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公开(公告)号：KR1020170114832A
公开(公告)日：2017-10-16
申请号：KR1020160042411
申请日：2016-04-06
Applicant: 삼성전자주식회사
IPC: H01L25/065 , H01L23/31 , H01L23/00 , H01L23/498
CPC classification number: H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L25/162 , H01L27/0802 , H01L27/0805 , H01L2224/16225 , H01L2224/48091 , H01L2225/0651 , H01L2225/06541 , H01L2225/06562 , H01L2924/19103 , H01L2924/19104 , H01L2924/00014
Abstract: 본발명의기술적사상은반도체모듈의사이즈를감소시킬수 있는수동소자패키지, 및그 수동소자패키지를포함한반도체모듈을제공한다. 그수동소자패키지는제1 기판; 상기제1 기판상에배치된복수의제1 수동소자들; 상기제1 수동소자들상에적층된제2 기판; 상기제2 기판상에배치된복수의제2 수동소자들; 및상기제1 수동소자들및 상기제2 수동소자들을밀봉하는밀봉재;를포함한다.
Abstract translation: 本发明的技术特征提供了一种半导体模块，包括无源元件封装，mitgeu无源器件封装，可以降低半导体模块的小型化。 无源器件封装包括：第一衬底; 设置在第一基板上的多个第一无源元件; 堆叠在第一无源元件上的第二衬底; 多个第二无源元件，设置在第二基板上; 以及密封第一无源元件和第二无源元件的密封材料。
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公开(公告)号：KR1020170046967A
公开(公告)日：2017-05-04
申请号：KR1020150147253
申请日：2015-10-22
Applicant: 삼성전자주식회사
IPC: F24F1/06 , F24F1/14 , F24F1/16 , F24F1/18 , F24F13/30 , F24F1/20 , F24F1/08 , F24F1/10 , F28F9/26 , B22D19/00 , B22D17/00
CPC classification number: H05K7/20354 , B23P15/26 , H05K7/20318
Abstract: 전장부품의발열부를효율적으로냉각할수 있도록개선된구조를가지는공기조화기의실외기및 이에적용되는냉각유닛의제조방법을개시한다. 공기조화기의실외기는케이스와, 냉매를압축하는압축기와, 압축기에서토출되는냉매를응축시키는응축기와, 케이스에마련되는전장부품과, 전장부품을냉각시키도록마련되는냉각유닛을포함하고, 냉각유닛은, 전장부품으로부터발생되는열을전달받아냉각하도록마련되며, 냉매가이동하는냉각파이프의적어도일부가접촉하도록마련되는방열부재및 방열부재의적어도일부에마련되는복수의열전달핀을포함한다.
Abstract translation: 本发明公开了一种空调器的室外单元，其具有用于有效地冷却电气部件的加热部分的改进结构，以及应用于其的冷却单元的制造方法。 空调的室外机包括壳体，用于压缩制冷剂的压缩机，用于冷凝从压缩机排出的制冷剂的冷凝器，设置在壳体中的电子部件以及用于冷却电子部件的冷却单元， 单元可以适于接收冷却从所述电气部件产生的热量，并且至少其中的制冷剂被至少设置冷却管的一部分的热辐射构件是在接触移动和热bujaeui包括多个传热翅片的一部分被提供。
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公开(公告)号：KR1020090067269A
公开(公告)日：2009-06-25
申请号：KR1020070134840
申请日：2007-12-21
Applicant: 삼성전자주식회사
IPC: H01L21/76
CPC classification number: H01L21/76229 , H01L21/76232
Abstract: A method for forming a trench and a manufacturing method of a semiconductor device using the same are provided to form easily trenches having different depth values by using a polymer bonding process. A plurality of first patterns(104) and a plurality of second patterns(106) are formed on a substrate(100). The first patterns are separated in a first width from each other. The second patterns are separated in a second width from each other. The second width is larger than the first width. The substrate is etched by using the first and second patterns as etch masks. A first trench having a first depth value is formed. A second trench having a second depth value is formed. A gap between the first patterns is filled with a sacrificial layer. The substrate is etched by using the sacrificial layer, the first patterns, and the second patterns as etch masks. The second trench having a third depth value is formed. The third depth value is larger than the second depth value.
