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公开(公告)号：KR1020080113962A
公开(公告)日：2008-12-31
申请号：KR1020070063042
申请日：2007-06-26
Applicant: 삼성전자주식회사
CPC classification number: H05H1/46 , H01J37/32082 , H01J37/32183
Abstract: A pulse plasma matching system capable of preventing processing defect and method thereof are provided to perform an impedance matching of plasma by shifting a phase of an impedance matching correction pulse in order to be synchronized to a high frequency power pulse. A pulse plasma matching system capable of preventing processing defect comprises a high frequency power source(114), a phase shifter, a high frequency matching box, a network analyzer, and a controller. The high frequency power source generates a high frequency power. The phase shifter shifts a phase of a predetermined impedance matching correction pulse in order to be synchronized to a high frequency power pulse. The high frequency matching box supplies RF(Radio Frequency) power pulse to a processing chamber by matching plasma impedance using the high frequency power generated from the high frequency power source. The network analyzer measures impedance about the plasma generated from the processing chamber. The controller outputs the impedance matching correction pulse to the phase shifter.
Abstract translation: 提供能够防止处理缺陷的脉冲等离子体匹配系统及其方法，以通过移动阻抗匹配校正脉冲的相位来执行等离子体的阻抗匹配，以便与高频功率脉冲同步。 能够防止处理缺陷的脉冲等离子体匹配系统包括高频电源（114），移相器，高频匹配盒，网络分析器和控制器。 高频电源产生高频功率。 移相器移位预定阻抗匹配校正脉冲的相位，以便与高频功率脉冲同步。 高频匹配盒通过使用从高频电源产生的高频功率匹配等离子体阻抗，向处理室提供RF（射频）功率脉冲。 网络分析仪测量从处理室产生的等离子体的阻抗。 控制器将阻抗匹配校正脉冲输出到移相器。
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公开(公告)号：KR101670463B1
公开(公告)日：2016-10-28
申请号：KR1020100034455
申请日：2010-04-14
Applicant: 삼성전자주식회사
IPC: H01L21/768 , H01L21/311 , H01L27/108
CPC classification number: H01L21/76816 , H01L21/31144 , H01L21/76897 , H01L27/10888 , H01L27/10894
Abstract: 반도체소자의제조방법을제공한다. 이방법은제1 영역및 제2 영역을갖는기판을준비하는것을포함한다. 상기기판의제1 영역에제1 요소(first element)를형성한다. 상기기판의제2 영역에상기제1 요소보다높은레벨에위치하는상부면을갖는제2 요소(second element)를형성한다. 상기제1 및제2 요소들을덮는절연막을형성한다. 상기절연막상에마스크를형성한다. 상기마스크에대하여사진및 식각공정을진행하여, 상기제1 영역상에서상기마스크를관통하며상기절연막을노출시키는제1 마스크개구부를형성함과아울러, 상기제2 영역상에서상기절연막을노출시키지않는예비마스크개구부를형성한다. 상기제1 영역상에서상기제1 마스크개구부에의해노출된상기절연막을식각하여예비콘택개구부를형성한다. 상기제2 영역상에서상기예비마스크개구부하부의절연막이노출되도록, 상기예비마스크개구부하부에잔존하는마스크를식각하여, 제2 마스크개구부를형성한다. 상기제1 영역상에서상기예비콘택개구부의바닥영역과상기제1 요소사이의상기절연막을식각하여, 상기제1 요소를노출시키는제1 콘택개구부를형성함과아울러, 상기제2 영역상에서상기제2 마스크개구부에의해노출된상기절연막을식각하여상기제2 요소를노출시키는제2 콘택개구부를형성한다.
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公开(公告)号：KR101658492B1
公开(公告)日：2016-09-21
申请号：KR1020100078474
申请日：2010-08-13
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L27/1021 , H01L27/10817 , H01L27/10855 , H01L27/10882 , H01L27/10894 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582 , H01L27/224 , H01L27/24 , H01L27/2409 , H01L28/91 , H01L29/66666 , H01L29/7827 , H01L29/785 , H01L45/04 , H01L45/06 , H01L45/10 , H01L45/141 , H01L45/145
Abstract: 미세패턴형성방법및 이를이용한반도체소자의제조방법이제공된다. 미세패턴형성방법은하부막상에, 트렌치들을정의하는제 1 희생막을형성하고, 트렌치들을채우는제 2 희생막을형성하고, 제 2 희생막을패터닝하여, 상부개구부를정의하는제 2 희생패턴들을트렌치내에국소적으로형성하고, 그리고, 하부막을패터닝함으로써상부개구부아래의하부막에하부개구부를형성하는것을포함한다.
