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11.发明授权반도체 활성층 제조 방법, 그를 이용한 박막 트랜지스터의제조 방법 및 반도체 활성층을 구비하는 박막 트랜지스터 有权半导体有源层的制造方法，使用其的薄膜晶体管的制造方法以及具有半导体活性层的薄膜晶体管
公开(公告)号：KR100889688B1
公开(公告)日：2009-03-19
申请号：KR1020070071150
申请日：2007-07-16
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786
CPC classification number: C23C14/086 , C23C14/3464 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631
Abstract: 본 발명은 산화물 반도체로 이루어진 활성층 제조 방법 및 그를 이용한 박막 트랜지스터의 제조 방법에 관한 것으로, InGaZnO로 이루어진 제 1 타겟으로부터 In, Ga 및 Zn을 포함하는 이온이 증착되어 기판 상에 IGZO층이 형성되도록 하고, InZnO로 이루어진 제 2 타겟으로부터 In을 포함하는 이온이 증착되도록 하여 In의 조성비가 증가되도록 한다. In의 조성비가 종래보다 증가된 산화물 반도체를 활성층으로 이용함으로써 박막 트랜지스터의 이동도 및 슬롭 팩터를 포함하는 전기적 특성이 향상될 수 있다.
산화물 반도체, IGZO, 타겟, 조성비, 이동도-
12.发明公开반도체 활성층 제조 방법, 그를 이용한 박막 트랜지스터의제조 방법 및 반도체 활성층을 구비하는 박막 트랜지스터 有权制造半导体活性层的方法，使用其制造薄膜晶体管的方法和具有半导体活性层的薄膜晶体管
公开(公告)号：KR1020090007921A
公开(公告)日：2009-01-21
申请号：KR1020070071150
申请日：2007-07-16
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786
CPC classification number: C23C14/086 , C23C14/3464 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/7869
Abstract: A semiconductor active layer manufacturing method, a thin film transistor manufacturing method using the same, and a thin film transistor including a semiconductor active layer are provided to use an oxide semiconductor, in which a composition ratio of In is increased, as an active layer, thereby improving electric characteristics including slope factor and mobility of the thin film transistor. A gate electrode is formed on a substrate. A gate insulating layer is formed on the gate electrode. An IGZO layer is formed on the gate insulating layer. The IGZO layer is an active layer providing source and drain regions and a channel region. Source and drain electrodes are formed in order to be contacted with the source and drain regions. At this time, the IGZO layer is formed by depositing ions including Ga and Zn from a first target(22). Ions including In are deposited from a second target(24). A composition ratio of the In of the IGZO layer is about 45 to 80%. The first target is made of InGaZnO. The second target is made of InZnO. First and second bias powers(23,25) are applied to the first target and the second target. The composition ratio of the In is controlled by the size of the second bias power.
Abstract translation: 提供半导体有源层制造方法，使用该半导体活性层的薄膜晶体管制造方法和包括半导体有源层的薄膜晶体管，以使用其中In的组成比增加的氧化物半导体作为有源层， 从而改善包括薄膜晶体管的斜率和迁移率的电特性。 在基板上形成栅电极。 在栅电极上形成栅极绝缘层。 在栅极绝缘层上形成IGZO层。 IGZO层是提供源极和漏极区域以及沟道区域的有源层。 形成源极和漏极以便与源极和漏极区域接触。 此时，通过从第一靶（22）沉积包括Ga和Zn的离子形成IGZO层。 包括In的离子由第二个目标（24）存放。 IGZO层的In的组成比为约45〜80％。 第一个目标是由InGaZnO制成。 第二个目标是由InZnO组成。 第一和第二偏置功率（23,25）被施加到第一目标和第二目标。 In的组成比由第二偏置功率的大小控制。
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公开(公告)号：KR1020070024171A
公开(公告)日：2007-03-02
申请号：KR1020050078828
申请日：2005-08-26
Applicant: 삼성모바일디스플레이주식회사
IPC: H05B33/26
CPC classification number: H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L51/5012 , H01L2924/12044
Abstract: A flat panel display device is provided to improve image quality by increasing capacitance of a capacitor by reducing a distance between electrodes in the capacitor. A flat panel display device includes a substrate(10), a source electrode(21), a drain electrode(23), and a first capacitor electrode(31). The source and drain electrodes are arranged on the substrate. The first capacitor electrode is arranged on the same layer as the source and drain electrodes. The first capacitor electrode is formed to be thicker than the source and drain electrodes. A gate electrode(25) is arranged on the source and drain electrodes. A second capacitor electrode(32) is arranged on the same layer as the gate electrode.
