公开(公告)号：EP3080217A1

公开(公告)日：2016-10-19

申请号：EP14827497.0

申请日：2014-12-11

Applicant: Arkema France ,  Centre National de la Recherche Scientifique ,  Institut Polytechnique de Bordeaux 1 ,  Université de Bordeaux

Inventor： MUMTAZ, Muhammad ,  AISSOU, Karim ,  BROCHON, Cyril ,  CLOUTET, Eric ,  FLEURY, Guillaume ,  HADZIIOANNOU, Georges ,  NAVARRO, Christophe ,  NICOLET, Celia ,  CHEVALIER, Xavier

IPC: C09D153/00 ,  B82Y40/00 ,  H01L21/033

CPC classification number: C09D153/00 ,  B05D1/005 ,  B05D1/28 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y40/00 ,  C08G77/60 ,  G03F7/0002 ,  H01L21/0271 ,  Y10S977/892

Abstract: The invention relates to a method allowing the creation of nanometric structures by self-assembly of block copolymers, of which at least one of the blocks comes from the polymerisation of monomers comprising at least one cyclic entity satisfying formula I where X= Si(R
1 ,R
2 ), Ge(R
1 ,R
2 ); Z= Si(R
3 ,R
4) , Ge(R
3 ,R
4 ), 0, S, C(R
3 ,R
4 ); Y= 0, S, C(R
5 ,R
6) ; and T= 0, S, C(R7,R
8) ; where R
1 , R
2 , R
3 , R
4 , R
5 , R
6 , R
7 , R
8 are selected from hydrogen, the linear, branched, cyclic alkyl groups with or without heteroatoms, and the aromatic groups with or without heteroatoms.

Abstract translation: 本发明涉及一种允许通过嵌段共聚物的自组装形成纳米结构的方法，其中至少一个嵌段来自包含至少一个满足式I的环状实体的单体的聚合，其中X = Si（R 1 ，R 2），Ge（R 1，R 2）; Z = Si（R 3，R 4），Ge（R 3，R 4），O，S，C（R 3，R 4）。 Y = 0，S，C（R 5，R 6）; 和T = 0，S，C（R7，R8）; 其中R 1，R 2，R 3，R 4，R 5，R 6，R 7，R 8选自氢，具有或不具有杂原子的直链，支链环状烷基和具有或不具有杂原子的芳族基团 。

公开(公告)号：EP2981985A1

公开(公告)日：2016-02-10

申请号：EP14779168.5

申请日：2014-04-01

Applicant: Brewer Science, Inc.

Inventor： XU, Kui ,  HOCKEY, Mary Ann ,  GUERRERO, Douglas

IPC: H01L21/027

CPC classification number: H01L21/0331 ,  B81C1/00031 ,  B81C2201/0149 ,  C08F212/08 ,  C08F212/32 ,  C08F293/005 ,  C08F2438/03 ,  C08L33/12 ,  C09D125/08 ,  C09D125/14 ,  C09D125/16 ,  C09D153/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/31138

Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.

Abstract translation: 提供了用于定向自组装（DSA）图案化技术的组合物。 还提供了用于定向自组装的方法，其中将包含嵌段共聚物的DSA组合物施加到基底上，然后自组装形成所需的图案。 嵌段共聚物包括至少两个不同蚀刻速率的块，使得在蚀刻期间选择性地去除一个嵌段（例如，聚甲基丙烯酸甲酯）。 因为较慢的蚀刻块（例如聚苯乙烯）被添加剂改性以进一步减慢该块的蚀刻速率，所以更多的慢速蚀刻块留在后面以将图案完全转移到下面的层。

公开(公告)号：EP2839341A4

公开(公告)日：2015-11-25

申请号：EP13778282

申请日：2013-04-15

Applicant: BREWER SCIENCE INC

Inventor： WANG YUBAO ,  HOCKEY MARY ANN ,  GUERRERO DOUGLAS J ,  KRISHNAMURTHY VANDANA ,  COX ROBERT C

IPC: H01L21/033 ,  B81C1/00 ,  G03F7/00 ,  H01L21/311

CPC classification number: B81C1/0038 ,  B81B1/00 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/26 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  Y10T428/24612 ,  Y10T428/24802

Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.