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公开(公告)号：KR1020130026266A
公开(公告)日：2013-03-13
申请号：KR1020110089771
申请日：2011-09-05
Applicant: 삼성전자주식회사
IPC: H01L21/8242 , H01L27/108
CPC classification number: H01L27/10885 , H01L27/10894 , H01L27/10897
Abstract: PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a stringer by forming an etch stop layer after a peripheral circuit gate electrode is formed in a peripheral circuit region. CONSTITUTION: A device isolation layer(102) defining an active region(104) is formed on a substrate(100). A buried gate pattern is formed on the substrate in a first direction to fill trenches across the active region and the device isolation layer. An etch stop layer(120) and a first insulation layer(122) are successively formed on the substrate. A bit line structure is formed on the first insulation layer and is extended in a second direction across the buried gate pattern. The bit line structure includes a barrier pattern(130), a metal pattern(132), and a capping pattern(134). A second insulation layer(140) covers the bit line structure.
Abstract translation: 目的：提供一种半导体器件及其制造方法，以在外围电路栅极形成在外围电路区域中之后通过形成蚀刻停止层来防止桁条。 构成：在衬底（100）上形成限定有源区（104）的器件隔离层（102）。 在第一方向上在衬底上形成掩埋栅极图案，以跨越有源区域和器件隔离层填充沟槽。 在衬底上依次形成蚀刻停止层（120）和第一绝缘层（122）。 位线结构形成在第一绝缘层上，并沿第二方向延伸穿过掩埋栅极图案。 位线结构包括阻挡图案（130），金属图案（132）和封盖图案（134）。 第二绝缘层（140）覆盖位线结构。
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公开(公告)号：KR1020090129214A
公开(公告)日：2009-12-16
申请号：KR1020080055356
申请日：2008-06-12
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A signal process device and a liquid crystal display device including the same are provided to remove a display failure of a liquid crystal display panel by preventing an excessive compensation voltage corresponding to compensation data from being applied to the liquid display panel. CONSTITUTION: A memory(110) receives image data of a current frame and outputs the image data of a previous frame which is previously stored. A lookup table outputs the reference gray value display from the liquid display panel for the previous frame by the combination of the current data and the previous data as the previous compensation data. A first data compensation unit(150) receives the current data and converts the current data to the first sub data and the second sub data with different gray values. The first data compensation unit receives the previous compensation data from the lookup table and converts the data into the third and fourth sub data with the different gray value. A second data compensation unit(170) converts the first sub data to the first compensation data using the first and third sub data. The second data compensation unit converts the second sub data to the second compensation data using the second and fourth data and outputs the second compensation data.
