公开(公告)号：KR1020090006349A

公开(公告)日：2009-01-15

申请号：KR1020070069598

申请日：2007-07-11

Applicant: 고려대학교 산학협력단

Inventor： 박용두 ,  정기석 ,  박종혁 ,  선경

IPC: A61L27/52 ,  A61L27/54 ,  A61K49/22 ,  A61L24/00

CPC classification number: A61L27/52 ,  A61K49/226 ,  A61L24/0031 ,  A61L27/54

Abstract: A hydrogel manufacturing method for the tissue regeneration is provided to make cell and tissue grow in the three dimensional space which is similar to the human body. A hydrogel manufacturing method for the tissue regeneration comprises: a first step for performing patterning a three dimensional space(10) in which tissue or cell can grow after solidifying the hydrogel(100); and a second step for injecting the composite including cell and growth factor in the patterned structure. The composite comprises the hydrogel with concentration lower than that of the hydrogel outside the patterned space.

Abstract translation: 提供了用于组织再生的水凝胶制造方法，以使细胞和组织在类似于人体的三维空间中生长。 用于组织再生的水凝胶制造方法包括：第一步骤，用于对固化水凝胶（100）后组织或细胞可以生长的三维空间（10）进行图案化; 以及在图案化结构中注入包含细胞和生长因子的复合物的第二步骤。 复合材料包含浓度低于图案化空间外的水凝胶的水凝胶。

公开(公告)号：KR1020080052251A

公开(公告)日：2008-06-11

申请号：KR1020070061450

申请日：2007-06-22

Applicant: 한국전자통신연구원 ,  고려대학교 산학협력단

Inventor： 문승언 ,  김은경 ,  이홍열 ,  박종혁 ,  박강호 ,  김종대 ,  박소정 ,  김규태

IPC: H01L21/027 ,  B82Y40/00

CPC classification number: H01L21/0274 ,  B82Y40/00 ,  G03F7/70283 ,  G03F7/705

Abstract: A method for manufacturing an electronic device using a nanowire is provided to reduce a manufacturing cost and a manufacturing time for the electronic device by reducing a process using an E-beam. An electrode is formed on a substrate(S11). Plural nanowires are applied on the substrate on which the electrode is formed(S12). An image with respect to the substrate on which the nanowire and the electrode are formed is captured(S13). A virtual connection line connecting the nanowire to the electrode is drawn on the image by using an electrode pattern simulated through a computer program(S14). A photoresist for an E-beam is applied onto the substrate(S15). The photoresist formed on a position corresponding to the virtual connection line and the electrode pattern is removed by an E-beam lithography process(S16). A metal layer is deposited on the substrate(S17). The photoresist remaining on the substrate is removed by a lift-off process(S18).

Abstract translation: 提供一种使用纳米线制造电子装置的方法，通过减少使用电子束的处理来降低电子装置的制造成本和制造时间。 在基板上形成电极（S11）。 在形成电极的基板上施加多个纳米线（S12）。 拍摄相对于其上形成有纳米线和电极的基板的图像（S13）。 通过使用通过计算机程序模拟的电极图案，在图像上画出将纳米线连接到电极的虚拟连接线（S14）。 将用于电子束的光致抗蚀剂施加到基板上（S15）。 通过电子束光刻处理去除在与虚拟连接线和电极图案对应的位置上形成的光致抗蚀剂（S16）。 在基板上沉积金属层（S17）。 通过剥离工艺去除残留在基板上的光致抗蚀剂（S18）。

公开(公告)号：KR1020080052250A

公开(公告)日：2008-06-11

申请号：KR1020070061440

申请日：2007-06-22

Applicant: 한국전자통신연구원 ,  고려대학교 산학협력단

Inventor： 이홍열 ,  문승언 ,  김은경 ,  박종혁 ,  박강호 ,  김종대 ,  김규태 ,  이재우 ,  유혜연 ,  허정환

IPC: H01L29/78 ,  B82Y10/00

CPC classification number: H01L29/0669 ,  B82Y10/00 ,  H01L21/02603

Abstract: A method for fabricating a nano wire array device is provided to embody a large-scale nano wire array device even when a nano wire is not parallel with an electrode line by selectively etching a nano wore on a substrate and by patterning an electrode line in a manner that the electrode becomes vertical to the electrode line to improve a probability that the electrode is connected to the nano wire. A nano wire solution including a nano wire(50) is deposited on a substrate. A first etch region of a stripe type is formed on the substrate to pattern the nano wire. A drain electrode line(100) and a source electrode line(200) are formed at both sides of the patterned nano wire, parallel with each other. One end of a plurality of drain electrodes(110) is connected to the drain electrode line wherein the drain electrode comes in contact with at least one nano wire. One end of a plurality of source electrodes(210) is connected to the source electrode line wherein the source electrode comes in contact with the nano wire in contact with the drain electrode. A second etch region is formed between the pair of drain electrodes and source electrodes so that the pair of drain electrodes and source electrodes don't contact each other electrically. An insulation layer(800) is formed on the substrate. A gate electrode(300) is formed on the insulation layer, disposed between the source and drain electrodes in contact with the nano wire.

Abstract translation: 提供一种制造纳米线阵列器件的方法，即使当纳米线不与电极线并联时，通过选择性地蚀刻衬底上的纳米穿孔并且通过将电极线图案化，以体现大规模纳米线阵列器件 电极变得垂直于电极线的方式，以提高电极连接到纳米线的可能性。 包括纳米线（50）的纳米线溶液沉积在基底上。 在衬底上形成条纹型的第一蚀刻区域以对纳米线进行图案化。 在图案化的纳米线的两侧，彼此平行地形成漏电极线（100）和源电极线（200）。 多个漏电极（110）的一端连接到漏极电极线，其中漏电极与至少一个纳米线接触。 多个源极（210）的一端与源电极线连接，源极与漏极接触的纳米线接触。 在一对漏电极和源电极之间形成第二蚀刻区域，使得该对漏电极和源极电极不彼此接触。 在基板上形成绝缘层（800）。 栅电极（300）形成在绝缘层上，设置在与纳米线接触的源极和漏极之间。