公开(公告)号：EP2664430A1

公开(公告)日：2013-11-20

申请号：EP12733862.2

申请日：2012-01-13

Applicant: JX Nippon Oil & Energy Corporation ,  Tokyo Institute of Technology

Inventor： MASUYAMA, Satoshi ,  TAKAHASHI, Madoka ,  NISHIMURA, Suzushi ,  FUKUDA, Maki ,  SEKI, Takashi

IPC: B29C33/38 ,  B29C33/42 ,  B29C39/26 ,  B29C59/02 ,  B82B1/00 ,  B82Y40/00 ,  G02B5/18 ,  G03F7/20 ,  H01L21/027 ,  H01L51/50 ,  H05B33/02 ,  B29L11/00

CPC classification number: G02B5/1852 ,  B29C33/3857 ,  B29C33/424 ,  B29C35/0805 ,  B29C43/021 ,  B29C43/36 ,  B29C2035/0827 ,  B29C2043/023 ,  B29D11/00769 ,  B29K2105/0061 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C25D1/10 ,  G02B5/1809 ,  G02B5/1847 ,  G02B27/4266 ,  G03F7/0002 ,  H01L51/52 ,  H01L51/5275 ,  H01L51/56

Abstract: A method for producing a mold includes: applying a block copolymer solution 30 made of first and second polymers on a base member 10; performing a first annealing process at a temperature higher than a glass transition temperature of the block copolymer after drying the coating film; forming a concavity and convexity structure 36 on the base member by removing the second polymer by an etching process; performing a second annealing process of the concavity and convexity structure 36 at a temperature higher than a glass transition temperature of the first polymer; forming a seed layer 40 on the concavity and convexity structure; laminating or stacking a metal layer 50 on the seed layer 40 by an electroforming; and peeling off the metal layer 50 from the base member. The second annealing process enables satisfactory transfer of a concavity and convexity structure 70 on the base member onto the metal layer. Accordingly, there is provided a mold for minute pattern transfer, which is suitable for producing an optical component such as a diffraction grating.

Abstract translation: 一种用于生产模具方法包括：将基体构件10上制成的第一和第二聚合物的嵌段共聚物溶液30; 在比干燥涂层成膜之后的嵌段共聚物的玻璃化转变温度更高的温度下进行第一退火工艺; 通过在蚀刻工艺去除所述第二聚合物形成所述基体上的凹凸结构36; 在比第一聚合物的玻璃化转变温度高的温度下进行的凹凸结构36的第二退火工艺; 上形成凹凸结构的籽晶层40; 层压或通过在电铸在晶种层40上层叠的金属层50; 和剥离从基部构件的金属层50。 第二退火工艺，该基体上的凹凸结构70的令人满意的转印到金属层上。 因此，提供了一种用于微细图案转印的模子，所有这些是适合于在光学部件的制造：诸如衍射光栅。

公开(公告)号：EP2146925B1

公开(公告)日：2013-05-22

申请号：EP08745371.8

申请日：2008-04-09

Applicant: Micron Technology, Inc.

Inventor： MILLWARD, Dan, B.

IPC: B81C1/00 ,  G03F7/00 ,  H01L21/033 ,  H01L21/308 ,  B82Y30/00 ,  B82Y10/00

CPC classification number: H01L21/3086 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/76879 ,  H01L23/544 ,  H01L2924/0002 ,  Y10T428/24182 ,  Y10T428/24612 ,  H01L2924/00

公开(公告)号：EP2254827B1

公开(公告)日：2011-09-28

申请号：EP09721280.7

申请日：2009-03-03

Applicant: Micron Technology, Inc.

Inventor： REGNER, Jennifer, Kahl

IPC: B81C1/00

CPC classification number: B81C1/00031 ,  B05D1/34 ,  B05D3/0254 ,  B05D5/00 ,  B05D5/12 ,  B81C2201/0149 ,  B82Y30/00 ,  C08L53/00 ,  C08L53/005 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  Y10T428/24182 ,  C08L2666/02

Abstract: Methods for fabricating arrays of nanoscaled alternating lamellae or cylinders in a polymer matrix having improved long range order utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 用于制造纳米阵列的方法缩放交替层状或圆柱体在聚合物基质中具有改进的长程有序利用自组装嵌段共聚物，并且提供从合成方法形成的膜和装置。

公开(公告)号：EP2281299A1

公开(公告)日：2011-02-09

申请号：EP09721942.2

申请日：2009-03-03

Applicant: Micron Technology, Inc.