Abstract translation: 提供了形成沟槽的方法和使用其的半导体器件的制造方法，以通过使用聚合物接合工艺形成具有不同深度值的容易的沟槽。 多个第一图案（104）和多个第二图案（106）形成在基板（100）上。 第一图案在第一宽度彼此分开。 第二图案在第二宽度彼此分开。 第二宽度大于第一宽度。 通过使用第一和第二图案作为蚀刻掩模蚀刻衬底。 形成具有第一深度值的第一沟槽。 形成具有第二深度值的第二沟槽。 第一图案之间的间隙填充有牺牲层。 通过使用牺牲层，第一图案和第二图案作为蚀刻掩模蚀刻衬底。 形成具有第三深度值的第二沟槽。 第三深度值大于第二深度值。
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公开(公告)号：KR100867635B1
公开(公告)日：2008-11-10
申请号：KR1020070009505
申请日：2007-01-30
Applicant: 삼성전자주식회사
IPC: H01L21/336
CPC classification number: H01L21/3083 , H01L29/4236 , H01L29/42376 , H01L29/66553 , H01L29/66621
Abstract: 완만한 곡률을 갖는 리세스 구조의 형성 방법 및 이를 이용한 반도체 장치의 제조 방법이 개시된다. 하드 마스크가 형성된 기판에 제1 예비 리세스 게이트를 형성하고, 하드 마스크를 이용하여 제1 예비 리세스의 측벽 상에 스페이서를 형성한다. 하드 마스크 및 스페이서를 이용하여 제1 예비 리세스로부터 제2 예비 리세스를 형성한 후, 스페이서를 이용하여 제1 예비 리세스로부터 확장된 하부를 갖는 리세스 구조를 형성한다. 상부와 하부 사이의 곡률이 완만한 리세스 구조물 상에 게이트 절연막과 리세스 게이트 구조물을 형성하여 개선된 특성을 갖는 반도체 장치를 제공할 수 있다.
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公开(公告)号：KR1020080071361A
公开(公告)日：2008-08-04
申请号：KR1020070009505
申请日：2007-01-30
Applicant: 삼성전자주식회사
IPC: H01L21/336
CPC classification number: H01L21/3083 , H01L29/4236 , H01L29/42376 , H01L29/66553 , H01L29/66621
Abstract: A method for forming a recess structure and a method for manufacturing a semiconductor device having a recessed gate structure are provided to improve an electrical characteristic and reliability by forming a smooth curve between an upper part and a lower part of the recess structure. A hard mask is formed on a substrate(10). A first preliminary recess is formed on a substrate by using the hard mask as an etch mask. A spacer is formed on a sidewall of the first preliminary recess. A second preliminary recess is formed from the first preliminary recess by using the spacer as an etch mask. A recess structure(40) having an extended lower part is formed from the second preliminary recess by using the spacer as an etch mask. A pad oxide layer pattern is formed between the substrate and the hard mask.
