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公开(公告)号：KR1020160034112A
公开(公告)日：2016-03-29
申请号：KR1020140125232
申请日：2014-09-19
Applicant: 삼성전자주식회사
IPC: H01L21/66 , H01L21/677
CPC classification number: G01R31/307 , G01R31/2831 , H01L22/12 , H01L22/14
Abstract: 웨이퍼스토커상에반도체웨이퍼를적재하고, 이송모듈을이용하여상기반도체웨이퍼를상압의레이저어닐모듈의내부로이송하고, 레이저광선을이용하여상기반도체웨이퍼의일부영역들을국부적으로어닐하고, 상기이송모듈을이용하여상기어닐된반도체웨이퍼를진공의전자빔주사모듈의내부로이송하고, 상기반도체웨이퍼의어닐된영역내에전자빔을주사하고, 및상기전자빔이주사된영역으로부터방출되는 2차전자들을포집하는것을포함하는반도체소자의저항성결함검사방법이설명된다.
Abstract translation: 描述了一种用于检查半导体器件的电阻缺陷的方法。 该方法包括以下步骤：将半导体晶片装载在晶片储片器上; 通过使用转移模块将半导体晶片转移到大气压的激光退火模块; 通过使用激光束对半导体晶片的一些部分进行局部退火; 通过所述转印模块将所述退火的半导体晶片转换成真空状态的电子束扫描模块; 用电子束扫描半导体晶片的退火部分; 并收集从电子束扫描的部分发射的二次电子。
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公开(公告)号：KR1020160031805A
公开(公告)日：2016-03-23
申请号：KR1020140121992
申请日：2014-09-15
Applicant: 삼성전자주식회사
IPC: H04Q9/00
CPC classification number: G08C23/04 , G08C2201/71 , H04B10/1143 , H04B10/40
Abstract: 포인팅디바이스및 그의제어방법이제공된다. 본발명의일 실시예에따른포인팅디바이스제어방법은사용자입력에따라포인팅디바이스가지시하는외부장치로식별신호를발신하는단계, 식별신호가외부장치의표면에부착된반사면에의해반사되어생성된반사신호를수신하는단계, 및수신된반사신호를분석하여포인팅디바이스가지시하는외부장치를판단하는단계를포함한다.
Abstract translation: 提供是指示设备和控制它的方法。 根据本发明的一个实施例，用于控制指向装置的方法包括以下步骤：根据用户输入将识别信号发送到由指示设备定向的外部设备; 接收通过从附接到外部设备的表面的反射表面反射识别信号而产生的反射信号; 并分析反射信号以确定由指示设备所针对的外部设备。 本发明的目的是仅使用一个指示设备和附接到外部设备的表面的反射表面来区分多个外部设备。
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公开(公告)号：KR1020140028701A
公开(公告)日：2014-03-10
申请号：KR1020120095593
申请日：2012-08-30
Applicant: 삼성전자주식회사
IPC: G01R31/02
CPC classification number: G01N23/2251 , G01R31/305 , H01J37/28 , H01J2237/2806
Abstract: Provided are a method of inspecting a semiconductor device and a semiconductor inspecting apparatus used for the same. The method comprises: obtaining a reference electron-decay time of a reference pattern; performing detection operations to detect secondary electron amounts on a detection target pattern N times (N >= 2), wherein each of the detection operations comprises irradiating an electron beam to the detection target pattern, and detecting secondary electron amounts from the detection target pattern after the reference electron-decay time has elapsed from when the electron beam is blocked; and determining the detection operation for which the maximum secondary electron amount among the N number of detected secondary electron amounts is obtained. [Reference numerals] (S100) Obtain a reference electron-decay time of a reference pattern; (S200) Perform detection operations to detect secondary electron amounts on a detection target pattern N times; (S300) Determine the detection operation for which the maximum secondary electron amount among the N number of detected secondary electron amounts is obtained
Abstract translation: 提供了一种检查半导体器件的方法和用于其的半导体检查装置。 该方法包括：获得参考图案的参考电子衰减时间; 执行检测操作以检测检测目标图案上的二次电子量N次（N> = 2），其中每个检测操作包括向检测目标图案照射电子束，并且在检测目标图案之后检测来自检测目标图案的二次电子量 参考电子衰减时间从电子束被阻塞时就已经过去了; 并且确定获得N个检测到的二次电子量中的最大二次电子量的检测操作。 （附图标记）（S100）获得参考图案的参考电子衰减时间; （S200）进行检测动作，检测检测对象图案上的二次电子量N次; （S300）求出N次检测出的二次电子量的最大二次电子量的检测动作
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Patent Agency Ranking
公开(公告)号：KR1020110130257A
公开(公告)日：2011-12-05
申请号：KR1020100049813
申请日：2010-05-27
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/0274 , G03F7/2008 , H01L21/0337
Abstract: PURPOSE: A method of forming a semiconductor device using a photolithography is provided to improve throughput by forming a much finer pattern using the same mask without an additional mask and reducing a setting time. CONSTITUTION: In a method of forming a semiconductor device using a photolithography, a reflection barrier layer and a first photoresist film are formed in the top of a substrate(S10). The first photoresist film is exposed to outside(S20). The first pattern including the first opening is formed by developing the first photoresist film(S30). The first pattern is plasma-processed(S40). A second photoresist film is formed in the first pattern(S50). The second photoresist film is exposed to outside(S60). A second pattern including the second opening is formed by developing the second photoresist film(S70).