Inventor： MILLWARD, Dan, B. ,  QUICK, Timothy

IPC: H01L21/033 ,  B81C1/00

CPC classification number: H01L21/76828 ,  B81C1/00031 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08F299/02 ,  C08F299/0492 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for fabricating sublithographic, nanoscale microstructures utilizing self-assembling block copolymer, and films and devices formed from these methods are provided.

公开(公告)号：EP2235743A1

公开(公告)日：2010-10-06

申请号：EP09704665.0

申请日：2009-01-15

Applicant: International Business Machines Corporation

Inventor： DALTON, Timothy ,  DORIS, Bruce, B. ,  KIM, Ho-cheol ,  RADENS, Carl

IPC: H01L21/3213

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/0338 ,  Y10T428/24612

Abstract: A first nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running along a first direction is formed from first self-assembling block copolymers within a first layer. The first layer is filled with a filler material and a second layer is deposited above the first layer containing the first nanoscale nested line structure. A second nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running in a second direction is formed from second self-assembling block copolymers within the second layer. The composite pattern of the first nanoscale nested line structure and the second nanoscale nested line structure is transferred into an underlayer beneath the first layer to form an array of structures containing periodicity in two directions.

公开(公告)号：EP2172416A1

公开(公告)日：2010-04-07

申请号：EP08779181.0

申请日：2008-05-28

Applicant: Khartov, Stanislav Viktorovich ,  Nevolin, Vladimir Kirillovich

Inventor： SIMUNIN, Mihail Maksimovich

IPC: B82B1/00 ,  B82B3/00

CPC classification number: B81B7/04 ,  B81B2201/0214 ,  B81C2201/0149 ,  B82Y30/00 ,  G01N29/036 ,  G01N2291/0256

Abstract: Die Erfindung betrifft eine nanoelektromechanische Struktur für verschiedene Anwendungen in der Sensortechnik und der Mikrotechnik sowie ein Verfahren zu ihrer Herstellung. Ist dabei vorgesehen, dass sie folgende Elemente einschließt: mindestens ein steuerbares, stromleitfähiges Element, wenigstens eine Eingangselektrode, die im elektrischen Kontakt mit dem steuerbaren Element steht und wenigstens eine Ausgangselektrode, die vom steuerbaren Element getrennt und mit dem steuerbaren Element elektrostatisch gekoppelt ist, wobei entweder mindestens ein Teil der Ausgangselektrode aus einem Material ausgebildet ist, welches irreversible physikalische oder chemische Änderungen bei physikalischer oder chemischer und durch das steuerbare Element vermittelter Einwirkung bewirkt oder mindestens ein Teil des steuerbaren Elements aus einem Material ausgebildet ist, welches irreversible physikalische oder chemische Änderungen bei physikalischer oder chemischer und durch die Ausgangselektrode vermittelter Einwirkung bewirkt, dann können die Integrationsstufe und die Betriebsfrequenz, die Stabilität, die Empfindlichkeit und die Selektivität erhöht werden.

Abstract translation: 本发明涉及一种用于传感器技术和微工程的各种应用和它们的制备的方法的纳米机电结构。 由此，只要其包括以下元件：至少一个可控的，电流传导元件，至少一个输入电极，其是在与从所述可控元件分开和静电耦合到所述可控元件的可控元件和至少一个输出电极的电接触， 任一个输出电极的一部分被至少一个材料，这会导致在物理或化学不可逆的物理或化学变化的形成，并通过所述可控元件的动作或可控元件的一部分介导的材料来在至少该不可逆的物理或化学变化而形成 物理或化学和由输出电极作用的原因介导的，集成的水平和工作频率，稳定性，灵敏度和选择性可以增加。

公开(公告)号：EP2121514A2

公开(公告)日：2009-11-25

申请号：EP08728282.8

申请日：2008-01-25

Applicant: Micron Technology, Inc.

Inventor： MILLWARD, Dan, B.

IPC: B81C1/00 ,  G03F7/00 ,  H01L21/033

CPC classification number: C23F1/02 ,  B05D3/00 ,  B05D5/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  Y10S438/947

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.