Abstract translation: 提供一种用于形成凹陷结构的方法和用于制造具有凹陷栅极结构的半导体器件的方法，以通过在凹部结构的上部和下部之间形成平滑的曲线来改善电气特性和可靠性。 在基板（10）上形成硬掩模。 通过使用硬掩模作为蚀刻掩模，在基板上形成第一预备凹槽。 间隔件形成在第一预备凹部的侧壁上。 通过使用间隔物作为蚀刻掩模，由第一预备凹部形成第二预备凹槽。 通过使用间隔件作为蚀刻掩模，由第二预备凹部形成具有延伸的下部的凹部结构（40）。 在衬底和硬掩模之间形成衬垫氧化物层图案。
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Patent Agency Ranking
公开(公告)号：KR1020070112496A
公开(公告)日：2007-11-27
申请号：KR1020060045458
申请日：2006-05-22
Applicant: 삼성전자주식회사
Abstract: A gas injector and a wafer processing apparatus having the same are provided to supply a process gas to a semiconductor wafer uniformly by spraying the process gas from side and lower surfaces of a second gas injection unit. A gas injector includes a first gas injection unit(110), plural second gas injection units(120), and plural gas lines(130). The first gas injection unit includes first holes(112) on overall side and lower surfaces and sprays process gas on a wafer. The second gas injection units are arranged to be apart from each other by a constant distance in a side direction of the first injection unit and include second holes(122) on half of the side and lower surfaces toward the first injection unit. The gas lines are connected to the first and second gas injection units, respectively and supply the process gas.
Abstract translation: 提供一种气体注入器和具有该气体注入器的晶片处理装置，以通过从第二气体注入单元的侧表面和下表面喷射处理气体来均匀地向半导体晶片提供处理气体。 气体喷射器包括第一气体注入单元（110），多个第二气体注入单元（120）和多个气体管线（130）。 第一气体注入单元包括在整个侧面和下表面上的第一孔（112），并且在晶片上喷射处理气体。 第二气体注入单元被布置成在第一注射单元的侧面方向上彼此隔开一定距离，并且包括朝向第一注射单元的一半侧面和下表面上的第二孔（122）。 气体管线分别连接到第一和第二气体注入单元并且供应处理气体。
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公开(公告)号：KR101396124B1
公开(公告)日：2014-05-19
申请号：KR1020070134840
申请日：2007-12-21
Applicant: 삼성전자주식회사
IPC: H01L21/76
CPC classification number: H01L21/76229 , H01L21/76232
Abstract: 단순한 공정으로 트렌치를 형성하는 방법 및 이를 이용한 반도체 소자의 제조 방법이 개시된다. 트렌치를 형성하는 방법에 있어서, 기판 상에 제1 폭으로 이격된 제1 패턴들과 제1 폭보다 넓은 제2 폭으로 이격된 제2 패턴들을 형성한다. 제1 및 제2 패턴들을 식각 마스크들로 이용하여 기판을 식각하여, 제1 깊이를 갖는 제1 트렌치와 제2 깊이를 갖는 예비 제2 트렌치를 형성한다. 제1 패턴들 상부 사이를 폐쇄시키는 희생막을 형성한다. 희생막, 제1 및 제2 패턴들을 식각 마스크들로 이용하여 기판을 식각하여, 제2 깊이보다 깊은 제3 깊이를 갖는 제2 트렌치를 형성한다. 제1 패턴들 상부 사이에 형성된 희생막을 식각 마스크로 사용함으로써, 보다 단순한 공정으로 트렌치를 형성할 수 있다.
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公开(公告)号：KR1020140039846A
公开(公告)日：2014-04-02
申请号：KR1020120106600
申请日：2012-09-25
Applicant: 삼성전자주식회사
IPC: H01L23/36
CPC classification number: H01L29/34 , H01L21/563 , H01L21/565 , H01L23/3128 , H01L23/34 , H01L23/3675 , H01L23/42 , H01L23/4334 , H01L23/49811 , H01L24/97 , H01L25/105 , H01L29/1033 , H01L2224/16225 , H01L2224/32225 , H01L2224/45139 , H01L2224/48095 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/97 , H01L2225/1023 , H01L2225/1058 , H01L2225/1076 , H01L2225/1094 , H01L2924/10271 , H01L2924/15174 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: Provided is a semiconductor package including a housing which includes a first package substrate; a first semiconductor chip which is arranged on the first package substrate; a heat transmission layer which is arranged on the first semiconductor chip; a heat spreader which is arranged on the heat transmission layer; a molding part which is arranged on the first package substrate and directly surrounds the lateral surfaces of the first semiconductor chip; and a guide wall which is arranged on the molding part and indirectly surrounds the peripheral part of the heat spreader.
