公开(公告)号：KR1020090110729A

公开(公告)日：2009-10-22

申请号：KR1020080036375

申请日：2008-04-18

Applicant: 삼성전자주식회사

Inventor： 노현필 ,  이덕형 ,  박두철

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643

Abstract: PURPOSE: A shared pixel type image sensor is provided to improve a coupling property of a transmitting device and a floating diffusion region by symmetrically arranging a local wiring in a transmitting device which shares a floating diffusion region. CONSTITUTION: A shared pixel type image sensor includes a floating diffusion region(FD), a first photoelectric conversion region(PD1), a second photoelectric conversion region(PD2), two transmitting devices(TG1,TG2), a drive device(DG), a first contact(C1), a second contact(C2), and a local wiring(L1). The floating diffusion region is formed inside the semiconductor substrate. Two transmitting devices transmit electric charge charged in the first photoelectric conversion region and the second photoelectric conversion region to the floating diffusion region. The first contact is formed on the floating diffusion region. The second contact is formed on the drive device.

Abstract translation: 目的：提供共享像素型图像传感器，通过在共享浮动扩散区域的发送装置中对称地布置局部布线来提高发送装置和浮动扩散区域的耦合特性。 构成：共享像素型图像传感器包括浮置扩散区域（FD），第一光电转换区域（PD1），第二光电转换区域（PD2），两个发送装置（TG1，TG2），驱动装置（DG） ，第一触点（C1），第二触点（C2）和局部布线（L1）。 浮动扩散区形成在半导体衬底的内部。 两个发送装置将在第一光电转换区域和第二光电转换区域中充电的电荷发送到浮动扩散区域。 第一触点形成在浮动扩散区上。 第二触点形成在驱动装置上。

公开(公告)号：KR1020080083479A

公开(公告)日：2008-09-18

申请号：KR1020070024099

申请日：2007-03-12

Applicant: 삼성전자주식회사

Inventor： 김홍기 ,  노현필 ,  정희근

IPC: H01L27/146

CPC classification number: H01L27/14698 ,  H01L27/14636 ,  H01L27/14685

Abstract: A method for manufacturing a semiconductor device is provided to enhance reliability by preventing the generation of noise of an image sensor. An interlayer dielectric(120) is formed on a substrate(100) including a gate insulating layer(105), a gate electrode, and a photodiode region(118). A mold insulating layer is formed on the interlayer dielectric in order to expose the interlayer dielectric on the photodiode region. A protective layer(185) including hydrogen atoms are formed along a profile of the mold insulating layer. An annealing process is performed to diffuse the hydrogen atoms from the protective layer to the gate insulating layer and the photodiode region.

Abstract translation: 提供一种用于制造半导体器件的方法，以通过防止图像传感器的噪声的产生来提高可靠性。 在包括栅极绝缘层（105），栅极电极和光电二极管区域（118）的基板（100）上形成层间电介质（120）。 为了露出光电二极管区域上的层间电介质，在层间电介质上形成模绝缘层。 沿着模具绝缘层的轮廓形成包括氢原子的保护层（185）。 执行退火处理以将氢原子从保护层扩散到栅极绝缘层和光电二极管区域。

公开(公告)号：KR100791011B1

公开(公告)日：2008-01-03

申请号：KR1020060120946

申请日：2006-12-01

Applicant: 삼성전자주식회사

Inventor： 노현필

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14625

Abstract: An image device including an inner lens and a method for fabricating the same are provided to increase a refractive index and to improve light transmittance by adding nitrogen. A light receiving element(110) is formed on a top surface of a substrate(100). An interlayer dielectric structure(A) is formed with a transistor(120) for driving the light receiving element, and a metal contact and a metal wiring connected electrically to the transistor. A cavity is formed by removing a top part of the light receiving element from the interlayer structure. A transparent material layer is formed to fill up the cavity. A material layer for inner lens is formed by adding nitrogen to a part higher than the interlayer dielectric structure in the transparent material layer. The inner lens is manufactured by forming the material layer for inner lens with a type of lens. A color filter is formed on the inner lens.

