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    BIOPHARMACEUTICAL MANUFACTURING PROCESS AND PRODUCT
    12.
    发明申请
    BIOPHARMACEUTICAL MANUFACTURING PROCESS AND PRODUCT 审中-公开

    公开(公告)号：WO2021154599A1

    公开(公告)日：2021-08-05

    申请号：PCT/US2021/014630

    申请日：2021-01-22

    Applicant: SILCOTEK CORP.

    Inventor： BISCHOF, Jesse ,  HIGGINS, Martin E. ,  WINTER, Thomas

    IPC: B32B15/00 ,  C23C16/04 ,  B01J19/02 ,  A61P43/00

    Abstract: Pharmaceutical manufacturing processes and products are disclosed. A pharmaceutical manufacturing process includes flowing a liquid through a pathway. The liquid contacts a non-polymeric coating on a substrate within the pathway. The substrate is a metal or metallic substrate. A pharmaceutical product is produced by flowing a liquid through a pathway. The liquid contacts a non-polymeric coating on a substrate within the pathway. The substrate is a metal or metallic substrate.

    VAPOR PHASE TREATMENT OF AMORPHOUS CARBON FILMS WITH (PERFLUORO 1,1,2,2 TETRAHYDROALKYL)TRIALKOXYSILANE
    13.
    发明申请
    VAPOR PHASE TREATMENT OF AMORPHOUS CARBON FILMS WITH (PERFLUORO 1,1,2,2 TETRAHYDROALKYL)TRIALKOXYSILANE 审中-公开
    （PERFLUORO 1,1,2,2四氢喹啉酮）三羧酸的蒸气相处理非晶碳膜

    公开(公告)号：WO2014186470A1

    公开(公告)日：2014-11-20

    申请号：PCT/US2014/038006

    申请日：2014-05-14

    Applicant: SILCOTEK CORP.

    Inventor： SMITH, David A. ,  SILVIS, Paul H.

    IPC: B05D5/08 ,  B05D1/00

    CPC classification number: B05D1/60 ,  B05D5/083 ,  C09D5/08

    Abstract: Chemical vapor deposition articles and processes include a chemical vapor deposition functionalization on a material, the material including an sp3 arrangement of carbon. The chemical vapor deposition functionalization is positioned to be contacted by a process fluid, a hydrocarbon, an analyte, exhaust, or a combination thereof. Additionally or alternatively, the chemical vapor deposition functionalization is not of a refrigerator shelf or a windshield.

    Abstract translation: 化学气相沉积制品和方法包括在材料上的化学气相沉积功能化，该材料包括碳的sp3排列。 化学气相沉积功能化被定位成与工艺流体，烃，分析物，排气或其组合接触。 另外或替代地，化学气相沉积功能化不是冰箱架或挡风玻璃。

    COATED ARTICLE AND CHEMICAL VAPOR DEPOSITION PROCESS
    14.
    发明申请
    COATED ARTICLE AND CHEMICAL VAPOR DEPOSITION PROCESS 审中-公开

    公开(公告)号：WO2014011251A3

    公开(公告)日：2014-01-16

    申请号：PCT/US2013/033807

    申请日：2013-03-26

    Applicant: SILCOTEK CORP.

    Inventor： SMITH, David A.

    IPC: B05D1/00

    Abstract: A coated article and a chemical vapor deposition process are disclosed. The coated article includes a functionalized layer applied to the coated article by chemical vapor deposition. The functionalized layer is a layer selected from the group consisting of an oxidized-then-functionalized layer, an organofluoro treated layer, a fluorosilane treated layer, a trimethylsilane treated surface, an organofluorotrialkoxysilanes treated layer, an organofluorosilylhydrides-treated layer, an organofluoro silyl treated layer, a tridecafluoro 1,1,2,2-tetrahydrooctylsilane treated layer, an organofluoro alcohol treated layer, a pentafluoropropanol treated layer, an allylheptafluoroisopropyl ether treated layer, a (perfluorobutyl) ethylene treated layer, a (perfluorooctyl) ethylene treated layer, and combinations thereof. The process includes applying the functionalized layer.

    COATED ARTICLE AND CHEMICAL VAPOR DEPOSITION PROCESS
    15.
    发明申请
    COATED ARTICLE AND CHEMICAL VAPOR DEPOSITION PROCESS 审中-公开
    涂层制品和化学气相沉积工艺

    公开(公告)号：WO2014011251A2

    公开(公告)日：2014-01-16

    申请号：PCT/US2013033807

    申请日：2013-03-26

    Applicant: SILCOTEK CORP

    Inventor： SMITH DAVID A

    IPC: B32B15/082

    CPC classification number: B05D1/60 ,  C23C16/0209 ,  C23C16/0272 ,  C23C16/46 ,  Y10T428/31544 ,  Y10T428/31663

    Abstract: A coated article and a chemical vapor deposition process are disclosed. The coated article includes a functionalized layer applied to the coated article by chemical vapor deposition. The functionalized layer is a layer selected from the group consisting of an oxidized-then-functionalized layer, an organofluoro treated layer, a fluorosilane treated layer, a trimethylsilane treated surface, an organofluorotrialkoxysilanes treated layer, an organofluorosilylhydrides-treated layer, an organofluoro silyl treated layer, a tridecafluoro 1,1,2,2-tetrahydrooctylsilane treated layer, an organofluoro alcohol treated layer, a pentafluoropropanol treated layer, an allylheptafluoroisopropyl ether treated layer, a (perfluorobutyl) ethylene treated layer, a (perfluorooctyl) ethylene treated layer, and combinations thereof. The process includes applying the functionalized layer.

