公开(公告)号：US20230249963A1

公开(公告)日：2023-08-10

申请号：US18304383

申请日：2023-04-21

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Ting-Jung Chen ,  Shih-Wei Lin

IPC: B81C1/00

CPC classification number: B81C1/00063 ,  B81C1/00523 ,  B81C1/00047 ,  B81C2201/013

Abstract: A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.

公开(公告)号：US11693230B2

公开(公告)日：2023-07-04

申请号：US16762174

申请日：2018-09-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuya Sugimoto ,  Tomofumi Suzuki ,  Kyosuke Kotani

IPC: G02B26/08 ,  G02B7/182 ,  H02N1/00 ,  G02B26/10 ,  B81C1/00

CPC classification number: G02B26/0841 ,  B81C1/00555 ,  G02B7/1821 ,  G02B26/105 ,  H02N1/008 ,  B81B2201/042 ,  B81C2201/013 ,  B81C2201/0174 ,  B81C2201/0198

Abstract: In an optical device, when viewed from a first direction, first, second, third, and fourth movable comb electrodes are respectively disposed between a first support portion and a first end of a movable unit, between a second support portion and a second end of the movable unit, between a third support portion and the first end, and between a fourth support portion and the second end of the movable unit. The first and second support portions respectively include first and second rib portions formed so that the thickness of each of the first and second support portions becomes greater than the thickness of the first torsion bar. The third and fourth support portions respectively include third and fourth rib portions formed so that the thickness of each of the third and fourth support portions becomes greater than the thickness of the second torsion bar.

公开(公告)号：US11684949B2

公开(公告)日：2023-06-27

申请号：US17086311

申请日：2020-10-30

Applicant: BFLY Operations, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: B06B1/02 ,  B81B3/00 ,  B81C1/00 ,  G10K11/18 ,  G10K9/12 ,  B81B7/00

CPC classification number: B06B1/02 ,  B06B1/0292 ,  B81B3/0021 ,  B81B7/0077 ,  B81C1/00158 ,  G10K9/12 ,  G10K11/18 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C2201/013 ,  B81C2203/0118 ,  B81C2203/0735 ,  B81C2203/0771

Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

公开(公告)号：US20190233277A1

公开(公告)日：2019-08-01

申请号：US16379982

申请日：2019-04-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  H01L41/113 ,  B81C1/00 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20180346318A1

公开(公告)日：2018-12-06

申请号：US16042303

申请日：2018-07-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony K. Stamper ,  John G. Twombly

IPC: B81B3/00 ,  H01L41/113 ,  B81C1/00 ,  H01H59/00 ,  G06F17/50 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：US10077184B2

公开(公告)日：2018-09-18

申请号：US15503192

申请日：2015-05-11

Applicant: Wuxi Wio Technology Co., Ltd.

Inventor： Qiao Chen ,  Huikai Xie

IPC: B61B3/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0037 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/033 ,  B81B2201/042 ,  B81B2203/0118 ,  B81B2203/0136 ,  B81C1/00007 ,  B81C1/0015 ,  B81C2201/013 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0822 ,  G02B26/0841 ,  H01G5/16 ,  H02N1/008

Abstract: A MEMS self-aligned high-and-low comb tooth and manufacturing method thereof, the comb tooth having a lifting structure, the lifting structure generating a displacement in the vertical direction to drive the movement of a movable comb tooth or a fixed comb tooth attached thereto. The manufacturing method thereof adopts a silicon wafer, the lifting structure and the comb tooth are sequentially formed on a mechanical structure layer, the fixed comb tooth and the movable comb tooth are formed with the same etching process, and the stress in the lifting structure displaces the fixed comb tooth and the movable comb tooth in the vertical direction, thus forming the self-aligned high-and-low comb tooth.

公开(公告)号：US09998843B2

公开(公告)日：2018-06-12

申请号：US15018625

申请日：2016-02-08

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jung-Huei Peng ,  Chia-Hua Chu ,  Chun-wen Cheng ,  Chin-Yi Cho ,  Li-Min Hung ,  Yao-Te Huang

IPC: H04R31/00 ,  B81C1/00 ,  H04R19/00 ,  H04R19/04

CPC classification number: H04R31/003 ,  B81C1/00158 ,  B81C2201/0125 ,  B81C2201/013 ,  B81C2201/053 ,  B81C2203/036 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006 ,  H04R2201/003 ,  H04R2307/027

Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.

公开(公告)号：US09963340B2

公开(公告)日：2018-05-08

申请号：US14958372

申请日：2015-12-03

Applicant: Honeywell International Inc.

Inventor： Gregory C. Brown

IPC: B81B3/00 ,  G01L9/00 ,  B81C1/00

CPC classification number: B81B3/0051 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2203/0118 ,  G01L9/0047 ,  G01L9/0054 ,  G01L9/0055 ,  G01L19/0618

Abstract: A pressure sensor die assembly comprises a base substrate having a first surface, a stop structure on the first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section including a first cavity and a second cavity surrounding the first cavity; a pressure sensing diaphragm portion having a first thickness and defined by the first cavity; and an over pressure diaphragm portion having a second thickness and defined by the second cavity, the second thickness greater than the first thickness. When an over pressure is applied, at least some area of the pressure sensing diaphragm portion is deflected and supported by the stop structure. As over pressure is increased, the over pressure diaphragm portion deflects and engages with the first surface such that additional area of the pressure sensing diaphragm portion is deflected and supported by the stop structure.

公开(公告)号：US09937528B2

公开(公告)日：2018-04-10

申请号：US15095264

申请日：2016-04-11

Applicant: Texas Instruments Incorporated

Inventor： Peter B. Johnson ,  Ira Oaktree Wygant

IPC: H01B13/00 ,  B06B1/02 ,  H02N1/00 ,  H04R19/00 ,  B81C1/00 ,  B81B7/00

CPC classification number: B06B1/0292 ,  B06B2201/76 ,  B81B7/007 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/036 ,  H02N1/006 ,  H04R19/005 ,  H05K2201/09845 ,  H05K2201/09863

Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device including at least one CMUT element with at least one CMUT cell is formed. A patterned dielectric layer thereon including a thick and a thin dielectric region is formed on a top side of a single crystal material substrate. A second substrate is bonded to the thick dielectric region to provide at least one sealed micro-electro-mechanical system (MEMS) cavity. The second substrate is thinned to reduce a thickness of said second substrate to provide a membrane layer. The membrane layer is etched to form a movable membrane over said MEMS cavity and to remove said membrane layer over said top side substrate contact area. The thin dielectric region is removed from over said top side substrate contact area. A top side metal layer is formed including a trace portion coupling said top side substrate contact area to said movable membrane. From a bottom side surface of said first substrate, etching is performed to open an isolation trench around said single crystal material to form a through-substrate via (TSV) plug of said single crystal material at least under said top side substrate contact area which is electrically isolated from surrounding regions of said single crystal material.

公开(公告)号：US20180072566A1

公开(公告)日：2018-03-15

申请号：US15802789

申请日：2017-11-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: H01P1/10 ,  B81C1/00 ,  H01H59/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.