Abstract translation: 提供包括内透镜及其制造方法的图像装置以增加折射率并通过添加氮来提高透光率。 光接收元件（110）形成在基板（100）的顶表面上。 层间电介质结构（A）形成有用于驱动光接收元件的晶体管（120）和与晶体管电连接的金属接触和金属布线。 通过从层间结构去除光接收元件的顶部而形成空腔。 形成透明材料层以填充空腔。 通过在透明材料层中的高于层间电介质结构的部分添加氮而形成内透镜用材料层。 内透镜通过用一种透镜形成内透镜的材料层来制造。 在内透镜上形成滤色器。

公开(公告)号：KR1020060094375A

公开(公告)日：2006-08-29

申请号：KR1020050015492

申请日：2005-02-24

Applicant: 삼성전자주식회사

Inventor： 노현필

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14683 ,  H01L27/14689 ,  H01L31/03529

Abstract: 이미지 센서 및 그 제조 방법이 제공된다. 본 발명의 이미지 센서 및 그 제조 방법에 따르면, 포토 다이오드 영역에 실리콘 게르마늄 에피택시얼층과 실리콘 에피택시얼층이 적층된다. 이후 상기 포토 다이오드 영역 상에 N형 불순물을 이온 주입하여 반도체 기판 내에 N형의 불순물층을 형성하고, 상기 실리콘 게르마늄 에피택시얼층과 실리콘 에피택시얼층에 P형 불순물을 주입하여 포토 다이오드를 형성한다. 상기 실리콘 게르마늄 에피택시얼층은 밴드 갭이 낮기 때문에 전하 생성량이 증가하여 광감도가 향상된다.

Abstract translation: 提供了一种图像传感器及其制造方法。 根据本发明的图像传感器和制造方法，硅锗外延层和硅外延层堆叠在光电二极管区域中。 由于光电二极管和区域离子注入N型杂质通过形成N型的杂质层，并且在硅锗外延eolcheung作为在半导体衬底中的硅外延eolcheung注入P型杂质，以形成光电二极管。 由于硅锗外延层具有低带隙，所以电荷产生量增加并且光敏性提高。

公开(公告)号：KR101964262B1

公开(公告)日：2019-04-02

申请号：KR1020110124393

申请日：2011-11-25

Applicant: 삼성전자주식회사

Inventor： 마에다시게노부 ,  노현필 ,  이충호 ,  함석헌

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/336

公开(公告)号：KR1020130058402A

公开(公告)日：2013-06-04

申请号：KR1020110124393

申请日：2011-11-25

Applicant: 삼성전자주식회사

Inventor： 마에다시게노부 ,  노현필 ,  이충호 ,  함석헌

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/336

CPC classification number: H01L21/8236 ,  H01L21/77 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823462 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823857 ,  H01L25/00 ,  H01L27/00 ,  H01L27/0883 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L29/4232 ,  H01L2924/00

Abstract: PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce a current leakage using a high reliability gate insulating layer for high voltage. CONSTITUTION: A semiconductor substrate(100) has a high voltage region and a low voltage region. A high voltage transistor(TR-I) is formed in the high voltage region. The high voltage transistor includes a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode. A low voltage transistor(TR-II) is formed in the low voltage region. The low voltage transistor includes a second active area, a second source/drain region, a second gate insulating layer, and a second gate electrode.

Abstract translation: 目的：提供半导体器件及其制造方法，以便使用高可靠性的栅极绝缘层来降低电流泄漏。 构成：半导体衬底（100）具有高电压区域和低电压区域。 在高电压区域形成高压晶体管（TR-I）。 高压晶体管包括第一有源区，第一源极/漏极区，第一栅极绝缘层和第一栅电极。 在低压区域形成低压晶体管（TR-II）。 低压晶体管包括第二有源区，第二源极/漏极区，第二栅极绝缘层和第二栅电极。

公开(公告)号：KR1020090088635A

公开(公告)日：2009-08-20

申请号：KR1020080014038

申请日：2008-02-15

Applicant: 삼성전자주식회사

Inventor： 김홍기 ,  이덕형 ,  노현필

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14632 ,  H01L27/14636 ,  H01L27/14685

Abstract: An image sensor and a manufacturing method thereof are provided to form a pad for inputting/outputting a signal inside an insulation film structure by removing a passivation film on a sensor array region. A substrate includes a sensor array region(II) and a peripheral circuit region(I). A first insulation film structure(140) is formed on the peripheral circuit region, and includes a first multilayer line(M1a,M2a,M3a,M4a). A second insulation film structure(150) is formed on the sensor array region, and includes a second multilayer line(M1b,M2b). A top line of the first multilayer line is higher than a top line of the second multilayer line. The first insulation film structure includes an isotropic etch stop film(200). The second insulation structure does not include an isotropic etch stop film.

