압을 인가할 경우에 소자 내부에서 발생되는 열에 의하여 소자 특성이 저하되는 것을 방지함으로써, 큰 전류 이득을 얻을 수 있도록 설계된 것이 특징이다. 그리고 상기 구성을 갖는 제작된 트랜지스터의 IV 특성 측정에서 높은 전류 이득이 최초로 관측 되었다.-
公开(公告)号：KR1020040047174A
公开(公告)日：2004-06-05
申请号：KR1020020075291
申请日：2002-11-29
Applicant: 한국전자통신연구원
IPC: H01L27/04
CPC classification number: H01G7/06 , H01G4/1227
Abstract: PURPOSE: A UHF(ultrahigh frequency) variable device with a ferroelectric/paraelectric barium-strontium-titanium oxide thin film is provided to reduce deformation or loss of data and decrease amplification of an electric wave that is radiated through an antenna by reducing a loss of the electric wave in an active antenna system or a satellite communication system. CONSTITUTION: A substrate(100) is prepared. The ferroelectric/paraelectric barium-strontium-titanium oxide thin film(110) of an orientation (111) is formed on the substrate by a laser deposition method. The substrate is a MgO substrate.
Abstract translation: 目的：提供具有铁电/顺电钡锶 - 氧化钛薄膜的UHF（超高频）可变器件，以减少数据的变形或损失，并减少通过天线辐射的电波的放大，减少损耗 有源天线系统或卫星通信系统中的电波。 构成：制备基材（100）。 通过激光沉积法在衬底上形成取向（111）的铁电/顺电钡 - 锶 - 氧化钛薄膜（110）。 衬底是MgO衬底。
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公开(公告)号：KR100401124B1
公开(公告)日：2003-10-10
申请号：KR1020010013208
申请日：2001-03-14
IPC: H01P1/203
CPC classification number: H01P11/007 , H01P1/203 , H01P1/212 , Y10S505/701 , Y10S505/866
Abstract: Disclosed is a high-temperature superconductor low-pass filter for removing broadband harmonics in a wireless communication system. The high-temperature superconductor low-pass filter includes a coupled line section and a transmission line section, in which the coupled line section is connected in parallel with the transmission line section. The coupled line section has two microstrip open-stub type parallel stripe lines stacked on a high-temperature superconductor, and the transmission line section has one stripe line. Since the high-temperature superconductor low-pass filter has attenuation poles at a stopband, it has stopband characteristics to 7-8 times wider than a cutoff frequency. The high-temperature superconductor low-pass filter can easily remove sub-harmonics which are inevitably occurred in the wireless communication system.
Abstract translation: 公开了一种用于消除无线通信系统中的宽带谐波的高温超导体低通滤波器。 高温超导体低通滤波器包括耦合线路部分和传输线部分，其中耦合线路部分与传输线部分并联连接。 耦合线路部分具有堆叠在高温超导体上的两条微带开路短柱型平行条线，并且传输线部分具有一条条线。 由于高温超导体低通滤波器在阻带处具有衰减极点，所以它具有比截止频率宽7-8倍的阻带特性。 高温超导体低通滤波器可以容易地去除在无线通信系统中不可避免地发生的次谐波。
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公开(公告)号：KR1020030063007A
公开(公告)日：2003-07-28
申请号：KR1020020003529
申请日：2002-01-22
Applicant: 한국전자통신연구원
IPC: G02B26/00
CPC classification number: H01S3/06791 , H01S3/106 , H01S3/107 , H01S3/108
Abstract: PURPOSE: An optical oscillator of a millimeter wave bandwidth is provided to realize an excellent optical oscillator with high modulation frequency at 60, 120 and 160 GHz where the optical oscillator can not be manufactured. CONSTITUTION: An optical oscillator of a millimeter wave bandwidth includes a nonlinear circuit, an output circuit and a 50% coupler. The nonlinear circuit is provided with a wavelength coupler, an optical amplification optical fiber, a distribution compensation optical fiber and a linear polarizer. The output circuit is provided with a distribution compensation optical fiber, an optical direction indicator and a 10% coupler. In the optical oscillator, the optical directional indicator is further included for blocking the optical path. And, the distribution compensation optical fiber determines the wavelength range.