Abstract translation: 提供一种平板显示装置，通过减小电容器中的电极之间的距离来增加电容器的电容来提高图像质量。 平板显示装置包括基板（10），源电极（21），漏电极（23）和第一电容电极（31）。 源极和漏极布置在衬底上。 第一电容器电极布置在与源电极和漏电极相同的层上。 第一电容器电极形成为比源极和漏极更厚。 栅极（25）布置在源极和漏极上。 第二电容器电极（32）设置在与栅电极相同的层上。
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公开(公告)号：KR1020100064621A
公开(公告)日：2010-06-15
申请号：KR1020080123141
申请日：2008-12-05
Applicant: 삼성모바일디스플레이주식회사
CPC classification number: G09G3/3233 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2320/043 , H01L21/02576 , H01L29/742
Abstract: PURPOSE: An organic light emitting display device and a driving method thereof are provided to display an image of uniform luminance by determining the amount of current flowing in an organic light-emitting diode regardless of the threshold voltage of a transistor. CONSTITUTION: A scan driving part supplies a scanning signal to scanning lines. A data driver supplies A reference power supply to data lines during a first period. The data driver supplies a data signal to a data lines during a second period. A pixel(140) is located at the intersection of the data lines and scanning lines. A cathode electrode of the organic light-emitting DIODE(OLED) is connected to a second power supply source 1-4 transistor(M1,M4) are connected between the first power supply source and the anode electrode of the organic light-emitting diode. The second transistor(M2) is connected between the data lines and the gate electrode of the first transistor. A third transistor(M3) is connected between a common node and the data line.
Abstract translation: 目的：提供一种有机发光显示装置及其驱动方法，用于通过确定有机发光二极管中流动的电流量来显示均匀亮度的图像，而与晶体管的阈值电压无关。 构成：扫描驱动部件将扫描信号提供给扫描线。 数据驱动器在第一个周期内为数据线提供参考电源。 数据驱动器在第二时段期间向数据线提供数据信号。 像素（140）位于数据线和扫描线的交点处。 有机发光二极管（OLED）的阴极连接到第二电源1-4，晶体管（M1，M4）连接在第一电源和有机发光二极管的阳极之间。 第二晶体管（M2）连接在数据线和第一晶体管的栅电极之间。 第三晶体管（M3）连接在公共节点和数据线之间。
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公开(公告)号：KR1020090120093A
公开(公告)日：2009-11-24
申请号：KR1020080045969
申请日：2008-05-19
Applicant: 삼성모바일디스플레이주식회사
CPC classification number: H01L27/3265 , H01L27/1225 , H01L27/3262 , H01L27/3276 , H01L29/7869 , H01L2251/5323 , H01L31/022483 , H01L51/0082 , H01L51/442 , H01L2924/01049 , H01L2924/13069
Abstract: PURPOSE: An organic electroluminescent display device is provided to perform a transparent display device by forming a top electrode and a bottom electrode of a capacitor included in each pixel through a transparent conductive material. CONSTITUTION: An organic electroluminescent display device includes a pixel part and a non-pixel part. In the pixel part, a plurality of scanning lines, a data line, and a pixel power line are arranged into a matrix shape. The non-pixel part is formed in an intersection region of the scanning lines, the data line, and the pixel power line. A pad part, a scanning driving part, a data driving part, and a power supply line are formed in the non-pixel part. The pad part receives a signal for driving each non-pixel(104).
