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公开(公告)号：KR1020080052251A
公开(公告)日：2008-06-11
申请号：KR1020070061450
申请日：2007-06-22
Applicant: 한국전자통신연구원 , 고려대학교 산학협력단
IPC: H01L21/027 , B82Y40/00
CPC classification number: H01L21/0274 , B82Y40/00 , G03F7/70283 , G03F7/705
Abstract: A method for manufacturing an electronic device using a nanowire is provided to reduce a manufacturing cost and a manufacturing time for the electronic device by reducing a process using an E-beam. An electrode is formed on a substrate(S11). Plural nanowires are applied on the substrate on which the electrode is formed(S12). An image with respect to the substrate on which the nanowire and the electrode are formed is captured(S13). A virtual connection line connecting the nanowire to the electrode is drawn on the image by using an electrode pattern simulated through a computer program(S14). A photoresist for an E-beam is applied onto the substrate(S15). The photoresist formed on a position corresponding to the virtual connection line and the electrode pattern is removed by an E-beam lithography process(S16). A metal layer is deposited on the substrate(S17). The photoresist remaining on the substrate is removed by a lift-off process(S18).
Abstract translation: 提供一种使用纳米线制造电子装置的方法，通过减少使用电子束的处理来降低电子装置的制造成本和制造时间。 在基板上形成电极（S11）。 在形成电极的基板上施加多个纳米线（S12）。 拍摄相对于其上形成有纳米线和电极的基板的图像（S13）。 通过使用通过计算机程序模拟的电极图案，在图像上画出将纳米线连接到电极的虚拟连接线（S14）。 将用于电子束的光致抗蚀剂施加到基板上（S15）。 通过电子束光刻处理去除在与虚拟连接线和电极图案对应的位置上形成的光致抗蚀剂（S16）。 在基板上沉积金属层（S17）。 通过剥离工艺去除残留在基板上的光致抗蚀剂（S18）。
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公开(公告)号：KR102122883B1
公开(公告)日：2020-06-15
申请号：KR1020170169001
申请日：2017-12-11
Applicant: 고려대학교 산학협력단
IPC: G06Q30/02
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公开(公告)号：KR101213139B1
公开(公告)日：2012-12-18
申请号：KR1020100130511
申请日：2010-12-20
Applicant: 고려대학교 산학협력단
IPC: H01L21/28 , H01L29/786
Abstract: 플렉서블기판상의미세전극간격형성방법은, 플렉서블기판상의미리설정된복수의영역에전극층을형성하는단계, 및그림자효과(shdow effect)를이용하여형성된전극층들사이의미리설정된영역에전극층들중 일부와연결된연장전극층을증착하여형성하는단계를포함한다. 그림자효과를이용하여이미형성된전극의일측에연장된전극을추가로형성함으로써, 공정단계가간단하고공정비용이적게들어대량생산이가능하면서도, 아세톤등을이용한화학공정이필요없어플렉서블기판에도적용가능하게된다.
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公开(公告)号：KR101147314B1
公开(公告)日：2012-05-18
申请号：KR1020100104029
申请日：2010-10-25
Applicant: 고려대학교 산학협력단
IPC: H01L21/3205 , H01L21/28
CPC classification number: H01L23/4824 , B81C1/00166 , H01L24/06 , H01L2924/00013 , H01L2924/01322 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
Abstract: Provided is a vertical electrode structure using a trench and a method of manufacturing the vertical electrode structure. The method of forming a vertical electrode structure using a trench includes steps of: forming the trench on a predetermined region of a semiconductor substrate; and forming electrode layers in predetermined regions of inner and outer portions of the trench. In this manner, the electrode deposition in the vertical direction is established by using the trench, so that it is possible to form a deposited electrode having a size of several hundred nm or less by a short processing time and a low processing cost.
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Patent Agency Ranking
公开(公告)号：KR101179143B1
公开(公告)日：2012-09-07
申请号：KR1020100103829
申请日：2010-10-25
Applicant: 고려대학교 산학협력단
IPC: G01N27/12 , G01N27/414 , H01L29/78
Abstract: 가스 검출 장치, 및 방법이 개시된다. 가스 검출 장치는 전류 인가부, 자계 인가부, 전압 측정부, 및 가스 검출부를 포함한다. 전계 인가부는 나노선에 전류를 인가하고, 자계 인가부는 전류의 방향과 수직 방향 성분의 자계를 나노선에 인가하고, 전압 측정부는 나노선 상에서 전류 및 자계 방향과 각각 수직인 방향의 전압을 측정하며, 가스 검출부는 측정된 전압값을 이용하여 나노선에 접촉하는 가스를 검출한다. 이와 같이, 나노선을 이용한 가스 검출에 있어서, 홀 효과를 이용함으로써, 나노선과 전극 사이에 존재하는 접촉 저항의 영향을 받지 않고 효과적으로 가스 센싱을 수행할 수 있게 된다.
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公开(公告)号：KR1020120069107A
公开(公告)日：2012-06-28
申请号：KR1020100130511
申请日：2010-12-20
Applicant: 고려대학교 산학협력단
IPC: H01L21/28 , H01L29/786
CPC classification number: H01L21/28 , H01L29/41733
Abstract: PURPOSE: A method for forming a fine electrode gap on a flexible substrate is provided to simplify a process by additionally forming an extended electrode on one side of an electrode using a shadow effect. CONSTITUTION: An electrode layer is formed on a plurality of preset areas on a flexible substrate(S110). A substrate angle is controlled at a preset angle(S120). An extended electrode layer is formed on a preset area between electrode layers using a shadow effect(S130). Deposition time is controlled according to preset time to control the thickness of the extended electrode layer(S140).