Abstract translation: 目的：提供毫米波带宽的光学振荡器，以实现在60,120和160 GHz下具有高调制频率的优异的光学振荡器，其中无法制造光学振荡器。 构成：毫米波带宽的光学振荡器包括非线性电路，输出电路和50％耦合器。 非线性电路设置有波长耦合器，光放大光纤，分布补偿光纤和线性偏振器。 输出电路配有分配补偿光纤，光学指示器和10％耦合器。 在光学振荡器中，进一步包括用于阻挡光路的光学指向性指示器。 而且，分布补偿光纤决定了波长范围。
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Patent Agency Ranking
公开(公告)号：KR100372889B1
公开(公告)日：2003-02-19
申请号：KR1020000078269
申请日：2000-12-19
Applicant: 한국전자통신연구원
IPC: H01L39/22
Abstract: PURPOSE: A sloped edge Josephson junction device and a method for manufacturing the same are provided to form easily a high temperature superconductive sloped edge junction by using a high superconductor thin film of a cooper oxide. CONSTITUTION: The first electrode layer(12) having a sloped edge and the first insulating layer(13) with a sloped edge are formed sequentially on a substrate(11). A modification layer(16) is formed on the sloped edge of the first electrode layer(12). The second electrode layer(17) and the second insulating layer(18) are formed on the first electrode layer(12) including the modification layer(16) and the first insulating layer(13), respectively. The first and the second electrode layers(12,13) are formed with a copper oxide superconductor.
Abstract translation: 目的：提供一种斜边约瑟夫森结器件及其制造方法，以通过使用氧化铜的高超导体薄膜容易地形成高温超导斜坡边界结。 构成：具有倾斜边缘的第一电极层（12）和具有倾斜边缘的第一绝缘层（13）依次形成在基板（11）上。 在第一电极层（12）的倾斜边缘上形成修改层（16）。 第二电极层（17）和第二绝缘层（18）分别形成在包括改性层（16）和第一绝缘层（13）的第一电极层（12）上。 第一和第二电极层（12,13）由氧化铜超导体形成。
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公开(公告)号：KR1020020073051A
公开(公告)日：2002-09-19
申请号：KR1020010013208
申请日：2001-03-14
IPC: H01P1/203
CPC classification number: H01P11/007 , H01P1/203 , H01P1/212 , Y10S505/701 , Y10S505/866
Abstract: PURPOSE: A high temperature superconductor LPF(Low Pass Filter) for removing broadband harmonics is provided to control easily an attenuation pole and extend a frequency range of a stopband to 10 times of a cutoff frequency by using a transmission line section and a coupled line section. CONSTITUTION: A couple of parallel conductive lines(244,245) is laminated on a high temperature superconductor epitaxial layer. The lead line(246) is extended from the first parallel conductive line(244) to an input terminal. The second lead line(247) is extended from the second parallel conductive line(245) to an output terminal. A conductive line(243) is used for connecting the first parallel conductive line(244) with the second parallel conductive line(245). A transmission line section(241) is formed with the parallel conductive lines(244,245). A coupled line section(242) is formed with the conductive line(243). A ratio of length of the transmission line section(241) to the coupled line section(242) is 2 to 1.
Abstract translation: 目的：提供用于去除宽带谐波的高温超导体LPF（低通滤波器），通过使用传输线部分和耦合线路部分来容易地控制衰减极点并将阻带的频率范围扩展到截止频率的10倍 。 构成：将一对平行的导线（244,245）叠层在高温超导体外延层上。 引线（246）从第一并行导线（244）延伸到输入端子。 第二引线（247）从第二平行导线（245）延伸到输出端子。 导线（243）用于将第一并联导线（244）与第二平行导线（245）连接起来。 传输线部分（241）形成有平行导线（244,245）。 耦合线路部分（242）形成有导线（243）。 传输线部分（241）与耦合线部分（242）的长度比为2比1。
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公开(公告)号：KR100337642B1
公开(公告)日：2002-05-23
申请号：KR1019990027011
申请日：1999-07-06
Applicant: 한국전자통신연구원
IPC: H01S5/30
CPC classification number: G01Q60/22
Abstract: 본발명은근접장탐침을이용한광혼합밀리미터파생성장치에관한것이다. 원리는제 1 및제 2 레이저에서나온레이저광을레이저빔 결합기를이용하여탐침직경이 0.05 내지 0.1㎛인근접장광혼합용광섬유탐침에주입한후, 탐침에서출력된레이저빔이주변으로산란되지않도록초고속반도체소자와광섬유간의거리를줄일수 있다. 또한, 레이저빔의직경이 0.1㎛정도이므로, 초고속반도체소자가최고로우수한특성영역을찾고, 두레이저광의파장차이에해당하는밀리미터파를생성하므로써, 밀리미터파신호의해상도및 잡음지수를개선할수 있는근접장탐침을이용한광혼합밀리미터파생성장치가개시된다.