Abstract translation: 目的：提供一种有机电致发光显示装置，通过透明导电材料形成每个像素中包含的电容器的顶电极和底电极来执行透明显示装置。 构成：有机电致发光显示装置包括像素部分和非像素部分。 在像素部分中，将多条扫描线，数据线和像素电力线布置成矩阵形状。 非像素部分形成在扫描线，数据线和像素电力线的交叉区域中。 在非像素部分中形成焊盘部分，扫描驱动部分，数据驱动部分和电源线。 焊盘部分接收用于驱动每个非像素（104）的信号。
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Patent Agency Ranking
公开(公告)号：KR1020090076581A
公开(公告)日：2009-07-13
申请号：KR1020080002610
申请日：2008-01-09
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786 , G02F1/136
CPC classification number: H01L29/7869 , H01L27/3262 , H01L29/78618
Abstract: A thin film transistor, a manufacturing method thereof, and a flat panel display including the thin film transistor are provided, which can improve ohmic contact property of the drain electrode and the P-type oxide semiconductor layer. The P-type oxide semiconductor layer(13) is formed on the substrate(10). The P-type oxide semiconductor layer comprises the channel region, source area and drain domain, and the ohmic contact domain of the drain area surface part and source area. The gate electrode is overlapped with the P-type oxide semiconductor layer of the channel region. The gate electrode is insulated with the P-type oxide semiconductor layer by the gate insulating layer. The source electrode(15a) and drain electrode(15b) come in contact with source area and drain region through the ohmic contact domain.
Abstract translation: 提供薄膜晶体管，其制造方法和包括薄膜晶体管的平板显示器，其可以改善漏电极和P型氧化物半导体层的欧姆接触特性。 P型氧化物半导体层（13）形成在基板（10）上。 P型氧化物半导体层包括沟道区域，源极区域和漏极区域以及漏极区域表面部分和源极区域的欧姆接触区域。 栅电极与沟道区的P型氧化物半导体层重叠。 栅电极通过栅极绝缘层与P型氧化物半导体层绝缘。 源极（15a）和漏电极（15b）通过欧姆接触区域与源极区域和漏极区域接触。
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公开(公告)号：KR1020080104756A
公开(公告)日：2008-12-03
申请号：KR1020070051994
申请日：2007-05-29
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786
CPC classification number: H01L29/78606 , G02F1/1368 , G02F2201/501 , G02F2202/10 , H01L27/12 , H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L29/78618 , H01L29/78636
Abstract: The flat panel display including the thin film transistor and the manufacturing method thereof and thin film transistor are provided to improve the electrical characteristic of device by the reducing a leakage current at the non-resistance decrease of source and drain region and channel region. The thin film transistor comprises the insulating substrate(10), the gate electrode(12), the semiconductor layer(14), the diffusion barrier(15), the second insulating layer, source and drain electrode(17a and 17b). The gate electrode is formed on the insulating substrate. The semiconductor layer is insulated with the gate electrode with the first insulating layer. The semiconductor layer provides the channel region, source and drain region. The diffusion barrier is formed on the semiconductor layer of the channel region. The second insulating layer contains the hydrogen ion(16a). The contact hole is formed so that the second insulating layer source and drain region are exposed. The source and drain electrode are contacted with source and drain region through the contact hole.