Abstract translation: 目的：提供一种在柔性基板上形成精细电极间隙的方法，以通过使用阴影效应另外在电极的一侧上形成延伸电极来简化工艺。 构成：在柔性基板上的多个预设区域上形成电极层（S110）。 将基板角度控制在预设角度（S120）。 使用阴影效应在电极层之间的预设区域上形成延伸电极层（S130）。 根据预设时间控制沉积时间，以控制延伸电极层的厚度（S140）。
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公开(公告)号：KR1020120042359A
公开(公告)日：2012-05-03
申请号：KR1020100104029
申请日：2010-10-25
Applicant: 고려대학교 산학협력단
IPC: H01L21/3205 , H01L21/28
CPC classification number: H01L23/4824 , B81C1/00166 , H01L24/06 , H01L2924/00013 , H01L2924/01322 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
Abstract: PURPOSE: A vertical electrode structure which uses a trench and a manufacturing method thereof are provided to perform a deposition process when a substrate is inclined to a predetermined direction, thereby effectively controlling a distance between electrodes. CONSTITUTION: A trench is formed on a predetermined region of a semiconductor substrate(S110). The semiconductor substrate is inclined to a predetermined direction(S120). An electrode layer is respectively formed on a predetermined region inside and outside of the trench(S130). A predetermined liquid material is sprayed on the substrate(S140). A solidified material in which the electrode layer is transferred is separated from the substrate(S150).
Abstract translation: 目的：提供一种使用沟槽的垂直电极结构及其制造方法，用于当基板倾斜到预定方向时执行沉积处理，从而有效地控制电极之间的距离。 构成：在半导体衬底的预定区域上形成沟槽（S110）。 半导体衬底沿预定方向倾斜（S120）。 在沟槽的内部和外部的预定区域上分别形成电极层（S130）。 将预定的液体材料喷涂在基板上（S140）。 将电极层转印的固化材料与基板分离（S150）。
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公开(公告)号：KR1020120042236A
公开(公告)日：2012-05-03
申请号：KR1020100103829
申请日：2010-10-25
Applicant: 고려대학교 산학협력단
IPC: G01N27/12 , G01N27/414 , H01L29/78
CPC classification number: G01N27/12 , G01N27/414 , H01L29/0669 , H01L29/78
Abstract: PURPOSE: A gas detecting device and a method thereof are provided to efficiently sense a gas by using a nano-wire without influences of a contact resistance between the nano-wire and extrude by using a hall effect. CONSTITUTION: A gas detecting device(100) comprises a current applying part(110), a magnetic field applying part(120), a voltage measuring part(130), and a gas detecting part(140). The current applying part applies currents to the nano-wire. The magnetic field applying part applies a magnetic field perpendicular to a direction of the current to the nano-wire. The voltage measuring part measures voltages respectively perpendicular to the direction of the current and magnetic field on the nano-wire. The gas detecting part detects gas contacted to the nano-wire by using the measured voltage value.
Abstract translation: 目的：提供一种气体检测装置及其方法，其通过使用纳米线而有效地感测气体，而不受纳米线之间的接触电阻和通过霍尔效应拉伸的影响。 构成：气体检测装置（100）包括电流施加部（110），磁场施加部（120），电压测量部（130）和气体检测部（140）。 电流施加部分向纳米线施加电流。 磁场施加部分将与电流方向垂直的磁场施加到纳米线。 电压测量部分测量分别垂直于纳米线上电流和磁场方向的电压。 气体检测部使用测定的电压值来检测与纳米线接触的气体。
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公开(公告)号：KR1020090059568A
公开(公告)日：2009-06-11
申请号：KR1020070126490
申请日：2007-12-07
Applicant: 한국전자통신연구원
IPC: H01L21/20 , H01L29/84 , H01L21/203 , H01L21/205
CPC classification number: C23C16/047 , C23C16/40
Abstract: A method for selectively depositing a metal oxide nano material and a gas sensor using the same are provided to improve crystallization through a rapid thermal process by using a micro heater and to remove the moisture attached on the surface of a nano line. A substrate removing a central region is provided. A membrane(20) is formed in an upper part of the substrate. A micro-heater electrode(40) is formed in the upper part of the membrane of the central region. An insulating layer(30) covering the micro heater is formed in the upper part of the membrane. A sensing electrode(50) is formed in the upper part of the insulating layer of the micro heater electrode part. The metal oxide nano material is deposited in an upper part of the sensing electrode.
Abstract translation: 提供了选择性地沉积金属氧化物纳米材料的方法和使用其的气体传感器，以通过使用微加热器通过快速热处理来改善结晶，并除去附着在纳米线表面上的水分。 提供去除中心区域的衬底。 膜（20）形成在基板的上部。 微加热器电极（40）形成在中心区域的膜的上部。 覆盖微加热器的绝缘层（30）形成在膜的上部。 感测电极（50）形成在微加热器电极部分的绝缘层的上部。 金属氧化物纳米材料沉积在感测电极的上部。
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