公开(公告)号：KR1020100061702A

公开(公告)日：2010-06-08

申请号：KR1020107006567

申请日：2008-09-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마시타준 ,  가베요시로 ,  기타가와주니치

IPC: H05H1/46 ,  H01L21/31 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32495

Abstract: Provided is a plasma processing apparatus for plasma-processing a substrate to be processed. The plasma processing apparatus is provided with a metallic processing container (2) which forms a processing space (1) for performing plasma processing; a substrate placing table (3), which is arranged in the processing space (1) for placing a substrate (W) to be processed; a quartz member (4a), which shields a side wall of the metallic processing container (2) from the processing space (1), and has an lower end which extends downward from the substrate placing surface of the substrate placing table (3); an annular quartz member (6), which is arranged between the bottom surface of the quartz member (4a) and the bottom wall (2b) of the metallic processing container (2), and blocks the bottom wall (2b) of the metallic processing container (2) from the processing space (1); and a processing gas introducing section for introducing a processing gas into the processing space (1) from the vicinity of the outer circumference of the substrate placing table (3).

Abstract translation: 提供了一种等离子体处理装置，用于对待处理的基板进行等离子体处理。 等离子体处理装置设置有形成用于进行等离子体处理的处理空间（1）的金属处理容器（2） 布置在处理空间（1）中以放置待处理的基板（W）的基板放置台（3） 将金属加工容器（2）的侧壁与处理空间（1）进行屏蔽的石英部件（4a），并且具有从基板载置台（3）的基板载置面朝下方延伸的下端部; 布置在石英件（4a）的底表面和金属加工容器（2）的底壁（2b）之间的环形石英件（6），并且将金属加工件的底壁（2b） 来自处理空间（1）的容器（2）; 以及处理气体导入部，用于将处理气体从基板载置台（3）的外周附近引入处理空间（1）。

公开(公告)号：KR1020090058002A

公开(公告)日：2009-06-08

申请号：KR1020097006461

申请日：2007-09-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 시오자와도시히코 ,  가베요시로 ,  고바야시다카시 ,  기타가와주니치 ,  이사가즈히로

IPC: H01L21/316 ,  H01L21/76 ,  H01L29/78

CPC classification number: H01L21/76229 ,  H01J37/32192 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662 ,  H01L21/7621 ,  H01L21/2255

Abstract: A silicon oxide film forming method includes a step of placing an object to be processed and having a surface having a projecting/recessed pattern and containing silicon in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen at a proportion of 5 to 20% under a processing pressure of 267 to 400 Pa in the processing vessel, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.

Abstract translation: 氧化硅膜形成方法包括将待处理物体放置在等离子体处理装置的处理容器中的具有突出/凹陷图案并含有硅的表面的步骤，从处理气体产生等离子体的步骤，所述处理气体含有 处理容器中处理压力为267〜400Pa的比例为5〜20％的氧，以及通过在被处理物的表面氧化等离子体而形成氧化硅膜的工序。