Abstract translation: 提供图像传感器及其制造方法，以通过去除传感器阵列区域上的钝化膜来形成用于在绝缘膜结构内输入/输出信号的焊盘。 基板包括传感器阵列区域（II）和外围电路区域（I）。 第一绝缘膜结构（140）形成在外围电路区域上，并且包括第一多层线（M1a，M2a，M3a，M4a）。 第二绝缘膜结构（150）形成在传感器阵列区域上，并且包括第二多层线（M1b，M2b）。 第一多层线的顶线高于第二多层线的顶线。 第一绝缘膜结构包括各向同性蚀刻停止膜（200）。 第二绝缘结构不包括各向同性蚀刻停止膜。

公开(公告)号：KR1020090079107A

公开(公告)日：2009-07-21

申请号：KR1020080005079

申请日：2008-01-16

Applicant: 삼성전자주식회사

Inventor： 김기범 ,  노현필

IPC: H01L21/306 ,  H01L27/146

CPC classification number: H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

Abstract: A processing method of a substrate surface, an image sensor manufacturing method using the same, and an image sensor manufactured thereby are provided to improve a low illumination characteristic of an image sensor by removing defects of a surface of a substrate. A silicon substrate preparation process is performed to prepare a silicon substrate having a surface defect(S510). A chemical solution supply process is performed to supply a chemical solution for processing a surface of the silicon substrate(S520). A chemical oxide layer manufacturing process is performed to consume the surface of the silicon substrate and to manufacture a chemical oxide layer on the silicon substrate(S530). A surface defect removal process is performed to remove defects from the surface of the silicon substrate.

Abstract translation: 提供基板表面的处理方法，使用该方法的图像传感器制造方法以及由此制造的图像传感器，以通过去除基板表面的缺陷来改善图像传感器的低照度特性。 进行硅衬底制备工艺以制备具有表面缺陷的硅衬底（S510）。 进行化学溶液供给处理以提供用于处理硅衬底表面的化学溶液（S520）。 执行化学氧化物层制造工艺以消耗硅衬底的表面并在硅衬底上制造化学氧化物层（S530）。 进行表面缺陷去除处理以从硅衬底的表面去除缺陷。

公开(公告)号：KR1020090079105A

公开(公告)日：2009-07-21

申请号：KR1020080005077

申请日：2008-01-16

Applicant: 삼성전자주식회사

Inventor： 노현필 ,  이윤기

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L21/76237 ,  H01L27/14689

Abstract: An image sensor and a manufacturing method thereof are provided to control flicker noise in a source follower transistor by suppressing noise due to a channel at an interface between an isolation layer and an active region, particularly at a corner part of the isolation layer. An image sensor includes an isolation layer(108) and a channel-forming prevention region(107). The isolation layer is formed in the inside of the semiconductor substrate(101). The isolation layer is formed to define the active region. The channel-forming prevention region is formed with one conductive type impurity at an upper part of the interface between the active region and the isolation layer. The channel-forming prevention region is formed to prevent migration of charges. The channel-forming prevention region is formed with a P-type impurity.

Abstract translation: 提供了一种图像传感器及其制造方法，以通过抑制由隔离层和有源区域之间的界面处的通道，特别是隔离层的拐角部分处的信道而产生的噪声来控制源极跟随器晶体管中的闪烁噪声。 图像传感器包括隔离层（108）和通道形成防止区域（107）。 隔离层形成在半导体衬底（101）的内部。 形成隔离层以限定有源区。 通道形成防止区域在有源区域和隔离层之间的界面的上部形成有一个导电类型的杂质。 形成通道形成防止区域以防止电荷迁移。 通道形成防止区域由P型杂质形成。

公开(公告)号：KR1020070019452A

公开(公告)日：2007-02-15

申请号：KR1020050074445

申请日：2005-08-12

Applicant: 삼성전자주식회사

Inventor： 노현필

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1463

Abstract: 이미지 센서 및 그 제조 방법이 제공된다. 비도핑된 절연 물질로 형성된 소자 분리막에 의해 활성 영역이 정의된 반도체 기판, 활성 영역 내에 형성된 광전 변환부 및 전하 검출부, 광전 변환부와 전하 검출부 사이의 활성 영역 상에 형성되어 광전 변환부에 축적된 전하를 전하 검출부로 전송하는 전하 전송부 및 광전 변환부와 소자 분리막의 경계에 일도전형의 불순물로 형성되어 암전류를 방지하는 전하 이동 방지 영역을 포함한다.
소자 분리막, 전하 이동 방지 영역, 암전류