Abstract:
A phase-change memory unit and a manufacturing method thereof and a phase change memory device including this and a manufacturing method thereof are provide to authorize current from a conductive construct to a first electrode or a bottom electrode and as a conductive construct and/or an ohmic layer pattern are contacted with the side or bottom surface of the first electrode or the bottom electrode. A phase-change memory unit comprises an isolation structure(210), a conductive construct(225), a first electrode(250), a phase change material layer pattern(275), a second electrode(280). The isolation structure is formed on a substrate(200). The isolation structure has an opening(215) exposing substrate. The conductive construct is formed within the opening. The first electrode has a side wall and a bottom surface contacted with the conductive construct. The phase change material layer pattern is formed on the first electrode and isolation structure. The second electrode is formed on the phase change material layer pattern.
Abstract:
A method for forming a phase change material layer is provided to form a phase change material layer having a contact of tellur less than 50 percent by using a characteristic that the tellur included in a chalcogen compound becomes volatile at a specific temperature. A sputtering process is performed on a chalcogen target containing antimony and tellur to separate the constitution particles of the target from the target. The particles separated from the target are deposited on a substrate at a volatile temperature of tellur lower than the volatile temperature of antimony to form a phase change material layer including a chalcogen compound having a tellur content of 5-50 percent(S140). The temperature can range from 250 to 350 ‹C. The target can include at least one impurity selected from a group of oxygen, silicon and carbon.
Abstract:
PURPOSE: A method and a device for displaying a receiving telephone number of a portable terminal are provided to display subscriber information corresponding to a telephone number similar to a received telephone number. CONSTITUTION: A portable terminal receives a call(S300). It is determined whether a telephone number of the received call is stored in a phonebook of the portable terminal(S305). If the telephone number of the received call is not stored in the phonebook, a telephone number including a number string the same as a telephone number of the received call(S315). Subscriber information of the searched telephone number is displayed on a display unit of the portable terminal(S325). The telephone number of the received call is saved in a storage unit(S335).
Abstract:
저항체를 이용한 비휘발성 메모리 장치의 제조 방법 및 비휘발성 메모리 장치가 제공된다. 상기 비휘발성 메모리 장치의 제조 방법은 기판 상에 반도체 패턴을 형성하고, 반도체 패턴 상에 금속층을 형성하고, 기판을 열처리하여 반도체 패턴과 금속층을 반응시켜, 적어도 2개의 상이 혼재하는 혼합상(mixed phase) 금속 실리사이드층을 형성하고, 혼합상 금속 실리사이드층이 형성된 기판을 식각 가스에 노출시키는 것을 포함한다. 비휘발성 메모리 장치, 오믹층, 수직 셀 다이오드, 식각 가스, 손상, 열처리