    Abstract translation: 公开了涂覆制品和化学气相沉积工艺。 涂覆制品包括通过化学气相沉积施加到涂覆制品上的官能化层。 官能化层是选自由氧化后功能化层，有机氟化处理层，氟硅烷处理层，三甲基硅烷处理表面，有机氟三烷氧基硅烷处理层，有机氟甲硅烷基氢化物处理层，有机氟甲硅烷基处理层 （全氟丁基）乙烯处理层，（全氟辛基）乙烯处理层，以及（全氟辛基）乙烯处理层，和（全氟丁基）乙烯处理层， 它们的组合。 该过程包括应用功能化层。

    半導體製造方法
    17.
    发明专利
    半導體製造方法 审中-公开
    半导体制造方法

    公开(公告)号：TW201612350A

    公开(公告)日：2016-04-01

    申请号：TW104126087

    申请日：2015-08-11

    Applicant: 席爾科泰克公司 ,  SILCOTEK CORP.

    Inventor： 麥澤拉 詹姆斯B ,  MATTZELA, JAMES B.

    IPC: C23C16/00 ,  C23C16/54

    CPC classification number: C23C8/18 ,  C23C16/325 ,  C23C16/56

    Abstract: 本發明描述了半導體製造方法。所述半導體製造方法的一個實施例包括提供通過經化學氣相沉積使二甲基矽烷分解而形成的層，所述層由流體材料施加；然後將所述層定位在系統中以便生產半導體產品。除此之外或作為另外一種選擇，生產所述半導體產品和/或所述層位於襯底上。

    Abstract in simplified Chinese: 本发明描述了半导体制造方法。所述半导体制造方法的一个实施例包括提供通过经化学气相沉积使二甲基硅烷分解而形成的层，所述层由流体材料施加；然后将所述层定位在系统中以便生产半导体产品。除此之外或作为另外一种选择，生产所述半导体产品和/或所述层位于衬底上。

    Recubrimiento, artículo y método de deposición química de vapor
    19.
    发明专利
    Recubrimiento, artículo y método de deposición química de vapor 未知

    公开(公告)号：ES2859458T3

    公开(公告)日：2021-10-04

    申请号：ES10771619

    申请日：2010-10-26

    Applicant: SILCOTEK CORP

    Inventor： SMITH DAVID A ,  MATTZELA JAMES B ,  SILVIS PAUL H ,  BARONE GARY A

    IPC: C23C16/32 ,  B05D7/24 ,  C23C8/10 ,  C23C16/56

    Abstract: Un método (200) de deposición química de vapor térmica, comprendiendo el método (200): la preparación de (202) un sustrato (100) en una cámara de deposición química de vapor; la descomposición térmica (204) de dimetilsilano en la cámara de deposición química de vapor para formar un recubrimiento (102), realizándose la descomposición térmica en ausencia de energías de deposición adicionales, tales como campos de plasma y microondas, y en las siguientes condiciones: - a una presión de entre 6,8948x10-3 MPa (6,8948x10-2 bar (1,0 l.p.c.a.)) y 0,68948 MPa (6,8948 bar (100 l.p.c.a.)), preferentemente a una presión de entre 3,4474x10-2 MPa (3,4474x10-1 bar (5 l.p.c.a.)) y aproximadamente 0,27579 MPa (2,7579 bar (40 l.p.c.a.)); y - a una temperatura de entre 300 °C y 600 °C; y - durante un tiempo de 30 minutos a 24 horas.

    Diffusion-rate-limited thermal chemical vapor deposition coating
    20.
    发明专利
    Diffusion-rate-limited thermal chemical vapor deposition coating 未知

    公开(公告)号：AU2017200337A1

    公开(公告)日：2017-08-10

    申请号：AU2017200337

    申请日：2017-01-18

    Applicant: SILCOTEK CORP

    Inventor： VEZZA THOMAS F ,  CONDO STEVEN A ,  DESKEVICH NICHOLAS P ,  MATTZELA JAMES B ,  SILVIS PAUL H

    IPC: C23C16/455 ,  C23C16/02 ,  C23C16/24

    Abstract: Thermal chemical vapor deposition coated articles and thermal chemical vapor deposition processes are disclosed. The article includes a substrate and a thermal chemical vapor deposition coating on the substrate. The thermal chemical vapor deposition coating includes properties from being produced by diffusion-rate-limited thermal chemical vapor deposition. The thermal chemical vapor deposition process includes introducing a gaseous species to a vessel and producing a thermal chemical vapor deposition coating on an article within the vessel by a diffusion-rate-limited reaction of the gaseous species. 107--,,. 115

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