Abstract translation: 目的：提供使用光刻法形成半导体器件的方法，以通过使用相同的掩模在不附加掩模的情况下形成更精细的图案来提高生产率，并减少凝固时间。 构成：在使用光刻法形成半导体器件的方法中，在衬底的顶部形成反射阻挡层和第一光致抗蚀剂膜（S10）。 第一光致抗蚀剂膜暴露于外部（S20）。 通过显影第一光致抗蚀剂膜形成包括第一开口的第一图案（S30）。 第一图案是等离子体处理的（S40）。 以第一图案形成第二光致抗蚀剂膜（S50）。 第二光致抗蚀剂膜暴露于外部（S60）。 通过显影第二光致抗蚀剂膜（S70）形成包括第二开口的第二图案。
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公开(公告)号：KR100886219B1
公开(公告)日：2009-02-27
申请号：KR1020070055456
申请日：2007-06-07
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/0337
Abstract: 자기정렬된 이중 패터닝을 채택하는 미세 패턴 형성 방법이 제공된다. 상기 미세 패턴 형성 방법은 기판을 제공하는 것을 구비한다. 상기 기판 상에 제1 마스크 패턴들을 형성한다. 상기 제1 마스크 패턴들을 갖는 기판 상에 반응막을 형성한다. 화학적 부착 공정(chemical attachment process)에 의해 상기 제1 마스트 패턴들에 인접한 상기 반응막을 반응시키어 상기 제1 마스크 패턴들의 외벽들을 따라 상기 희생막들을 형성한다. 미반응된 상기 반응막을 제거하여 상기 희생막들을 노출시킨다. 상기 제1 마스크 패턴들의 마주보는 측벽들과 인접한 상기 희생막들 사이에 제2 마스트 패턴들을 형성한다. 상기 희생막들을 제거하여 상기 제1 및 제 2 마스크 패턴들과 아울러서 이들 사이의 상기 기판을 노출시킨다. 상기 제1 및 제2 마스크 패턴들을 식각 마스크로 사용하여 상기 기판을 식각한다.
미세 패턴, 희생막, 화학적 부착 공정-
公开(公告)号：KR1020090005521A
公开(公告)日：2009-01-14
申请号：KR1020070068625
申请日：2007-07-09
Applicant: 삼성전자주식회사
Abstract: A siloxane polymer composition is provided to ensure excellent blocking property of opening, and excellent solubility to the teramethyl ammoniom hydroxide solution. A siloxane polymer composition having a structure indicated as the chemical formula 1, comprises siloxane polymer introduced with a carboxylic acid 2-7 weight% and organic solvent 93-98 weight%. In the chemical formula 1, R1, R2, R3 and R4 are independently H, OH, CH3, C2H5, C3H7, C4H9 or C5H11; R' is CH2, C2H4, C3H6, C4H8, C5H10 or C6H10; and n is a positive number satisfying the number average molecular weight of 4000-5000.
Abstract translation: 提供硅氧烷聚合物组合物以确保优异的开口封闭性，以及对三甲基氢氧化铵溶液的优异溶解性。 具有化学式1所示结构的硅氧烷聚合物组合物包含引入2-7重量％羧酸的硅氧烷聚合物和93-98重量％的有机溶剂。 在化学式1中，R 1，R 2，R 3和R 4独立地为H，OH，CH 3，C 2 H 5，C 3 H 7，C 4 H 9或C 5 H 11; R'是CH 2，C 2 H 4，C 3 H 6，C 4 H 8，C 5 H 10或C 6 H 10; n为满足数均分子量为4000〜5000的正数。
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公开(公告)号：KR1020080107557A
公开(公告)日：2008-12-11
申请号：KR1020070055456
申请日：2007-06-07
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/0337 , H01L21/02282 , H01L21/308
Abstract: A fine pattern forming method for adopting the self-aligned double patterning is provided to reduce the pitch size less than the limit resolution of the photo lithography process by forming the second mask pattern between the sacrificing layers along the exterior wall of the first mask patterns. A fine pattern forming method comprises the following processes. The substrate(100) is provided. A first mask pattern(110) is formed on the top of the substrate. A reaction film(120) is formed on the top of the substrate having the first mask patterns. A sacrificing layer(120a) is formed along the exterior walls of the first mask patterns by reacting the reaction film adjacent to first mast patterns according to the chemical attachment process. The sacrificing film is exposed by removing the reaction film which is not reacted. The second mask patterns are formed between the sacrificing layers which are adjacent to the side walls facing the first mask patterns. The first and second mask patterns are exposed by removing the sacrificing layers. The substrate is etched by using the first and second mask patterns as the etching mask.
Abstract translation: 提供了采用自对准双重图案化的精细图案形成方法，通过沿着第一掩模图案的外壁在牺牲层之间形成第二掩模图案，以减小小于光刻工艺的极限分辨率的间距尺寸。 精细图案形成方法包括以下处理。 提供基板（100）。 第一掩模图案（110）形成在基板的顶部。 在具有第一掩模图案的基板的顶部上形成反应膜（120）。 通过根据化学附着过程使与第一桅杆图案相邻的反应膜反应，沿着第一掩模图案的外壁形成牺牲层（120a）。 通过除去未反应的反应膜来暴露牺牲膜。 在与面向第一掩模图案的侧壁相邻的牺牲层之间形成第二掩模图案。 通过去除牺牲层来暴露第一和第二掩模图案。 通过使用第一和第二掩模图案作为蚀刻掩模蚀刻衬底。
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