公开(公告)号：KR1020070017245A

公开(公告)日：2007-02-09

申请号：KR1020050071983

申请日：2005-08-06

Applicant: 삼성전자주식회사

Inventor： 김주우 ,  이상길 ,  이병암 ,  임규홍 ,  조형석 ,  류성곤 ,  임영규 ,  안병설

IPC: H01L21/66

CPC classification number: G01N21/8851 ,  G01N21/9501 ,  G01N2021/8854 ,  H01L22/12

Abstract: 기판 결함 분류 방법은 기판 상으로 광을 조사한 후, 기판으로부터 산란 또는 반사되는 광을 검출한다. 검출광을 이용하여 각 픽셀의 좌표를 XY축으로, 각 픽셀에 따른 인텐시티 값을 Z축으로 하는 3차원 정보로 변환하고, 3차원 정보와 기 설정된 기준 신호를 비교하여 결함을 판단한다. 3차원 정보의 피크 개수, 기울기, 기울기 방향 등의 특성 파라미터를 이용하여 결함을 분류한다. 따라서 결함을 용이하게 검출 및 분류할 수 있다.

公开(公告)号：KR1020050014424A

公开(公告)日：2005-02-07

申请号：KR1020030053058

申请日：2003-07-31

Applicant: 삼성전자주식회사

Inventor： 임영규 ,  김주우 ,  임규홍 ,  이창훈

IPC: H01L21/66

Abstract: PURPOSE: A method for inspecting a substrate is provided to detect foreign substances remaining on various layers formed on a semiconductor substrate, by irradiating the second laser beam with a wavelength selected from the first laser beams with a plurality of wavelengths to the semiconductor substrate, by detecting a surface defect of the semiconductor substrate from the light scattered from the substrate and by using a laser beam with a wavelength selected from the wavelengths with strongest spectrum. CONSTITUTION: The first laser beams with mutually different wavelengths are sequentially irradiated to a semiconductor substrate(S110). The first light scattered from the surface of the substrate by the irradiation of the first laser beams and the second light scattered from the particles on the substrate are detected(S120). The intensity of the first light is compared with the intensity of the second light to calculate difference values(S130). By the irradiation of the second laser beam, the second laser beam with a wavelength corresponding to the highest difference value among the difference values is irradiated to the substrate(S210). The defect of the substrate is detected from the third light scattered from the surface of the substrate and the fourth light scattered from the particles on the substrate. The first laser beam is supplied from a laser source with a plurality of resonators. The wavelength of the first laser beam is varied by the plurality of resonators.

Abstract translation: 目的：提供一种用于检查基板的方法，用于通过用从多个波长的第一激光束向半导体基板照射具有选自第一激光束的波长的第二激光束向半导体基板照射残留在半导体基板上形成的各层上的异物，由 从从衬底散射的光以及使用具有选自最强光谱的波长的波长的激光束检测半导体衬底的表面缺陷。 构成：将相互不同波长的第一激光依次照射到半导体基板（S110）。 检测从基板的表面通过第一激光束的照射和从基板上的粒子散射的第二光散射的第一光（S120）。 将第一光的强度与第二光的强度进行比较以计算差值（S130）。 通过照射第二激光束，将对应于差值中的最高差值的波长的第二激光束照射到基板（S210）。 从从基板的表面散射的第三光和从基板上的粒子散射的第四光检测基板的缺陷。 第一激光束由具有多个谐振器的激光源提供。 第一激光束的波长由多个谐振器变化。

公开(公告)号：KR1020040048545A

公开(公告)日：2004-06-10

申请号：KR1020020076414

申请日：2002-12-03

Applicant: 삼성전자주식회사

Inventor： 김주우 ,  이병암 ,  김경호 ,  안병설

IPC: H01L21/66

Abstract: PURPOSE: A method for manufacturing a monitoring substrate of measurement equipment is provided to be capable of forming a reference sample corresponding to a variety of thin films on one semiconductor substrate for reducing the cost of the reference sample. CONSTITUTION: The first and second region are defined on a substrate(100). The second region is larger than the first region. The second and first thin film are sequentially deposited on the substrate. The first thin film pattern(140a) is formed at the first region by carrying out an etching process on the first thin film using the first etching mask pattern having the same size as the first region. The second thin film pattern(120a) is formed at the second region by carrying out an etching process on the second thin film using the second etching mask pattern having the same size as the second region.

Abstract translation: 目的：提供一种用于制造测量设备的监测基板的方法，以能够在一个半导体衬底上形成对应于各种薄膜的参考样品，以降低参考样品的成本。 构成：第一和第二区域被限定在基底（100）上。 第二区域大于第一区域。 第二和第一薄膜依次沉积在基底上。 使用具有与第一区域相同尺寸的第一蚀刻掩模图案，通过对第一薄膜进行蚀刻处理，在第一区域形成第一薄膜图案（140a）。 使用具有与第二区域相同尺寸的第二蚀刻掩模图案，通过对第二薄膜进行蚀刻处理，在第二区域形成第二薄膜图案（120a）。

公开(公告)号：KR1020040038998A

公开(公告)日：2004-05-10

申请号：KR1020020066613

申请日：2002-10-30

Applicant: 삼성전자주식회사

Inventor： 전충삼 ,  최선용 ,  김광수 ,  김주우 ,  최정현 ,  박동진

IPC: H01L21/66

CPC classification number: H01L21/67253 ,  G01N21/9503 ,  G01N21/95607 ,  G01N2021/0162 ,  G01N2021/0187 ,  G01N2021/1736 ,  G01N2021/1772 ,  G01N2021/8411 ,  G01N2021/8896 ,  G01N2021/95615 ,  G01N2201/103 ,  G01N2201/1087

Abstract: PURPOSE: A substrate inspecting apparatus is provided to be capable of carrying out many kinds of inspecting processes. CONSTITUTION: A substrate inspecting apparatus(100) is provided with the first stage(160) for supporting a substrate, the first image capture part(110) for capturing the first image of the substrate edge portion, the second stage(170) for supporting the substrate transferred from the first stage, the second image capture part(120) for capturing the second image of the substrate, and a transfer part(180) for transferring the substrate from the first stage to the second stage. The substrate inspecting apparatus further includes a data processing part(144) connected with the first and second image capture part for inspecting the results of an EBR(Edge Bead Removal) process and an EEW(Edge Exposure of Wafer) process for the substrate by using the first image of the substrate and detecting the pattern defect generated on the substrate by using the second image of the substrate.

Abstract translation: 目的：提供一种能够进行多种检查过程的基板检查装置。 构成：衬底检查装置（100）具有用于支撑衬底的第一工作台（160），用于捕获衬底边缘部分的第一图像的第一图像捕获部分（110），用于支撑衬底边缘部分的第二工作台（170） 从第一阶段转移的基板，用于捕获基板的第二图像的第二图像捕获部分（120）和用于将基板从第一阶段转移到第二阶段的转移部分（180）。 基板检查装置还包括与第一和第二图像捕获部分连接的数据处理部分（144），用于通过使用用于检查基板的EBR（边缘珠去除）处理和EEW（晶片的边缘曝光）处理的结果来检查 衬底的第一图像，并且通过使用衬底的第二图像来检测在衬底上产生的图案缺陷。