Abstract translation: 提供包括薄膜晶体管的平板显示器及其制造方法和薄膜晶体管，以通过在源极和漏极区域以及沟道区域的非电阻减小处减少漏电流来改善器件的电气特性。 薄膜晶体管包括绝缘基板（10），栅极电极（12），半导体层（14），扩散阻挡层（15），第二绝缘层，源极和漏极电极（17a和17b）。 栅电极形成在绝缘基板上。 半导体层与具有第一绝缘层的栅电极绝缘。 半导体层提供沟道区，源极和漏极区。 扩散阻挡层形成在沟道区的半导体层上。 第二绝缘层含有氢离子（16a）。 接触孔形成为使得第二绝缘层源极和漏极区域露出。 源极和漏极通过接触孔与源极和漏极区域接触。
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公开(公告)号：KR101137382B1
公开(公告)日：2012-04-20
申请号：KR1020050078828
申请日：2005-08-26
Applicant: 삼성모바일디스플레이주식회사
IPC: H05B33/26
Abstract: 본 발명은 유기 절연막을 이용하면서도 커패시터의 커패시턴스가 높은 평판 디스플레이 장치를 위하여, 기판과, 상기 기판 상에 배치된 소스 전극 및 드레인 전극과, 상기 소스 전극 및 상기 드레인 전극과 동일 층 상에 배치되며 상기 소스 전극 및 상기 드레인 전극보다 더 두껍게 형성된 제 1 커패시터 전극을 구비하는 것을 특징으로 하는 평판 디스플레이 장치를 제공한다.
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公开(公告)号：KR100962989B1
公开(公告)日：2010-06-10
申请号：KR1020080002610
申请日：2008-01-09
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786 , G02F1/136
Abstract: 본 발명은 산화물 반도체를 활성층으로 하는 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 평판 표시 장치에 관한 것으로, 기판 상에 형성되며 채널 영역, 소스 영역 및 드레인 영역과, 소스 영역 및 드레인 영역 표면부의 저항성 접촉영역을 포함하는 P형 산화물 반도체층, 채널 영역의 P형 산화물 반도체층과 중첩되며 게이트 절연막에 의해 P형 산화물 반도체층과 절연되는 게이트 전극 및 저항성 접촉영역을 통해 소스 영역 및 드레인 영역과 접촉되는 소스 및 드레인 전극을 포함하며, 저항성 접촉영역에 소스 및 드레인 전극보다 높고 P형 산화물 반도체보다 낮은 일함수를 갖는 금속 이온이 주입된다.
산화물 반도체, 산화아연, 일함수, 금속 이온, 저항성 접촉-
公开(公告)号：KR1020100015100A
公开(公告)日：2010-02-12
申请号：KR1020080076010
申请日：2008-08-04
Applicant: 삼성모바일디스플레이주식회사
IPC: G02F1/136
CPC classification number: H01L29/78696 , H01L27/1225 , H01L29/7869
Abstract: PURPOSE: A thin film transistor, a method of manufacturing the thin film transistor and a flat panel display device with the thin film transistor are provided to maintain a certain level of carrier concentration capable of maintaining a semiconductor characteristic. CONSTITUTION: An oxide semiconductor layer(18) is formed on a substrate(10). The oxide semiconductor layer includes a channel domain, a source domain and a drain domain. A gate electrode(14) is insulated with the oxide semiconductor layer by a gate insulating layer(16). A source electrode(20a)/a drain electrode(20b) is connected to the source/drain domain. The oxide semiconductor layer is made of the first thickness and the second thickness. The first thickness has the first carrier concentration. The second thickness has the second carrier concentration lower than the first carrier concentration.
Abstract translation: 目的：提供薄膜晶体管，制造薄膜晶体管的方法和具有薄膜晶体管的平板显示装置，以保持能够保持半导体特性的一定水平的载流子浓度。 构成：在基板（10）上形成氧化物半导体层（18）。 氧化物半导体层包括沟道域，源极畴和漏极区。 栅电极（14）通过栅极绝缘层（16）与氧化物半导体层绝缘。 源电极（20a）/漏电极（20b）连接到源/漏域。 氧化物半导体层由第一厚度和第二厚度制成。 第一厚度具有第一载流子浓度。 第二厚度的第二载流子浓度低于第一载流子浓度。
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