Abstract translation: 提供一种半导体封装，包括：壳体，其包括第一封装基板; 布置在第一封装基板上的第一半导体芯片; 布置在第一半导体芯片上的传热层; 布置在传热层上的散热器; 模制部件，其布置在所述第一封装基板上并且直接围绕所述第一半导体芯片的侧表面; 以及引导壁，其设置在成型部件上并间接地包围散热器的周边部分。
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公开(公告)号：KR1020070114949A
公开(公告)日：2007-12-05
申请号：KR1020060048649
申请日：2006-05-30
Applicant: 삼성전자주식회사
IPC: H01L21/3065
CPC classification number: H01L21/67069 , H01J37/32449
Abstract: A plasma etching apparatus is provided to concentrate plasma on a center of an upper surface of a substrate by improving a structure thereof. A process chamber provides a space for performing a plasma etching process. A gas supply unit supplies a process gas to form plasma within the process chamber. A lower electrode is formed within the process chamber in order to support a substrate. An upper electrode is formed opposite to the lower electrode within the process chamber in order to apply RF power for exciting the process gas of a plasma state. A gas distribution plate(100) is formed on the upper electrode within the process chamber in order to distribute the process gas to an upper part of the substrate. The gas distribution plate includes a central gas distribution plate(110) having a circular shape and n peripheral gas distribution plates(120) having a ring shape. A bottom surface of the peripheral gas distribution plate is higher than a bottom surface of the central gas distribution plate.
Abstract translation: 提供了一种等离子体蚀刻装置，通过改进其结构将等离子体集中在基板的上表面的中心。 处理室提供进行等离子体蚀刻处理的空间。 气体供应单元提供处理气体以在处理室内形成等离子体。 在处理室内形成下电极以支撑衬底。 上部电极与处理室内的下部电极相对地形成，以便施加用于激发等离子体状态的工艺气体的RF功率。 在处理室内的上电极上形成气体分配板（100），以便将工艺气体分配到衬底的上部。 气体分配板包括具有圆形形状的中心气体分配板（110）和具有环形的n个周边气体分配板（120）。 周边配气板的底面高于中央气体分配板的底面。
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公开(公告)号：KR100729264B1
公开(公告)日：2007-06-15
申请号：KR1020060048861
申请日：2006-05-30
Applicant: 삼성전자주식회사
IPC: H01L21/3065 , H01L21/02
Abstract: A gas injector and a wafer processing apparatus having the same are provided to supply uniformly a process gas onto a wafer by controlling the amount and direction of the process gas sprayed from a second body using a position controlling process on a first body. A gas injector(100) includes a first body and a second body. The first body(110) is formed like a cylinder type structure with an upper opening. The first body includes a first hole(116) at a lower surface, a second hole(118) at a lateral and a groove(120) along the first hole. The first body is used for supplying a process gas. The second body(130) is capable of storing the first body. The second body includes a third hole(136) at a lower surface and a fourth hole(138) at a lateral. The second body is used for spraying the process gas supplied from the first body through the third or/and fourth holes according to the height of the first body.
Abstract translation: 提供了一种气体喷射器和具有该气体喷射器的晶片处理设备，以通过使用位置控制处理在第一主体上控制从第二主体喷射的处理气体的量和方向，来均匀地向晶圆上供应处理气体。 气体注射器（100）包括第一本体和第二本体。 第一主体（110）形成为具有上开口的圆柱形结构。 第一主体包括在下表面处的第一孔（116），在侧向处的第二孔（118）以及沿着第一孔的凹槽（120）。 第一个主体用于供应工艺气体。 第二主体（130）能够存储第一主体。 第二主体包括在下表面处的第三孔（136）和在侧面处的第四孔（138）。 第二主体用于根据第一主体的高度喷射从第一主体供给的工艺气体穿过第三或/和第四孔。
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