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公开(公告)号：KR1020010008923A
公开(公告)日：2001-02-05
申请号：KR1019990027011
申请日：1999-07-06
Applicant: 한국전자통신연구원
IPC: H01S5/30
CPC classification number: G01Q60/22
Abstract: PURPOSE: An apparatus for producing an optical heterodyne millimetric wave using a near-field probe is provided to improve the resolution of the heterodyne light and, to improve the noise factor. CONSTITUTION: An apparatus for producing an optical heterodyne millimetric wave using a near-field probe is used to measure the property of a micro device. A feedback controller(101) designate a reference point for adjusting a distance between an optical fiber probe for near-field optical heterodyne and a property measurement device(106). A photo-diode(107) senses a laser beam of a HeNe-laser(111) for adjusting the distance. The property of the micro device is accurately measured by connecting an electrode contact area of the property measurement device to a micro probe(110) for applying a DC voltage to the electrode. A laser beam coupler(113) couples two laser beams of different frequency of a fist laser(112A) and a second laser(112B). The coupled laser beam is injected to the optical fiber probe. Also, the laser beam coupler mixes a millimetric signal with an output signal of a local oscillator(109). A spectrum analyzer(104) measures an intermediate frequency conversion signal of the mixed signal, and a semiconductor parameter analyzer(105) measures a parameter of the millimetric signal produced by the light of the optical fiber.
Abstract translation: 目的：提供一种使用近场探针产生光学外差毫米波的装置，以提高外差光的分辨率，并提高噪声系数。 构成：使用近场探针制造光学外差毫米波的装置用于测量微器件的性质。 反馈控制器（101）表示用于调整用于近场光学外差的光纤探针与属性测量装置（106）之间的距离的参考点。 光电二极管（107）感测用于调整距离的HeNe激光器（111）的激光束。 通过将性能测量装置的电极接触面连接到用于向电极施加直流电压的微型探针（110）来精确测量微器件的性质。 激光束耦合器（113）耦合第一激光器（112A）和第二激光器（112B）的不同频率的两个激光束。 将耦合的激光束注入到光纤探针中。 此外，激光束耦合器将毫米信号与本地振荡器（109）的输出信号混合。 频谱分析器（104）测量混合信号的中频变换信号，半导体参数分析仪（105）测量由光纤产生的毫米信号的参数。
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公开(公告)号：KR1020000033367A
公开(公告)日：2000-06-15
申请号：KR1019980050207
申请日：1998-11-23
Applicant: 한국전자통신연구원
IPC: H01L39/24
CPC classification number: H01L39/2435 , C23C14/087 , C23C14/3464 , C23C14/505 , C23C14/541 , C30B23/02 , C30B29/22 , C30B29/225
Abstract: PURPOSE: To form a thin film of high temperature superconductor on both sides of an oxide substrate having large surface areas. CONSTITUTION: Two sintering targets(1,2) such as high temperature superconductor oxide YBa2Cu3O7-x are placed in a thin film depositing apparatus(11). A mono-crystalline oxide substrate(6) having large surface areas, such as, for example, MgO, SrTiO3, LaAlO3, Al2O3, LaSrGaO4, is fixed to a supporting structure(5), passing through separators(9,10). The substrate(6) is then rotated with the supporting structure(5) between the separators(9,10). While two heater(3,4) applies heat to both sides of the substrate(6), plasma generated from the targets(1,2) is sprayed on both sides of the substrate(6) and thereby a target material is deposited onto the substrate(6).
Abstract translation: 目的：在具有大表面积的氧化物基板的两面上形成高温超导体薄膜。 构成：将两个烧结靶（1,2）如高温超导体氧化物YBa2Cu3O7-x放置在薄膜沉积装置（11）中。 具有大表面积的单晶氧化物衬底（6）例如MgO，SrTiO 3，LaAlO 3，Al 2 O 3，LaSrGaO 4被固定到支撑结构（5）上，通过隔板（9,10）。 然后，基板（6）与分隔件（9,10）之间的支撑结构（5）一起旋转。 当两个加热器（3,4）对基板（6）的两侧施加热量时，从靶（1,2）产生的等离子体喷射在基板（6）的两侧，从而将目标材料沉积到 底物（6）。
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