Abstract translation: 目的：提供一种信号处理装置和包括该信号处理装置的液晶显示装置，以通过防止与补偿数据相对应的过大补偿电压施加到液晶显示面板来消除液晶显示面板的显示故障。 构成：存储器（110）接收当前帧的图像数据，并输出先前存储的先前帧的图像数据。 查找表将当前数据和先前数据的组合作为先前的补偿数据输出来自前一帧的液体显示面板的参考灰度值显示。 第一数据补偿单元（150）接收当前数据并将当前数据转换成具有不同灰度值的第一子数据和第二子数据。 第一数据补偿单元从查找表接收先前的补偿数据，并将数据转换成具有不同灰度值的第三和第四子数据。 第二数据补偿单元（170）使用第一和第三子数据将第一子数据转换为第一补偿数据。 第二数据补偿单元使用第二和第四数据将第二子数据转换为第二补偿数据，并输出第二补偿数据。
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Patent Agency Ranking16.发明公开반도체 구조물의 형상을 예정하는 공정 파라 메타의 예측시스템, 상기 공정 파라 메타의 예측 시스템을 가지는반도체 제조 장비 및 그 장비의 사용방법 有权具有半导体结构的工艺参数预测形状的预处理系统，具有工艺参数的预制系统的半导体器件设备及其使用具有该半导体器件的器件的方法
公开(公告)号：KR1020090041137A
公开(公告)日：2009-04-28
申请号：KR1020070106687
申请日：2007-10-23
Applicant: 삼성전자주식회사
IPC: H01L21/02 , H01L21/3065
CPC classification number: H01J37/32935
Abstract: An estimation system of a process parameter of a semiconductor structure, a semiconductor manufacturing apparatus having the estimation system of a process parameter, and a method for using the same are provided to estimate a size of a shape of a semiconductor structure by using an estimation parameter generated after or while manufacturing the semiconductor. Semiconductor structures are reacted with the process gas and the plasma is sequentially produced in a processing chamber. Sensor parameters from the plasma are obtained by using a sensor. Observation parameters from the semiconductor structures detached from the process chamber are obtained by using a measuring unit(15). The selected observation parameters corresponding to the selected semiconductor structures and the process estimation model equation and a boundary condition based on the linearity of the selected sensor parameters are selected(20). One sensor parameter which is firstly manufactured among the remaining semiconductor structures is compared with the boundary condition by using the process estimation unit(25). The semiconductor structures are classified by the process sequence of the semiconductor manufacturing process. The selected semiconductor structures are previously manufactured in comparison with the remaining semiconductor structures.
Abstract translation: 提供半导体结构的工艺参数的估计系统，具有工艺参数的估计系统的半导体制造装置及其使用方法，以通过使用估计参数来估计半导体结构的形状的尺寸 在制造半导体之后或之后产生。 半导体结构与工艺气体反应，等离子体在处理室中依次生产。 通过使用传感器获得来自等离子体的传感器参数。 通过使用测量单元（15）获得从处理室分离的半导体结构的观察参数。 选择对应于所选择的半导体结构的选择的观测参数和过程估计模型方程，以及基于所选传感器参数的线性度的边界条件（20）。 首先在剩余的半导体结构中制造的一个传感器参数与边界条件通过使用处理估计单元（25）进行比较。 半导体结构通过半导体制造工艺的工艺顺序进行分类。 与剩余的半导体结构相比，预先制造所选择的半导体结构。
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公开(公告)号：KR1020140061072A
公开(公告)日：2014-05-21
申请号：KR1020120128232
申请日：2012-11-13
Applicant: 삼성전자주식회사
Inventor： 김윤재
IPC: H01L21/8242 , H01L27/108
CPC classification number: H01L27/0207 , H01L27/10885 , H01L27/10888
Abstract: A method for fabricating a semiconductor device is provided. The method for fabricating a semiconductor device includes forming a capping layer including a bit line contact hole on a substrate, forming a spacer in the inner sidewall of the bit line contact hole, forming a bit line contact in the bit line contact hole, forming a bit line layer on the substrate, exposing the spacer by etching the bit line layer, and etching the spacer.
Abstract translation: 提供一种制造半导体器件的方法。 制造半导体器件的方法包括在衬底上形成包括位线接触孔的覆盖层，在位线接触孔的内侧壁中形成间隔物，在位线接触孔中形成位线接触，形成 衬底上的位线层，通过蚀刻位线层暴露间隔物，并蚀刻间隔物。
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公开(公告)号：KR101051104B1
公开(公告)日：2011-07-22
申请号：KR1020080055356
申请日：2008-06-12
Applicant: 삼성전자주식회사
Abstract: 신호 처리 장치 및 이를 포함하는 액정표시장치가 제공된다. 이 신호 처리 장치와 이를 포함하는 액정표시장치는 이전 영상 데이터의 목표 계조값을 기준 계조값으로 보상한다. 이때, 상기 기준 계조값은 상기 이전 영상 데이터에 의해 표시패널로부터 실제로 시인되는 계조값이다. 상기 신호 처리 장치 및 상기 액정 표시 장치는 이 기준 계조값과 현재 영상 데이터의 목표 계조값을 이용하여 보상 데이터를 생성한다. 따라서, 상기 현재 영상 데이터의 목표 계조값이 과잉 보상되는 것을 방지한다.
