Abstract:
A non-volatile memory having a non-volatile memory array arranged as a plurality of sectors each containing an array of non-volatile memory cells. The non-volatile memory includes independent read and write paths and selection circuitry for each sector that enables a read operation from one of the sectors during a program or erase operation to one of the other sectors.
Abstract:
A reticle (130) provides an image pattern and compensates for a lens error in a photolithographic system. The reticle is structurally modified using image displacement data indicative of the lens error. The reticle can be structurally modified by adjusting the configuration (or layout) of radiation-transmitting regions (132, 134) for instance by adjusting a chrome pattern on the top surface of a quartz base. Alternatively, the reticle can be structurally modified by adjusting the curvature of the reticle, for instance by providing a chrome pattern on the top surface of a quartz base and grinding away portions of the bottom surface of the quartz base. The image displacement data may also vary as a function of lens heating so that the reticle compensates for lens heating associated with the reticle pattern.
Abstract:
A method of manufacturing a semiconductor device to negate the effects on the device performance caused by defects on the silicon substrate. An oxygen-doped amorphous silicon layer is deposited onto the gate region of the semiconductor device and can have a thickness of less than 5 nanometers. The amorphous silicon provides a conformal layer over the defects on the silicon substrate. The oxygen doping of the amorphous silicon maintains the conformality of the amorphous silicon layer during subsequent processing by preventing the formation of large amorphous silicon grains during a crystallization process. The resulting silicon oxide layer has increased uniformity and can have a thickness of less than 10 nanometers.
Abstract:
A carrier-recovery loop for a receiver in a communication system with features that facilitate initialization of the loop. The carrier-recovery loop is a PLL that uses a feedback signal to keep a recovery oscillator phase-locked to the carrier of a received signal. In the present invention, an initializing value of the feedback signal is stored in a memory and provided to a digitally controlled recovery oscillator (DCO). This initializing value brings the recovered signal to an initial frequency that approximates the carrier frequency. When the receivers start to acquire a phase-lock with the carrier, the carrier-recovery loop is in a condition close to the desired phase lock. Preparing the DCO in this manner imparts a significant improvement to the carrier-recovery loop. The response time for the loop to acquire a phase lock depends in part on its initial frequency offset from the carrier. In general, reducing this initial offset reduces the loop's acquisition time. By thus anticipating the frequency of the carrier, this carrier-recovery loop can have an improved acquisition time to reach phase lock. The initialization value of the feedback signal can be generated by recording a sample of the feedback signal when the carrier-recovery loop is phase-locked to a received signal or to an on-board crystal oscillator. The invention also includes a mechanism to correct drifts in the crystal oscillator's frequency.
Abstract:
A data cache configured to perform store accesses in a single clock cycle is provided. The data cache speculatively stores data within a predicted way of the cache after capturing the data currently being stored in that predicted way. During a subsequent clock cycle, the cache hit information for the store access validates the way prediction. If the way prediction is correct, then the store is complete. If the way prediction is incorrect, then the captured data is restored to the predicted way. If the store access hits in an unpredicted way, the store data is transferred into the correct storage location within the data cache concurrently with the restoration of data in the predicted storage location. Each store for which the way prediction is correct utilizes a single clock cycle of data cache bandwidth. Additionally, the way prediction structure implemented within the data cache bypasses the tag comparisons of the data cache to select data bytes for the output. Therefore, the access time of the associative data cache may be substantially similar to a direct-mapped cache access time. The present data cache is therefore suitable for high frequency superscalar microprocessors.
Abstract:
A decimation device has a sampler, a memory and an adder in the decimation stage. The sampler and the adder form a partial sample for storage in the memory at a sample time. At a next sample time the sum of a current sample and the partial sample is output from the decimation stage. The partial sample is formed by adding the first sample to a value equal to twice a second sample obtained after the first sample.
Abstract:
The present invention discloses a system and method for communicating real-time, multimedia data between a host CPU and an external multimedia device using a pair of first-in-first-out (FIFO) buffers. Data from the CPU is stored in a first FIFO buffer and subsequently retrieved by the multimedia device. Data from the multimedia device is stored in a second FIFO buffer and subsequently retrieved by the CPU for processing. The FIFO buffers provide indications to the CPU for the CPU to store more data in the first FIFO buffer and for the CPU to retrieve data from the second FIFO buffer.
Abstract:
A CMOS transmission line equalizer is provided for receiving distorted signals transmitted through a transmission line and for compensating for the signal distortion. The equalizer has a transfer function characteristic with a single pole and a single zero. The transfer function includes a mirroring ratio circuit (CMR) for controlling the ratio between the single pole and the single zero. The mirroring ratio circuit is controlled by transistor size ratio. The single zero serves to cancel the dominant pole in the transfer function of the transmission line so as to compensate for the signal distortion caused by the transmission line.
Abstract:
The application of a dissimilar anti-reflective coating on a conductive layer during photolithographic processing is avoided, as by modifying a portion of the upper surface (21A) of the conductive layer (21) to exhibit anti-reflective properties. In an embodiment of the present invention, impurity ions are implanted into a portion of the upper surface (21A) of an aluminum or an aluminum-alloy conductive layer (21) to render the upper portion (21A) substantially amorphous and, hence, decrease its reflectivity to perform an anti-reflective function.
Abstract:
A near full duplex portable handset speakerphone comprises: a microprocessor; a hands-free receiver register connected to the microprocessor; a hands-free transmit register connected to the microprocessor; a ROM having a speakerphone operation algorithm, the ROM connected to the microprocessor; a first analog-to-digital converter connected to the hands-free receiver register; a second analog-to-digital converter connected to the hands-free transmit register; a first programmable digital attenuator connected to the microprocessor and to a speaker; and a second programmable digital attenuator connected to the microprocessor and to a microphone, wherein near full duplex communication is achieved without digital signal processing. In another feature of the invention, the hands-free registers provide a digital representation of the speech volume in each direction to the microprocessor. The microprocessor monitors the speech signal levels, calculates digital volume comparisons in order to make speech gain decisions for optimal sound, and digitally adjusts the gains in the two speech paths to the upper half of their maximum values.