Abstract translation: 提供了一种信号处理设备和包括该信号处理设备的液晶显示器。 该信号处理设备和包括该信号处理设备的液晶显示设备用参考色调值来补偿前一图像数据的目标色调值。 此时，参考色调值是通过先前图像数据从显示面板实际观看的色调值。 信号处理设备和液晶显示设备使用当前图像数据的基准色调值和目标色调值来生成补偿数据。 因此，防止了当前图像数据的目标色调值被过度补偿。
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公开(公告)号：KR1020080102808A
公开(公告)日：2008-11-26
申请号：KR1020070049741
申请日：2007-05-22
Applicant: 삼성전자주식회사
Abstract: A liquid crystal display and the control method is provided to minimize motion blur and flickering by driving the liquid crystal display with the impulsive type. A liquid crystal panel includes a plurality of pixels and a data driver(500) supplying a data signal to pixel. A signal control unit(700) receives the original gradation signal from outside and supplies the correction gray scale signal to data driver. A first and second correction gray scale signal is supplied to the region where the difference of the original gradation value and the correction gray scale signal at the nth frame and(n+2)th frame is lower than the predetermined value, and third correction gray scale signal is higher than the set value. The first correction gray scale signal is applied to the n-th frame and(n+1)th frame, and the second correction gray scale signal is applied to(n+2)th frame and(n+3)th frame, and the third correction gray scale signal is applied to the nth frame or(n+3)th frame so that pixel is operated in the impulsive type.
Abstract translation: 提供了一种液晶显示器和控制方法，以通过用脉冲型驱动液晶显示器来最小化运动模糊和闪烁。 液晶面板包括多个像素和向像素提供数据信号的数据驱动器（500）。 信号控制单元（700）从外部接收原始灰度信号，并将修正灰度信号提供给数据驱动器。 第一和第二校正灰度信号被提供给第n帧和第（n + 2）帧的原始灰度值和校正灰度信号的差低于预定值的区域，并且第三校正灰度 刻度信号高于设定值。 将第一校正灰度信号施加到第n帧和第（n + 1）帧，并且将第二校正灰度信号施加到第（n + 2）帧和第（n + 3）帧，以及 将第三校正灰度信号施加到第n帧或第（n + 3）帧，使得像素以脉冲型操作。
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公开(公告)号：KR1020120021722A
公开(公告)日：2012-03-09
申请号：KR1020100078474
申请日：2010-08-13
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L27/1021 , H01L27/10817 , H01L27/10855 , H01L27/10882 , H01L27/10894 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582 , H01L27/224 , H01L27/24 , H01L27/2409 , H01L28/91 , H01L29/66666 , H01L29/7827 , H01L29/785 , H01L45/04 , H01L45/06 , H01L45/10 , H01L45/141 , H01L45/145 , H01L21/0274
Abstract: PURPOSE: A method for forming a minute pattern using a mask structure and a method for manufacturing a semiconductor device using the same are provided to form minute patterns with an aspect ratio of 6 : 1 to 16 : 1 by using a mask structure made of carbon materials. CONSTITUTION: A first sacrificial layer and first mask patterns(42) are successively formed on a bottom layer. Trenches are formed in the first sacrificial layer by patterning the first sacrificial layer using the first mask patterns as an etch mask. A second sacrificial layer fills the trenches. The sacrificial layer remains in the trenches by etching a second sacrificial layer to expose the first mask patterns. Second mask patterns(72) are formed on the first mask patterns cross the trenches. Second sacrificial patterns(64) are formed in the trenches by patterning the second sacrificial layer using the second mask patterns as the etch mask.
Abstract translation: 目的：提供一种使用掩模结构形成微小图案的方法和使用该方法制造半导体器件的方法，以通过使用由碳制成的掩模结构形成纵横比为6:1至16:1的微小图案 材料。 构成：第一牺牲层和第一掩模图案（42）依次形成在底层上。 通过使用第一掩模图案作为蚀刻掩模图案化第一牺牲层，在第一牺牲层中形成沟槽。 第二牺牲层填充沟槽。 通过蚀刻第二牺牲层以暴露第一掩模图案，牺牲层保留在沟槽中。 第二掩模图案（72）形成在穿过沟槽的第一掩模图案上。 通过使用第二掩模图案作为蚀刻掩模图案化第二牺牲层，在沟槽中形成第二牺牲图案（64）。
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